KR930014940A - Multilayer Thin Film Hall Device and Manufacturing Method Thereof - Google Patents

Multilayer Thin Film Hall Device and Manufacturing Method Thereof Download PDF

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Publication number
KR930014940A
KR930014940A KR1019910022104A KR910022104A KR930014940A KR 930014940 A KR930014940 A KR 930014940A KR 1019910022104 A KR1019910022104 A KR 1019910022104A KR 910022104 A KR910022104 A KR 910022104A KR 930014940 A KR930014940 A KR 930014940A
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South Korea
Prior art keywords
film
thin film
indium
manufacturing
antimony
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KR1019910022104A
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Korean (ko)
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KR950005968B1 (en
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이승기
윤종만
한민구
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이승기
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Priority to KR1019910022104A priority Critical patent/KR950005968B1/en
Publication of KR930014940A publication Critical patent/KR930014940A/en
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Publication of KR950005968B1 publication Critical patent/KR950005968B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Hall/Mr Elements (AREA)

Abstract

본 발명은 홑소자에 있어서 인듐과 안티몬의 증기압차를 극복할 수 있는 구조 및 제조방법을 제시한다. 본 발명의 홑소자는 인듐막 사이에 안티몬막을 개재한 구조를 가지며, 이는 기판상에 제1인듐막, 안티몬막, 제2인듐막의 순서대로 증착한 후 200∼250℃의 온도조건에서 열처리를 행함으로써 얻어진다.The present invention provides a structure and a manufacturing method that can overcome the vapor pressure difference between indium and antimony in a single device. The unitary device of the present invention has a structure in which an antimony film is interposed between indium films, which is deposited on the substrate in the order of the first indium film, the antimony film, and the second indium film, and then heat-treated at a temperature of 200 to 250 ° C. It is obtained by.

Description

다층박막형 홑소자 및 그 제조방법Multilayer Thin Film Single Device and Manufacturing Method Thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명에 따른 in-sb 다층박막의 단면구조도, 제3(A)도는 본 발명의 홑소자를 구동시키는 정전류형 구동회로도,3 is a cross-sectional structure diagram of an in-sb multilayer thin film according to the present invention, and FIG. 3 (A) is a constant current driving circuit diagram for driving a single element of the present invention.

제4도는 본 발명의 제조공정도, 제4(A)도는 본 발명의 제조공정에서 열처리 조건을 보여주는 그래프, 제4(B)도는 본 발명의 제조공정에 사용되는 마스크들의 패턴도,4 is a manufacturing process diagram of the present invention, Figure 4 (A) is a graph showing the heat treatment conditions in the manufacturing process of the present invention, Figure 4 (B) is a pattern diagram of the masks used in the manufacturing process of the present invention,

제5(A) 내지 (D)는 열처리 조건에 따른 시료의 XRD 측정도.5 (A) to (D) are XRD measurement diagrams of samples according to heat treatment conditions.

Claims (8)

홑소자에 있어서, 제1박막과 제2박막 사이에 상기 제1 및 제2박막보다 큰 증기압을 가지는 제3박막이 형성되어 있음을 특징으로 하는 홑소자.In a single element, a single element is formed between a 1st thin film and a 2nd thin film, The 3rd thin film which has a vapor pressure larger than the said 1st and 2nd thin film is formed. 제1항에 있어서, 상기 제1 및 제2박막이 인듐으로 이루어짐을 특징으로 하는 홑소자.The unitary device of claim 1, wherein the first and second thin films are made of indium. 제1항에 있어서, 상기 제3박막이 안티몬으로 이루어짐을 특징으로 하는 홑소자.The unitary device of claim 1, wherein the third thin film is made of antimony. 열증착에 의하여 박막을 형성할 수 있는 진공증착조내에서 홑소자를 제조하는 방법에 있어서, 기판상에 제1두께의 제1인듐막을 증착시키는 제1공정과, 상기 제1인듐막상에 제2두께의 안티몬막을 증착하는 제2공정과, 상기 안티몬막상에 제3두께의 제2인듐막을 증착하는 제3공정과, 상기 기판을 소정의 온도에서 열처리하는 제4공정이 연속적으로 이루어짐을 특징으로 하는 홑소자의 제조방법.A method of manufacturing a single element in a vacuum deposition tank capable of forming a thin film by thermal evaporation, comprising: a first step of depositing a first indium film of a first thickness on a substrate; and a second thickness on the first indium film A second step of depositing an antimony film, a third step of depositing a second indium film of a third thickness on the antimony film, and a fourth step of heat-treating the substrate at a predetermined temperature. Method of manufacturing the device. 제4항에 있어서, 상기 안티몬막이 상기 제1인듐막의 원료가 되는 인듐이 담긴 보우트가 충분히 냉각된 다음에 실시됨을 특징으로 하는 홑소자의 제조방법.5. The method of manufacturing a unitary device according to claim 4, wherein said antimony film is carried out after the boat containing indium which is a raw material of said first indium film is sufficiently cooled. 제4항에 있어서, 상기 제1공정이 약 2분정도 진행됨을 특징으로 하는 홑소자의 제조방법.The method of claim 4, wherein the first step is about 2 minutes. 제4항에 있어서, 상기 제1두께가 약 1000Å 정도이고, 상기 제2두께 및 제3두께가 각각 5000Å 및 4000Å 정도임을 특징으로 하는 홑소자의 제조방법.5. The method of claim 4, wherein the first thickness is about 1000 mm 3 and the second and third thicknesses are about 5000 mm and 4000 mm, respectively. 제4항에 있어서, 상기 제4공정이 200∼250℃의 온도조건에서 실시됨을 특징으로 하는 홑소자의 제조방법.The method of claim 4, wherein the fourth step is performed at a temperature of 200 to 250 ° C. 6. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910022104A 1991-12-04 1991-12-04 Multlayer thin film type hall device and manufacturing method thereof KR950005968B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910022104A KR950005968B1 (en) 1991-12-04 1991-12-04 Multlayer thin film type hall device and manufacturing method thereof

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Application Number Priority Date Filing Date Title
KR1019910022104A KR950005968B1 (en) 1991-12-04 1991-12-04 Multlayer thin film type hall device and manufacturing method thereof

Publications (2)

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KR930014940A true KR930014940A (en) 1993-07-23
KR950005968B1 KR950005968B1 (en) 1995-06-07

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KR1019910022104A KR950005968B1 (en) 1991-12-04 1991-12-04 Multlayer thin film type hall device and manufacturing method thereof

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023207131A1 (en) * 2022-04-28 2023-11-02 苏州晟成光伏设备有限公司 Efficient automatic film laying apparatus and laying method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023207131A1 (en) * 2022-04-28 2023-11-02 苏州晟成光伏设备有限公司 Efficient automatic film laying apparatus and laying method

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KR950005968B1 (en) 1995-06-07

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