KR960019609A - Gate insulating film formation method of MOSFET - Google Patents

Gate insulating film formation method of MOSFET Download PDF

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KR960019609A
KR960019609A KR1019940030616A KR19940030616A KR960019609A KR 960019609 A KR960019609 A KR 960019609A KR 1019940030616 A KR1019940030616 A KR 1019940030616A KR 19940030616 A KR19940030616 A KR 19940030616A KR 960019609 A KR960019609 A KR 960019609A
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South Korea
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insulating film
gate insulating
heat treatment
forming
present
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KR1019940030616A
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Korean (ko)
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KR0148034B1 (en
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노태문
이대우
김광수
강진영
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양승택
재단법인 한국전자통신연구소
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

본 발명은 반도체 제조공정에 있어서 초고집적회로(ULSI)에 사용되는 MOSFET의 게이트절연막을 형성하는 방법에 관한 것으로, 특히 종래의 방법에 비해 낮은 온도와 짧은 시간에 게이트절연막을 형성시켜 짧은-채널효과(short-channel effect)를 줄이고, 성장된 절연막과 기판의 계면에 소정의 불순물을 주입시켜 절연막의 신뢰성을 개선시킬 수 있는 게이트절연막의 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a gate insulating film of a MOSFET used in an ultra-high integrated circuit (ULSI) in a semiconductor manufacturing process. In particular, the present invention relates to a short-channel effect by forming a gate insulating film at a lower temperature and a shorter time than a conventional method. The present invention relates to a method of forming a gate insulating film which can reduce the short-channel effect and inject predetermined impurities into the interface between the grown insulating film and the substrate to improve the reliability of the insulating film.

본 발명은 고압의 산소 분위기에서 열전기로 또는 급속 열처리장치를 이용하여 산화막을 성장시키고 성장된 산화막을 상압 또는 고압의 N2O 분위기에서 열처리 공정을 수행함으로써, 게이트절연막의 신뢰성을 최대로 확보하면서 공정온도를 낮추고 공정시간을 단축시키는 것이다.The present invention is a process while ensuring the reliability of the gate insulating film by maximizing the reliability of the gate insulating film by growing an oxide film in a high-temperature oxygen atmosphere using a thermoelectric or a rapid heat treatment apparatus and performing a heat treatment process in the N 2 O atmosphere of the atmospheric pressure or high pressure It is to lower the temperature and shorten the process time.

또한, 게이트절연막과 기판과의 계면에 질소를 효과적으로 주입하여 p+다결정실리콘에 의한 게이트 형성시 불순물인 붕소가 채널영역으로 주입되는 것을 억제시킨다.In addition, nitrogen is effectively injected into the interface between the gate insulating film and the substrate to suppress the implantation of boron, which is an impurity, into the channel region during gate formation by p + polycrystalline silicon.

Description

모스전계효과 트랜지스트(MOSFET)의 게이트 절연막 형성방법Gate insulating film formation method of MOSFET

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3(A)~(B)는 본 발명의 일실시예에 의해 MOSFET의 게이트 절연막을 형성시키는 방법을 나타낸 공정단면도이다,3 (A) to (B) are process cross-sectional views showing a method of forming a gate insulating film of a MOSFET according to an embodiment of the present invention.

제4도(A)~(B)는 본 발명의 다른 실시예에 의해 MOSFET 소자의 게이트 절연막 형성방법을 나타낸 공정단면도이다.4A to 4B are process cross-sectional views showing a method of forming a gate insulating film of a MOSFET device according to another embodiment of the present invention.

Claims (6)

초고집적회로에 사용되는 모스전계효과 트랜지스터의 제조방법에 있어서, 고압의 O2가스 분위기 하에서 열전기로를 사용하여 산화막을 성장시키는 열산화 공정과, 상압의 N2O 가스 분위기 하에서의 급속열처리 방법(Rapid Thermal Annealing)을 이용한 열처리 공정으로 이루어진 것을 특징으로 하는 게이트절연막의 형성방법.In the manufacturing method of the MOS field effect transistor used for the ultra-high integrated circuit, a thermal oxidation step of growing an oxide film using a thermoelectric furnace under a high pressure O 2 gas atmosphere, and a rapid heat treatment method under an atmospheric pressure N 2 O gas atmosphere (Rapid A method of forming a gate insulating film, characterized in that the heat treatment process using a thermal annealing). 제1항에 있어서, 상기 열처리 공정이 고압의 N2O 가스 분위기 하에서의 열전기로를 이용한 것을 특징으로 하는 게이트 절연막의 형성방법.The method of forming a gate insulating film according to claim 1, wherein the heat treatment step uses a thermoelectric furnace under a high pressure N 2 O gas atmosphere. 제1항에 있어서, 상기 열산화 공정이 급속열처리 방법을 이용한 것을 특징으로 하는 게이트절연막의 형성방법.The method for forming a gate insulating film according to claim 1, wherein the thermal oxidation process uses a rapid heat treatment method. 초고집적회로에 사용되는 모스전계효과 트랜지스터의 제조방법에 있어서, 고압의 O2및 N2O가 혼합된 혼합가스 분위기 하에서 열전기로를 사용하여 산화막을 성장시키는 열산화 공정과, 상압의 N2또는 O2가스 분위기 하에서의 급속열처리 방법을 이용한 열처리 공정으로 이루어진 것을 특징으로 하는 게이트 절연막의 형성방법.In the manufacturing method of the MOS field effect transistor used in the ultra-high integrated circuit, a thermal oxidation process for growing an oxide film using a thermoelectric furnace in a mixed gas atmosphere of high-pressure O 2 and N 2 O, and N 2 or atmospheric pressure A method of forming a gate insulating film comprising a heat treatment step using a rapid heat treatment method under an O 2 gas atmosphere. 제4항에 있어서, 상기 열처리 공정이 고압에서 열전기로를 사용하는 것을 특징으로 하는 게이트 절연막의 형성방법.5. The method for forming a gate insulating film according to claim 4, wherein the heat treatment step uses a thermoelectric furnace at high pressure. 제1항 또는 제4항에 있어서, 상기 열처리 공정이 질소를 함유한 가스 대신에 불소(F), 탄소(C) 및 염소(Cl) 중의 어느 하나가 포함되어 있고 수소(H)가 포함되지 않은 가스를 사용하는 것을 특징으로 하는 게이트 절연막의 형성방법.The process according to claim 1 or 4, wherein the heat treatment process includes any one of fluorine (F), carbon (C), and chlorine (Cl) instead of nitrogen-containing gas and does not contain hydrogen (H). A method of forming a gate insulating film comprising using a gas. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940030616A 1994-11-21 1994-11-21 Method for forming insulating film of mosfet KR0148034B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940030616A KR0148034B1 (en) 1994-11-21 1994-11-21 Method for forming insulating film of mosfet

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KR1019940030616A KR0148034B1 (en) 1994-11-21 1994-11-21 Method for forming insulating film of mosfet

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KR960019609A true KR960019609A (en) 1996-06-17
KR0148034B1 KR0148034B1 (en) 1998-11-02

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