KR960026936A - Transistor manufacturing method of semiconductor device - Google Patents

Transistor manufacturing method of semiconductor device Download PDF

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Publication number
KR960026936A
KR960026936A KR1019940039475A KR19940039475A KR960026936A KR 960026936 A KR960026936 A KR 960026936A KR 1019940039475 A KR1019940039475 A KR 1019940039475A KR 19940039475 A KR19940039475 A KR 19940039475A KR 960026936 A KR960026936 A KR 960026936A
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KR
South Korea
Prior art keywords
semiconductor device
manufacturing
gate electrode
layer
amorphous silicon
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KR1019940039475A
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Korean (ko)
Inventor
주문식
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019940039475A priority Critical patent/KR960026936A/en
Publication of KR960026936A publication Critical patent/KR960026936A/en

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Abstract

본 발명은 반도체소자의 트랜지스터 제조방법에 관한 것으로서, 게이트 전극용 폴리실리콘 형성시 불순물인 인(Phosphorus)의 도핑(Doping) 정도를 조절하여 도핑하고, 도핑정도에 따른 폴릴실리콘층의 습식식각비 차이를 이용하여 경사진 게이트 전극을 형성한 후 달라진 폴리실리콘의 두께에 따라 LDD(Lightly doped drain) 구조를 갖는 소오스 및 드레인 영역이 형성되도록 하므로써 반도체 소자의 제조공정이 간소화되고, 넓어진 게이트 면적으로 인해 소자의 동작속도가 증가되도록 한 반도체 소자의 트랜지스터 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a transistor of a semiconductor device, wherein the doping of phosphorus (Phosphorus), which is an impurity, is formed when polysilicon is formed for a gate electrode, and the difference in wet etching ratio of the polysilicon layer according to the degree of doping The process of manufacturing a semiconductor device is simplified by forming a source and drain region having a lightly doped drain (LDD) structure according to the changed thickness of polysilicon after forming the inclined gate electrode using It relates to a method for manufacturing a transistor of a semiconductor device to increase the operating speed of.

Description

반도체 소자의 트랜지스터 제조방법Transistor manufacturing method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (3)

반도체 소자의 트랜지스터 제조방법에 있어서, 필드산화막이 형성된 실리콘 기판상에 게이트 산화막 및 인성분으로 도포된 비정질 실시콘층을 순차로 형성시키는 단계와, 상기 비정질 실리콘층을 패턴화하는 단계와, 상기 패턴화된 비정질 실리콘층을 열처리하여 언도프 폴리실리콘층 및 도프 폴리실리콘층으로 변화시키는 단계와, 상기 언도프 및 도프 폴리실리콘층을 식각하여 상부 경사면으로 갖는 게이트 전극을 형성하는 단계와, 불순물 이온주입공정을 실시하여 실리콘 기판상에 저농도 및 고농도 불순물 영역을 형성하는 단계와, 상기 게이트 전극을 열처리하여 인성분이 골고루 분포된 폴리실리콘층으로 이루어진 게이트 전극을 완성하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 트랜지스터 제조방법.A method of manufacturing a transistor of a semiconductor device, the method comprising: sequentially forming an amorphous embodiment cone layer coated with a gate oxide film and a phosphorus component on a silicon substrate on which a field oxide film is formed, patterning the amorphous silicon layer, and patterning the patterned amorphous silicon layer; Heat treating the amorphous silicon layer to form an undoped polysilicon layer and a dope polysilicon layer, etching the undoped and dope polysilicon layers to form a gate electrode having an upper slope, and impurity ion implantation process Forming a low concentration and a high concentration of impurity regions on a silicon substrate, and heat treating the gate electrode to complete a gate electrode made of a polysilicon layer evenly distributed with phosphorus components. Manufacturing method. 제1항에 있어서, 상기 비정질 실리콘층은 600℃ 이하에서 비정질 상태로 형성되는 것을 특징으로 하는 반도체 소자의 트랜지스터 제조방법.The method of claim 1, wherein the amorphous silicon layer is formed in an amorphous state at 600 ° C. or less. 제1항에 있어서, 상기 언도프 및 도프 폴리실리콘층의 식각공정시 HNO3:CH3COOH:HF:H2O=21:3:0.25~1.0:15~16 조성비로된 식각용액이 사용되는 것을 특징으로 하는 반도체 소자의 트랜지스터 제조방법.According to claim 1, wherein the etch solution of the undoped and dope polysilicon layer HNO 3 : CH 3 COOH: HF: H 2 O = 21: 3: 0.25 ~ 1.0: 15 ~ 16 composition ratio is used A transistor manufacturing method of a semiconductor device, characterized in that. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940039475A 1994-12-30 1994-12-30 Transistor manufacturing method of semiconductor device KR960026936A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940039475A KR960026936A (en) 1994-12-30 1994-12-30 Transistor manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940039475A KR960026936A (en) 1994-12-30 1994-12-30 Transistor manufacturing method of semiconductor device

Publications (1)

Publication Number Publication Date
KR960026936A true KR960026936A (en) 1996-07-22

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Application Number Title Priority Date Filing Date
KR1019940039475A KR960026936A (en) 1994-12-30 1994-12-30 Transistor manufacturing method of semiconductor device

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KR (1) KR960026936A (en)

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