KR960026421A - Manufacturing method of self-aligned heterojunction bipolar transistor - Google Patents

Manufacturing method of self-aligned heterojunction bipolar transistor Download PDF

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Publication number
KR960026421A
KR960026421A KR1019940036377A KR19940036377A KR960026421A KR 960026421 A KR960026421 A KR 960026421A KR 1019940036377 A KR1019940036377 A KR 1019940036377A KR 19940036377 A KR19940036377 A KR 19940036377A KR 960026421 A KR960026421 A KR 960026421A
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KR
South Korea
Prior art keywords
emitter
bipolar transistor
film
base
self
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KR1019940036377A
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Korean (ko)
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KR0148036B1 (en
Inventor
박성호
양전욱
Original Assignee
양승택
재단법인 한국전자통신연구소
조백제
한국전기통신공사
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Priority to KR1019940036377A priority Critical patent/KR0148036B1/en
Publication of KR960026421A publication Critical patent/KR960026421A/en
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Publication of KR0148036B1 publication Critical patent/KR0148036B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H01L29/66318—Heterojunction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

Abstract

본 발명에서는 화합물 반도체를 이용한 이종접합 바이폴라 트랜지스터의 제조시에 베이스-컬렉터 용량을 줄임으로써 최대 공진주파수를 향상시키기 위해 기존에 사용되던 이오주입시의 문제를 완화시킬 목적으로 에미터 영역 주위를 폴리이미드를 비롯한 이중의 측벽막에 의해 보호함으로써 베이스 오믹접촉 특성과 누설전류 발생을 개신시키며, 아울러 고속특성의 향상을 위해 에미터와 베이스의 자기정렬이 가능하도록 고안하였다.In the present invention, the polyimide around the emitter region for the purpose of alleviating the problem of the conventional ion implantation to improve the maximum resonance frequency by reducing the base-collector capacity in the production of heterojunction bipolar transistor using a compound semiconductor. It protects the base ohmic contact characteristics and leakage current by protecting it with a double sidewall film, and it is designed to enable self-alignment of emitter and base to improve high speed characteristics.

Description

자기정렬된 이종접합 바이폴라 트랜지스터의 제조방법Manufacturing method of self-aligned heterojunction bipolar transistor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도의 (A)∼(F)는 본 발명의 제조공정을 나타낸 단면도.(A)-(F) is sectional drawing which showed the manufacturing process of this invention.

Claims (3)

화합물 반도체를 이용한 이종접합 구조의 바이폴라 트랜지스터의 제조방법에 있어서, 에미터와 베이스 전극간의 자기정렬이 가능하면서 베이스 오믹저항이 약화되지 않고, 또한 누설전류의 발생이 저감되도록 고안한 것을 특징으로 하는 이종접합 바이폴라 트랜지스터의 제조방법.A method for manufacturing a bipolar transistor having a heterojunction structure using a compound semiconductor, wherein the self-alignment between the emitter and the base electrode is possible, the base ohmic resistance is not weakened, and the generation of leakage current is reduced. Method of manufacturing a junction bipolar transistor. 제1항에 있어서, 실리콘 질화막이나 실리콘 산화막 같은 유전체 절연막을 에미터 전극을 중심으로 한 웨이퍼의 전면에 증착하고, 이방성이 큰 건식식각 방법에 의해 식각함으로써 에미터를 둘러싸는 1차 측벽막을 형성하여 이후 베이스 전극의 에미터에 대한 자기정렬이 가능하도록 한 것을 특징으로 하는 이종접합 바이폴라 트랜지스터의 제조방법.The method according to claim 1, wherein a dielectric insulating film, such as a silicon nitride film or a silicon oxide film, is deposited on the entire surface of the wafer centered on the emitter electrode and etched by a dry etching method having a large anisotropy to form a primary sidewall film surrounding the emitter. Since the self-alignment with respect to the emitter of the base electrode it is possible to manufacture a heterojunction bipolar transistor. 제1항에 또는 제2항에 있어서, 에미터 전극과 1차 측벽막을 중심으로 폴리이미드 유전체막을 기판 전면에 도포하고, 이온밀링 등 수직 지향성이 큰 식각방법에 의해 기판 표면까지 식각함으로써 폴리이미드에 의한 2차 측벽막을 에이터 전극과 1차 측벽막 둘레에 형성하여, 이후 이온주입후의 베이스 전극이 형성될 부분을 손상되지 않도록 한 것을 특징으로 하는 이종접합 바이폴라 트랜지스터의 제조방법.The polyimide according to claim 1 or 2, wherein a polyimide dielectric film is applied to the entire surface of the substrate around the emitter electrode and the primary sidewall film and etched to the surface of the substrate by an etching method having a high vertical directivity such as ion milling. And forming a secondary sidewall film around the emitter electrode and the primary sidewall film so that the portion where the base electrode after ion implantation is to be formed is not damaged. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940036377A 1994-12-23 1994-12-23 Method for manufacturing bipolar transistor KR0148036B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940036377A KR0148036B1 (en) 1994-12-23 1994-12-23 Method for manufacturing bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940036377A KR0148036B1 (en) 1994-12-23 1994-12-23 Method for manufacturing bipolar transistor

Publications (2)

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KR960026421A true KR960026421A (en) 1996-07-22
KR0148036B1 KR0148036B1 (en) 1998-11-02

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020031722A (en) * 2000-10-23 2002-05-03 김우진 Structure and method for heterojunction bipola transistor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100491089B1 (en) * 2002-12-06 2005-05-24 한국전자통신연구원 Heterojunction bipolar transistor and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020031722A (en) * 2000-10-23 2002-05-03 김우진 Structure and method for heterojunction bipola transistor

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