KR970011148B1 - 다공질 규소를 이용한 광 펌핑 수직공진형 표면방출 반도체 레이저 소자 - Google Patents
다공질 규소를 이용한 광 펌핑 수직공진형 표면방출 반도체 레이저 소자 Download PDFInfo
- Publication number
- KR970011148B1 KR970011148B1 KR1019930027633A KR930027633A KR970011148B1 KR 970011148 B1 KR970011148 B1 KR 970011148B1 KR 1019930027633 A KR1019930027633 A KR 1019930027633A KR 930027633 A KR930027633 A KR 930027633A KR 970011148 B1 KR970011148 B1 KR 970011148B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- dielectric
- porous silicon
- breg
- semiconductor laser
- Prior art date
Links
- 229910021426 porous silicon Inorganic materials 0.000 title claims description 17
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 239000002184 metal Substances 0.000 claims description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 6
- 238000005086 pumping Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 230000010355 oscillation Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (1)
- 상부 및 하부 거울층 사이에 발광층이 삽입되는 광 펌핑 수직공진형 표면 방출 반도체 레이저 소자에 있어서, 상기 상부 거울층으로 사용하기 위한 제1유전체의 브레그 반사판(4)과; 상기 하부 거울층으로 사용하기 위한 제2유전체의 브레그 반사판(5)과; 상기 제1유전체의 브레그 반사판(4)과 제2유전체의 브레그 반사판(5) 사이에 삽입되어 발광층으로 사용되는 다공질 규소를 사용한 이득층(1)과; 상기 이득층(1) 밑에 다공질 규소 제작에 사용한 결정질 규소기판(3)과; 상기 이득층(1) 위에 다공질 규소 표면의 요철에 의한 난반사를 막는 무난반사층(2)과; 상기 제2유전체의 브레그 반사판(5) 밑에 반사율을 증가시키기 위한 금속 거울층()과; 그리고 상기 제2유전체의 브레그 반사판(5)과 상기 금속 거울층(6) 사이에서 일어나는 각 반사파의 위상을 일치시키기 위해 삽입되는 위상 일치층(7)으로 형성된 것을 특징으로 하는 다공질 규소를 이용한 광 펌핑 수직공진형 표면 방출 반도체 레이저 소자.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930027633A KR970011148B1 (ko) | 1993-12-14 | 1993-12-14 | 다공질 규소를 이용한 광 펌핑 수직공진형 표면방출 반도체 레이저 소자 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930027633A KR970011148B1 (ko) | 1993-12-14 | 1993-12-14 | 다공질 규소를 이용한 광 펌핑 수직공진형 표면방출 반도체 레이저 소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950021905A KR950021905A (ko) | 1995-07-26 |
KR970011148B1 true KR970011148B1 (ko) | 1997-07-07 |
Family
ID=19370896
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930027633A KR970011148B1 (ko) | 1993-12-14 | 1993-12-14 | 다공질 규소를 이용한 광 펌핑 수직공진형 표면방출 반도체 레이저 소자 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970011148B1 (ko) |
-
1993
- 1993-12-14 KR KR1019930027633A patent/KR970011148B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR950021905A (ko) | 1995-07-26 |
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