KR970003816A - Device Separator Manufacturing Method - Google Patents

Device Separator Manufacturing Method Download PDF

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Publication number
KR970003816A
KR970003816A KR1019950018906A KR19950018906A KR970003816A KR 970003816 A KR970003816 A KR 970003816A KR 1019950018906 A KR1019950018906 A KR 1019950018906A KR 19950018906 A KR19950018906 A KR 19950018906A KR 970003816 A KR970003816 A KR 970003816A
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KR
South Korea
Prior art keywords
film
ozone
usg
ozone theos
oxide film
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KR1019950018906A
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Korean (ko)
Inventor
이승무
권성구
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김주용
현대전자산업 주식회사
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Priority to KR1019950018906A priority Critical patent/KR970003816A/en
Publication of KR970003816A publication Critical patent/KR970003816A/en

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Abstract

본 발명은 반도체소자의 소자분리막 제조방법에 관한 것으로, 소자분리 마스크인 질화막 패턴을 이용하여 실리콘기판의 일정깊이가 식각된 트렌치를 형성하고, 전체적으로 오존 테오스 USG막을 증착함으로써 상기 트렌치에는 공동 발생을 억제할 수 있으며, 그 상부에 오존 테오스 BPSG막을 추가로 증착하여 평탄화를 보강할 수가 있으므로 공정 자체의 안정성을 확보할 수가 있으며, 오존 테오스 USG막과 오존 테오스 BPSG막을 상압 화학 기상 증착 장비에서 연속적으로 증착하고, 열처리 공정으로 BPSG 플로우와 USG 치밀화를 동시에 진행할 수가 있으므로 고정 수율을 향상시킬수 있다.The present invention relates to a method for manufacturing a device isolation film of a semiconductor device, by using a nitride film pattern as a device isolation mask to form a trench in which a predetermined depth of the silicon substrate is etched, by depositing ozone theos USG film as a whole to generate a cavity in the trench It is possible to restrain and to further enhance the planarization by further depositing an ozone theos BPSG film on top of it, thereby ensuring the stability of the process itself, and the ozone theos USG film and the ozone theos BPSG film in the atmospheric pressure chemical vapor deposition equipment. It is possible to improve the fixed yield because the BPSG flow and the USG densification can be performed simultaneously by successive deposition and heat treatment.

Description

소자분리막 제조방법Device Separator Manufacturing Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도 내지 제5도는 본 발명의 실시예에 의해 소자분리막을 형성하는 단계를 도시한 단면도.3 to 5 are cross-sectional views showing a step of forming an isolation layer in accordance with an embodiment of the present invention.

Claims (7)

소자분리막 제조방법에 있어서, 실리콘기판상부에 패드산화막과 제1질화막을 적층하고, 소자분리 마스크를 이용한 식각공정으로 소자분리영역의 상기 제1질화막과 패드산화막을 식각하고 노출된 실리콘기판을 일정깊이 식각하여 트렌치를 형성하는 단계와, 사일렌계 플라즈마 산화막을 상기 홈과 질화막의 상부면에 증착하는 단계와, 전체적으로 오존 테오스 USG막을 증착하여 상기 트렌치에 공동이 발생됨이 없이 채우고, 그 상부에 오존 테오스 BPSG막을 증착하는 단계와, 열처리공정으로 오존 테오스 BPSG막의 상부면에 평탄화시키는 단계와, 전면 에치백을 통하여 상기 오존 테오스 BPSG막과 오존 테오스 USG막을 질화막 상부면의 플라즈마 산화막까지 식각하는 단계와, 플라즈마 산화막, 질화막과 패드산화막을 식각하여 상기 트렌치에 오존 테오스 USG막이 채워진 소자분리산화막을 형성하는 단계를 포함하는 소자분리막 제조방법.In the method of manufacturing a device isolation film, a pad oxide film and a first nitride film are stacked on a silicon substrate, and the first nitride film and the pad oxide film in the device isolation region are etched by an etching process using an device isolation mask, and the exposed silicon substrate is formed to a predetermined depth. Etching to form a trench, depositing a silylene-based plasma oxide film on the upper surface of the groove and the nitride film, and depositing an ozone theos USG film as a whole to fill the trench without generating a cavity, and on the top thereof, ozone theo Depositing the BPSG film, planarizing the top surface of the ozone theos BPSG film by a heat treatment process, and etching the ozone theos BPSG film and the ozone theos USG film to the plasma oxide film on the top surface of the nitride film through a front etch back. And etching the plasma oxide film, the nitride film and the pad oxide film by using the ozone theos USG in the trench. Device isolation method comprising the step of forming the device isolation oxide film is filled. 제1항에 있어서, 상기 플라즈마 산화막은 500~1000Å 두께로 증착하는 것을 특징으로 하는 소자분리막 제조방법.The method of claim 1, wherein the plasma oxide film is deposited to a thickness of 500 ~ 1000Å. 제1항에 있어서, 상기 오존 테오스 USG막은 4000~8000Å으로 증착하고, 오존 테오스 BPSG막은 1000~3000으로 증착하는 것을 특징으로 하는 소자분리막 제조방법.According to claim 1, wherein the ozone theos USG film is deposited at 4000 ~ 8000Å, the ozone theos BPSG film is 1000 ~ 3000 Device isolation film manufacturing method characterized in that the deposition. 제1항에 있어서, 상기 오존 테오스 USG막과 오존 테오스 BPSG막은 동일한 상압화학 기상 증착 장비의 동일한 챔버에서 형성하는 것을 특징으로 하는 소자분리막 제조방법.The method of claim 1, wherein the ozone theos USG film and the ozone theos BPSG film are formed in the same chamber of the same atmospheric chemical vapor deposition equipment. 제1항에 있어서, 상기 열처리공정으로 오존 테오스 BPSG막의 상부면을 평탄화시킬 때 상기 오존 테오스 USG막의 막질이 치밀화되는 것을 특징으로 하는 소자분리막 제조방법.The method of claim 1, wherein the film quality of the ozone theos USG film is densified when the top surface of the ozone theos BPSG film is planarized by the heat treatment process. 제1항 또는 제5항에 있어서, 상기 열처리공정은 900~1000℃의 온도와 질소 분위기에서 30~60분 동안 실시하는 것을 특징으로 하는 소자분리막 제조방법.The method of claim 1, wherein the heat treatment is performed for 30 to 60 minutes at a temperature of 900 to 1000 ° C. and a nitrogen atmosphere. 제1항에 있어서, 상기 사일렌계 플라즈마 산화막은 SiH4-N2O계의 산화막으로 굴절율이 1.5이상인 것을 특징으로 하는 소자분리막 제조방법.The method of claim 1, wherein the xylene-based plasma oxide film is an SiH 4 -N 2 O-based oxide film, characterized in that the refractive index is 1.5 or more. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950018906A 1995-06-30 1995-06-30 Device Separator Manufacturing Method KR970003816A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100289738B1 (en) * 1998-07-07 2001-07-12 윤종용 Trench isolation method of semiconductor integrated circuit
KR100422959B1 (en) * 1997-06-28 2004-06-24 주식회사 하이닉스반도체 Method for forming isolation layer of semiconductor device
KR100458851B1 (en) * 1997-08-30 2005-04-06 주식회사 하이닉스반도체 Device Separation Method of Semiconductor Devices
KR100782789B1 (en) * 2002-12-05 2007-12-05 동부일렉트로닉스 주식회사 Method for fabricating semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100422959B1 (en) * 1997-06-28 2004-06-24 주식회사 하이닉스반도체 Method for forming isolation layer of semiconductor device
KR100458851B1 (en) * 1997-08-30 2005-04-06 주식회사 하이닉스반도체 Device Separation Method of Semiconductor Devices
KR100289738B1 (en) * 1998-07-07 2001-07-12 윤종용 Trench isolation method of semiconductor integrated circuit
KR100782789B1 (en) * 2002-12-05 2007-12-05 동부일렉트로닉스 주식회사 Method for fabricating semiconductor device

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