KR960043379A - Compound Semiconductor Laser Diode and Manufacturing Method Thereof - Google Patents

Abstract

The present invention relates to a compound semiconductor laser diode and a method of manufacturing the same.

In the compound semiconductor laser diode according to the present invention, the InGaAlP upper clad layer 16 is formed in a double step structure to change the refractive index to enable the fundamental mode oscillation, to lower the astigmatism, and to increase the efficiency of the device due to the reduced light absorption. And to reduce the critical current. In addition, according to the method of manufacturing a compound semiconductor laser diode according to the present invention, by using GaAs, AlGaAs, and InGaAsP as a buffer layer as a material having a selectivity on the upper surface of the current passivation layer, the undercut can be easily controlled during selective etching, and a dielectric film mask That is, since the epitaxial layer under the SiO ₂ layer 22 is removed, the crystallinity is lowered due to the stress caused by lattice mismatch with SiO ₂ , and the effect of solving the problem of increasing resistance can be obtained.

Description

Compound Semiconductor Laser Diode and Manufacturing Method Thereof

As this is a public information case, the full text was not included.

2 is a first growth step of sequentially stacking a laser oscillation layer, FIG. 3 is a step of forming a SiO ₂ dielectric film mask, FIG. 4 is a step of forming an undercut of a second buffer layer by selective etching, and FIG. 5 is a ridge structure by selective etching. FIG. 6 shows a second etching step for forming a double step of the upper clad layer, and FIG. 7 shows a second growth step for growing a current blocking layer on the ridge top surface, FIGS. 8 and 9. Figures respectively show the mask removal step and the device completion step by forming the electrode layer.

Claims (7)

The lower cladding layer, the active layer, and the upper cladding layer are sequentially stacked between the substrate and the cap layer to form a laser oscillation layer, and a ridge is formed on the upper surface of the center of the upper cladding layer of the laser oscillation layer. In the upper layer portion of the ridge, a conductive layer easily forms an upper layer portion, and a compound semiconductor laser diode having a current blocking layer interposed on both upper surfaces of the upper clad layer, wherein a step portion is formed on both sides of the ridge. Compound semiconductor laser diode. The compound semiconductor laser diode of claim 1, wherein the stepped portion has a step within 0.1 to 0.2 μm. The first buffer layer, the lower cladding layer, the active layer, the upper cladding layer, and the electrically conductive double layer are sequentially stacked on the upper surface of the substrate by an epitaxy process, and are laminated on the upper surface of the second electrically conductive layer. A first growth step of first growing the buffer layer by an epitaxy process; Forming a SiO ₂ dielectric film on the upper surface of the second buffer layer and forming an etch mask through patterning; A first etching step of etching both ends of the second buffer layer and the two layers for electricity transfer, and forming both ends of the upper clad layer by a predetermined depth to form a ridge in a central portion thereof; A second etching step of further etching the both ends of the upper clad layer by a predetermined depth to form a step portion; A second growth step of growing by stacking a current blocking layer slightly protruding to both side surfaces of the upper clad layer to a ridge structure side of the upper clad layer and the conductive double layer; A mask removing step of removing the dielectric film mask formed on the upper surface of the second buffer layer and the second buffer layer formed of the stripe having the predetermined width; And a third growth step of sequentially growing a cap layer on an upper surface of the upper cladding layer, the upper surface of the ridge, and an upper layer of the electricity transfer layer. The method of manufacturing a compound semiconductor laser diode according to claim 3, wherein in the dielectric film mask forming step, a stripe width is formed to be 2 to 6 탆 larger than that of a conventional SBR structure. The method of claim 3, wherein in the first etching step, the second buffer layer is etched to form undercuts within a range of about 1 μm to about 3 μm. The method of claim 3, wherein the stepped portions formed on both ends of the upper clad layer by dry etching in the second etching step are etched to a depth within a range of 0.1 to 0.2 μm. The method of claim 3, wherein the material of the second buffer layer is any one of GaAs, AlGaAs, and InGaAsP. ※ Note: The disclosure is based on the initial application.