KR970003343B1 - Dielectric magnetic composite material - Google Patents
Dielectric magnetic composite material Download PDFInfo
- Publication number
- KR970003343B1 KR970003343B1 KR1019880015705A KR880015705A KR970003343B1 KR 970003343 B1 KR970003343 B1 KR 970003343B1 KR 1019880015705 A KR1019880015705 A KR 1019880015705A KR 880015705 A KR880015705 A KR 880015705A KR 970003343 B1 KR970003343 B1 KR 970003343B1
- Authority
- KR
- South Korea
- Prior art keywords
- composition
- temperature
- dielectric
- dielectric constant
- composite material
- Prior art date
Links
- 239000002131 composite material Substances 0.000 title 1
- 239000000203 mixture Substances 0.000 claims description 21
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 5
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 5
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000003985 ceramic capacitor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 239000011268 mixed slurry Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
내용없음.None.
Description
제1도는 본 발명의 실시예 3, 8, 12, 14, 17 조성물의 온도에 대한 유전율의 변화율을 나타낸 그래프이다.1 is a graph showing the rate of change of permittivity with respect to the temperature of the composition of Examples 3, 8, 12, 14, 17 of the present invention.
본 발명은 유전율이 크며, 유전손실이 작고 또한 유전율의 온도계수가 작으며, 넓은 온도범위에서 일정한 값을 지니는 온도보상용 유전체 자기조성물에 관한 것으로, 이 온도보상용 자기 유전체 조성물은 통신기기, 칼라 TV 등의 회로소자로서 많이 이용될수 있으며, 1100℃ 미만의 저온에서 소결이 가능하여 적층콘덴서 제조시 내부전극으로서 은-팔라듐 합금을 사용할 수가 있어 원가절감에도 기여할수 있는 세라믹 유전체 조성물이다.The present invention relates to a temperature compensation dielectric magnetic composition having a high dielectric constant, a low dielectric loss, a low temperature coefficient of dielectric constant, and having a constant value over a wide temperature range. It can be widely used as a circuit element, etc., it is possible to sinter at a low temperature of less than 1100 ℃ to use a silver-palladium alloy as an internal electrode when manufacturing a multilayer capacitor is a ceramic dielectric composition that can contribute to cost reduction.
종래의 온도보상용 유전체 자기재료의 조성물은 소성이 1270∼1400℃의 고온에서 행해 졌으며, 적층 세라믹 콘덴서 제조시 세라믹 그린시트 사이에 내부전극을 삽입하여 적층한 후 소성하는 공정이 있는데 세라믹 재료의 소성과 내부전극의 소부가 동시에 행하여지기 때문에 내부전극으로서는 1270∼1400℃의 고온에서 견딜 수 있는 백금(Pt), 금(Au), 팔라듐(Pd) 등의 귀금속을 사용해야만 했다. 따라서 적층 세라믹 콘덴서의 가격은 높아지게 되었다. 또한 최근에는 1150℃ 미만의 저온에서 소성이 가능한 온도보상용 유전체 자기조성물이 보고되었는데 (미국특허, 4,628,404), 이는 기계적 강도가 고온소결 제품의 경우 보다 훨씬 약하기 때문에 장착시 제품이 파손되는 경우가 있게 되고, 또한 이러한 저온 소결된 제품은 고주파 특성중 Q값
따라서, 본 발명은 전술한 문제점을 해결할 목적으로, BaTiO3, 10∼15wt%, TiO237∼45wt%, Nd2O328∼40wt%, Bi2O38.5∼13wt% 및 PbO 2∼5wt%로 구성된 주성분에 SiO2, ZnO, B2O3, Al2O3를 미량첨가 시켰다.Therefore, the present invention, for the purpose of solving the above problems, BaTiO 3 , 10-15wt%, TiO 2 37-45wt%, Nd 2 O 3 28-40wt%, Bi 2 O 3 8.5-13wt% and PbO 2-5wt A small amount of SiO 2 , ZnO, B 2 O 3 , and Al 2 O 3 was added to the main component consisting of%.
좀더 상세한 본 발명의 온도 보상용 유전체 자기조성물은 상기 주성분에 대해 SiO21.5∼2.5wt%, ZnO 1.5∼2.5wt%, B2O30.08∼1.3wt%, Al2O30.05∼3.0wt%가 첨가되는 것으로, 특히 Al2O3를 미량첨가 함으로써, 소결성을 향상시켜 상기 미국특허 4,628,404의 문제점을 획기적으로 개선시켰다.The more detailed temperature compensation dielectric ceramic composition of the present invention is SiO 2 1.5 to 2.5wt%, ZnO 1.5 to 2.5wt%, B 2 O 3 0.08 to 1.3wt%, Al 2 O 3 0.05 to 3.0wt% Is added, in particular by adding a small amount of Al 2 O 3 to improve the sintering properties and significantly improved the problem of the US Patent 4,628,404.
상기 조성물 성분에서 Bi2O3, PbO는 저온소결을 위해 첨가된 것이며, SiO2, ZnO 등을 유리질을 형성시켜 소결밀도를 높여주는 역할을 하게되며, B2O3는 내열충격성을 강하게 해주며 Al2O3는 소결성을 양호하게 하고, 절연저항을 높여주는 역할을 하게 된다.In the composition components, Bi 2 O 3 , PbO is added for low temperature sintering, and serves to increase the sintered density by forming glass such as SiO 2 , ZnO, B 2 O 3 to strengthen the thermal shock resistance Al 2 O 3 is to improve the sinterability and to increase the insulation resistance.
상기 본 발명의 조성물을 주성분에서, 티탄산 바륨을 10∼15wt%로 한정한 것은 10wt% 미만으로 되면 소결성이 현저하게 나빠지고 15wt% 이상이 되면 소결성이 나빠짐과 동시에 유전율의 온도특성이 좋지 않다.When the composition of the present invention is the main component, the barium titanate is limited to 10 to 15 wt%, and the sinterability is remarkably deteriorated when it is less than 10 wt%, and the sinterability is poor and the temperature characteristic of the dielectric constant is not good.
산화 네오디움을 37∼45wt%로 한정한 것은 37wt% 이하에서는 유전율이 낮고 45wt% 이상에서는 유전율의 온도특성을 만족시키지 못한다.The limit of neodymium oxide to 37 to 45 wt% is low in dielectric constant below 37 wt% and does not satisfy the temperature characteristic of dielectric constant above 45 wt%.
산화티탄을 28∼40wt%로 한 것은 28wt% 미만에서는 소결이 어려우며, 40wt%를 초과하면 유전율의 온도특성이 마이너스 측으로 큰 값을 지니게 된다. 산화비스무스를 8.5∼13wt%로 한 것은 8.5wt% 미만에서는 소결성이 좋지 않고 13wt% 이상에서는 고주파에 있어서 Q 값이 작아지기 때문이다. 산화납을 2∼5wt%로 한 것은 이 범위 외에서는 소결성이 좋지 않기 때문이다. 미량첨가 성분으로 B2O2, ZnO, SiO2를 상기 %로 각기 한정한 것은 그 wt% 미만에서는 유전율의 온도특성을 만족시키지 못하며, 그 wt% 이상에서는 유전율이 저하하기 때문이다.It is difficult to sinter titanium oxide at 28 to 40 wt%, but less than 28 wt%, and if it exceeds 40 wt%, the temperature characteristic of dielectric constant has a large value toward the negative side. The reason why bismuth oxide is 8.5 to 13 wt% is that the sinterability is poor at less than 8.5 wt% and the Q value is decreased at high frequency at 13 wt% or more. The reason for setting the lead oxide to 2 to 5 wt% is that the sinterability is not good outside this range. B 2 O 2 , ZnO, and SiO 2 are limited to the above percentages as the minor additives because the temperature characteristic of the dielectric constant is less than the wt%, and the dielectric constant decreases at the wt% or more.
산화알루미늄을 0.05∼3wt%로 한정한 것은 0.05wt% 이하에서는 소결성이 좋지 못하여, 3wt% 이상에서는 유전율이 낮아지기 때문이다.The aluminum oxide is limited to 0.05 to 3 wt% because the sinterability is not good at 0.05 wt% or less, and the dielectric constant is lowered at 3 wt% or more.
상술한 바와 같은 본 발명의 온도보상용 유전체 자기조성물에 의한 효과는 소결온도가 1100℃ 미만이므로 적층세라믹 콘덴서 제조시 상대적으로 은함유량이 많은 은-팔라듐 합금 전극을 사용할 수 있으므로 제조단가를 낮출 수 있으며, 또한, 종래의 NPO(Negative Positive Zero) 조성물보다 높은 유전 값을 지니고 있어 내부 전극의 층수를 적게 할수 있고 소형화가 가능하여 제조단가의 절감 및 가전제품의 경박 소형화를 유도할수 있다.As described above, the effect of the temperature-compensated dielectric magnetic composition of the present invention is that the sintering temperature is less than 1100 ° C., so that the silver-palladium alloy electrode having a relatively high silver content can be used in the manufacture of the multilayer ceramic capacitor, thereby lowering the manufacturing cost. In addition, since it has a higher dielectric value than the conventional NPO (Negative Positive Zero) composition, it is possible to reduce the number of layers of the internal electrode and to miniaturize, leading to a reduction in manufacturing cost and a lighter and smaller size of home appliances.
다음의 실시예에서 본 발명의 조성물의 제조방법 및 그 효과에 대하여 구체적으로 설명한다. 그러나, 다음의 실시예가 본 발명의 범위를 한정하는 것은 아니다.In the following examples, the preparation method of the composition of the present invention and the effects thereof will be described in detail. However, the following examples do not limit the scope of the present invention.
[실시예]EXAMPLE
99% 이상의 순도를 갖는 BaTiO3, TiO2, Nd2O3, Bi2O3, PbO, SiO2, ZnO, B2O3, Al2O3를 하기 표 1의 조성비율을 이루도록 평량을 한 뒤, 비닐 자(Jar)와 지르코니아(ZrO2) 볼을 이용하여 플레니터리 밀(Planetary Mill)에서 3시간동안 습식혼합하였다.BaTiO 3 , TiO 2 , Nd 2 O 3 , Bi 2 O 3 , PbO, SiO 2 , ZnO, B 2 O 3 and Al 2 O 3 having a purity of 99% or more were weighed to achieve the composition ratio of Table 1 below. Thereafter, wet mixing was performed for 3 hours in a planetary mill using vinyl jar and zirconia (ZrO 2 ) balls.
잘 혼합된 슬러리를 건조한후 920℃에서 4시간 하소하였다. 이 하소물을 볼밀로 분쇄한 뒤 유기결합체(PVA)를 첨가하여 직경12㎜, 두께1㎜로 1500㎏/㎠의 압력으로 성형하였다. 성형된 시편을 1100℃ 미만에서 2시간 소성하였다The well mixed slurry was dried and calcined at 920 ° C. for 4 hours. The calcined product was pulverized with a ball mill and then organic binder (PVA) was added to form a 12 mm diameter and 1 mm thickness at a pressure of 1500 kg / cm 2. The molded specimens were calcined at less than 1100 ° C. for 2 hours.
소성된 시편 양면에 은 전극을 발라 780℃에서 10분간 소부시켰다. 각 시편에 대해서, 측정조건을 25℃, 1MHz로 하여 유전율(εr), Q
[비교실시예]Comparative Example
본 발명의 범주에 벗어나는 조성을 가진 조성물을 본 발명에 따른 조성물과 대비할 목적으로 하기 표1의 * 로 표시한 조성대로 상기 실시예와 동일한 방법으로 제조하여 동일한 측정방법으로 그 물성을 측정하여 표1에 기재하였는바, 하기 표1에서 보는 바와 같이 소성온도가 높고 유전율이 낮으며, Q값 또한 주파수가 증가함에 따라 급격히 감소함을 알수 있었다.In order to prepare a composition having a composition outside the scope of the present invention and a composition according to the present invention in the same manner as in the above-described composition according to the composition indicated by * in Table 1 to measure the physical properties by the same measuring method in Table 1 As described in Table 1, the firing temperature is high, the dielectric constant is low, and the Q value was also found to decrease rapidly with increasing frequency.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019880015705A KR970003343B1 (en) | 1988-11-28 | 1988-11-28 | Dielectric magnetic composite material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019880015705A KR970003343B1 (en) | 1988-11-28 | 1988-11-28 | Dielectric magnetic composite material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR900008558A KR900008558A (en) | 1990-06-04 |
| KR970003343B1 true KR970003343B1 (en) | 1997-03-17 |
Family
ID=19279652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019880015705A KR970003343B1 (en) | 1988-11-28 | 1988-11-28 | Dielectric magnetic composite material |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970003343B1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220003362A (en) | 2020-07-01 | 2022-01-10 | 삼성전자주식회사 | Relaxor-ferroelectric materials and methods of synthesizing the same and device including relaxor-ferroelectric material |
-
1988
- 1988-11-28 KR KR1019880015705A patent/KR970003343B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR900008558A (en) | 1990-06-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100444230B1 (en) | Nonreducible dielectric ceramic composition | |
| EP0605904B1 (en) | Nonreducible dielectric ceramic composition | |
| JPH05152158A (en) | Ceramic capacitor | |
| EP0534378A1 (en) | Non-reducible dielectric ceramic composition | |
| US4394456A (en) | Temperature-compensating ceramic dielectrics | |
| EP0701981B1 (en) | Dielectric ceramic composition | |
| US4477581A (en) | High permittivity ceramic compositions | |
| KR970003343B1 (en) | Dielectric magnetic composite material | |
| CA1251037A (en) | Dielectric ceramic composition | |
| WO2001021548A1 (en) | Piezoelectric ceramic compositions and methods for production thereof | |
| JP3305272B2 (en) | Dielectric porcelain material | |
| JPH0557229B2 (en) | ||
| US4601988A (en) | Dielectric ceramic composition | |
| JPS6120084B2 (en) | ||
| JPH0528448B2 (en) | ||
| JP2753311B2 (en) | Dielectric ceramic composition for temperature compensation | |
| US4816429A (en) | Temperature compensating dielectric ceramic composition | |
| JP3522559B2 (en) | Dielectric porcelain material | |
| JP2788459B2 (en) | Dielectric porcelain composition | |
| KR940004142B1 (en) | Ceramic condenser | |
| KR920006729B1 (en) | Ceramic material | |
| JPH0855519A (en) | Dielectric porcelain composition | |
| KR920006730B1 (en) | Ceramic material | |
| JP2708506B2 (en) | Dielectric ceramic composition for temperature compensation | |
| JPS6111404B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19881128 |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 19931120 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 19881128 Comment text: Patent Application |
|
| G160 | Decision to publish patent application | ||
| PG1605 | Publication of application before grant of patent |
Comment text: Decision on Publication of Application Patent event code: PG16051S01I Patent event date: 19970131 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 19970526 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 19970827 Patent event code: PR07011E01D |
|
| PR1002 | Payment of registration fee |
Payment date: 19970827 End annual number: 3 Start annual number: 1 |
|
| PR1001 | Payment of annual fee |
Payment date: 19991228 Start annual number: 4 End annual number: 4 |
|
| PR1001 | Payment of annual fee |
Payment date: 20010718 Start annual number: 5 End annual number: 5 |
|
| PR1001 | Payment of annual fee |
Payment date: 20020716 Start annual number: 6 End annual number: 6 |
|
| PR1001 | Payment of annual fee |
Payment date: 20030619 Start annual number: 7 End annual number: 7 |
|
| PR1001 | Payment of annual fee |
Payment date: 20040719 Start annual number: 8 End annual number: 8 |
|
| PR1001 | Payment of annual fee |
Payment date: 20050718 Start annual number: 9 End annual number: 9 |
|
| FPAY | Annual fee payment |
Payment date: 20060718 Year of fee payment: 10 |
|
| PR1001 | Payment of annual fee |
Payment date: 20060718 Start annual number: 10 End annual number: 10 |
|
| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |