KR960035638A - Drive Voltage Generator for Sense Amplifier - Google Patents

Drive Voltage Generator for Sense Amplifier Download PDF

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Publication number
KR960035638A
KR960035638A KR1019950006319A KR19950006319A KR960035638A KR 960035638 A KR960035638 A KR 960035638A KR 1019950006319 A KR1019950006319 A KR 1019950006319A KR 19950006319 A KR19950006319 A KR 19950006319A KR 960035638 A KR960035638 A KR 960035638A
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KR
South Korea
Prior art keywords
sense amplifier
signal
input
voltage generator
drive voltage
Prior art date
Application number
KR1019950006319A
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Korean (ko)
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KR0146171B1 (en
Inventor
신상호
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019950006319A priority Critical patent/KR0146171B1/en
Publication of KR960035638A publication Critical patent/KR960035638A/en
Application granted granted Critical
Publication of KR0146171B1 publication Critical patent/KR0146171B1/en

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/08—Control thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

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  • Dram (AREA)
  • Read Only Memory (AREA)

Abstract

본 발명은 반도체 기억소자의 감지 증폭기용 구동전압 발생ㄱ에 관한 것으로, 감지 증폭기가 비트라인에 실린 데이터를 센싱할 때 초기에 많은 전류를 필요로 하는 반면, 상기 감지 증폭기를 구동하는 구동전압을 발생하는 감지 증폭기 구동전압 발생기에서는 이를 따르지 못하여 구동전압의 레벨이 낮아져 센싱속도가 떨어지는 문제점이 생겼다. 따라서 이를 방지하기 위하여, 본 발명의 감지 증폭기 구동전압 발생기에서는 센싱 초기에 많은 전류를 필요로 하는 시간 동안에는 외부전압(VExt)으로 하여금 감지 증폭기를 구동하도록 함으로써, 감지 증폭기를 구동하는 구동전압 레벨을 안정시켜 센싱 속도를 향상시켰다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the generation of a driving voltage for a sense amplifier of a semiconductor memory device. While the sense amplifier initially requires a large current when sensing data loaded on a bit line, it generates a drive voltage for driving the sense amplifier. In the sense amplifier driving voltage generator which does not follow this, the level of the driving voltage is lowered, causing a problem in that the sensing speed is lowered. Therefore, in order to prevent this, the sense amplifier driving voltage generator of the present invention stabilizes the driving voltage level for driving the sense amplifier by causing the external voltage VExt to drive the sense amplifier during a time requiring a large amount of current at the beginning of sensing. To improve the sensing speed.

Description

감지 증폭기용 구동전압 발생기Drive Voltage Generator for Sense Amplifier

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제4도는 본 발명에 따른 실시예로서 감지 증폭기용 구동전압 발생기의 회로도.4 is a circuit diagram of a drive voltage generator for a sense amplifier as an embodiment according to the present invention.

Claims (5)

비트라인에 실린 데이터를 감지 ·증폭하는 감지 증폭기를 구동시키기 위한 구동전압 발생기에 있어서, 감지 증폭기 구동 인에이블 신호를 입력하는 입력단자와, 상기 입력단자로부터 입력된 입력신호를 일정시간 지연시키고, 이 지연된 펄스폭 만큼의 펄스 신호를 반전하여 출력하는 에지신호 발생수단과, 기준전압과 감지 증폭기 구동전위를 비교하여 차동 증폭한 신호를 제1 출력단자로 출력하기 위한 차동 증폭수단과, 상기 입력단자로부터의 입력신호에 의해 제어되어 외부전압을 상기 제1 출력단자로 공급해 주는 제1 스위치 수단과, 상기 에지신호 발생수단으로부터의 펄스 신호에 의해 제어되어 접지전압을 상기 제1 출력단자로 전달하는 제2 스위치 수단과, 상기 제1 출력단자로부터의 출력 신호에 의해 제어되어 외부전압을 제2 출력단자로 전달하는 제3 스위치 수단과, 상기 입력 단자로부터의 입력된 신호에 제어되어 상기 제2 출력단자로 전원전압을 공급해 주기 위한 제4 스위치 수단을 구비하는 것을 특징으로 하는 감지 증폭기용 구동전압 발생기.A drive voltage generator for driving a sense amplifier for sensing and amplifying data carried on a bit line, the drive voltage generator comprising: an input terminal for inputting a sense amplifier driving enable signal; a delay of an input signal input from the input terminal for a predetermined time; Edge signal generating means for inverting and outputting a pulse signal having a delayed pulse width, differential amplifying means for outputting a differentially amplified signal to a first output terminal by comparing a reference voltage and a sense amplifier driving potential with the input terminal; A first switch means controlled by an input signal of a second to supply an external voltage to the first output terminal, and a second switch means controlled by a pulse signal from the edge signal generating means to transmit a ground voltage to the first output terminal. Controlled by a switch means and an output signal from the first output terminal to transfer an external voltage to the second output terminal. The third switching means and the sense amplifier drive voltage generator for the control on the input signal from the input terminal, characterized in that it comprises a fourth switching means intended to supply a power supply voltage to the second output terminal. 제1항에 있어서, 상기 제1 내지 제4 스위치 수단이 MOS 트랜지스터로 구성된 것을 특징으로 하는 감지 증폭기용 구동전압 발생기.2. A drive voltage generator for a sense amplifier as set forth in claim 1, wherein said first to fourth switch means comprise MOS transistors. 제1항에 있어서, 상기 제1 스위치 수단은 PMOS 트랜지스터이고, 상기 제2 스위치 수단은 NMOS 트랜지스터이고, 상기 제3 스위치 수단은 PMOS 트랜지스터이고, 상기 제4 스위치 수단은 PMOS 트랜지스터인 것을 특징으로 하는 감지 증폭기용 구동전압 발생기.The sensing device according to claim 1, wherein the first switch means is a PMOS transistor, the second switch means is an NMOS transistor, the third switch means is a PMOS transistor, and the fourth switch means is a PMOS transistor. Drive voltage generator for amplifiers. 제1항에 있어서, 상기 예지신호 발생수단은 홀수개로 이루어진 지연체인으로 구성되고, 이 지연체인에 의해 지연된 펄스신호 만큼을 반전하여 출력하는 것을 특징으로 하는 감지 증폭기용 구동전압 발생기.2. The drive voltage generator for a sense amplifier according to claim 1, wherein the prediction signal generating means is composed of an odd number of delay chains, and inverts and outputs the pulse signal delayed by the delay chain. 지1항에 있어서, 상기 에지신호 발생수단은, 상기 입력라인에 직렬 접속된 3개의 인버터로 이루어진 지연라인과, 상기 지연라인에 의하여 지연된 입력신호와 상기 입력라인으로부터의 입력신호를 NAND 연산하는 NAND 게이트와 ,상기 NAND 게이트(G4)로부터의 출력된 신호를 반전시키는 인버터로 구성된 것을 특징으로 하는 감지 증폭기 구동전압 발생기.2. The NAND of claim 1, wherein the edge signal generating means comprises: a delay line consisting of three inverters connected in series with the input line, a NAND operation of the input signal delayed by the delay line, and an input signal from the input line. And a inverter configured to invert a signal output from the NAND gate (G4). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950006319A 1995-03-24 1995-03-24 Sense amplifier for an actuating voltage generator KR0146171B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950006319A KR0146171B1 (en) 1995-03-24 1995-03-24 Sense amplifier for an actuating voltage generator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950006319A KR0146171B1 (en) 1995-03-24 1995-03-24 Sense amplifier for an actuating voltage generator

Publications (2)

Publication Number Publication Date
KR960035638A true KR960035638A (en) 1996-10-24
KR0146171B1 KR0146171B1 (en) 1998-11-02

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100422820B1 (en) * 1997-06-30 2004-05-24 주식회사 하이닉스반도체 Sense amplifier of semiconductor memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100422820B1 (en) * 1997-06-30 2004-05-24 주식회사 하이닉스반도체 Sense amplifier of semiconductor memory device

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Publication number Publication date
KR0146171B1 (en) 1998-11-02

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