KR960026172A - Semiconductor device manufacturing method - Google Patents

Semiconductor device manufacturing method Download PDF

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Publication number
KR960026172A
KR960026172A KR1019940035730A KR19940035730A KR960026172A KR 960026172 A KR960026172 A KR 960026172A KR 1019940035730 A KR1019940035730 A KR 1019940035730A KR 19940035730 A KR19940035730 A KR 19940035730A KR 960026172 A KR960026172 A KR 960026172A
Authority
KR
South Korea
Prior art keywords
forming
charge storage
storage electrode
semiconductor substrate
junction layer
Prior art date
Application number
KR1019940035730A
Other languages
Korean (ko)
Inventor
엄금용
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940035730A priority Critical patent/KR960026172A/en
Publication of KR960026172A publication Critical patent/KR960026172A/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)

Abstract

본 발명은 소자가 형성될 예정된 지역의 반도체 기판을 전체두께중 일정두께 식각하는 단계; 상기 반도체 기판이 식각된 부위에 접합층을 구비하는 통상적인 트랜지스터 구조를 형성하는 단계; 전체구조 상부에 층간절연막을 형성하는 단계; 상기 트랜지스터의 접합층에 전하저장전극을 콘택시키는 단계를 포함하는 것을 특징으로 하는 반도체 소자 제조 방법에 관한 것으로, 기판의 타포로지를 심화시키지 않는 상태에서 전하저장전극의 표면적을 크게함으로써 공정의 용이함을 가져오고 고집적 소자의 셀당 필요한 캐패시터 용량을 확보하여 소자의 특성을 향상시키는 효과를 가져온다.The present invention comprises the steps of etching the semiconductor substrate of the region where the device is to be formed a certain thickness of the total thickness; Forming a conventional transistor structure having a junction layer on a portion where the semiconductor substrate is etched; Forming an interlayer insulating film on the entire structure; A method of manufacturing a semiconductor device comprising contacting a charge storage electrode with a junction layer of the transistor, wherein the process area is increased by increasing the surface area of the charge storage electrode without deepening the substrate. Importing and securing the required capacitor capacity per cell of the high-density device has the effect of improving the characteristics of the device.

Description

반도체 소자 제조 방법Semiconductor device manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1A도 내지 제1C도는 본 발명의 일실시예에 따른 전하저장전극 형성 공정 단면도.1A to 1C are cross-sectional views of a charge storage electrode forming process according to an embodiment of the present invention.

Claims (2)

반도체 소자 제조 방법에 있어서; 소자가 형성될 예정된 지역의 반도체 기판을 전체두께중 일정두께 식각 하는 단계; 상기 반도체 기판이 식각된 부위에 접합층을 구비하는 통상적인 트랜지스터 구조를 형성하는 단계; 전체구조 상부에 층간절연막을 형성하는 단계; 상기 트랜지스터의 접합층에 전하저장전극을 콘택시키는 단계를 포함하는 것을 특징으로 하는 반도체 소자 제조 방법.A semiconductor device manufacturing method; Etching a predetermined thickness of the semiconductor substrate in the region where the device is to be formed; Forming a conventional transistor structure having a junction layer on a portion where the semiconductor substrate is etched; Forming an interlayer insulating film on the entire structure; And contacting the charge storage electrode with the junction layer of the transistor. 제1항에 있어서, 상기 전하저장전극은 비도핑된 비정질실리콘 및 도핑된 비정질실리콘막을 순차적으로 다수번 반복하여 형성한 후 열처리하여 형성하는 것을 특징으로 하는 반도체 소자 제조 방법.2. The method of claim 1, wherein the charge storage electrode is formed by repeatedly forming a plurality of undoped amorphous silicon and a doped amorphous silicon film in sequence and heat treatment. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940035730A 1994-12-21 1994-12-21 Semiconductor device manufacturing method KR960026172A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940035730A KR960026172A (en) 1994-12-21 1994-12-21 Semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940035730A KR960026172A (en) 1994-12-21 1994-12-21 Semiconductor device manufacturing method

Publications (1)

Publication Number Publication Date
KR960026172A true KR960026172A (en) 1996-07-22

Family

ID=66688754

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940035730A KR960026172A (en) 1994-12-21 1994-12-21 Semiconductor device manufacturing method

Country Status (1)

Country Link
KR (1) KR960026172A (en)

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