KR960026134A - Thermal stabilization of gallium arsenide semiconductor and ruthenium oxide contact barrier - Google Patents

Thermal stabilization of gallium arsenide semiconductor and ruthenium oxide contact barrier Download PDF

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Publication number
KR960026134A
KR960026134A KR1019940033313A KR19940033313A KR960026134A KR 960026134 A KR960026134 A KR 960026134A KR 1019940033313 A KR1019940033313 A KR 1019940033313A KR 19940033313 A KR19940033313 A KR 19940033313A KR 960026134 A KR960026134 A KR 960026134A
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South Korea
Prior art keywords
gallium arsenide
semiconductor
ruthenium oxide
contact
barrier
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KR1019940033313A
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Korean (ko)
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KR0162863B1 (en
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민석기
김은규
박용주
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김은영
한국과학기술연구원
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Priority to KR1019940033313A priority Critical patent/KR0162863B1/en
Publication of KR960026134A publication Critical patent/KR960026134A/en
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Publication of KR0162863B1 publication Critical patent/KR0162863B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02192—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

본 발명은 열적으로 안정된 반도체소자용 게이금속(gate metal) 및 금속배선 제작을 위해 반도체와 금속사이의 접촉베리어(contact barrier)에 대한 열적안정성을 향상시키는 방법에 관한 것으로, 특히 갈륨비소반도체 위에 쇼트키장벽을 형성하고 열처리 수행시 300℃정도의 낮은 온도에서도 금속과 반도체 사이의 반응에 의한 접합장벽의 열화현상을 지연시켜줌으로써 열적안정성을 실현하려는 데 그 목적이 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for improving thermal stability of a contact barrier between a semiconductor and a metal for manufacturing a gate metal and a metal wiring for a thermally stable semiconductor device. The purpose of the present invention is to realize thermal stability by forming a key barrier and delaying deterioration of the junction barrier caused by the reaction between the metal and the semiconductor even at a low temperature of about 300 ° C.

따라서, 본 발명 갈륨비소반도체와 산화루테늄 접촉베리어의 열적안정화방법은 갈륨비소반도체의 쇼트키접촉용 금속으로 비저항이 작고 안정된 산화물인 산화루테늄의 접촉안정성을 높이기 위하여 갈륨비소반도체의 표면에 수소화를 실시함으로써, 반도체 표면에 존재할 수 있는 결함 및 불순물들의 전기적 이온상태를 중성화시켜 접촉베리어에 영향을 미치는 계면고정효과(interface pinning effect)를 방지할 수 있고, 접촉게면의 산화반응을 억제하게 되어 열적안정성을 유지하게 되는 효과가 있다.Accordingly, the thermal stabilization method of gallium arsenide semiconductor and ruthenium oxide contact barrier is a schottky contact metal of gallium arsenide semiconductor, and hydrogenation is performed on the surface of gallium arsenide semiconductor to increase the contact stability of ruthenium oxide, which is a small resistivity and stable oxide. By neutralizing the electrical ion state of defects and impurities that may be present on the surface of the semiconductor, it is possible to prevent the interface pinning effect affecting the contact barrier and to suppress the oxidation reaction of the contact surface, thereby providing thermal stability. It is effective to maintain.

Description

갈륨비소반도체와 산화루테늄 접촉베리어의 열적안정화방법Thermal stabilization of gallium arsenide semiconductor and ruthenium oxide contact barrier

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 의해 수소화된 갈륨비소표면 위에 산화루테늄박막을 증착시 단면도.2 is a cross-sectional view of depositing a ruthenium oxide thin film on a gallium arsenide surface hydrogenated by the present invention.

Claims (2)

산화루테늄을 직류마그테트론 스퍼터링법으로 갈륨비소반도체 표면 위에 중착함에 있어서, 상기 산화루테늄과 갈륨비소반도체의 계면상에 존재하는 각종 결함들의 전기적 활성상태를 중성화하도록 갈륨비소의 표면을 수소화처리한 후, 산화루테늄으로 박막증착함을 특징으로 하는 갈륨비소반도체와 산화루테늄 접촉베리어의 열적안정화방법.In depositing ruthenium oxide on the surface of gallium arsenide semiconductor by direct current magnetite sputtering, the surface of gallium arsenide is hydrogenated to neutralize the electrical activity of various defects present at the interface between the ruthenium oxide and gallium arsenide semiconductor. After that, a method of thermal stabilization of a gallium arsenide semiconductor and ruthenium oxide contact barrier characterized in that the thin film is deposited with ruthenium oxide. 제1항에 있어서, 상기 갈륨비소표면의 수소화처리는 프라즈마파우어를 0.06~0.1W/㎠로 하고, 기판온도를 150~250℃로 유지하여 수행함을 특징으로 하는 갈륨비소반도체와 산화루테늄 접촉베리어의 열적안정화방법.2. The gallium arsenide semiconductor and ruthenium oxide contact barrier according to claim 1, wherein the hydrogenation of the gallium arsenide surface is carried out by maintaining plasma power at 0.06 to 0.1 W / cm < 2 > and maintaining the substrate temperature at 150 to 250 < 0 > C. Thermal stabilization method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940033313A 1994-12-08 1994-12-08 Thermal stabilizing method of contact barrier of gaas semiconductor and ruthenium oxide KR0162863B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940033313A KR0162863B1 (en) 1994-12-08 1994-12-08 Thermal stabilizing method of contact barrier of gaas semiconductor and ruthenium oxide

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Application Number Priority Date Filing Date Title
KR1019940033313A KR0162863B1 (en) 1994-12-08 1994-12-08 Thermal stabilizing method of contact barrier of gaas semiconductor and ruthenium oxide

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KR960026134A true KR960026134A (en) 1996-07-22
KR0162863B1 KR0162863B1 (en) 1999-02-01

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990064934A (en) * 1999-05-25 1999-08-05 이환철 Fabrication method of an insulating films for MIS electronic devices
KR100430683B1 (en) * 1996-12-31 2004-07-05 주식회사 하이닉스반도체 Method of forming metal line of semiconductor device using diffusion barrier layer

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100757738B1 (en) * 2006-09-21 2007-09-12 연세대학교 산학협력단 Method for removing metal/gaas schottky contact interface impurities

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100430683B1 (en) * 1996-12-31 2004-07-05 주식회사 하이닉스반도체 Method of forming metal line of semiconductor device using diffusion barrier layer
KR19990064934A (en) * 1999-05-25 1999-08-05 이환철 Fabrication method of an insulating films for MIS electronic devices

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