KR960042174A - Thin film transistor of liquid crystal display and manufacturing method - Google Patents
Thin film transistor of liquid crystal display and manufacturing method Download PDFInfo
- Publication number
- KR960042174A KR960042174A KR1019950012245A KR19950012245A KR960042174A KR 960042174 A KR960042174 A KR 960042174A KR 1019950012245 A KR1019950012245 A KR 1019950012245A KR 19950012245 A KR19950012245 A KR 19950012245A KR 960042174 A KR960042174 A KR 960042174A
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- KR
- South Korea
- Prior art keywords
- liquid crystal
- crystal display
- silicon layer
- thin film
- film transistor
- Prior art date
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- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
이 발명은 액정디스플레이의 박막트랜지스터에 있어서 하나의 화소에 대하여 두개의 트랜지스터를 병렬로 연결 장착하여 화소결함 발생시 리페어를 용이하게 할 수 있게 하는 액정디스플레이의 박막트랜지스터 및 그 제조방법에 관한 것으로서, 기판 위에 게이트전극이 형성되어 있고; 상기 게이트전극의 상부에 게이트산화막이 형성되어 있고; 상기 게이트산화막의 상부에 실리콘층이 형성되어 있고; 상기 실리콘층의 상부에 n+실리콘층이 형성되어 있고; 상기 n+실리콘층의 상부에 소오스전극 및 드레인전극이 형성되어 있고;상기 게이트산화막의 상부에 화소전극이 형성되어 있는 것으로 이루어져 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor of a liquid crystal display and a method of manufacturing the same, which facilitates repair when a pixel defect occurs by connecting two transistors in parallel in a thin film transistor of a liquid crystal display. A gate electrode is formed; A gate oxide film is formed on the gate electrode; A silicon layer is formed on the gate oxide film; An n + silicon layer is formed on top of the silicon layer; A source electrode and a drain electrode are formed on the n + silicon layer; and a pixel electrode is formed on the gate oxide film.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2도는 이 발명의 실시예에 따른 액정디스플레이의 박막트랜지스터의 구조를 나타낸 측단면도이고, 제3도는 이 발명의 실시예에 따른 액정디스플레이의 박막트랜지스터의 구조를 나타낸 평면도이고, 제4도는 이 발명의 실시에에 따른 액정디스플레이의 박막트랜지스터의 제조공정의 순서를 나타낸 측단면도이다.2 is a side cross-sectional view showing a structure of a thin film transistor of a liquid crystal display according to an embodiment of the present invention, and FIG. 3 is a plan view showing a structure of a thin film transistor of a liquid crystal display according to an embodiment of the present invention, and FIG. Fig. 1 is a side sectional view showing the procedure of the manufacturing process of the thin film transistor of the liquid crystal display according to the embodiment of the present invention.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950012245A KR960042174A (en) | 1995-05-17 | 1995-05-17 | Thin film transistor of liquid crystal display and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950012245A KR960042174A (en) | 1995-05-17 | 1995-05-17 | Thin film transistor of liquid crystal display and manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR960042174A true KR960042174A (en) | 1996-12-21 |
Family
ID=66525618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950012245A KR960042174A (en) | 1995-05-17 | 1995-05-17 | Thin film transistor of liquid crystal display and manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR960042174A (en) |
-
1995
- 1995-05-17 KR KR1019950012245A patent/KR960042174A/en not_active Application Discontinuation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Withdrawal due to no request for examination |