KR960030407A - Capacitor of semiconductor memory device and manufacturing method thereof - Google Patents
Capacitor of semiconductor memory device and manufacturing method thereof Download PDFInfo
- Publication number
- KR960030407A KR960030407A KR1019950001779A KR19950001779A KR960030407A KR 960030407 A KR960030407 A KR 960030407A KR 1019950001779 A KR1019950001779 A KR 1019950001779A KR 19950001779 A KR19950001779 A KR 19950001779A KR 960030407 A KR960030407 A KR 960030407A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- hsg
- etch stop
- spacer
- forming
- Prior art date
Links
Landscapes
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
반구상그레인을 실리콘층 위에 형성하여 고용량의 캐패시터를 제조하는 방법, 특히 스토리지전극 형성을 위한 식각시에 실린더상단에 형성된 반구상그레인실리콘(HSG-Si)층이 손상을 입는 것을 방지하고 실린더 바닥에 형성된 HSG-Si층을 잔존시켜 고용량의 캐패시터를 얻는 방법을 개시한다.Forming a hemispherical grain on the silicon layer to produce a high capacity capacitor, in particular to prevent damage to the hemispherical grain silicon (HSG-Si) layer formed on the top of the cylinder during etching to form the storage electrode A method of obtaining a high capacity capacitor by remaining the formed HSG-Si layer is disclosed.
이를 위해 제거되어야 할 HSG-Si층은 도핑되지 않는 절연층 위에 형성시키고 잔존해야 할 HSG-Si층은 도핑된 다결정실리콘층 위에 형성시킨다. 본 발명의 실시예에서는 스토리지전극의 다결정실리콘층은 도핑된 상태이고 식각중지층은 도핑되지 않게 하여 각각에 형성된 HSG-Si층의 식각율이 다르게 하여 HSG-Si층을 선택적으로 식각한다.For this purpose, the HSG-Si layer to be removed is formed over the undoped insulating layer and the HSG-Si layer to be remaining is formed over the doped polysilicon layer. In an embodiment of the present invention, the polycrystalline silicon layer of the storage electrode is doped and the etch stop layer is not doped so that the etching rate of the HSG-Si layer formed on each is different, thereby selectively etching the HSG-Si layer.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2A도 내지 제2I도는 본 발명의 일실시예에 따른 캐패시터의 제조방법을 나타내는 단면도이다.2A to 2I are cross-sectional views showing a method of manufacturing a capacitor according to an embodiment of the present invention.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950001779A KR960030407A (en) | 1995-01-28 | 1995-01-28 | Capacitor of semiconductor memory device and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950001779A KR960030407A (en) | 1995-01-28 | 1995-01-28 | Capacitor of semiconductor memory device and manufacturing method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960030407A true KR960030407A (en) | 1996-08-17 |
Family
ID=66531341
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950001779A KR960030407A (en) | 1995-01-28 | 1995-01-28 | Capacitor of semiconductor memory device and manufacturing method thereof |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960030407A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100533363B1 (en) * | 2000-05-24 | 2005-12-06 | 주식회사 하이닉스반도체 | Forming method for storage node of semiconductor device |
KR100540257B1 (en) * | 1998-12-29 | 2006-05-03 | 주식회사 하이닉스반도체 | Method for forming charge storage electrode of semiconductor device |
-
1995
- 1995-01-28 KR KR1019950001779A patent/KR960030407A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100540257B1 (en) * | 1998-12-29 | 2006-05-03 | 주식회사 하이닉스반도체 | Method for forming charge storage electrode of semiconductor device |
KR100533363B1 (en) * | 2000-05-24 | 2005-12-06 | 주식회사 하이닉스반도체 | Forming method for storage node of semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5716883A (en) | Method of making increased surface area, storage node electrode, with narrow spaces between polysilicon columns | |
US5284787A (en) | Method of making a semiconductor memory device having improved electrical characteristics | |
US6037220A (en) | Method of increasing the surface area of a DRAM capacitor structure via the use of hemispherical grained polysilicon | |
JP3640763B2 (en) | Manufacturing method of capacitor of semiconductor memory device | |
JPH06188381A (en) | Capacitor of dram cell and its preparation | |
KR940003021A (en) | Semiconductor Memory and Manufacturing Method | |
KR19990073712A (en) | Semiconductor memory device provided with COB and manufacturing method thereof | |
US5536673A (en) | Method for making dynamic random access memory (DRAM) cells having large capacitor electrode plates for increased capacitance | |
US5770510A (en) | Method for manufacturing a capacitor using non-conformal dielectric | |
US6597033B1 (en) | Semiconductor memory device and manufacturing method thereof | |
KR960030407A (en) | Capacitor of semiconductor memory device and manufacturing method thereof | |
US5756388A (en) | Method for fabricating a rake-shaped capacitor | |
US6060367A (en) | Method of forming capacitors | |
US6596577B2 (en) | Semiconductor processing methods of forming dynamic random access memory (DRAM) circuitry | |
KR100356814B1 (en) | Method of fabricating a capacitor in semiconductor device | |
US5973350A (en) | Stacked capacitor structure for high density DRAM cells | |
KR0168343B1 (en) | Storage electrode fabrication method having hemispherical grain | |
KR0183883B1 (en) | Contact forming method of semiconductor device | |
KR0168335B1 (en) | Semiconductor device & its fabrication method | |
KR100546112B1 (en) | Manufacturing method of semiconductor device | |
KR100213211B1 (en) | Manufacturing method of large scale integrated memory devices | |
KR100618693B1 (en) | method for fabricating storage node electrode of capacitor | |
KR100255658B1 (en) | Manufacture method of storage electron pole having hsg silicon | |
KR0136529B1 (en) | The fabrication method for semiconductor memory device | |
KR0165382B1 (en) | Capacitor fabrication method of semiconductor memory device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
WITB | Written withdrawal of application |