KR970003253A - High Voltage Switch Circuit of Semiconductor Memory Device - Google Patents

High Voltage Switch Circuit of Semiconductor Memory Device Download PDF

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Publication number
KR970003253A
KR970003253A KR1019950015226A KR19950015226A KR970003253A KR 970003253 A KR970003253 A KR 970003253A KR 1019950015226 A KR1019950015226 A KR 1019950015226A KR 19950015226 A KR19950015226 A KR 19950015226A KR 970003253 A KR970003253 A KR 970003253A
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KR
South Korea
Prior art keywords
high voltage
switch circuit
voltage switch
nmos transistor
gate
Prior art date
Application number
KR1019950015226A
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Korean (ko)
Other versions
KR0157343B1 (en
Inventor
염진선
임영호
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950015226A priority Critical patent/KR0157343B1/en
Publication of KR970003253A publication Critical patent/KR970003253A/en
Application granted granted Critical
Publication of KR0157343B1 publication Critical patent/KR0157343B1/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches

Abstract

1. 청구범위에 기재된 발명이 속하는 기술 분야1. TECHNICAL FIELD OF THE INVENTION

반도체 메모리에 관한 것으로 특히 고전압 스위치 회로에 관한 것이다.It relates to a semiconductor memory, and more particularly to a high voltage switch circuit.

2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention

낮은 전압에서도 동작할 수 있는 고전압 스위치 회로를 제공한다.It provides a high voltage switch circuit that can operate at low voltages.

3. 발명의 해결방법의 요지3. Summary of Solution to Invention

인가되는 입력 신호에 대응하여 출력전압을 발생하는 구동 신호 입력부와, 제어신호에 따라펌핑 동작을 하는 펌프 캐패시터를 가지며 구동신호 입력부의 출력에 따라 출력 노드를 고전압으로 상승시키는 차아지 펌프 회로와, 상기 출력 노드의 고전압이 구동신호 입력부로 역류됨을 차단하는 차단부로 이루어진 차아지 펌프 회로내에게이트 브레이크다운 발생을 막기 위해 공핍형 엔모오스 트랜지스터를 추가한 고전압 스위치 회로를 구비한다.A charge pump circuit having a drive signal input unit for generating an output voltage in response to an applied input signal, a pump capacitor for pumping according to a control signal, and for raising an output node to a high voltage according to the output of the drive signal input unit; A high voltage switch circuit including a depletion type enmo transistor is added to prevent a gate breakdown from occurring in a charge pump circuit including a blocking unit which blocks a high voltage of an output node from flowing back to a driving signal input unit.

4. 발명의 중요한 용도4. Important uses of the invention

낮은 전압에서도 동작가능한 고전압 스위치 회로에 적합하게 사용한다.It is suitable for high voltage switch circuit which can operate at low voltage.

Description

반도체 메모리 장치의 고전압 스위치 회로High Voltage Switch Circuit of Semiconductor Memory Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명에 따른 고전압 스위치 회로.3 is a high voltage switch circuit according to the present invention.

Claims (5)

반도체 메모리 장치에 있어서, 펌핑제어신호에 응답하여 펌핑동작을 하는 펌핑 캐패시터와, 상기 펌핑 캐패시터와 출력단자사이에 채널이 직렬로 접속된 제1엔모오스트랜지스터와, 상기 제1엔모오스 트랜지스터의 게이트와 드레인이 접속된 노드에 드레인이 접속되고 또한 소오스는 공핍형 엔모오스 트랜지스터의 드레인에 접속되고 또한 게이트는출력단자에 접속된 제2엔모오스 트랜지스터와, 상기 제2엔모오스 트랜지스터의 소오스에 드레인이 접속되고 소오스를 통하여 고전압을 입력받고, 게이트는 출력단자에 접속된 공핌형 엔모오스 트랜지스터를 구비함을 특징으로 하는 고전압 스위치 회로.A semiconductor memory device, comprising: a pumping capacitor performing a pumping operation in response to a pumping control signal, a first NMOS transistor having a channel connected in series between the pumping capacitor and an output terminal, a gate of the first NMOS transistor, A drain is connected to the node to which the drain is connected, the source is connected to the drain of the depletion type EnMOS transistor, and the gate is connected to the source terminal of the second NMOS transistor, and the drain is connected to the source of the second NMOS transistor. And a high voltage is input through the source, and the gate has a ball-type NMOS transistor connected to an output terminal. 제1항에 있어서, 상기 공핍형 엔모오스 트랜지스터의 게이트전압보다 소정의 높은 전압을 소오스로 인가됨을 특징으로 하는 고전압 스위치 회로.The high voltage switch circuit according to claim 1, wherein a predetermined voltage higher than a gate voltage of the depletion type EnMOS transistor is applied as a source. 제1항에 있어서, 드레쉬홀드 전압을 낮추기 위해 상기 제1 및 제2엔모오스 트랜지스터가 저전압용 게이트산화막을 가짐을 특징으로 하는 고전압 스위치 회로.2. The high voltage switch circuit of claim 1, wherein the first and second NMOS transistors have a low voltage gate oxide layer to lower a threshold voltage. 제1항에 있어서, 드레쉬홀드 전압을 낮추기 위해 상기 제1엔모오스 트랜지스터는 고전압용 게이트 산화막을 가지며, 제2엔모오스 트랜지스터는 저전압용 게이트 산화막을 가짐을 특징으로 하는 고전압 스위치 회로.2. The high voltage switch circuit of claim 1, wherein the first NMOS transistor has a high voltage gate oxide film and the second NMOS transistor has a low voltage gate oxide film to lower the threshold voltage. 제1항에 있어서, 상기 펌핑 캐패시터는 공핍형 모오스 트랜지스터임을 특징으로 하는 고전압 스위치 회로.The high voltage switch circuit of claim 1, wherein the pumping capacitor is a depletion mode transistor. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950015226A 1995-06-09 1995-06-09 High voltage switching circuit for semiconductor memory KR0157343B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950015226A KR0157343B1 (en) 1995-06-09 1995-06-09 High voltage switching circuit for semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950015226A KR0157343B1 (en) 1995-06-09 1995-06-09 High voltage switching circuit for semiconductor memory

Publications (2)

Publication Number Publication Date
KR970003253A true KR970003253A (en) 1997-01-28
KR0157343B1 KR0157343B1 (en) 1998-12-01

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020034889A (en) * 2000-10-30 2002-05-09 니시무로 타이죠 Voltage switching circuit
KR100404001B1 (en) * 2001-12-29 2003-11-05 주식회사 하이닉스반도체 Charge pump circuit
US9601994B2 (en) 2015-02-06 2017-03-21 SK Hynix Inc. Internal voltage generation circuit

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100660638B1 (en) 2005-10-26 2006-12-21 삼성전자주식회사 High voltage generation circuit and semiconductor device including the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020034889A (en) * 2000-10-30 2002-05-09 니시무로 타이죠 Voltage switching circuit
KR100404001B1 (en) * 2001-12-29 2003-11-05 주식회사 하이닉스반도체 Charge pump circuit
US9601994B2 (en) 2015-02-06 2017-03-21 SK Hynix Inc. Internal voltage generation circuit

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Publication number Publication date
KR0157343B1 (en) 1998-12-01

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