DE69418287D1 - Festkörper-Bildaufnahmevorrichtung - Google Patents
Festkörper-BildaufnahmevorrichtungInfo
- Publication number
- DE69418287D1 DE69418287D1 DE69418287T DE69418287T DE69418287D1 DE 69418287 D1 DE69418287 D1 DE 69418287D1 DE 69418287 T DE69418287 T DE 69418287T DE 69418287 T DE69418287 T DE 69418287T DE 69418287 D1 DE69418287 D1 DE 69418287D1
- Authority
- DE
- Germany
- Prior art keywords
- imaging device
- solid state
- state imaging
- solid
- state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000003384 imaging method Methods 0.000 title 1
- 239000007787 solid Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76816—Output structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5309056A JP3020785B2 (ja) | 1993-12-09 | 1993-12-09 | 固体撮像装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69418287D1 true DE69418287D1 (de) | 1999-06-10 |
Family
ID=17988352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69418287T Expired - Lifetime DE69418287D1 (de) | 1993-12-09 | 1994-12-07 | Festkörper-Bildaufnahmevorrichtung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5572051A (de) |
EP (1) | EP0657946B1 (de) |
JP (1) | JP3020785B2 (de) |
KR (1) | KR100225834B1 (de) |
DE (1) | DE69418287D1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2878137B2 (ja) * | 1994-06-29 | 1999-04-05 | シャープ株式会社 | 増幅型光電変換素子、それを用いた増幅型固体撮像装置、及び増幅型光電変換素子の製造方法 |
JP3527094B2 (ja) * | 1998-04-03 | 2004-05-17 | Necエレクトロニクス株式会社 | アクティブ型xyアドレス方式固体撮像装置 |
JP4006111B2 (ja) * | 1998-09-28 | 2007-11-14 | キヤノン株式会社 | 固体撮像装置 |
JP3191793B2 (ja) * | 1999-01-28 | 2001-07-23 | 日本電気株式会社 | 電荷検出装置 |
JP3688980B2 (ja) * | 2000-06-28 | 2005-08-31 | 株式会社東芝 | Mos型固体撮像装置及びその製造方法 |
KR20020096336A (ko) * | 2001-06-19 | 2002-12-31 | 삼성전자 주식회사 | 씨모스형 촬상 장치 |
JP2004140258A (ja) * | 2002-10-18 | 2004-05-13 | Sanyo Electric Co Ltd | 固体撮像素子及びその製造方法 |
JP2015035450A (ja) * | 2013-08-07 | 2015-02-19 | 株式会社東芝 | 固体撮像装置および固体撮像装置の製造方法 |
US9574951B2 (en) | 2013-09-09 | 2017-02-21 | Semiconductor Components Industries, Llc | Image sensor including temperature sensor and electronic shutter function |
US9093573B2 (en) | 2013-09-09 | 2015-07-28 | Semiconductor Components Industries, Llc | Image sensor including temperature sensor and electronic shutter function |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3896485A (en) * | 1973-12-03 | 1975-07-22 | Fairchild Camera Instr Co | Charge-coupled device with overflow protection |
JP3097186B2 (ja) * | 1991-06-04 | 2000-10-10 | ソニー株式会社 | 固体撮像装置 |
JP3118889B2 (ja) * | 1991-09-03 | 2000-12-18 | ソニー株式会社 | Ccd撮像素子 |
KR0130959B1 (ko) * | 1992-06-03 | 1998-04-14 | 쓰지 하루오 | 고체촬상장치 및 그 제조방법 |
JP3271086B2 (ja) * | 1992-09-29 | 2002-04-02 | ソニー株式会社 | 固体撮像素子の駆動回路 |
-
1993
- 1993-12-09 JP JP5309056A patent/JP3020785B2/ja not_active Expired - Fee Related
-
1994
- 1994-12-03 KR KR1019940032709A patent/KR100225834B1/ko not_active IP Right Cessation
- 1994-12-07 EP EP94119326A patent/EP0657946B1/de not_active Expired - Lifetime
- 1994-12-07 DE DE69418287T patent/DE69418287D1/de not_active Expired - Lifetime
- 1994-12-07 US US08/351,013 patent/US5572051A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR950021705A (ko) | 1995-07-26 |
JPH07161955A (ja) | 1995-06-23 |
JP3020785B2 (ja) | 2000-03-15 |
KR100225834B1 (ko) | 1999-10-15 |
US5572051A (en) | 1996-11-05 |
EP0657946A1 (de) | 1995-06-14 |
EP0657946B1 (de) | 1999-05-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |