KR960042221A - How to check the lens efficiency ratio of semiconductor exposure equipment - Google Patents

How to check the lens efficiency ratio of semiconductor exposure equipment Download PDF

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Publication number
KR960042221A
KR960042221A KR1019950012601A KR19950012601A KR960042221A KR 960042221 A KR960042221 A KR 960042221A KR 1019950012601 A KR1019950012601 A KR 1019950012601A KR 19950012601 A KR19950012601 A KR 19950012601A KR 960042221 A KR960042221 A KR 960042221A
Authority
KR
South Korea
Prior art keywords
lens
ratio
efficiency ratio
pattern
efficiency
Prior art date
Application number
KR1019950012601A
Other languages
Korean (ko)
Inventor
조찬섭
안성환
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950012601A priority Critical patent/KR960042221A/en
Publication of KR960042221A publication Critical patent/KR960042221A/en

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Abstract

본 발명은 반도체 노광장비의 렌즈 효율비(lens efficiency rate) 체크(check) 방법에 관한 것으로서, 보다 구체적으로는 반도체 소자의 노광 공정시 렌즈의 효율에 따라 패턴의 균일도를 모니터링함으로써 렌즈의 현 상태를 파악할 수 있게 되어 보다 정확한 패턴의 형성이 가능하게 한 반도체 노광장비의 렌즈 효율비 체크방법에 관한 것으로서, 일정 비율로 가감되는 렌즈 효율비에 대응하는 위치에 크롬이 형성된 레티클에 빛을 조사하고, 그 투과된 빛이 프로젝션 렌즈에 의해 축소, 주사되어 패턴이 형성된 웨이퍼의 패턴 비율을 상기 크롬의 형성 비율과 비교하여 렌즈의 효율비를 체크함으로써 렌즈 효율비의 설정이 가능하고, 따라서 웨이퍼가 안치된 스테이지의 설치 높이의 범위 설정이 가능하며, 또한 렌즈의 이상 유무가 손쉽게 파악되어 렌즈의 보정 및 교환등의 조치를 용이하게 취할 수가 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for checking a lens efficiency rate of a semiconductor exposure apparatus, and more particularly, to monitor the current state of a lens by monitoring the uniformity of a pattern according to the efficiency of a lens during an exposure process of a semiconductor device. The present invention relates to a method for checking the lens efficiency ratio of a semiconductor exposure apparatus that enables the formation of a more accurate pattern, and irradiates light to a reticle in which chromium is formed at a position corresponding to the lens efficiency ratio that is added or subtracted at a constant ratio. It is possible to set the lens efficiency ratio by checking the efficiency ratio of the lens by comparing the pattern ratio of the wafer on which the transmitted light is reduced and scanned by the projection lens with the pattern formation ratio with the chromium formation ratio, and thus the stage where the wafer is placed It is possible to set the installation height of the range, and also easily determine whether the lens is abnormal Measures such as exchanges and can easily be taken.

Description

반도체 노광장비의 렌즈 효율비 체크방법How to check the lens efficiency ratio of semiconductor exposure equipment

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

첨부된 도면은 본 발명에 따른 레티클의 구성도.The accompanying drawings are schematic diagrams of a reticle according to the present invention.

Claims (2)

일정 비율로 가감되는 렌즈 효율비에 대응하는 위치에 크롬이 형성된 레티클에 빛을 조사하고, 그 투과된 빛이 프로젝션 렌즈에 의해 축소, 주사되어 패턴이 형성된 웨이퍼의 패턴 비율을 상기 크롬의 형성 비율과 비교하여 렌즈의 효율비를 체크하는 것을 특징으로 하는 반도체 노광장비의 렌즈 효율비 체크방법.Light is irradiated to a reticle in which chromium is formed at a position corresponding to a lens efficiency ratio that is added or subtracted at a predetermined ratio, and the transmitted light is reduced and scanned by the projection lens, so that the pattern ratio of the wafer on which the pattern is formed is determined by Lens efficiency ratio checking method for a semiconductor exposure equipment, characterized in that for checking the efficiency ratio of the lens in comparison. 제1항에 있어서, 상기 크롬은 직사각형 형상의 레티클의 외곽 가장자리를 따라서 형성되고, 각 모서리 부위 및 그 사이에도 소정의 형상으로 형성되는 것을 특징으로 하는 반도체 노광장비의 렌즈 효율비 체크방법.The method of claim 1, wherein the chromium is formed along an outer edge of the rectangular reticle and is formed in a predetermined shape between each corner portion and therebetween. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950012601A 1995-05-19 1995-05-19 How to check the lens efficiency ratio of semiconductor exposure equipment KR960042221A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950012601A KR960042221A (en) 1995-05-19 1995-05-19 How to check the lens efficiency ratio of semiconductor exposure equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950012601A KR960042221A (en) 1995-05-19 1995-05-19 How to check the lens efficiency ratio of semiconductor exposure equipment

Publications (1)

Publication Number Publication Date
KR960042221A true KR960042221A (en) 1996-12-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950012601A KR960042221A (en) 1995-05-19 1995-05-19 How to check the lens efficiency ratio of semiconductor exposure equipment

Country Status (1)

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KR (1) KR960042221A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100437605B1 (en) * 2001-09-05 2004-06-30 주식회사 하이닉스반도체 Mask pattern for lens evaluation of exposure apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100437605B1 (en) * 2001-09-05 2004-06-30 주식회사 하이닉스반도체 Mask pattern for lens evaluation of exposure apparatus

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