KR960032480A - Internal power supply voltage generation circuit - Google Patents

Internal power supply voltage generation circuit Download PDF

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Publication number
KR960032480A
KR960032480A KR1019950003572A KR19950003572A KR960032480A KR 960032480 A KR960032480 A KR 960032480A KR 1019950003572 A KR1019950003572 A KR 1019950003572A KR 19950003572 A KR19950003572 A KR 19950003572A KR 960032480 A KR960032480 A KR 960032480A
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KR
South Korea
Prior art keywords
power supply
supply voltage
internal power
internal
circuit
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Application number
KR1019950003572A
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Korean (ko)
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KR0142958B1 (en
Inventor
박필순
강경우
석용식
최훈
Original Assignee
김광호
삼성전자 주식회사
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950003572A priority Critical patent/KR0142958B1/en
Publication of KR960032480A publication Critical patent/KR960032480A/en
Application granted granted Critical
Publication of KR0142958B1 publication Critical patent/KR0142958B1/en

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies

Abstract

1. 청구범위에 기재된 발명이 속하는 기술분야1. TECHNICAL FIELD OF THE INVENTION

본 발명은 내부회로로 일전전압의 내부전원전압을 공급하는 내부전원전압 발생회로에 관한 것이다.The present invention relates to an internal power supply voltage generation circuit for supplying the internal power supply voltage of the previous voltage to the internal circuit.

2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention

종래에는 내부회로중 대전류를 소비하는 내부회로동작시 내부전원전압의 딥이 발생되고 이를 보정해주기 위한 내부전원전압 발생회로의 동작이 수행되는데 상기 보정동작이 느려 고속동작하는 반도체 메모리장치에 부적합하였다. 특히 비활성화시 대전류가 소비되는 내부회로의 동작으로 인한 회복시간은 심각하였다.Conventionally, an internal power supply voltage dip is generated during an internal circuit operation that consumes a large current among the internal circuits, and an operation of an internal power supply voltage generation circuit for correcting the same is slow, which is unsuitable for a high speed semiconductor memory device. In particular, the recovery time was severe due to the operation of the internal circuit, which consumes a large current when deactivated.

3. 발명의 해결방법의 요지.3. Summary of the Solution of the Invention.

내부전원전압 발생회로를 구성하는 차동증폭기의 방전능력을 증가시키는 전류패스수단을 첨가하여 대전류소비상태를 감지하는 감지회로의 출력을 즉각적으로 입력하여 방전능력을 향상시키므로서 상기 내부전원전압의 딥에 의한 전압강하보정시간을 줄일 수 있게 되었다.By adding a current path means for increasing the discharge capacity of the differential amplifier constituting the internal power supply voltage generation circuit, the output of the sensing circuit for detecting a large current consumption condition is immediately input to improve the discharge capacity, thereby improving the dip of the internal power supply voltage. The voltage drop compensation time can be reduced.

4. 발명의 중요한 용도.4. Important uses of the invention.

가변적인 내부전원전압레벨을 신속히 보정하므로서 고속동작하는 반도체 메모리의 처리속도를 향상시키게 되었다.By quickly compensating for the variable internal power supply voltage level, the processing speed of a high-speed semiconductor memory is improved.

Description

내부전원전압 발생회로Internal power supply voltage generation circuit

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명의 일실시예를 보여주는 내부전원전압 발생회로의 회로도,3 is a circuit diagram of an internal power supply voltage generation circuit showing an embodiment of the present invention;

제4도는 제3도에서 출력되는 내부전원전압의 파형도,4 is a waveform diagram of an internal power supply voltage output from FIG.

제5도는 본 발명의 다른 실시예를 보여주는 내부전원전압 발생회로의 회로도,5 is a circuit diagram of an internal power supply voltage generation circuit showing another embodiment of the present invention;

제6도는 제5도에서 출력되는 내부전원전압의 파형도.6 is a waveform diagram of an internal power supply voltage output from FIG.

Claims (4)

반도체 메모리의 내부회로에 일정한 내부전원전압을 공급하는 내부전원전압 발생회로에 있어서, 외부전원전압과 접지전압단 사이에 형성되고 제1 및 제2입력에 응답하여 제어신호를 출력하는 차동증폭기와, 상기 차동증폭기의 제어신호를 입력하여 출력라인으로 공급되는 전압의 양을 제어하는 제어 트랜지스터와, 비활성화상태에서 내부회로에 대전류가 소비될 때 상기 대전류소비상태를 감지하는 감지회로의 출력에 응답하여 제2제어신호를 출력하는 논리게이트와, 상기 차동증폭기를 구성하는 방전수단과 병렬접속되고 상기 논리게이트의 제2제어신호에 응답하여 상기 차동증폭기의 방전능력을 높여주는 전류패스수단을 구비함을 특징으로 하는 내부전워전압 발생회로.An internal power supply voltage generation circuit for supplying a constant internal power supply voltage to an internal circuit of a semiconductor memory, comprising: a differential amplifier formed between an external power supply voltage and a ground voltage terminal and outputting a control signal in response to first and second inputs; A control transistor for controlling the amount of voltage supplied to the output line by inputting a control signal of the differential amplifier; and in response to an output of a sensing circuit detecting the large current consumption state when a large current is consumed in an internal circuit in an inactive state. A logic gate for outputting a control signal, and a current pass means connected in parallel with the discharging means constituting the differential amplifier and increasing the discharge capacity of the differential amplifier in response to a second control signal of the logic gate. Internal voltage generator circuit. 제1항에 있어서, 상기 논리게이트가 복수개의 대전류소비회로중 하나의 회로동작시에도 상기 제2제어신호를 출력하게 하는 오아게이트로 구성됨을 특징으로 하는 내부전원전압 발생회로.The internal power supply voltage generation circuit according to claim 1, wherein the logic gate is configured by an orifice which outputs the second control signal even when one of a plurality of large current consumption circuits operates. 제1항에 있어서, 상기 전류패스수단이 엔모오스 트랜지스터로 구성됨을 특징으로 하는 내부전원전압 발생회로.The internal power supply voltage generation circuit according to claim 1, wherein said current path means comprises an enMOS transistor. 반도체 메모리장치의 내부회로의 소정레벨의 내부전원전압을 공급하기 위한 내부전원전압 발생회로에 있어서, 외부전원전압과 접지전압단 사이에 형성되고 제1 및 제2입력에 응답하여 제어신호를 출력하는 차동증폭기와, 상기 차동증폭기의 제어신호를 입력하여 출력라인으로 공급되는 전압의 양을 제어하는 제어 트랜지스터와, 상기 차동증폭기를 구성하는 방전수단과 병렬접속되고 대전류소비회로의 동작을 감지하는 복수개의 감지 회로들의 출력에 응답하여 개별적으로 도통유무가 결정되는 복수개의 전류패스수단을 구비함을 특징으로 하는 내부전원전압 발생회로.An internal power supply voltage generation circuit for supplying an internal power supply voltage of a predetermined level of an internal circuit of a semiconductor memory device, the internal power supply voltage generator being formed between an external power supply voltage and a ground voltage terminal and outputting a control signal in response to first and second inputs. A plurality of differential amplifiers, a control transistor for inputting a control signal of the differential amplifier to control the amount of voltage supplied to an output line, and a plurality of parallel circuits connected to the discharging means constituting the differential amplifier to sense operation of a large current consumption circuit. And a plurality of current path means for individually determining the conduction in response to the output of the sensing circuits. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950003572A 1995-02-23 1995-02-23 Internal source voltage generator circuit KR0142958B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950003572A KR0142958B1 (en) 1995-02-23 1995-02-23 Internal source voltage generator circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950003572A KR0142958B1 (en) 1995-02-23 1995-02-23 Internal source voltage generator circuit

Publications (2)

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KR960032480A true KR960032480A (en) 1996-09-17
KR0142958B1 KR0142958B1 (en) 1998-08-17

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KR101094383B1 (en) 2009-12-14 2011-12-15 주식회사 하이닉스반도체 Internal voltage generator

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