KR960035753A - Semiconductor Wafer Marking Method - Google Patents

Semiconductor Wafer Marking Method Download PDF

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Publication number
KR960035753A
KR960035753A KR1019950005736A KR19950005736A KR960035753A KR 960035753 A KR960035753 A KR 960035753A KR 1019950005736 A KR1019950005736 A KR 1019950005736A KR 19950005736 A KR19950005736 A KR 19950005736A KR 960035753 A KR960035753 A KR 960035753A
Authority
KR
South Korea
Prior art keywords
marking
wafer
semiconductor wafer
marking method
ion implantation
Prior art date
Application number
KR1019950005736A
Other languages
Korean (ko)
Inventor
이다순
Original Assignee
문정환
엘지반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 엘지반도체 주식회사 filed Critical 문정환
Priority to KR1019950005736A priority Critical patent/KR960035753A/en
Publication of KR960035753A publication Critical patent/KR960035753A/en

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Abstract

본 발명은 반도체 웨이퍼 마킹 방법에 관한 것으로, 이온 주입장치를 이용하여 이온주입될 웨이퍼의 전면에 마스크를 설치하여 웨이퍼상에 얄은 깊이로 이온을 주입시켜 이에의한 착색효과를 통하여 마킹을 구현하는 방법으로, 종래의 마킹 방법에서와 같이, 마킹 후, 마킹 부위가 벗겨지거나 지워지는 문제를 해결함으로써 마킹 형태가 영구적인 양질의 마킹을 얻을 수 있으며, 마킹시 기타 이물질이 발생되지 않도록 하여 종래 브러싱 등의 별도의 공정을 생략할 수 있어 생산성을 향상시킨 것을 특징으로 한다.The present invention relates to a method for marking a semiconductor wafer, by installing a mask on the front surface of the wafer to be ion-injected using an ion implantation device to implant ions at a deep depth on the wafer to implement marking through the coloring effect thereby. As a method, as in the conventional marking method, after marking, the marking part may be peeled off or erased, thereby obtaining a permanent, high quality marking, and preventing other foreign matters from occurring during the marking. The separate process can be omitted, characterized in that the productivity is improved.

Description

반도체 웨이퍼 마킹 방법.Semiconductor Wafer Marking Method.

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에서 이용되는 이온주입장치의 구조를 설명한 개략도.2 is a schematic diagram illustrating the structure of the ion implantation apparatus used in the present invention.

Claims (2)

반도체 웨이퍼 마킹 방법에 있어서, 반도체 제조 장치중 이온 주입 장치를 이용하여, 상기 이온 주입 장치의 스캔부와, 이온주입실부 사이에 원하는 문자나 문양을 투각 형성시킨 마스크판을 장착하여 저에너지의 이온을 웨이퍼상에 주입시킴으로써 웨이퍼에 마킹시키는 반도체 웨이퍼 마킹 방법.In the semiconductor wafer marking method, using a ion implantation apparatus in a semiconductor manufacturing apparatus, a mask plate having a desired letter or pattern is formed between the scanning portion of the ion implantation apparatus and the ion implantation chamber portion to wafers with low energy ions A semiconductor wafer marking method for marking a wafer by implanting in a phase. 제1항에 있어서, 상기 스캔부에 인가되는 전압을 미세조절하여 저에너지의 이온을 웨이퍼상에 주입시킴으로써 웨이퍼에 마킹시키는 반도체 웨이퍼 마킹 방법.The semiconductor wafer marking method of claim 1, wherein the voltage applied to the scan unit is finely regulated to implant ions of low energy onto the wafer to mark the wafer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950005736A 1995-03-20 1995-03-20 Semiconductor Wafer Marking Method KR960035753A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950005736A KR960035753A (en) 1995-03-20 1995-03-20 Semiconductor Wafer Marking Method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950005736A KR960035753A (en) 1995-03-20 1995-03-20 Semiconductor Wafer Marking Method

Publications (1)

Publication Number Publication Date
KR960035753A true KR960035753A (en) 1996-10-24

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ID=66549531

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950005736A KR960035753A (en) 1995-03-20 1995-03-20 Semiconductor Wafer Marking Method

Country Status (1)

Country Link
KR (1) KR960035753A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100773245B1 (en) * 2006-12-26 2007-11-05 동부일렉트로닉스 주식회사 Method for wafer marking

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100773245B1 (en) * 2006-12-26 2007-11-05 동부일렉트로닉스 주식회사 Method for wafer marking

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