KR960042173A

KR960042173A - Method of manufacturing thin film transistor-liquid crystal display device

Info

Publication number: KR960042173A
Application number: KR1019950012107A
Authority: KR
Inventors: 이은영
Original assignee: 구자홍; Lg 전자 주식회사
Priority date: 1995-05-16
Filing date: 1995-05-16
Publication date: 1996-12-21

Abstract

본 발명은 TFT－LCD 제조방법에 관한 것으로, TFT－LCD의 배선층간 접속을 위한 콘택홀을 3층 레지스트 방법을 이용하여 형성함으로써, 상,하층 배선이 연결될 때 일어날 수 있는 단락 현상을 방지하기 위한 것이다.The present invention relates to a method for manufacturing a TFT-LCD, and to form a contact hole for connection between wiring layers of a TFT-LCD using a three-layer resist method, to prevent a short circuit that may occur when upper and lower wirings are connected. will be.

본 발명은 기판상에 활성층, 게이트절연막, 게이트전극을 차례로 형성하고, 상기 게이트전극 양단의 상기 활성층 부분에 소오스 및 드레인영역을 형성하는 단계와, 기판 전면에 층간 절연막을 형성하는 단계, 상기 층간절연막상에 제1포토레지스트층과 산화막 및 제2포토레지스트층을 차례로 형성하는 단계, 상기 제2포토레지스트층을 선택적으로 노광 및 현상하여 소정 패턴을 형성하는 단계, 상기 포토레지스트패턴을 마스크로 하여 상기 산화막을 식각하는 단계, 상기 산화막을 식각함에 따라 노출되는 제1포토레지스트층을 식각함과 동시에 상기 제2포토레지스트층을 제거하는 단계, 상기 층간절연막의 노출된 부분을 소정 두께 만큼 습식식각하는 단계, 건식식각에 의해 상기 층간절연막의 노출된 부분의 나머지를 식각하여 상기 드레인영역을 노출시키는 콘택홀을 형성함과 동시에 상기 산화막을 제거하는 단계, 및 상기 제1포토레지스트층을 제거하는 단계를 포함하는 박막트랜지스터－액정표시장치 제조방법을 제공한다.According to the present invention, an active layer, a gate insulating film, and a gate electrode are sequentially formed on a substrate, and a source and a drain region are formed on the active layer portions across the gate electrode, and an interlayer insulating film is formed on the entire surface of the substrate. Sequentially forming a first photoresist layer, an oxide film, and a second photoresist layer on a film, selectively exposing and developing the second photoresist layer to form a predetermined pattern, and using the photoresist pattern as a mask. Etching the oxide film, etching the first photoresist layer exposed by etching the oxide film, and removing the second photoresist layer, and wet etching the exposed portion of the interlayer insulating layer by a predetermined thickness. Etching the remainder of the exposed portion of the interlayer dielectric layer by dry etching to expose the drain region. Removing said oxide film a contact hole which is formed at the same time as, and a thin film transistor comprising the steps of removing the first photoresist layer to provide a process for producing the liquid crystal display method.

Description

Method of manufacturing thin film transistor-liquid crystal display device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 종래의 TFT－LCD 제조방법을 도시한 공정순서도, 제2도는 본 발명의 TFT－LCD 제조방법을 도시한 공정순서도.1 is a process flowchart showing a conventional TFT-LCD manufacturing method, and FIG. 2 is a process flowchart showing a TFT-LCD manufacturing method of the present invention.

Claims

Forming an active layer, a gate insulating film, and a gate electrode on the substrate in order, forming a source and a drain region in the active layer portion across the gate electrode, and forming an interlayer insulating film on the entire surface of the substrate; Forming a photoresist layer, an oxide film, and a second photoresist layer in order, selectively exposing and developing the second photoresist layer to form a predetermined pattern; etching the oxide film using the photoresist pattern as a mask And etching the first photoresist layer exposed by etching the oxide layer, and simultaneously removing the second photoresist layer, and wet etching the exposed portion of the interlayer insulating layer by a predetermined thickness. Etching the remainder of the exposed portion of the interlayer insulating film to expose the drain region. Forming a tack hole and simultaneously removing the oxide film; and removing the first photoresist layer.

※ Note: The disclosure is based on the initial application.