KR960703313A - METHOD OF MANUFACTURING A DEVICE, BY IRRADIATING SOME PARTS OF THE SURFACE OF THE DEVICE DIRECTLY THROUGH A MASK, AND OTHER PARTS INDIRECTLY THROUGH THE MASK AND VIA A REFLECTING SURFACE , THEREBY PRODUCING A PATTERN) - Google Patents

METHOD OF MANUFACTURING A DEVICE, BY IRRADIATING SOME PARTS OF THE SURFACE OF THE DEVICE DIRECTLY THROUGH A MASK, AND OTHER PARTS INDIRECTLY THROUGH THE MASK AND VIA A REFLECTING SURFACE , THEREBY PRODUCING A PATTERN) Download PDF

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KR960703313A
KR960703313A KR1019950705639A KR19950705639A KR960703313A KR 960703313 A KR960703313 A KR 960703313A KR 1019950705639 A KR1019950705639 A KR 1019950705639A KR 19950705639 A KR19950705639 A KR 19950705639A KR 960703313 A KR960703313 A KR 960703313A
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mask
radiation
sensing layer
semiconductor device
manufacturing
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KR1019950705639A
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Korean (ko)
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KR100371729B1 (en
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요하네스 마리아 넬리쎈 안토니우스
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프레데릭 얀 스미트
필립스 일렉트로닉스 엔.브이.
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/703—Non-planar pattern areas or non-planar masks, e.g. curved masks or substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/24—Curved surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
    • H05K3/0082—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the exposure method of radiation-sensitive masks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0284—Details of three-dimensional rigid printed circuit boards
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09018—Rigid curved substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05—Patterning and lithography; Masks; Details of resist
    • H05K2203/0548—Masks
    • H05K2203/056—Using an artwork, i.e. a photomask for exposing photosensitive layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
    • H05K2203/1333—Deposition techniques, e.g. coating
    • H05K2203/135—Electrophoretic deposition of insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/061—Etching masks
    • H05K3/064—Photoresists
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/403—Edge contacts; Windows or holes in the substrate having plural connections on the walls thereof

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

본 발명은 소정의 표면(2)을 갖는 본체(1)가 제공되는 반도체 장치를 제조하는 방법에 관한 것으로, 이 표면의 적어도 일부(3,4)에는 복사선 감지층(arradiation- sensitive layer)(6)이 제공되고, 그 후 복사선 감지층(6)의 일부(7,8)는 마스크 (a mask)(12)를 통해 복사선(10)에 노출되어 팬턴화된다. 이러한 방법은 본체(1)가, 예를 들면, 인쇄 회로 보드(printed circuit board), 예를 들면, IC 또는 IC와 인쇄 회로 보드 사이의 어 댑터판(adapter plates)의 접속 박(connections foils)으로서 이용되는 장치의 제조에 특히 적합하다. 도전체 패턴이 복잡한 3차원(3-D) 형상의 인쇄 회로 보드의 상부 및 하부면(제각기 22,24)상에 제공되는 상술한 종류의 방법은 공지되어 있다. 이러한 목적을 위해, 감광층(a photosenstive layer)(6)은 전착(electrodeposition)을 통해 도전층상에 제공되고, 상부 및 하부 미스크를 통해 조명되며, 현상되어, 패턴화된다. 이 상술은 공지의 바업??은 여러개의 마스크가 이용되는 단점을 갖는다. 결과적으로 이 방법은 복잡하고, 비싸다. 본 발명에 따른 방법은, 복사선 감지층(6)의 일부가 마스크(12)를 통해 직접 조사되는 반면, 다른 일부는 마스크 및 복사선(10)을 반사하는 표면(13)을 통해 간접조사되는 것으로 특징된다. 따라서 복사선 감지층(6)의 몇몇 부분(7,8)이 하나의 마스크에 의해 조명될 수 있다. 하나의 마스크(12)와 반사표면(13)을 이용하여 보다 더 간단하며 보다 더 저가의 반도체 장치가 성취된다.The present invention relates to a method of manufacturing a semiconductor device provided with a main body (1) having a predetermined surface (2), wherein at least a portion (3, 4) of the surface has an radiation-sensitive layer (6). ) Is then provided, and portions 7, 8 of the radiation sensing layer 6 are then exposed to radiation 10 through a mask 12 and panned. This method allows the body 1 to be, for example, a printed circuit board, for example, as connection foils of an adapter plate between an IC or an IC and a printed circuit board. It is particularly suitable for the manufacture of the devices used. Methods of the kind mentioned above are known in which conductor patterns are provided on the upper and lower surfaces (22 and 24, respectively) of a complex three-dimensional (3-D) shaped printed circuit board. For this purpose, a photosenstive layer 6 is provided on the conductive layer via electrodeposition, illuminated through upper and lower microscopy, developed and patterned. This description has the disadvantage that known masks use several masks. As a result, this method is complex and expensive. The method according to the invention is characterized in that part of the radiation sensing layer 6 is irradiated directly through the mask 12 while the other part is indirectly irradiated through the surface 13 reflecting the mask and radiation 10. do. Thus several parts 7, 8 of the radiation sensing layer 6 can be illuminated by one mask. A simpler and lower cost semiconductor device is achieved using one mask 12 and a reflective surface 13.

선택도: 제 3도Selectivity: Third Degree

Description

반도체 장치 제조 방법 및 그에 의해 제조된 가늘고 긴 형상의 본체와 코일(METHOD OF MANUFACTURING A DEVICE, BY IRRADIATING SOME PARTS OF THE SURFACE OF THE DEVICE DIRECTLY THROUGH A MASK, AND OTHER PARTS INDIRECTLY THROUGH THE MASK AND VIA A REFLECTING SURFACE, THEREBY PRODUCING A PATTERN)METHOD OF MANUFACTURING A DEVICE, BY IRRADIATING SOME PARTS OF THE SURFACE OF THE DEVICE DIRECTLY THROUGH A MASK, AND OTHER PARTS INDIRECTLY THROUGH THE MASK AND VIA A REFLECTING SURFACE , THEREBY PRODUCING A PATTERN)

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 프리즘(prism)상의 복사선 감지층이 조사되는 본 발명에 따른 측면도이다,1 is a side view according to the present invention in which a radiation sensing layer on a prism is irradiated,

제2도는 구면상의 복사선 감지층이 조사되는 본 발명에 따른 방법의 측면도이다,2 is a side view of the method according to the invention in which a spherical radiation sensing layer is irradiated,

제2도는 3차원 릴리프를 갖는 본체상의 복사선 감지층이 조사되는 본 발명에 따른 방법의 측면도이다,2 is a side view of the method according to the invention in which a radiation sensing layer on a body having a three-dimensional relief is irradiated;

제4도는 투과되는 복사선의 상대적인 세기(1)를, 파라미터로서 시준 각에 따라, 거리(x)의 함수로서 나타낸 그래프이다.4 is a graph showing the relative intensity 1 of the transmitted radiation as a function of distance x, depending on the collimation angle as a parameter.

제5도는 본 발명에 따른 방법에서 이용된 마스크의 평면도이다.5 is a plan view of a mask used in the method according to the invention.

Claims (13)

소정의 표면을 갖는 본체가 제공된 반도체 장치를 제조하는 방법에 있어서, 복사선 감지층(radiation-sensitive)이 상기 표면의 적어도 일부상에 좋여지고, 그 후 상기 복사선 감지층의 부분이 마스크(mask)를 통해 복사선으로 조사(irradiate)되되, 상기 복사선 감지층의 일부는 상기 마스크를 통해 직접 조사되고, 다른 일부는 상기 마스크 및 상기 복사선을 반사하는 표면을 통해 간접 조사되는 것을 특징으로 하는 반도체 장치 제조 방법.A method of manufacturing a semiconductor device provided with a body having a predetermined surface, wherein a radiation-sensitive layer is provided on at least a portion of the surface, and then a portion of the radiation-sensing layer applies a mask. Irradiated with radiation, wherein a portion of the radiation sensing layer is directly irradiated through the mask, and another portion is indirectly irradiated through the mask and a surface reflecting the radiation. 제 1항에 있어서, 상기 복사선은 실질적으로 평행한 빔(a substantially beam)으로 이루어지는 반도체 제조방법.The method of claim 1, wherein the radiation is a substantially parallel beam. 제 2항에 있어서, 상기 복사선의 시준 각(a collimation angle) 1°미만인 반도체 장치 제조방법.The method of claim 2, wherein a collimation angle of the radiation is less than 1 °. 제 1항 내지 제 3항 중 어느 한 항에 있어서, 상기 복사선은 광 복사선(optical radiation)이고, 상기 반사 표면은 거울(a mirror)을 포함하는 반도체 장치 제조 방법.4. A method according to any one of the preceding claims, wherein said radiation is optical radiation and said reflective surface comprises a mirror. 제 1항 내지 제 3항 중 어느 한 항에 있어서, 조사되는 상기 감지층의 부분은, 상기 본체의 상부면 및 반대의 하부면상에 제공되며, 상기 마스크는 상기 한 측면에 인접하고 상기 반사 표면은 다른 측면에 인접하며, 상기 복사선은 소정의 각도로 상기 마스크 및 상기 반사 표면상에 입사되는 반도체 장치 제조방법.The method of claim 1, wherein the portion of the sensing layer to be irradiated is provided on an upper surface and an opposite lower surface of the body, wherein the mask is adjacent to one side and the reflective surface is Adjacent to the other side, wherein the radiation is incident on the mask and the reflective surface at a predetermined angle. 제 5항에 있어서, 상기 마스크 및 상기 반사 표면은 실질적으로 평행한 반도체 장치 제조 방법.6. The method of claim 5, wherein the mask and the reflective surface are substantially parallel. 제 5항 또는 제 6항에 있어서, 상기 본체에는 상기 상부면과 하부면을 연결하는 측면이 제공되고, 이 측면에는 상기 마스크 또는 상기 반사표면을 통해 조사되어 패턴화되는 복사선 감지층이 또한 제공되는 반도체 장치 제조방법.7. The body of claim 5 or 6, wherein the main body is provided with a side surface connecting the upper and lower surfaces, and the side surface is also provided with a radiation sensing layer irradiated and patterned through the mask or the reflective surface. Semiconductor device manufacturing method. 제 1항 내지 제 7항중 어느 한 항에 있어서, 상기 마스크는 주로 한 방향으로 형성된 패턴을 포함하며, 상기 복사선은 강기 패턴의 방향에 대해 평행 투사시에 하나를 초과하는 방향으로부터 상기 표면상으로 투사되는 반도체 장치 제조 방법.8. The mask according to any one of claims 1 to 7, wherein the mask comprises a pattern formed mainly in one direction, and the radiation is projected onto the surface from more than one direction in parallel projection with respect to the direction of the rigid pattern. Method of manufacturing a semiconductor device. 제 8항에 있어서, 상기 본체는 가늘고 긴 형상을 가지는 반면, 상기 마스크상의 상기 패턴의 방향은 상기 본체의 길이 방향에 실질적으로 수직인 반도체 장치 제조 방법.The method of claim 8, wherein the main body has an elongated shape while the direction of the pattern on the mask is substantially perpendicular to the longitudinal direction of the main body. 제 9항에 있어서, 코일(coil)은, 상기 본체의 상부, 하부 및 측면상으로 연장되어, 상기 본체를 나선형으로 들러싸는 도전체 트랙(a conductor tracks)을 제조하는, 가늘고 긴 본체(an elongate body)상에 패턴화된 상기 복사선 감지층을 이용함으로써 제조되는 반도체 장치 제조 방법.10. The elongate of claim 9, wherein a coil extends on top, bottom, and side surfaces of the body to produce a conductor tracks that spirally enclose the body. A method of manufacturing a semiconductor device manufactured by using the radiation sensing layer patterned on a body). 제 1항에 있어서, 상기 복사선 감지층에 의해 패턴화되는 도전층 (a conductive layer)이, 상기 본체상에 놓여지는 반도체 장치 제조방법.The semiconductor device manufacturing method according to claim 1, wherein a conductive layer patterned by the radiation sensing layer is placed on the main body. 제 9항 또는 제 10항에 청구되는 방법에 의해 획득된 패턴화된 층(a patterned layer)이 제공되는 것을 특징으로 하는 가늘고 긴 본체(a body of elongate shape).A body of elongate shape, characterized in that a patterned layer obtained by the method as claimed in claim 9 or 10 is provided. 제 10항에 청구되는 방법에 의해 획득된 도전체 트랙이 제공되는 것을 특징으로 하는 코일.A coil characterized in that a conductor track obtained by the method as claimed in claim 10 is provided. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950705639A 1994-04-15 1995-04-07 Method of manufacturing a device, by irradiating some parts of the surface of the device directly through a mask, and other parts indirectly through the mask and via a reflecting surface, thereby producing a pattern KR100371729B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP94201028.1 1994-04-15
EP94201028 1994-04-15

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KR960703313A true KR960703313A (en) 1996-06-19
KR100371729B1 KR100371729B1 (en) 2003-04-08

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US (1) US5686230A (en)
EP (1) EP0704145B1 (en)
JP (1) JP3736850B2 (en)
KR (1) KR100371729B1 (en)
DE (1) DE69518708T2 (en)
MY (1) MY112900A (en)
TW (1) TW353857B (en)
WO (1) WO1995028820A1 (en)

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US5686230A (en) 1997-11-11
JP3736850B2 (en) 2006-01-18
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EP0704145B1 (en) 2000-09-06
EP0704145A1 (en) 1996-04-03
KR100371729B1 (en) 2003-04-08
DE69518708T2 (en) 2001-06-07
JPH08511913A (en) 1996-12-10
MY112900A (en) 2001-10-31
TW353857B (en) 1999-03-01

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