KR960026936A - Transistor manufacturing method of semiconductor device - Google Patents
Transistor manufacturing method of semiconductor device Download PDFInfo
- Publication number
- KR960026936A KR960026936A KR1019940039475A KR19940039475A KR960026936A KR 960026936 A KR960026936 A KR 960026936A KR 1019940039475 A KR1019940039475 A KR 1019940039475A KR 19940039475 A KR19940039475 A KR 19940039475A KR 960026936 A KR960026936 A KR 960026936A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- manufacturing
- gate electrode
- layer
- amorphous silicon
- Prior art date
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
본 발명은 반도체소자의 트랜지스터 제조방법에 관한 것으로서, 게이트 전극용 폴리실리콘 형성시 불순물인 인(Phosphorus)의 도핑(Doping) 정도를 조절하여 도핑하고, 도핑정도에 따른 폴릴실리콘층의 습식식각비 차이를 이용하여 경사진 게이트 전극을 형성한 후 달라진 폴리실리콘의 두께에 따라 LDD(Lightly doped drain) 구조를 갖는 소오스 및 드레인 영역이 형성되도록 하므로써 반도체 소자의 제조공정이 간소화되고, 넓어진 게이트 면적으로 인해 소자의 동작속도가 증가되도록 한 반도체 소자의 트랜지스터 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a transistor of a semiconductor device, wherein the doping of phosphorus (Phosphorus), which is an impurity, is formed when polysilicon is formed for a gate electrode, and the difference in wet etching ratio of the polysilicon layer according to the degree of doping The process of manufacturing a semiconductor device is simplified by forming a source and drain region having a lightly doped drain (LDD) structure according to the changed thickness of polysilicon after forming the inclined gate electrode using It relates to a method for manufacturing a transistor of a semiconductor device to increase the operating speed of.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940039475A KR960026936A (en) | 1994-12-30 | 1994-12-30 | Transistor manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940039475A KR960026936A (en) | 1994-12-30 | 1994-12-30 | Transistor manufacturing method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960026936A true KR960026936A (en) | 1996-07-22 |
Family
ID=66647871
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940039475A KR960026936A (en) | 1994-12-30 | 1994-12-30 | Transistor manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960026936A (en) |
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1994
- 1994-12-30 KR KR1019940039475A patent/KR960026936A/en not_active Application Discontinuation
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