KR960701470A - LIQUID METAL HEAT CONDUCTING MEMBER AND INTEGRATED CIRCUIT PACKAGE INCORPORATING SAME - Google Patents

LIQUID METAL HEAT CONDUCTING MEMBER AND INTEGRATED CIRCUIT PACKAGE INCORPORATING SAME Download PDF

Info

Publication number
KR960701470A
KR960701470A KR1019950703994A KR19950703994A KR960701470A KR 960701470 A KR960701470 A KR 960701470A KR 1019950703994 A KR1019950703994 A KR 1019950703994A KR 19950703994 A KR19950703994 A KR 19950703994A KR 960701470 A KR960701470 A KR 960701470A
Authority
KR
South Korea
Prior art keywords
integrated circuit
space
circuit package
liquid metal
compliant body
Prior art date
Application number
KR1019950703994A
Other languages
Korean (ko)
Inventor
테리 레이톤 윌버
오테가 모란지 블란퀴타
마리 토레스 앤젤라
Original Assignee
로날드 씨. 안데르슨
유니시스 코오퍼레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/040,732 external-priority patent/US5323294A/en
Application filed by 로날드 씨. 안데르슨, 유니시스 코오퍼레이션 filed Critical 로날드 씨. 안데르슨
Publication of KR960701470A publication Critical patent/KR960701470A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433Auxiliary members in containers characterised by their shape, e.g. pistons
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01014Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0103Zinc [Zn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

집적회로 패키지(10)는 집적회로 칩(11), 이 칩을 고정 시키는 기판(12), 그리고 칩(11)에 연결된 그리고 칩으로부터 유체 메카니즘으로 열을 전도시키기 위한 경로(13 및 14를 통해)를 제공하는 열전도 메카니즘(15)으로 이루어진다. 이같은 열전도 매카니즘은 a)미소의 빈공간 구멍을 가지며 열전도 경로내 배치되고 한 공간(G)를 채우는 컴플라이언트 몸체, 그리고 b) 컴플라이언트 몸체의 미소의 빈공간내에 흡수되며 부분적으로 이들을 채우는 액체 금속합금(15b)을 더욱더 포함한다. 액체 금속합금에 의해 단지 부분적으로만 채워지는 몸채내 공간들로 인해, 집적회로 패키지내에 고정된 액체 금속합금 밖으로 강제하지 않고 직접회로 패키지내 크기 변동에 의해 눌려질 수 있다.The integrated circuit package 10 includes an integrated circuit chip 11, a substrate 12 holding the chip, and paths 13 and 14 connected to the chip 11 and for conducting heat from the chip to the fluidic mechanism. It consists of a heat conduction mechanism (15) to provide. This thermal conduction mechanism is a) a compliant body having a micro void hole and disposed in the heat conduction path and filling one space (G), and b) a liquid metal alloy absorbed and partially filled in the micro void of the compliant body. And further includes (15b). Due to the in-body spaces only partially filled by the liquid metal alloy, it can be pressed by the size variation in the integrated circuit package without forcing it out of the liquid metal alloy fixed in the integrated circuit package.

Description

액체 금속 열전도부재 및 이를 이용한 집적회로 패키지(LIQUID METHAL HEAT CONDUCTING MEMBER AND INTEGRATED CIRCUIT PACKAGE INCORPORATING SAME)LIQUID METHAL HEAT CONDUCTING MEMBER AND INTEGRATED CIRCUIT PACKAGE INCORPORATING SAME

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발며의 바람직한 실시예인 집적회로 패키지의 개략적인 실제크기의 도면,1 is a schematic actual size drawing of an integrated circuit package, which is a preferred embodiment of the present invention;

제2도는 제1도 실시예의 2-2선 확대단면도,2 is an enlarged cross-sectional view taken along line 2-2 of the first embodiment;

제3도는 제1도 및 제2도 실시예내의 컴플라이언트 스폰지 부재의 미세구조를 도시한 도면,FIG. 3 shows the microstructure of the compliant sponge member in the FIGS. 1 and 2 embodiment;

제4A-4F도는 제1도-3도 실시예를 제작하기 위한 바람직한 공정의 단계를 설명하는 한 세트의 스케치와 현미경사진을 도시한 도면.4A-4F show a set of sketches and micrographs illustrating the steps of a preferred process for fabricating the FIGS. 1-3-3 embodiment.

Claims (26)

집적회로 칩, 상기 칩을 보유하는 기관, 그리고 상기 칩으로 부터 유체매체로 열을 전달시키기 위한 한 경로를 제공하는 상기 칩에 연결된 열전단 메카니즘으로 구성된 집적회로 페키지에 있어서; 상기 열 전달 메카니즘이 예정된 크기 허용 오차를 갖는, 상기 열 전도 경로내 작은 공간내에 배치된 미소공간을 전체에 걸쳐 가지는 컬플라이언트 몸체; 상기 몸체내에 흡수되어 상기 공간을 부분적으로 채우는 액체 금속합금; 그리고 상기 공간내에서 균일한 밀도로 상기 액체를 보유하는 동안 상기 허용오차에도 불구하고 상기 컴플레이트가 상기 공간을 채우도록 압축되는 상기 컴플레이트 몸체를 더욱더 포함함을 특징으로 하는 액체 금속 열전도 부재를 사용한 집적회로 패키지.An integrated circuit package comprising an integrated circuit chip, an engine holding the chip, and a thermal shear mechanism coupled to the chip that provides a path for heat transfer from the chip to a fluid medium; A compliant body having a microspace disposed throughout a small space in the heat conduction path, the heat transfer mechanism having a predetermined size tolerance; A liquid metal alloy absorbed in the body to partially fill the space; And further comprising the plate body being compressed to fill the space despite the tolerance while retaining the liquid at a uniform density within the space. Integrated circuit package. 제1항에 있어서, 상기 컴프라이언트 몸체가 한 연속된 다공성 물체임을 특징으로 하는 집적회로 패키지.The integrated circuit package of claim 1 wherein the compliant body is a continuous porous object. 제2항에 있어서, 상기 액체 금속합금이 표면에 집착되나, 상기 다공성 몸체내 대부분의 구멍들을 채우지는 못함을 특징으로 하는 집적회로 패키지.3. The integrated circuit package of claim 2, wherein the liquid metal alloy adheres to the surface but does not fill most of the holes in the porous body. 제1항에 있어서, 상기 컴플라이언트 몸체가 다수의 섞여 짜여진 섬유임을 특징으로 하는 집적회로 패키지.2. The integrated circuit package of claim 1, wherein the compliant body is a plurality of interwoven fibers. 제4항에 있어서, 상기 액체 금속합금이 표면에 부착되거나 상기 섞여 짜여진 섬유들의 그물을 채우지 않음을 특징으로 하는 집적회로 패키지.5. The integrated circuit package of claim 4, wherein the liquid metal alloy does not adhere to the surface or fill the net of interwoven fibers. 제1항에 있어서, 상기 컴플라이언트 몸체가 상기 금속합금 보다 낮은 열전도도를 가짐을 특징으로 하는 집적회로 패키지.The integrated circuit package of claim 1, wherein the compliant body has a lower thermal conductivity than the metal alloy. 제1항에 있어서, 상기 컴플라이언트 몸체가 유기 플라스틱임을 특징으로 하는 집적회로 패키지.2. The integrated circuit package of claim 1 wherein the compliant body is an organic plastic. 제1항에 있어서, 상기 컴플라이언트 몸체가 셀룰로오즈, 실리콘, 금속, 솜 및 울로부터 선택됨을 특징으로 하는 집적회로 패키지.The integrated circuit package of claim 1 wherein the compliant body is selected from cellulose, silicon, metal, cotton and wool. 제1항에 있어서, 상기 액체 금속합금이 적어도 갈륨을 포함함을 특징으로 하는 집적회로 패키지.The integrated circuit package of claim 1 wherein the liquid metal alloy comprises at least gallium. 제1항에 있어서, 상기 열 전도 메카니즘이 상기 기판에 부착되며, 상기 기판과 함께 한 공동내에 상기 칩을 에워싸는 한 리드를 포함하고, 상기 컴플레이트 몸체가 상기 칩과 리드 사이의 공동내에서 스퀴즈됨을 특징으로 하는 집적회로 패키지.The method of claim 1, wherein the thermal conduction mechanism is attached to the substrate and includes a lead that encloses the chip in a cavity with the substrate, wherein the platen body is squeezed in a cavity between the chip and the lead. Integrated circuit package. 제1항에 있어서, 상기 열 전도 메카니즘이 리테이너에 의해 상기 기판을 향해 강제되는 한 히트싱크를 포함하고, 상기 컴플라이언트 몸체가 상기 히트싱크와 상기 기판 사이에서 리테이너에 의해 스퀴즈됨을 특징으로 하는 집적회로 패키지.2. The integrated circuit of claim 1, wherein the heat conduction mechanism includes a heat sink as long as it is forced by the retainer toward the substrate, and the compliant body is squeezed by the retainer between the heat sink and the substrate. package. 제1항에 있어서, 일정한 열 전달부재가 상기 공간에 인접한 열 전도 경로내에 있음을 특징으로 하는 집적회로 패키지.2. The integrated circuit package of claim 1, wherein the constant heat transfer member is in a heat conduction path adjacent to the space. 제1항에 있어서, a) 상기 패키지내에 상기 기판에 의해 고정된 다수의 집적회로 칩이 있으며, b) 상기 열 전도 메카니즘이 상기 칩 각각에 연결되어 상기 칩으로부터의 열을 전달시키기 위한 각 경로를 제공하며, 그리고 c) 이같은 경로가 한 공간을 포함하며 상기 액체 금속합금을 갖는 컴플라이언트 몸체가 반복됨을 특징으로 하는 집적회로 패키지.2. The device of claim 1, wherein a) there are a plurality of integrated circuit chips fixed by the substrate in the package, and b) each thermal conduction mechanism is coupled to each of the chips to pass each path for transferring heat from the chip. And c) such a path comprises a space and the compliant body with the liquid metal alloy is repeated. 제1항에 있어서, a) 상기 패키지내에 상기 기판에 의해 고정된 다수의 집적회로 칩이 있으며, b) 상기 열 전도 메카니즘이 상기 칩 각각에 연결되어 상기 칩으로부터의 열을 전달시키기 위한 각 경로를 제공하며, 그리고 c) 이같이 경로가 한 공간을 포함하며 상기 액체 금속 합금을 갖는 컴플라이언트 몸체가 공간마다 계속해서 이어질 수 있음을 특징으로 하는 집적회로 패키지.The method of claim 1, wherein a) there are a plurality of integrated circuit chips held by the substrate in the package, and b) each thermal conduction mechanism is coupled to each of the chips to pass each path for transferring heat from the chip. And c) such a path comprises a space and wherein the compliant body with the liquid metal alloy can be continued from space to space. 전체적으로 미소공간을 갖는 컴플라이언트 몸체, 균일한 밀도를 갖는 상기 몸체내에 흡수되며 상기 미세 공간을 부분적으로 채우는 액체 금속합금, 그리고 예정된 크기 허용오차를 갖는 공간을 채울정도로 충분히 압축될 수 있으며 상당히 균일한 밀도를 가지는 액체를 상기 공간내에 유지시키는 컴플레인트 몸체로 이루어진 컴플레인트 열 전도 부재.Compliant body with overall microspace, liquid metal alloy absorbed within the body with uniform density and partially filling the microcavity, and compact enough to fill a space with predetermined size tolerance and fairly uniform density A composite heat conducting member comprising a compound body for retaining a liquid having a liquid in the space. 제15항에 있어서, 상기 컴플라이언트 몸체가 한 연속된 다공성 몸체임을 특징으로 하는 열전도 부재.16. The thermally conductive member of claim 15, wherein the compliant body is a continuous porous body. 제16항에 있어서, 상기 액체 금속합금이 표면에 접착되나, 상기 다공성 몸체내 대부분의 구멍들을 채우지는 못함을 특징으로 하는 열 전도 부재.17. The heat conduction member of claim 16, wherein the liquid metal alloy adheres to a surface but does not fill most of the pores in the porous body. 제15항에 있어서, 상기 컴플라이언트 몸체가 다수의 섞여 짜여진 섬유들임을 특징으로 하는 열 전도 부재.16. The thermal conduction member of claim 15, wherein the compliant body is a plurality of interwoven fibers. 제18항에 있어서, 상기 액체 금속합금이 표면에 부착되거나 상기 섞여 짜여진 섬유들의 그물을 채우지 않음을 특징으로 하는 열 전도 부재.19. The heat conduction member of claim 18, wherein the liquid metal alloy does not adhere to the surface or fill the net of interwoven fibers. 1)기판, 2)상기 기판상에 장착된 집적회로 칩, 그리고 3)상기 칩에 연결된 한 공간을 포함하는 열전도 메카니즘을 제공하며, 액체 금속합금을 갖는 미소공간을 전체적으로 갖는 한 컴플라이언트 몸체를 포화시키고, 상당부분의 상기 합금을 상기 컴플라이언트 몸체로부터 제거시키어 모든 남아있는 합금이 표면장력과 부착력에 의해 상기 공간내에 고정되도록 하고, 그리고 상기 합금을 상기 몸체로부터 강제시키지 않고 상기 공간내에 남아있는 합금으로 상기 컴플라이언트 몸체를 압축시키는 단계를 포함함을 특징으로 하는 집적회로 패키지 제조방법.1) a thermal conduction mechanism comprising a substrate, 2) an integrated circuit chip mounted on the substrate, and 3) a space connected to the chip, and saturating a compliant body having a microspace with a liquid metal alloy as a whole. And remove a substantial portion of the alloy from the compliant body so that all remaining alloy is fixed in the space by surface tension and adhesion, and the alloy remains in the space without forcing the alloy from the body. And compressing the compliant body. 제20항에 있어서, 상기 합금이 상기 컴플라이언트 몸체내에서 포화되는 때 이같은 몸체를 스퀴즈함을 특징으로 하는 집적회로 패키지 제조방법.21. The method of claim 20 wherein the alloy squeezes such a body as it saturates within the compliant body. 제20항에 있어서, 상기 제거단계가 상기 합금이 포화된 때 상기 컴플라이언트 몸체를 원심분리 시킴을 포함함을 특징으로 하는 집적회로 패키지 제조방법.21. The method of claim 20, wherein said removing comprises centrifuging said compliant body when said alloy is saturated. 제20항에 있어서, 상기 제거단계가 상기 합금이 포화된 때 상기 컴플라이언트 몸체를 진공시킴을 포함함을 특징으로 하는 집적회로 패키지 제조방법.21. The method of claim 20, wherein said removing comprises evacuating said compliant body when said alloy is saturated. 제20항에 있어서, 상기 제거단계가 상기 합금이 포화된 때 상기 컴플라이언트 몸체를 흔듦을 포함함을 특징으로 하는 집적회로 패키지 제조방법.21. The method of claim 20, wherein said removing step includes shaking said compliant body when said alloy is saturated. 제20항에 있어서, 상기 합금의 박막이 상기 미세공간들을 지나 상기 몸체내 임의의 위치에 남아있도록 상기 제거 단계가 수행됨을 특징으로 하는 집적회로 패키지 제조방법.21. The method of claim 20, wherein said removing step is performed such that said thin film of alloy remains beyond said microcavities in any position within said body. 제25항에 있어서, 상기 컴플라이언트 몸체의 두께를 상기 박막의 두께만큼 줄어들이는 단계를 더욱더 포함함을 특징으로 하는 집적회로 패키지 제조방법.27. The method of claim 25, further comprising reducing the thickness of the compliant body by the thickness of the thin film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950703994A 1993-03-31 1994-03-24 LIQUID METAL HEAT CONDUCTING MEMBER AND INTEGRATED CIRCUIT PACKAGE INCORPORATING SAME KR960701470A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US08/040.732 1993-03-31
US08/040,732 US5323294A (en) 1993-03-31 1993-03-31 Liquid metal heat conducting member and integrated circuit package incorporating same
US21052794A 1994-03-18 1994-03-18
US08/210,527 1994-03-18
PCT/US1994/003204 WO1994023450A1 (en) 1993-03-31 1994-03-24 Liquid metal heat conducting member and integrated circuit package incorporating same

Publications (1)

Publication Number Publication Date
KR960701470A true KR960701470A (en) 1996-02-24

Family

ID=26717355

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950703994A KR960701470A (en) 1993-03-31 1994-03-24 LIQUID METAL HEAT CONDUCTING MEMBER AND INTEGRATED CIRCUIT PACKAGE INCORPORATING SAME

Country Status (5)

Country Link
EP (1) EP0692142A1 (en)
JP (1) JPH08508611A (en)
KR (1) KR960701470A (en)
CA (1) CA2158255A1 (en)
WO (1) WO1994023450A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100576657B1 (en) * 1997-12-02 2006-07-25 노오텔 네트웍스 리미티드 Flexible intergrated circuit package

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5459352A (en) * 1993-03-31 1995-10-17 Unisys Corporation Integrated circuit package having a liquid metal-aluminum/copper joint
JPH11186003A (en) 1997-12-25 1999-07-09 Yazaki Corp Heat sink structure of ptc device
DE102017207329A1 (en) * 2017-05-02 2018-11-08 Siemens Aktiengesellschaft Electronic assembly with a built between two substrates component and method for its preparation
JP6917287B2 (en) * 2017-12-11 2021-08-11 日立Astemo株式会社 Electronic control device
JP7282929B1 (en) * 2022-01-07 2023-05-29 レノボ・シンガポール・プライベート・リミテッド Manufacturing method of heat dissipation structure
JP7397921B1 (en) * 2022-07-05 2023-12-13 レノボ・シンガポール・プライベート・リミテッド Heat dissipation structure and electronic equipment
JP7362854B1 (en) * 2022-07-28 2023-10-17 レノボ・シンガポール・プライベート・リミテッド Heat dissipation structure and electronic equipment

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4233645A (en) * 1978-10-02 1980-11-11 International Business Machines Corporation Semiconductor package with improved conduction cooling structure
FR2480488A1 (en) * 1980-04-15 1981-10-16 Eaton Manford Heat conducting and electrically insulating binder - comprising e.g. metal oxide particles in adhesive matrix e.g. silicone used for heat transfer
US4994903A (en) * 1989-12-18 1991-02-19 Texas Instruments Incorporated Circuit substrate and circuit using the substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100576657B1 (en) * 1997-12-02 2006-07-25 노오텔 네트웍스 리미티드 Flexible intergrated circuit package

Also Published As

Publication number Publication date
CA2158255A1 (en) 1994-10-13
EP0692142A1 (en) 1996-01-17
JPH08508611A (en) 1996-09-10
WO1994023450A1 (en) 1994-10-13

Similar Documents

Publication Publication Date Title
US5323294A (en) Liquid metal heat conducting member and integrated circuit package incorporating same
US6959753B1 (en) Construction of phase change material embedded electronic circuit boards and electronic circuit board assemblies using porous and fibrous media
US7063127B2 (en) Method and apparatus for chip-cooling
US7709951B2 (en) Thermal pillow
US7086147B2 (en) Method of accommodating in volume expansion during solder reflow
US5658831A (en) Method of fabricating an integrated circuit package having a liquid metal-aluminum/copper joint
US7421780B2 (en) Methods for fabricating thermal management systems for micro-components
US4823863A (en) Thermal conduction device
KR950024313A (en) High heat dissipation semiconductor package
US20070240858A1 (en) Heat pipe with composite capillary wick structure
KR960701470A (en) LIQUID METAL HEAT CONDUCTING MEMBER AND INTEGRATED CIRCUIT PACKAGE INCORPORATING SAME
US20060225908A1 (en) Method of making a heat dissipating microdevice
KR910013521A (en) Evaporator with etched fiber nucleation site and method for manufacturing same
KR20030005243A (en) Method for producing a heat-conducting connection between two work pieces
EP2232550B1 (en) Semiconductor device thermal connection
KR950034715A (en) Electronic module for removing heat from semiconductor die and manufacturing method thereof
US20080079109A1 (en) Thermoelectric device and method for making the same
JP2007173825A (en) Device and method for forming thermal interface (low melting-temperature alloy structure for improved thermal interface)
EP3305048A1 (en) Electronic board and associated manufacturing method
US8806742B2 (en) Method of making an electronic package
JP2007048858A (en) Semiconductor device and manufacturing method thereof
JP2004506318A (en) Adhesion of printed circuit board to heat sink
JP4345835B2 (en) Semiconductor device and manufacturing method thereof
JP2002353356A (en) Package for storing semiconductor device
JP3554304B2 (en) Semiconductor element storage package and semiconductor device

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid