KR970008453A - Thin Film Thickness Meter SRM for Semiconductor Devices - Google Patents
Thin Film Thickness Meter SRM for Semiconductor Devices Download PDFInfo
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- KR970008453A KR970008453A KR1019950023187A KR19950023187A KR970008453A KR 970008453 A KR970008453 A KR 970008453A KR 1019950023187 A KR1019950023187 A KR 1019950023187A KR 19950023187 A KR19950023187 A KR 19950023187A KR 970008453 A KR970008453 A KR 970008453A
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- film thickness
- srm
- thickness
- thin film
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
반도체장치의 박막두께 계측기 SRM을 개시한다. 더블폴리싱된(Double-Polished)웨이퍼를 사용하여 제작된 박막 두께 계측기 SRM은 고집적 반도체장치의 두께 측정의 정확도를 높일 수 있다. 본 발명에 의하면, 첫째, 더블 폴리싱된 웨이퍼로 제작하여 막두께에 대해서 계측기의 소자 스테이지에 의한 기판의 영향을 고려할 수 있다. 둘째, 동일막 두께에 대해 동일제조조건으로 제조설비, 온도, 가스, 압력등을 적용함으로서, 향후 박막제작시 동일막두께의 재현이 가능하다. 셋째, 여러 다양한 두께별로 나누어(Split thickness)제작 되어 소자의 전스텝에 대해 보증이 가능하다. 50~7000Å까지 50Å 간격으로 나누어진 두께의 SiO2SRM이 제공되었다. 넷째, 8인치 막두께 SRM 제작으로 국제적인 검증을 거쳐 향후 16M, 64M, 256MDRAM인 고집적 소자에 보증할 수 있는 표준 계측기준시료(Standard Reference)로 사용 할 수 있다.A thin film thickness meter SRM of a semiconductor device is disclosed. The thin-film thickness gauge SRM, which is manufactured using double-polished wafers, can increase the accuracy of the thickness measurement of highly integrated semiconductor devices. According to the present invention, first, the influence of the substrate by the device stage of the measuring instrument on the film thickness by fabricating a double polished wafer can be considered. Second, by applying manufacturing facilities, temperature, gas, pressure, etc. to the same manufacturing conditions for the same film thickness, it is possible to reproduce the same film thickness when manufacturing the thin film in the future. Third, the split thickness is manufactured to guarantee the whole step of the device. SiO 2 SRMs were provided with thicknesses separated by 50 ms intervals from 50 to 7000 ms. Fourth, the 8-inch film thickness SRM has been internationally verified and can be used as a standard reference standard to guarantee high integration devices of 16M, 64M, and 256MDRAM in the future.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도는 더블 폴리싱된 웨이퍼와 싱글 폴리싱된 웨이퍼의 표준 정도 벗어남의 비교 그래프이다.1 is a comparative graph of off-standard deviations of a double polished wafer and a single polished wafer.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950023187A KR970008453A (en) | 1995-07-31 | 1995-07-31 | Thin Film Thickness Meter SRM for Semiconductor Devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950023187A KR970008453A (en) | 1995-07-31 | 1995-07-31 | Thin Film Thickness Meter SRM for Semiconductor Devices |
Publications (1)
Publication Number | Publication Date |
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KR970008453A true KR970008453A (en) | 1997-02-24 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019950023187A KR970008453A (en) | 1995-07-31 | 1995-07-31 | Thin Film Thickness Meter SRM for Semiconductor Devices |
Country Status (1)
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KR (1) | KR970008453A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030001006A (en) * | 2001-06-28 | 2003-01-06 | 동부전자 주식회사 | Wafer having multi thin film |
-
1995
- 1995-07-31 KR KR1019950023187A patent/KR970008453A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030001006A (en) * | 2001-06-28 | 2003-01-06 | 동부전자 주식회사 | Wafer having multi thin film |
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