KR960042221A - How to check the lens efficiency ratio of semiconductor exposure equipment - Google Patents
How to check the lens efficiency ratio of semiconductor exposure equipment Download PDFInfo
- Publication number
- KR960042221A KR960042221A KR1019950012601A KR19950012601A KR960042221A KR 960042221 A KR960042221 A KR 960042221A KR 1019950012601 A KR1019950012601 A KR 1019950012601A KR 19950012601 A KR19950012601 A KR 19950012601A KR 960042221 A KR960042221 A KR 960042221A
- Authority
- KR
- South Korea
- Prior art keywords
- lens
- ratio
- efficiency ratio
- pattern
- efficiency
- Prior art date
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Abstract
본 발명은 반도체 노광장비의 렌즈 효율비(lens efficiency rate) 체크(check) 방법에 관한 것으로서, 보다 구체적으로는 반도체 소자의 노광 공정시 렌즈의 효율에 따라 패턴의 균일도를 모니터링함으로써 렌즈의 현 상태를 파악할 수 있게 되어 보다 정확한 패턴의 형성이 가능하게 한 반도체 노광장비의 렌즈 효율비 체크방법에 관한 것으로서, 일정 비율로 가감되는 렌즈 효율비에 대응하는 위치에 크롬이 형성된 레티클에 빛을 조사하고, 그 투과된 빛이 프로젝션 렌즈에 의해 축소, 주사되어 패턴이 형성된 웨이퍼의 패턴 비율을 상기 크롬의 형성 비율과 비교하여 렌즈의 효율비를 체크함으로써 렌즈 효율비의 설정이 가능하고, 따라서 웨이퍼가 안치된 스테이지의 설치 높이의 범위 설정이 가능하며, 또한 렌즈의 이상 유무가 손쉽게 파악되어 렌즈의 보정 및 교환등의 조치를 용이하게 취할 수가 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for checking a lens efficiency rate of a semiconductor exposure apparatus, and more particularly, to monitor the current state of a lens by monitoring the uniformity of a pattern according to the efficiency of a lens during an exposure process of a semiconductor device. The present invention relates to a method for checking the lens efficiency ratio of a semiconductor exposure apparatus that enables the formation of a more accurate pattern, and irradiates light to a reticle in which chromium is formed at a position corresponding to the lens efficiency ratio that is added or subtracted at a constant ratio. It is possible to set the lens efficiency ratio by checking the efficiency ratio of the lens by comparing the pattern ratio of the wafer on which the transmitted light is reduced and scanned by the projection lens with the pattern formation ratio with the chromium formation ratio, and thus the stage where the wafer is placed It is possible to set the installation height of the range, and also easily determine whether the lens is abnormal Measures such as exchanges and can easily be taken.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
첨부된 도면은 본 발명에 따른 레티클의 구성도.The accompanying drawings are schematic diagrams of a reticle according to the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950012601A KR960042221A (en) | 1995-05-19 | 1995-05-19 | How to check the lens efficiency ratio of semiconductor exposure equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950012601A KR960042221A (en) | 1995-05-19 | 1995-05-19 | How to check the lens efficiency ratio of semiconductor exposure equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960042221A true KR960042221A (en) | 1996-12-21 |
Family
ID=66525264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950012601A KR960042221A (en) | 1995-05-19 | 1995-05-19 | How to check the lens efficiency ratio of semiconductor exposure equipment |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960042221A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100437605B1 (en) * | 2001-09-05 | 2004-06-30 | 주식회사 하이닉스반도체 | Mask pattern for lens evaluation of exposure apparatus |
-
1995
- 1995-05-19 KR KR1019950012601A patent/KR960042221A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100437605B1 (en) * | 2001-09-05 | 2004-06-30 | 주식회사 하이닉스반도체 | Mask pattern for lens evaluation of exposure apparatus |
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Legal Events
Date | Code | Title | Description |
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WITN | Withdrawal due to no request for examination |