KR970008677A - Manufacturing method of indium antimonide (lnSb) thin film for Hall device - Google Patents

Manufacturing method of indium antimonide (lnSb) thin film for Hall device Download PDF

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KR970008677A
KR970008677A KR1019950023551A KR19950023551A KR970008677A KR 970008677 A KR970008677 A KR 970008677A KR 1019950023551 A KR1019950023551 A KR 1019950023551A KR 19950023551 A KR19950023551 A KR 19950023551A KR 970008677 A KR970008677 A KR 970008677A
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thin film
substrate
manufacturing
layer
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KR1019950023551A
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KR0152000B1 (en
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장상권
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이형도
삼성전기 주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)

Abstract

본 발명은 홀소자에 사용되는 InSb박막의 제조방법에 관한 것으로, 홀소자용 InSb박막의 제조시 In과 Sb를 교차증발시켜 다층의 박막층을 형성시킨 후, 존멜팅 처리하므로서 InSb증착막의 특성이 우수할 뿐만 아니라 제조비용이 저렴하고공정관리가 용이한 홀소자용 InSb박막의 제조방법을 제공하고자 하는데, 그 목적이 있다.The present invention relates to a method for manufacturing an InSb thin film for use in Hall devices. In manufacturing the InSb thin film for Hall devices, In and Sb are cross-evaporated to form a multi-layered thin film layer. In addition, to provide a manufacturing method of the InSb thin film for the Hall device having a low manufacturing cost and easy process management, and its purpose is to.

상기한 목적을 달성하기 위한 본발명은 진공도가 5×10-7Torr 이하로 유지되는 챔버내의 기판홀더에 장착된 기판을 20∼200℃의 온도범위로 유지한후, 증발원상의 In및 Sb를 증발시키는 단계; 상기 챔버내의 진공도를 0.1∼7×10-6Torr 범위로 유지한후, In과 Sb를 3∼15Å/sec의 속도범위로 교차증발시켜, 기판과 접하는 최하층 및 최상층이 내부 In층의 1/2두께인 In층이고 적층된 In및 Sb의 전체층이 0.8∼1.5㎛두께 범위이고 In및 Sb의 최종 성분비가 1 : 0.95∼1.05 범위가 되도록,기판상에 In 및 Sb를 교차적층하여 증착시키는 단계;및 In및 Sb가 증착된 기판을 500∼650℃의 온도범위에서 존의폭을 5∼30mm범위로 하고 이동속도를 0.5∼10mm/sec의 범위로 하여 1∼5회 반복하여 존멜팅(Zone melting)하는 단계를 포함하여 이루어지는 홀소자용 InSb박막의 제조방법에 관한 것을 그 요지로 한다.In order to achieve the above object, the present invention maintains a substrate mounted in a substrate holder in a chamber in which a vacuum degree is maintained at 5 × 10 −7 Torr or lower, and then evaporates In and Sb on an evaporation source. Making a step; After maintaining the degree of vacuum in the chamber in the range of 0.1 to 7 x 10 -6 Torr, In and Sb were cross-evaporated at a speed range of 3 to 15 kW / sec. Depositing In and Sb on the substrate so as to have an In layer and a total layer of In and Sb stacked in a range of 0.8 to 1.5 mu m in thickness and a final component ratio of In and Sb to 1: 0.95 to 1.05; Zone melting of the substrate on which In and Sb is deposited is repeated 1 to 5 times at a temperature range of 500 to 650 ° C. with a width of 5 to 30 mm and a moving speed of 0.5 to 10 mm / sec. The present invention relates to a method of manufacturing an InSb thin film for a Hall element comprising the steps of:

Description

홀(Hall)소자용 안티몬화 인듐(InSb)박막의 제조방법Method for manufacturing anti-indium antimonide (InSb) thin film for Hall device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 방법이 적용되는 진공챔버의 개략도, 제2도는 본 발명의 방법에 의해 기판상에 In 및 Sb가 증착된 상태를 나타낸 단면도, 제3도는 본 발명의 방법에 의해 존멜팅처리된 후 기판상에 InSb 박막이 증착된 상태를 나타낸 단면도.1 is a schematic view of a vacuum chamber to which the method of the present invention is applied, and FIG. 2 is a cross-sectional view showing a state in which In and Sb are deposited on a substrate by the method of the present invention, and FIG. 3 is a zone melting process by the method of the present invention. Cross-sectional view showing a state in which an InSb thin film is deposited on a substrate after being deposited.

Claims (3)

진공도가 5×10-7Torr 이하로 유지되는 챔버내의 기판홀더에 기판을 장착하여 20∼200℃의 온도범위로 유지한 후, 증발원상의 In 및 Sb를 증발시키는 단계; 상기 챔버내의 진공도를 0.1∼7×10-6Torr 범위로 유지한후, In과 Sb를 3∼15Å/sec의 속도범위로 교차증발시켜, 기판과 접하는 최하층 및 최상층이 내부 In층의 1/2두께인 In층이고 적층된 In 및 Sb의 전체층이 0.8∼1.5㎛두께 범위이고 In 및 Sb의 최종성분비가 1:0.95∼1.05 범위가 되도록, 기판상에 In 및 Sb를 교차적층하여 증착시키는 단계; 및 In 및 Sb를 교차적층하여 증착시키는 단계; 및 In 및 Sb가 증착된 기판을 500∼650℃의 온도범위에서 존의폭을 5∼30mm범위로 하고 이동속도를 0.5∼10mm/sec의 범위로 하여 1∼5회 반복하여 존멜팅(Zone melting)하는 단계를 포함하여 이루어짐을 특징으로 하는 홀소자용 InSb박막이 제조방법.Mounting the substrate in a substrate holder in a chamber in which the vacuum degree is maintained at 5 × 10 −7 Torr or less and maintaining the temperature in a range of 20 to 200 ° C., and then evaporating In and Sb on the evaporation source; After maintaining the degree of vacuum in the chamber in the range of 0.1 to 7 x 10 -6 Torr, In and Sb were cross-evaporated at a speed range of 3 to 15 kW / sec. Depositing and depositing In and Sb on the substrate so that the entire layer of In and Sb, which is an In layer and the stacked In and Sb ranges from 0.8 to 1.5 mu m in thickness, and the final component ratio of In and Sb is in the range of 1: 0.95 to 1.05; And depositing In and Sb by laminating. Zone melting of the substrate on which In and Sb is deposited is repeated 1 to 5 times at a temperature range of 500 to 650 ° C. with a width of 5 to 30 mm and a moving speed of 0.5 to 10 mm / sec. InSb thin film manufacturing method for a hall element, characterized in that comprises a step. 제1항에 있어, 상기 In 및 Sb의 증발에너지는 1∼6KW의 전자빔이며, 기판상에 증착되는 In 및 Sb층의 전체 갯수는 3∼30개 범위이며, 각층의 두께는 In : 50∼200nm, Sb : 55∼360nm범위이고 그 두께비율은 1 : 1.1∼1.8 범위인 것을 특징으로하는 홀소자용 InSb박막의 제조방법.The evaporation energy of In and Sb is an electron beam of 1 to 6 KW, and the total number of In and Sb layers deposited on a substrate is in the range of 3 to 30, and the thickness of each layer is In: 50 to 200 nm. And Sb: in the range of 55 to 360 nm and thickness ratio in the range of 1: 1.1 to 1.8. 제1항 또는 제2항에 있어서, 기판상에 증착되는 In 및 Sb층의 전체 갯수는 7∼15개 범위이며, In과 Sb의 두께 비율은 1 : 1.2∼1.4인 것을 특징으로 하는 홀소자용 InSb박막의 제조방법.The InSb for Hall device according to claim 1 or 2, wherein the total number of In and Sb layers deposited on the substrate is in the range of 7 to 15, and the thickness ratio of In and Sb is 1: 1.2 to 1.4. Method for producing a thin film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950023551A 1995-07-31 1995-07-31 Method for manufacturing in-sb thin film for hall generator KR0152000B1 (en)

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KR1019950023551A KR0152000B1 (en) 1995-07-31 1995-07-31 Method for manufacturing in-sb thin film for hall generator

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KR0152000B1 KR0152000B1 (en) 1998-10-01

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