KR960042725A - Semiconductor memory using external power voltage as word line driving voltage - Google Patents

Semiconductor memory using external power voltage as word line driving voltage Download PDF

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Publication number
KR960042725A
KR960042725A KR1019950012273A KR19950012273A KR960042725A KR 960042725 A KR960042725 A KR 960042725A KR 1019950012273 A KR1019950012273 A KR 1019950012273A KR 19950012273 A KR19950012273 A KR 19950012273A KR 960042725 A KR960042725 A KR 960042725A
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KR
South Korea
Prior art keywords
word line
voltage
power supply
supply voltage
semiconductor memory
Prior art date
Application number
KR1019950012273A
Other languages
Korean (ko)
Other versions
KR0164816B1 (en
Inventor
경계현
조수인
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950012273A priority Critical patent/KR0164816B1/en
Priority to JP8121453A priority patent/JPH08339684A/en
Publication of KR960042725A publication Critical patent/KR960042725A/en
Application granted granted Critical
Publication of KR0164816B1 publication Critical patent/KR0164816B1/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)

Abstract

1. 청구범위에 기재된 발명이 속하는 기술 분야1. TECHNICAL FIELD OF THE INVENTION

본 발명은 비트라인쌍과 워드라인 사이에 매트릭스형태로 접속된 다수의 메모리셀과, 내부전원전압 발생수단을 사용하는 반도체 메모리에 관한 것이다.The present invention relates to a plurality of memory cells connected in a matrix form between a pair of bit lines and a word line, and a semiconductor memory using an internal power supply voltage generating means.

2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention

통상 워드라인의 구동전압으로 상기 내부전원전압 이상의 전압이 사용된다. 그 이유는 메모리셀내에 저장된 데이타를 충분히 엑세스하기 위해서이다. 따라서 종래에는 내부전원전압을 승압하여 상술한 워드라인의 구동전압으로 사용하였다. 상기와 같은 승압전압을 발생시키기 위해서 부스팅회로나 고전압발생회로와 같은 별도의 승압전압발생장치를 칩내부에 구비해야 하고 이로 인하여 칩면적이 크게 되는 문제점이 발생하였다. 또 상기 회로들의 전력소비도 늘어나게 된다.Usually, a voltage higher than the internal power supply voltage is used as the driving voltage of the word line. The reason is to fully access the data stored in the memory cell. Therefore, conventionally, the internal power supply voltage was boosted and used as the driving voltage of the word line described above. In order to generate the boosted voltage as described above, a separate boosted voltage generator such as a boosting circuit or a high voltage generation circuit must be provided inside the chip, thereby causing a problem in that the chip area is increased. The power consumption of the circuits also increases.

3. 발명의 해결방법의 요지3. Summary of Solution to Invention

이를 위하여 본 발명에서는 상기 워드라인의 구동전압으로 외부전원전압을 사용하였다.To this end, in the present invention, an external power supply voltage is used as the driving voltage of the word line.

4. 발명의 중요한 용도4. Important uses of the invention

상기 외부전원전압을 워드라인의 구동전압으로 사용하게 됨으로써 상술한 부스팅회로나 고전압발생회로를 사용하지 않아도 된다. 따라서 상기 부스팅회로나 고전압발생회로가 차지하는 칩면적을 줄여 고집적에 유리하고 전력소비를 줄인 반도체 메모리를 사용할 수 있게 된다.Since the external power supply voltage is used as the driving voltage of the word line, it is not necessary to use the boosting circuit or the high voltage generation circuit described above. As a result, the chip area occupied by the boosting circuit or the high voltage generating circuit can be reduced, so that a semiconductor memory can be used which is advantageous for high integration and reduces power consumption.

Description

외부전원전압을 워드라인구동전압으로 사용하는 반도체 메모리Semiconductor memory using external power voltage as word line driving voltage

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명의 실시예에 따라 워드라인구동전압으로 외부전원전압을 사용하는 반도체 메모리를 보여주는 블럭도.3 is a block diagram illustrating a semiconductor memory using an external power supply voltage as a word line driving voltage according to an embodiment of the present invention.

Claims (3)

비트라인쌍과 워드라인 사이에 매트릭스형태로 접속된 다수의 메모리셀과, 내부회로동작에 사용되는 내부전원전압을 발생하는 내부전원전압 발생수단과, 워드라인선택수단의 출력에 응답하여 승압된 워드라인전압을 워드라인으로 공급하는 워드라인 구동수단을 구비하는 반도체 메모리에 있어서, 상기 워드라인을 구동하기 위한 워드라인구동수단에 외부전원전압을 공급함을 특징으로 하는 반도체 메모리.A plurality of memory cells connected in a matrix form between a pair of bit lines and a word line, an internal power supply voltage generating means for generating an internal power supply voltage used for internal circuit operation, and a word boosted in response to the output of the word line selection means A semiconductor memory comprising word line driving means for supplying a line voltage to a word line, the semiconductor memory comprising supplying an external power supply voltage to a word line driving means for driving the word line. 제1항에 있어서, 상기 메모리셀이 다이나믹 랜덤 액세스 메모리임을 특징으로 하는 반도체 메모리.2. The semiconductor memory of claim 1 wherein the memory cell is a dynamic random access memory. 제1항에 있어서, 상기 메모리셀이 스태틱 랜덤 액세스 메모리임을 특징으로 하는 반도체 메모리.The semiconductor memory according to claim 1, wherein said memory cell is a static random access memory. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950012273A 1995-05-17 1995-05-17 Semiconductor memory using word line driving voltage KR0164816B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019950012273A KR0164816B1 (en) 1995-05-17 1995-05-17 Semiconductor memory using word line driving voltage
JP8121453A JPH08339684A (en) 1995-05-17 1996-05-16 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950012273A KR0164816B1 (en) 1995-05-17 1995-05-17 Semiconductor memory using word line driving voltage

Publications (2)

Publication Number Publication Date
KR960042725A true KR960042725A (en) 1996-12-21
KR0164816B1 KR0164816B1 (en) 1999-02-01

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100765439B1 (en) * 2006-04-11 2007-10-11 경북대학교 산학협력단 Sram utilizing dual-boosted cell bias technique
KR100846392B1 (en) * 2006-08-31 2008-07-15 주식회사 하이닉스반도체 Semiconductor memory device
US7936615B2 (en) 2007-02-27 2011-05-03 Samsung Electronics Co., Ltd. Methods for supplying power supply voltages in semiconductor memory devices and semiconductor memory devices using the same

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2753218B2 (en) * 1986-01-31 1998-05-18 株式会社日立製作所 Semiconductor storage device

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JPH08339684A (en) 1996-12-24

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