KR960010009B1 - Non-photographic method for patterning organic polymer films - Google Patents
Non-photographic method for patterning organic polymer films Download PDFInfo
- Publication number
- KR960010009B1 KR960010009B1 KR1019920700903A KR920700903A KR960010009B1 KR 960010009 B1 KR960010009 B1 KR 960010009B1 KR 1019920700903 A KR1019920700903 A KR 1019920700903A KR 920700903 A KR920700903 A KR 920700903A KR 960010009 B1 KR960010009 B1 KR 960010009B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- solvent
- organic polymer
- patterned
- polymer
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 66
- 229920000620 organic polymer Polymers 0.000 title claims description 59
- 238000000059 patterning Methods 0.000 title claims description 36
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- HQUQLFOMPYWACS-UHFFFAOYSA-N tris(2-chloroethyl) phosphate Chemical compound ClCCOP(=O)(OCCCl)OCCCl HQUQLFOMPYWACS-UHFFFAOYSA-N 0.000 description 1
- YPDXSCXISVYHOB-UHFFFAOYSA-N tris(7-methyloctyl) benzene-1,2,4-tricarboxylate Chemical compound CC(C)CCCCCCOC(=O)C1=CC=C(C(=O)OCCCCCCC(C)C)C(C(=O)OCCCCCCC(C)C)=C1 YPDXSCXISVYHOB-UHFFFAOYSA-N 0.000 description 1
- FJFYFBRNDHRTHL-UHFFFAOYSA-N tris(8-methylnonyl) benzene-1,2,4-tricarboxylate Chemical compound CC(C)CCCCCCCOC(=O)C1=CC=C(C(=O)OCCCCCCCC(C)C)C(C(=O)OCCCCCCCC(C)C)=C1 FJFYFBRNDHRTHL-UHFFFAOYSA-N 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
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- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M3/00—Printing processes to produce particular kinds of printed work, e.g. patterns
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- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
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- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
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- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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Abstract
요약없음No summary
Description
도면은 2개의 도면으로 이루어진다.The figure consists of two figures.
제1도는 네가티브 작용 방식에 있어서의 본 발명의 방법의 개략도이다.1 is a schematic of the method of the invention in a negative mode of action.
제2도는 포지티브 작용 방식에 있어서의 본 발명의 방법의 개략도이다.2 is a schematic of the method of the invention in a positive mode of action.
발명의 분야Field of invention
본 발명은 유기 중합체 필름, 특히 후막 하이브리드 등의 단층 및 다층 전자 소자의 제조에 사용하기 위한 유기 중합체 필름을 패턴화시키는 비포토그래픽(non-photographic) 방법에 관한 것이다.The present invention relates to a non-photographic method of patterning organic polymer films, in particular organic polymer films for use in the production of monolayer and multilayer electronic devices such as thick film hybrids.
발명의 배경Background of the Invention
후막법은 역사적으로 엄격하고 신뢰성이 있는 도체, 유전체 및 저항기의 제조 방법으로 관심을 끌어 왔다. 이 후막법은 생산 조업이 짧은 경제적인 생산을 위해서는 아주 적합한 방법이다. 다층 구성물을 패턴화시킬 수 있는 그 능력은 극히 고밀도의 회로를 갖는 소자를 제작할 수 있게 하였다. 다층 구조에 있어서 도체의 연속 레벨(level)은 유전층들을 절연시킴에 의해 분리되고, 유전층들을 관통하는 비아에 의해 상호연결된다.Thick film methods have historically been of interest as a method of making stringent and reliable conductors, dielectrics and resistors. This thick film method is suitable for economic production with short production runs. The ability to pattern multilayer structures has made it possible to fabricate devices with extremely high density circuits. In a multilayer structure, the continuous levels of conductors are separated by insulating dielectric layers and interconnected by vias through the dielectric layers.
다층법은 면밀한 검사, 층간 재정렬 및 블리스터링(blistering)과 크래킹(cracking)을 방지하기 위한 신중한 가공을 요하기 때문에 단층법보다는 비경제적이다.Multilayer methods are less economical than single layer methods because they require careful inspection, interlayer realignment, and careful processing to prevent blistering and cracking.
다층 제품과 관련한 상기 문제점들을 가장 확실히 해결할 수 있는 방법은 선 및 공간 치수를 줄여서 일정구조에 있어서의 층수를 감소시키는 방법이다. 그러나, 이 방법은 후막 스크린 프린트법에 있어서 회로의 층들을 접속하는데 사용된 비아의 크기를 약 0.025∼약 0.038cm(10∼15mil) 직경으로 한정시킴으로써 해상능이 한정된다는 문제점을 가지고 있다. 마찬가지로, 도체는 생산량에 있어서 약 0.013∼약 0.018cm(5∼7mil) 선 및 공간의 아주 협소한 선폭 및 공간으로 한정된다.The most reliable solution to the above problems with multilayer products is to reduce the number of layers in a given structure by reducing the line and space dimensions. However, this method has a problem in that the resolution is limited by limiting the size of the via used to connect the layers of the circuit to a thickness of about 0.025 to about 0.038 cm (10 to 15 mils) in the thick film screen printing method. Likewise, conductors are limited to very narrow linewidths and spaces of about 0.013 to about 0.018 cm (5 to 7 mil) lines and spaces in production.
그 밖에도, 보다 미세한 피치선 및 보다 작은 비아를 얻기 위한 많은 다른 방법들이 연구되어 왔다. 극히 미세한 스크린 메쉬 및 개량한 에멀젼 배킹(emulsion backing)은 약 0.010cm(4mil) 선/공간만큼 낮은 선 해상도를 갖는 한정된 제품을 얻을 수 있게 하였다. 광 성형성 페이스트가 개발되어 비아를 약 0.013cm(5mil) 이하로, 그리고 선/공간 피치를 약 0.005 내지 약 0.008cm(2 내지 3mil)로 할 수 있었다. 또한, 후막 금속화물을 포토레지스트로 패턴화하여 에칭하여 미세한 선 패턴을 제작하였고, 박막 도체를 도금하여 고도전성을 갖는 미세한 선 패턴을 제작하였다.In addition, many other methods have been studied for obtaining finer pitch lines and smaller vias. The extremely fine screen mesh and the improved emulsion backing made it possible to obtain a limited product with line resolution as low as about 0.010 cm (4 mil) line / space. Photoformable pastes have been developed to allow vias to be less than about 0.013 cm (5 mils) and line / space pitches from about 0.005 to about 0.008 cm (2 to 3 mils). Further, the thick film metallization was patterned with a photoresist and etched to produce fine line patterns, and the thin film conductors were plated to produce fine line patterns having high conductivity.
그러나, 상기 방법들은 모두 결점을 가지고 있다. 예를 들면, 미세한 메쉬 스크린은 대체적으로 요구하는 것보다 얇은 도체 및 유전층들을 버린다. 광 성형성 페이스트는, 소성 도중에 수축을 배가시키고 또 소성 부품을 사용할 수 없게 하는 더러운 연소물을 생성할 수 있는 유기 물질을 다량으로 가진다. 광 성형성 페이스트를 사용하여 제조한 도체는 불필요한 연부 컬(curl)을 가지며, 이 연부 컬로 인해 광 성형성 페이스트로 제작한 회로의 신뢰성이 줄어들 수 있다. 또한, 에치, 포토레지스트, 또는 도금을 요하는 모든 사진 제판법은 공정이 길고, 프로세스 감응법(process sensitive)이며, 비경제적이다.However, all of these methods have drawbacks. For example, fine mesh screens typically discard thinner conductors and dielectric layers than required. The photoformable paste has a large amount of organic material that can produce dirty combustion products that double the shrinkage during firing and render the plastic parts unusable. Conductors made using photoformable pastes have unnecessary edge curls, which can reduce the reliability of circuits made of photoformable pastes. In addition, any photolithography method that requires etch, photoresist, or plating is lengthy, process sensitive, and uneconomical.
발명의 개요Summary of the Invention
그러므로, 본 발명은 유기 중합체 필름에 패턴을 형성하는 비포토그래픽 방법에 관한 것으로, 이 방법은 a. 기판에 예정된 용리액 중에서 분산할 수 있는 고상 유기 중합체로 이루어지는 미패턴화 제1층을 도포시키는 단계, b. 미패턴화 제1층에 예정된 용리액 중에서 고상 유기 중합체의 분산성을 변화시킬 수 있는 제제로 이루어지는 패턴화 제2층을 도포시키는 단계, c. 분산성 변화제(dispersibility-changing agent)를 하부(下敷) 고상 제1층에 패턴화 확산시키는 단계, 및 d. 용리액 중에서 분산할 수 있는 하부 제1층의 영역을 예정된 용리액으로 세척하여 제거하는 단계의 연속 단계로 이루어진다.Therefore, the present invention relates to a non-photographic method of forming a pattern on an organic polymer film, which method comprises: a. Applying to the substrate an unpatterned first layer consisting of a solid organic polymer that can be dispersed in a predetermined eluent, b. Applying to the unpatterned first layer a patterned second layer comprising a formulation capable of varying the dispersibility of the solid organic polymer in a predetermined eluent, c. Patterning diffusion of a dispersibility-changing agent into the underlying solid first layer, and d. The area of the lower first layer that can be dispersed in the eluent consists of a continuous step of washing and removing with a predetermined eluent.
본 발명은 네가 화상(negative images) 또는 포지 화상(positive images)을 제조하는데 사용될 수 있다.The present invention can be used to produce negative images or positive images.
네가티브 작용(negative-acting) 방식에 있어서, 그 방법은 a. 기판에 고상 유기 중합체로 이루어지는 미패턴화 제1고상 유기 중합체 층을 도포시키는 단계, b. 미패턴화 제1층에 고상 유기 중합체, (1) 제1유기 중합체 층의 중합체를 위한 분산제이고 (2) 용매보다 높은 대기압 비점을 갖는 분산성 변화제 및 임의로 용매의 점성 분산물로 이루어지는 패턴화 제2층을 도포시키는 단계, c. 패턴화 제2층을 건조하여 그로부터 용매를 제거하고, 분산성 변화제를 하부 제1유기 중합체 층에 패턴화 확산시키는 단계, 및 d. 패턴화 제2층 및 하부 제1층의 확산 패턴화 영역을 제2층 및 제1층의 확산 패턴화 영역이 분산할 수 있는 용리액 중에서 세척하여 제거하는 단계의 연속 단계로 이루어진다.In the negative-acting mode, the method is a. Applying an unpatterned first solid organic polymer layer consisting of a solid organic polymer to a substrate, b. A patterning consisting of a solid organic polymer in the unpatterned first layer, (1) a dispersant for the polymer of the first organic polymer layer and (2) a dispersibility modifier having an atmospheric boiling point higher than the solvent and optionally a viscous dispersion of the solvent. Applying a second layer, c. Drying the patterned second layer to remove the solvent therefrom, and patterning diffusion of the dispersibility modifier into the lower first organic polymer layer, and d. A continuous step of washing and removing the diffusion patterned region of the patterned second layer and the lower first layer in an eluent that can be dispersed by the diffusion patterned region of the second layer and the first layer.
포지티브 작용(positive-acting) 방식에 있어서, 그 방법은 a. 기판에 예정된 용매 중에서 분산할 수 있는 고상 유기 중합체로 이루어지는 미패턴화 제1층을 도포시키는 단계, b. 미패턴화 제1층에 용매 중에서 유기 중합체의 분산성을 감소시킬 수 있는 분산성 변화제로 이루어지는 패턴화 제2층을 도포시키는 단계, c. 패턴화 제2층을 가열하여 분산성 변화제를 하부 제1유기 중합체 층에 패턴화 확산시키고, 용매 중에서의 제1층 중합체의 확산 패턴화 영역의 분산성을 감소시키는 단계, 및 d. 하부 제1층의 비패턴화 영역을 예정된 용매 중에서 세척하여 제거하는 단계의 연속 단계로 이루어진다.In a positive-acting mode, the method comprises: a. Applying to the substrate an unpatterned first layer consisting of a solid organic polymer that can be dispersed in a predetermined solvent, b. Applying to the unpatterned first layer a patterned second layer comprising a dispersibility modifier capable of reducing the dispersibility of the organic polymer in a solvent, c. Heating the patterned second layer to patterned diffuse the dispersibility modifier into the lower first organic polymer layer and reduce the dispersibility of the diffusion patterned region of the first layer polymer in a solvent, and d. The unpatterned region of the lower first layer consists of a sequential step of washing away in a predetermined solvent.
도면의 상세한 설명Detailed description of the drawings
제1도에서는, 개략적으로 a. 기판(1)에 미패턴화 제1고상 유기 중합체 층(3)을 도포시키는 단계, b. 미패턴화 제1고상 유기 중합체 층(3)에 고상 유기 중합체, (a) 제1유기 중합체 층(3)의 중합체 중에서 가용성이고, (b) 용매보다 높은 대기압 비점을 갖는 가용화제 및 용매의 용액으로 이루어지는 패턴화 제2층(5)을 도포시키는 단계, c. 패턴화 제2층(5)을 가열하여 그로부터 용매를 제거하고, 가용화제를 하부 제1고상 유기 중합체 층(3a)에 패턴화 확산시키는 단계, 및 d. 패턴화 제2층(5) 및 하부 제1고상 유기 중합체 층의 확산 패턴화 영역(3a)을, 제2층(5)의 고상 유기 중합체 및 제1층(3)의 확산 패턴화 층이 용해할 수 있는 제2용매 중에서 세척하여 제거하는 단계의 연속 단계로 이루어지는, 유기 중합체 필름에 패턴을 형성하는 네가티브 작용성 비포토그래픽 방법을 나타낸다.In Figure 1, schematically a. Applying an unpatterned first solid organic polymer layer (3) to the substrate (1), b. A solution of a solubilizer and a solvent which is soluble in the solid organic polymer in the unpatterned first solid organic polymer layer (3), (a) in the polymer of the first organic polymer layer (3), and (b) has an atmospheric boiling point higher than that of the solvent. Applying a patterned second layer 5 consisting of, c. Heating the patterned second layer 5 to remove solvent therefrom and patterning diffusion of the solubilizer into the lower first solid organic polymer layer 3a, and d. The diffusion patterning region 3a of the patterned second layer 5 and the lower first solid organic polymer layer is dissolved in the solid phase organic polymer of the second layer 5 and the diffusion patterning layer of the first layer 3. A negative functional non-photographic method of forming a pattern in an organic polymer film, consisting of a continuous step of washing and removing in a second solvent which can be employed.
제2도에서는, 개략적으로 a. 기판(11)에 예정된 용매 중에서 가용성인 고상 유기 중합체로 이루어지는 미패턴화 제1층(13)을 도포시키는 단계, b. 미패턴화 제1층(13)에 용매 중에서 유기 중합체의 용해도를 감소시킬 수 있으며 용매 중에서 본질적으로 불용해성인 불용화제(desolubilizing agent)로 이루어지는 패턴화 제2층(15)을 도포시키는 단계. c. 패턴화 제2층(15)을 가열하여 불용화제를 하부 제1유기 중합체 층(13)에 패턴화 확산시키고, 제1층에서의 중합체의 확산 패턴화 영역(13a)에 용매 중에서의 불용해성을 부여하는 단계, d. 하부 제1층(13)의 비패턴화 영역을 예정된 용매 중에서 세척하여 제거하는 단계의 연속 단계로 이루어지는, 유기 중합체 필름에 패턴을 형성하는 포지티브 작용성 비포토그래픽 방법을 나타낸다.In Figure 2, schematically a. Applying to the substrate 11 an unpatterned first layer 13 consisting of a soluble solid organic polymer in a predetermined solvent, b. Applying to the unpatterned first layer (13) a patterned second layer (15) consisting of a desolubilizing agent which can reduce the solubility of the organic polymer in the solvent and is essentially insoluble in the solvent. c. The patterned second layer 15 is heated to pattern-diffuse the insolubilizer into the lower first organic polymer layer 13 and insoluble in the solvent in the diffusion patterned region 13a of the polymer in the first layer. Giving, d. A positive functional non-photographic method of forming a pattern in an organic polymer film, consisting of a continuous step of washing and removing the unpatterned region of the lower first layer 13 in a predetermined solvent.
패턴화 제2층(15)의 불용화제 고갈 영역이 용매 중에서 가용성이면, 이들 영역은 용매 세척 단계 도중에 제거된다. 한편, 패턴화 제2층(15)의 불용화제 고갈 영역이 용매 중에서 불용해성이면, 이들 영역은 용매 세척 단계 후에도 잔류할 것이다.If the insolubilizer depletion regions of the patterned second layer 15 are soluble in the solvent, these regions are removed during the solvent wash step. On the other hand, if the insolubilizer depletion regions of the patterned second layer 15 are insoluble in the solvent, these regions will remain after the solvent wash step.
정의Justice
본 명세서에서 사용된 바와 같이, 하기 용어는 다음과 같은 의미를 가진다.As used herein, the following terms have the following meanings.
용어 용리액은 하부 미패턴화 층을 용해시킬 수 있거나 또는 달리 분산시킬 수 있는 형태로 바꿀 수 있는 임의의 액상 또는 기상 유체를 의미한다.The term eluent means any liquid or gaseous fluid that can be transformed into a form that can dissolve or otherwise disperse the lower unpatterned layer.
용어 분산시킬 수 있는은 일정 물질로 된 필름과 관련하여 이 물질이 세척액의 물리적 또는 화학적 작용에 의해서 또는 리프팅 오프(lifting off)에 의해서 치환 또는 제거될 수 있는 것을 의미한다.The term dispersible means that in relation to a film of a certain substance, this substance can be replaced or removed by the physical or chemical action of the cleaning liquid or by lifting off.
용어 휘발성 용매는 120℃이하의 온도, 1기압에서 증발에 의해 제거될 수 있는 임의의 용매를 의미한다.The term volatile solvent means any solvent that can be removed by evaporation at a temperature of 120 ° C. or below, 1 atmosphere.
하부 중합체 층의 확산 패턴화 영역의 제거는 다음과 같은 일련의 메카니즘에 의해 일어날 수 있다 : (1) 용매 중에서 확산 패턴화 영역내의 중합체를 용해하고, 그리하여 생성된 중합체 용액을 세척해내는 메카니즘 ; (2) 확산 패턴화 영역내의 중합체를 분해하고, 분해 생성물을 세척 및(또는) 증발시키는 메카니즘 ; (3) 확산 패턴화 영역내의 중합체를 세제로 에멀젼화시키고, 그 분산물을 수용성 세척액으로 제거하는 메카니즘 ; (4) 확산 패턴화 영역내의 중합체를 용매 및(또는) 가소화 작용에 의해 연화시켜서 기판에 대한 그의 점착성을 줄이고, 연화된 필름을 기판으로부터 박리시키는 메카니즘 ; (5) 확산 패턴화 영역내의 중합체를 이온화시키고, 기판으로부터 이온화 중합체를 이온성 수용액으로 세척하는 메카니즘 ; 및 (6) 확산 패턴화 영역내의 중합체를 불용화시키고, 확산 패턴화 영역 이외의 중합체 필름을 제거하는 메카니즘.Removal of the diffusion patterning region of the lower polymer layer may occur by a series of mechanisms: (1) a mechanism for dissolving the polymer in the diffusion patterning region in a solvent and thus washing the resulting polymer solution; (2) a mechanism for decomposing the polymer in the diffusion patterning region and washing and / or evaporating the decomposition product; (3) a mechanism for emulsifying the polymer in the diffusion patterning region with a detergent and removing the dispersion with an aqueous washing solution; (4) a mechanism for softening the polymer in the diffusion patterning region by a solvent and / or plasticizing action to reduce its adhesion to the substrate and to peel the softened film from the substrate; (5) a mechanism for ionizing the polymer in the diffusion patterning region and washing the ionizing polymer from the substrate with an ionic aqueous solution; And (6) a mechanism for insolubilizing the polymer in the diffusion patterning region and removing a polymer film other than the diffusion patterning region.
발명의 상세한 설명Detailed description of the invention
A. 기판A. Substrate
본 발명의 방법은, Al2O3, SiO2, 규소, AlN 등의 무기제 기판 또는 폴리이미드, 페녹시 수지, 에폭시 수지 등의 유기제 기판, 또는 유기 중합체로 충전된 것과 같은 복합 기판 상에 사용될 수 있다.The method of the present invention is carried out on an inorganic substrate such as Al 2 O 3 , SiO 2 , silicon, AlN, or an organic substrate such as polyimide, phenoxy resin, epoxy resin, or a composite substrate filled with an organic polymer. Can be used.
B. 유기 중합체B. Organic Polymer
고상 유기 중합체가 실질적으로 비결정성이고, 그 스스로 또는 가용화제 또는 불용화제의 첨가에 의해 적당한 용해도 특성을 갖는 한, 각종 고상 유기 중합체가 중합체 층의 어느 하나 또는 모두에 대한 재료로서 사용될 수 있다.As long as the solid organic polymer is substantially amorphous and has adequate solubility properties by itself or by the addition of solubilizers or insolubilizers, various solid organic polymers can be used as materials for either or both of the polymer layers.
양쪽 모두의 중합체 층의 본질적 특성은 중합체가 실질적으로 비결정성이어야 한다는 것이다. 그러므로, 본 명세서에서 사용된 바와 같이, 용어 비결정성 중합체는 약 50% 이하의 결정도를 갖는 중합체를 의미한다. 이와 같은 사실상의 비결정성은 패턴화 제2층(상부 중합체 층)에서 하부 중합체 층으로 용해도 조절제의 확산을 촉진시키기 위해서는 필수적이다. 따라서, 본 발명의 방법에 사용될 수 있는 많은 유형의 비결정성 중합체 중에서도 특히 다음과 같은 것이 바람직하다.An essential property of both polymer layers is that the polymer should be substantially amorphous. Therefore, as used herein, the term amorphous polymer means a polymer having a crystallinity of about 50% or less. Such virtual amorphousness is essential to facilitate diffusion of the solubility modifier from the patterned second layer (upper polymer layer) to the lower polymer layer. Accordingly, among the many types of amorphous polymers that can be used in the process of the present invention, the following are particularly preferred.
I. 중합 방법에 의해서I. By polymerization method
부가 중합체Addition polymer
축합 중합체Condensation polymer
II. 물리적 특성에 의해서II. By physical characteristics
가수분해성 중합체Hydrolyzable polymer
가교성 중합체Crosslinkable polymer
열가소성 중합체Thermoplastic polymer
이온화성 중합체Ionizable polymer
열경화성 중합체Thermosetting polymer
엘라스토머Elastomer
III. 조성에 의해서III. By composition
폴리카르보네이트Polycarbonate
폴리이미드Polyimide
폴리에스테르Polyester
올레핀 공중합체Olefin Copolymer
폴리아크릴레이트(메타크릴레이트 포함)Polyacrylates (including methacrylates)
폴리스티렌polystyrene
페녹시 수지Phenoxy resin
페놀-포름알데히드 수지Phenolic-Formaldehyde Resin
셀룰로오스 중합체Cellulose polymer
폴리(비닐 아세테이트)Poly (vinyl acetate)
폴리(비닐 부티랄)Poly (vinyl butyral)
폴리(비닐 클로라이드)Poly (vinyl chloride)
폴리(비닐 클로라이드 아세테이트)Poly (vinyl chloride acetate)
C. 배합 및 응용C. Formulation and Application
본 발명의 방법은 주로 두께가 적은 층, 예를 들면 전자 부품의 제작에서 사용되는 층들에 대해 사용하고자 하는 목적으로 개발되었다. 전형적으로, 제2층 중합체는 두께가 10 내지 30미크론 범위인 반면, 제1층 중합체는 10 내지 100미크론 범위의 훨씬 더 큰 두께를 가질 수 있다. 패턴화 층의 두께는 작동성(operability)의 고려에 의한 것보다는 주로 이용 방법에 의해서 한정된다.The method of the present invention has been developed primarily for the purpose of use for smaller thickness layers, for example layers used in the manufacture of electronic components. Typically, the second layer polymer has a thickness in the range of 10 to 30 microns while the first layer polymer can have a much larger thickness in the range of 10 to 100 microns. The thickness of the patterned layer is mainly limited by the method of use rather than by consideration of operability.
제2층에서의 가용화제의 양은 가용화제를 확산에 의해 하부 제1층에 충분히 제공할 수 있는 양이어야 한다. 따라서, 제2층은 가용화제를 적어도 10중량% 이상 함유해야 하며, 각 중합체의 용해도 관계에 따라 90중량%만큼 많은 양으로 함유할 수 있다.The amount of solubilizer in the second layer should be such that the solubilizer can be sufficiently provided to the lower first layer by diffusion. Thus, the second layer should contain at least 10% by weight or more of a solubilizer, and may contain as much as 90% by weight, depending on the solubility relationship of each polymer.
또한, 경우에 따라서는, 가소제 또는 다른 가용화제를 하부 제1층에 첨가하여 중합체가 제2중합체 층으로부터 확산되는 가용화제의 작용에 더욱 민감하게 반응할 수 있도록 하는 것이 바람직하다.Also, in some cases, it is desirable to add a plasticizer or other solubilizer to the lower first layer so that the polymer can be more sensitive to the action of the solubilizer diffused from the second polymer layer.
대체적으로, 본 발명의 방법에 의한 개개의 컴포넌트 층 제조단계는 당업자가 알고 있는 통상의 후막, 그린 테이프 및 중합체 기술의 제조 방법과 유사하다. 따라서, 다음과 같이 공정이, 새로운 방법은 아니지만, 본 발명에 사용하고자 하는 재료를 배합하고 제조하는 바람직한 방법을 설명한다.In general, the individual component layer manufacturing steps by the method of the present invention are similar to the manufacturing methods of conventional thick film, green tape and polymer techniques known to those skilled in the art. Therefore, although the process is not a new method as follows, the preferable method of compounding and manufacturing the material to be used in the present invention will be described.
1. 페이스트 제조 공정 및 유전체 언더프린트1. Paste Manufacturing Process and Dielectric Underprint
a. 프리밀링 : 유전성 무기 성분을 볼밀에서 거의 동중량의 메탄올 또는 이소프로판올과 함께 30 내지 90분동안 롤밀링시켜서 예비 분산시킨 다음, 따라내고, 2 내지 16시간 동안 방치시켜서 고형분을 침전시켰다. 이어서 상징 알코올을 따라내고, 고형물을 질소하에서 건조하여 실온에서의 폭발 가능성을 줄이고, 오븐에서 1시간동안 완전히 건조시킨다.a. Premilling: The dielectric inorganic component was pre-dispersed by rolling in a ball mill with almost equal weight of methanol or isopropanol for 30-90 minutes, then decanted and left for 2-16 hours to precipitate solids. The symbolic alcohol is then decanted and the solid is dried under nitrogen to reduce the possibility of explosion at room temperature and completely dried in the oven for 1 hour.
b. 비히클 제조 : 용매, 수지, 산화방지제 및 t-부틸안트라퀴논을 모두 함께 수지병에 첨가하고, 가열하여 용해시킨다. 필요에 따라서는, 습윤제를 페이스트 제조 전에 용액에 첨가할 수도 있다. 수지 및 용매는, 이들을 상기 페이스트와 함께 최고 140℃로 가열하고, 이어서 이오놀, t-부틸안트라퀴논 및 임의로 습윤제의 첨가에 적합한 70℃로 냉각하였을 때 상기 페이스트에서 최상의 기능을 나타낸다. 또한, 습윤제는 다음의 페이스트 제조 단계에서 첨가할 수도 있다.b. Vehicle Preparation: Solvent, resin, antioxidant and t-butylanthraquinone are all added together to the resin bottle and heated to dissolve. If necessary, a humectant may be added to the solution prior to paste preparation. The resins and solvents show the best function in these pastes when they are heated with the paste to a maximum of 140 ° C. and then cooled to 70 ° C. suitable for the addition of ionol, t-butylanthraquinone and optionally a humectant. In addition, the humectant may be added at the next paste preparation step.
c. 페이스트 제조 : 페이스트는 예비분산된 고체를 비히클 및 다른 유기 성분들과 균일하게 혼합한 다음, 허용 연마 게이지(약 12/8 이상)가 얻어질 때까지 롤밀링을 행하여 제조된다. 필요에 따라서는 비히클 및(또는) 용매의 일부 소량을 롤밀링 이전의 배합물에 보류시킨 후, 충분량의 비히클 및(또는) 용매를 롤밀링 후에 첨가하여 소정의 점도를 얻는다. 따라서, 용매 또는 수지는 배합량에 기재된 규정량보다 약간 많거나 적은 양이 최종 배합물 중에 있을 수 있다.c. Paste Preparation: Pastes are prepared by uniformly mixing the predispersed solid with the vehicle and other organic components, and then rolling milling until an acceptable polishing gauge (at least about 12/8) is obtained. If desired, some small amount of vehicle and / or solvent is retained in the formulation before roll milling, and then a sufficient amount of vehicle and / or solvent is added after roll milling to achieve the desired viscosity. Thus, the solvent or resin may be present in the final formulation in amounts slightly or less than the prescribed amounts described in the formulation amounts.
또한, 기능의 최적화를 위해 필요한 가소제 양은 페이스트의 로트(lot)에 따라 약간 변할 수 있으며, 그리하여 소량의 가소제가 롤밀링 이전의 배합물에 보류될 수도 있다. 실제 제조 과정에 있어서는 몇개의 시험 배합물을 주 공장 설비로 제조하여, 비히클 및 무기 고체의 특정 조합을 위한 최선의 배합을 결정한다.In addition, the amount of plasticizer required for the optimization of function may vary slightly depending on the lot of paste, so that a small amount of plasticizer may be retained in the formulation before roll milling. In the actual manufacturing process, several test formulations are made at the main plant equipment to determine the best formulation for a particular combination of vehicle and inorganic solids.
2. 도체 언더프린트(Conductor Underprint)2. Conductor Underprint
a. 비히클 제조 : 이 비히클은 유전체 언더프린트용 비히클과 똑같이 제조한다.a. Vehicle Manufacturing: This vehicle is manufactured exactly as the vehicle for dielectric underprint.
b. 페이스트 제조 : 도체 무기 성분을 상기한 비히클 및 다른 유기 성분들과 함께 균일하게 혼합한다. 그런 다음, 이 혼합물을 롤밀링하여 허용 연마 게이지(약 15/8 이상)를 얻는다. 용매, 비히클 및(또는) 가소체의 일부를 롤밀링 이전에 보류시켜서 나중에 이들 성분의 양을 최적화시킬 수 있다. 밀링 및 배합법은 유전체에 대해 사용한 것과 유사하다.b. Paste Preparation: The conductor inorganic components are uniformly mixed with the vehicle and the other organic components described above. This mixture is then roll milled to obtain an acceptable polishing gauge (about 15/8 or more). Some of the solvent, vehicle and / or plasticizer may be retained prior to roll milling to optimize the amount of these components later. Milling and blending methods are similar to those used for dielectrics.
3. 패턴 형성용 오버프린트(Patterning Overprint)3. Pattern Overprint
비히클 제조 : 에틸 셀룰로오스 수지를 가소제 및 용매의 용액 중에 승온에서 미리 용해시켜서 비히클을 제조하며, 이 비히클은 페이스트 배합시 성분들의 혼합을 용이하게 한다. 용매 및(또는) 가소제의 일부가 필요에 따라서는 롤밀링 후에 첨가되어 최종 배합물 중에서 이들의 양을 최적화시킬 수 있기 때문에, 최종 배합물 중의 용매 및(또는) 가소제는 비히클을 제조하는데 전혀 사용되지 않는다. 따라서, 최종 배합물은 이 명세서에서 제시한 배합량과 꼭 대응하지 않을 수 있다. 그러나, 제조된 페이스트는 약간의 가변성을 나타낸다.Vehicle Preparation: A vehicle is prepared by dissolving ethyl cellulose resin in a solution of a plasticizer and a solvent at elevated temperature in advance, which facilitates mixing of the components in paste formulation. Solvents and / or plasticizers in the final formulation are not used at all to prepare the vehicle because some of the solvent and / or plasticizer can be added after roll milling as needed to optimize their amount in the final formulation. Thus, the final blend may not necessarily correspond to the blend amounts set forth herein. However, the pastes produced exhibit some variability.
4. 페이스트 제조 및 프린팅4. Paste Manufacturing and Printing
비히클 중에 함유되지 않은 패턴 형성용 페이스트의 무기 및 유기 성분들을 상기한 비히클과 균일하게 혼합한다. 그런 다음, 이 혼합물을 허용 연마 게이지(약 15/8 이상)까지 롤밀링한다. 용매, 비히클 및(또는) 가소제의 일부를 롤밀링 전에 보류시켜서 이들 성분의 양을 나중에 가장 효과적으로 활용할 수 있다. 밀링 및 배합법은 유전체에 대해 사용한 방법과 유사하다.The inorganic and organic components of the pattern forming paste not contained in the vehicle are mixed uniformly with the vehicle described above. This mixture is then roll milled to an acceptable polishing gauge (about 15/8 or more). Some of the solvent, vehicle, and / or plasticizer may be withheld prior to roll milling so that the amount of these components can be utilized most effectively later. Milling and blending methods are similar to those used for dielectrics.
전형적으로, 유전체 페이스트는 200메쉬 스크린을 사용해서 약 2.54∼약 5.08 cm/초(1∼2인치/초) 고무롤러 속력으로 2회 프린트한다. 패턴 형성용 페이스트는, 스크린의 작은 부분만이 개방 메쉬이기 때문에, 유전체 위에 보다 빠른 속력으로 프린트된다.Typically, the dielectric paste is printed twice at a speed of about 2.54 to about 5.08 cm / sec (1 to 2 inches / sec) rubber roller using a 200 mesh screen. The pattern forming paste is printed on the dielectric at a faster speed because only a small portion of the screen is an open mesh.
도체 페이스트는 목적한 도체 두께 및 해상도에 따라 325 또는 400메쉬 스크린으로 프린트한다. 마찬가지로, 패턴 형성용 페이스트는, 언더프린트에 전달된 가소제의 양을 가장 효과적으로 활용할 수 있는 325 또는 400 메쉬 스크린으로 프린트한다. 보다 성긴 스크린 및 소수의 프린트는, 박막이 전형적으로 도체로 사용되기 때문에, 유전체에 대해 더욱 필요하다.The conductor paste is printed on a 325 or 400 mesh screen depending on the desired conductor thickness and resolution. Similarly, the pattern forming paste prints on a 325 or 400 mesh screen that can most effectively utilize the amount of plasticizer delivered to the underprint. Coarser screens and fewer prints are more needed for dielectrics because thin films are typically used as conductors.
5. 선택 자재의 패턴화법5. Patterning of Selected Materials
본 발명의 확산 패턴화법의 잇점 중 하나는 얇은 패턴 형성용 피막으로 비교적 두꺼운 언더프린트 패턴을 패턴화시킬 수 있다는 것이다. 예를 들면, 부틸 벤진 프탈레이트와 같은 패턴 형성제의 두께를 1로 했을 때, 이 패턴 형성제를 사용해서 그 두께의 5 내지 10재의 인더프린트를 패턴화시킬 수 있다. 따라서, 이 방법은 매우 정확한 두께의 패턴을 만드는데 사용할 수 있다. 예를 들면, 스크린 프린트법에 의해 실시예 1의 조성물과 동일한 두께를 형성하기 위해서는 약 75∼175미크론(3∼7mil)의 정확하게 레지스터된 후막 잉크가 석출되어야 하며, 그동안 비아 개구부는 유입부로부터 약 0.010 cm(4mil)만큼의 작은 비아 개구부를 유지하고 있어야 한다.One of the advantages of the diffusion patterning method of the present invention is that it is possible to pattern a relatively thick underprint pattern with a thin pattern forming film. For example, when the thickness of a pattern forming agent such as butyl benzine phthalate is set to 1, the in-print of 5 to 10 materials having the thickness can be patterned using this pattern forming agent. Therefore, this method can be used to make a pattern of very accurate thickness. For example, to form the same thickness as the composition of Example 1 by screen printing, about 75 to 175 microns (3 to 7 mils) of correctly registered thick film ink must be deposited, during which the via openings are approximately from the inlet. Maintain a small via opening as small as 0.010 cm (4 mil).
비교적 얇은 프린트를 사용해서 매우 두꺼운 층을 패턴화시키는 이 능력은 스크린 프린트법에 비해 현저하게 큰 처리 능력 이점을 갖는 다른 패턴 형성법을 유도하였다. 스크린 프린트법 외에도, 실시예 1의 재료를 사용해서, 패턴 형성용 잉크가 프린트용 판으로부터 유전성 언더프린트에 전달되고, 이어서 확산 및 현상되는 플렉서 패턴화법(flexoraphic patterning process)에 의한 패턴의 생성을 입증하였다. 플렉서 응용법의 가능한 처리 능력은 스크린 프린트법의 것보다 현저하게 크다. 스크린 프린트법에 의해서 전형적으로 1시간 당 약 2.58 내지 약 3.23㎡(4,000 내지 5,000in²)을 처리할 수 있으면, 그 처리 능력이 높다고 생각된다. 플렉서 시스템 또는 옵셋 시스템은 보다 선명한 해상도와 함께 분당 약 3.87 내지 약 12.90㎡(6,000 내지 20,000in²)의 확산 패턴화를 달성할 수 있다.This ability to pattern very thick layers using relatively thin prints has led to other pattern formation methods that have significantly greater processing capacity advantages over screen printing methods. In addition to the screen printing method, the material of Example 1 is used to generate the pattern by a flexoraphic patterning process in which the ink for pattern formation is transferred from the printing plate to the dielectric underprint, and then diffused and developed. Proved. The possible processing power of the flexure application is significantly greater than that of the screen printing method. If the screen printing method can process about 2.58 to about 3.23 m <2> (4,000-5,000 in <2>) per hour typically, it is thought that the processing capacity is high. The flexure system or offset system can achieve diffusion patterning of about 3.87 to about 12.90 m 2 (6,000 to 20,000 in 2) per minute with sharper resolution.
패턴 형성용 프린트의 다른 응용 방법에는, (1) 플로터 상에 펜으로 직접 기입하여, 삽화를 생성하거나 또는 기판을 노출시키는 일없이 원형(原型) 회로 기판을 제조하는 방법, (2) 시판 컴퓨터 프린터에서 볼 수 있는 것과 유사한 잉크 제트 프린트헤드(ink jet printhead)로 기입하는 방법, 및 (3) 언더프린트 상에 예컨대 레이저 프린터에 의해서 조화될 수 있는 상용성 가소제, 수지, 산 또는 염기 등의 고상 용해도 가변성제를 사용하는 방법이 있다.Other application methods of the pattern forming print include (1) a method of manufacturing a circular circuit board without writing an artwork or exposing the substrate by directly writing on a plotter with a pen, and (2) a commercial computer printer. Writing with an ink jet printhead similar to that seen in (3), and (3) solid solubility of compatible plasticizers, resins, acids or bases, such as compatible on an underprint, such as by a laser printer. There is a method using a variable agent.
본 발명의 처리 능력 이점을 충분히 활용하기 위해서는 언더프린트를 스크린 프린트법 이외의 다른 방법. 예를 들면 캐스트 테이프 형태에서와 같은 방법으로 도포하는 것이 바람직하다. 패턴화 부분의 현상은 시스템의 잔여부의 처리 능력을 동등하게 유지하기 위하여 배치 공정으로 이루어져야 하며, 또한 배치 공정에서는 생산 스케일을 조절할 수 있는 큰 가마에서 소성이 이루어져야 한다. 따라서, 고분자 기술 분야의 숙련자는 각각의 중합체 화학종이 다수의 상이한 유형의 가소제 또는 비휘발성 용매와 상용성임을 인식할 수 있을 것이다. 그 결과, 중합체/용매/비용매의 적합한 조합은 무수히 많이 있다. 다음에 열거한 예의 시판 중합체 및 가소제 및 용매/비용매 계는 본 발명을 실시하는데 사용할 수 있다.In order to take full advantage of the processing power advantages of the present invention, the method of underprinting is other than screen printing. It is preferred to apply in the same manner as for example in the form of cast tapes. The development of the patterned part must be carried out in a batch process in order to maintain the processing capacity of the remainder of the system equally, and the batch process must also be fired in a large kiln to control the production scale. Thus, those skilled in the polymer art will recognize that each polymer species is compatible with many different types of plasticizers or nonvolatile solvents. As a result, there are a myriad of suitable combinations of polymers / solvents / nonsolvents. The commercially available polymers and plasticizers and solvent / nonsolvent systems of the examples listed below can be used to practice the present invention.
D. 패턴화의 확산을 위한 중합체/가소제 조합물D. Polymer / Plastic Combination for Diffusion of Patterning
1. 셀룰로오스 아세테이트1. Cellulose Acetate
상용성 가소제에는 트리에틸 시트레이트, 아세틸 트리에틸 시트레이트, 에폭시형 가소제, 글리세롤 아세테이트(모노, 디, 트리), 디메틸 아디페이트, 트리데실 아디페이트, 디-n-헥실 아젤레이트, 에틸렌 글리콜디아세테이트, 디에틸렌 글리콜 에스테르 및 유도체, 트리에틸렌 글리콜 에스테르(예, 메틸, 에틸, 프로필, 부틸), 디-및 트리프로필렌 글리콜 에스테르가 있다. 또한, 장쇄형 탄화수소 및 방향족 탄화수소, 뉴욕주 뉴욕에 소재하는 도버 케미컬 캄파니(Dover Chemical Co.)사가 시판하는 염소화 파라핀, 트리크레실 포스페이트, 알킬 프탈레이트(디메틸 내지 디부틸), 디메틸 세바케이트 및 술폰산 유도체(예, o-및 p-톨루엔 술폰아미드)도 상용성 가소제이다.Compatible plasticizers include triethyl citrate, acetyl triethyl citrate, epoxy type plasticizers, glycerol acetates (mono, di, tri), dimethyl adipate, tridecyl adipate, di-n-hexyl azelate, ethylene glycol diacetate , Diethylene glycol esters and derivatives, triethylene glycol esters (eg methyl, ethyl, propyl, butyl), di- and tripropylene glycol esters. In addition, long chain hydrocarbons and aromatic hydrocarbons, chlorinated paraffins, tricresyl phosphates, alkyl phthalates (dimethyl to dibutyl), dimethyl sebacate and sulfonic acid sold by Dover Chemical Co., New York, NY Derivatives such as o- and p-toluene sulfonamides are also compatible plasticizers.
2. 셀룰로오스 아세테이트 부티레이트2. Cellulose Acetate Butyrate
상용성 가소제로는 시트르산 에스테르(에틸 내지 부틸), 아세틸 에폭시 스테아레이트, 글리세롤 디-및 트리아세테이트, 디메틸 및 디부틸 아디페이트, 트리데실 아디페이트, 디헥실 아디페이트, 디에틸렌 글리콜 디펠라르고네이트, 디프로필렌 글리콜 카프릴레이트 및 헵타노에이트, 탄화수소, 슈크로스 아세테이트 이소부티레이트, 디옥틸 이소프탈레이트, 글리세롤 모노라우레이트, 트리옥틸 트리멜리테이트, 트리이소데실 트리멜리테이트, 이소프로필 미리스테이트, n-부틸 미리스테이트, 부틸 올레에이트, 테트라히드로푸르푸릴 올레에이트, 염소화 파라핀 및 유도체, 디에틸렌 글리콜 디펠라르고네이트, 알킬 포스페이트(트리에틸 내지 트리부틸), 트리페닐 포스페이트, 트리 크레실 포스페이트, 트리이소프로필 페닐 포스페이트, 트리크실레닐 포스페이트, 프탈산 에스테르(디메틸 내지 디헥실), 혼합 알코올 프탈레이트(예, 부틸 벤질 프탈레이트, 부틸에틸헥실 프탈레이트 및 디시클로헥실 프탈레이트), 각종 폴리에스테르, 메틸 리시놀레에이트, 디메틸 세바케이트, 다수의 스테아르산 유도체(예, 알킬(프로필 내지 옥틸) 스테아레이트, 1,2-프로필렌 글리콜 모노스테아레이트) 및 디옥틸 테레프탈레이트가 있다.Compatible plasticizers include citric acid esters (ethyl to butyl), acetyl epoxy stearate, glycerol di- and triacetates, dimethyl and dibutyl adipate, tridecyl adipate, dihexyl adipate, diethylene glycol dipellagonate, di Propylene glycol caprylate and heptanoate, hydrocarbons, sucrose acetate isobutyrate, dioctyl isophthalate, glycerol monolaurate, trioctyl trimellitate, triisodecyl trimellitate, isopropyl myristate, n-butyl myriline States, butyl oleate, tetrahydrofurfuryl oleate, chlorinated paraffins and derivatives, diethylene glycol dipellagonate, alkyl phosphates (triethyl to tributyl), triphenyl phosphate, tricresyl phosphate, triisopropyl phenyl phosphate, Trixylenyl For Pate, phthalic esters (dimethyl to dihexyl), mixed alcohol phthalates (e.g. butyl benzyl phthalate, butylethylhexyl phthalate and dicyclohexyl phthalate), various polyesters, methyl ricinoleate, dimethyl sebacate, many stearic acid derivatives (Eg, alkyl (propyl to octyl) stearate, 1,2-propylene glycol monostearate) and dioctyl terephthalate.
3. 셀룰로오스 니트레이트3. Cellulose Nitrate
셀룰로오스 니트레이트는 이례적으로 대단히 많은 각종 가소제와 상용성이다. 그중 일부 가소제로는 아비에틴산의 산 에스테르(메틸 아비에테이트), 아세트산 에스테르(쿰페닐아세테이트), 아디프산 유도체(예, 벤질옥틸 아디페이트, 디이소데실 아디페이트, 트리데실 아디페이트), 아젤라산 에스테르(예, 디이소옥틸 아젤레이트), 디에틸렌 글리콜 디벤조에이트), 트리에틸렌 글리콜 디벤조에이트, 시트레이트(예, 트리에틸 시트레이트), 에폭시형 가소제, 폴리비닐 메틸 에테르, 글리세롤 모노-, 디-및 트리아세테이트, 에틸렌 글리콜 디아세테이트, 폴리에틸렌 글리콜 200 내지 1000, 프탈레이트 에스테르(디메틸 내지 디부틸), 이소프탈산 에스테르(디메틸, 디이소옥틸, 디-2-에틸헥실), 멜리테이트(예, 트리옥틸 트리멜리테이트, 이소옥틸이소데실 트리 멜리테이트), 이소프로필 미리스테이트, 메틸 및 프로필 올레에이트, 이소프로필 및 이소옥틸 팔미테이트, 염소화 파라핀, 인산 유도체(예, 트리에틸 포스페이트, 트리부틸 포스페이트, 트리부톡시에틸 포스페이트, 트리 페닐 포스페이트), 폴리에스테르, 디부틸 세바케이트, 디옥틸 세바케이트, 스테아레이트(예, 옥틸 스테아레이트, 부톡시에틸 스테아레이트, 테트라메틸렌 글리콜 모노스테아레이트), 슈크로스 유도체(예, 슈크로스 옥토아세테이트), 술폰산 유도체(예, 벤젠술폰메틸아미드) 또는 디옥틸 테레프탈레이트가 있다.Cellulose nitrate is exceptionally compatible with so many various plasticizers. Some of the plasticizers include acid esters of methyl abietin (methyl abietate), acetic acid esters (cumphenyl acetate), adipic acid derivatives (e.g. benzyloctyl adipate, diisodecyl adipate, tridecyl adipate), Azelaic acid esters (e.g. diisooctyl azelate), diethylene glycol dibenzoate), triethylene glycol dibenzoate, citrate (e.g. triethyl citrate), epoxy plasticizers, polyvinyl methyl ether, glycerol mono Di- and triacetates, ethylene glycol diacetates, polyethylene glycols 200-1000, phthalate esters (dimethyl to dibutyl), isophthalic esters (dimethyl, diisooctyl, di-2-ethylhexyl), melitates (e.g. , Trioctyl trimellitate, isooctylisodecyl trimellitate), isopropyl myristate, methyl and propyl oleate, isopropyl And isooctyl palmitate, chlorinated paraffins, phosphoric acid derivatives (eg triethyl phosphate, tributyl phosphate, tributoxyethyl phosphate, triphenyl phosphate), polyesters, dibutyl sebacate, dioctyl sebacate, stearates (eg , Octyl stearate, butoxyethyl stearate, tetramethylene glycol monostearate), sucrose derivatives (eg sucrose octoacetate), sulfonic acid derivatives (eg benzenesulfonmethylamide) or dioctyl terephthalate.
4. 에틸 셀룰로오스4. Ethyl Cellulose
셀룰로오스 니트레이트와 상용성인 대부분의 가소제는 또한 에틸 셀룰로오스와도 상용성이다. 따라서, 에틸 셀룰로오스는 다수의 가소제와 상용성이다. 그중 일부 가소제로는 아비에틴산의 산 에스테르(메틸 아비에테이트), 아세트산 에스테르(쿰페닐아세테이트), 아디프산 유도체(예, 벤질옥틸 아디페이트, 디이소데실 아디페이트, 트리데실 아디페이트), 아젤라산 에스테르(예, 디이소옥틸 아젤레이트), 디에틸렌 글리콜 디벤조에이트, 트리에틸렌 글리콜 디벤조에이트, 시트레이트(예, 트리에틸 시트레이트), 에폭시형 가소제, 폴리비닐 메틸 에테르, 글리세롤 모노-, 디-및 트리아세테이트, 에틸렌 글리콜 디아세테이트, 폴리에틸렌 글리콜 200 내지 1000, 프탈레이트 에스테르(디메틸 내지 디부틸), 이소프탈산 에스테르(디메틸, 디이소옥틸, 디-2-에틸헥실), 멜리테이트(예, 트리옥틸 트리멜리테이트, 이소옥틸이소데실 트리멜리테이트), 이소프로필 미리스테이트, 메틸 및 프로필 올레에이트, 이소프로필 및 이소옥틸 팔미테이트, 염소화 파라핀, 인산 유도체(예, 트리에틸 포스페이트, 트리부틸 포스페이트, 트리부톡시에틸 포스페이트, 트리페닐 포스페이트), 폴리에스테르, 디부틸 세바케이트 및 디옥틸 세바케이트, 스테아레이트(예, 옥틸 스테아레이트, 부톡시에틸 스테아레이트, 테트라메틸렌 글리콜 모노스테아레이트), 슈크로스 유도체(예, 슈크로스 옥토아세테이트), 술폰산 유도체(예, 벤젠술폰메틸아미드) 또는 디옥틸 테레프탈레이트가 있다.Most plasticizers that are compatible with cellulose nitrate are also compatible with ethyl cellulose. Thus, ethyl cellulose is compatible with many plasticizers. Some of the plasticizers include acid esters of methyl abietin (methyl abietate), acetic acid esters (cumphenyl acetate), adipic acid derivatives (e.g. benzyloctyl adipate, diisodecyl adipate, tridecyl adipate), Azelaic acid esters (e.g. diisooctyl azelate), diethylene glycol dibenzoate, triethylene glycol dibenzoate, citrate (e.g. triethyl citrate), epoxy plasticizers, polyvinyl methyl ether, glycerol mono- , Di- and triacetates, ethylene glycol diacetates, polyethylene glycol 200-1000, phthalate esters (dimethyl to dibutyl), isophthalic acid esters (dimethyl, diisooctyl, di-2-ethylhexyl), melitates (e.g. Trioctyl trimellitate, isooctylisodecyl trimellitate), isopropyl myristate, methyl and propyl oleate, isopropyl Isooctyl palmitate, chlorinated paraffin, phosphoric acid derivatives (e.g. triethyl phosphate, tributyl phosphate, tributoxyethyl phosphate, triphenyl phosphate), polyesters, dibutyl sebacate and dioctyl sebacate, stearates (e.g. Octyl stearate, butoxyethyl stearate, tetramethylene glycol monostearate), sucrose derivatives (eg sucrose octoacetate), sulfonic acid derivatives (eg benzenesulfonmethylamide) or dioctyl terephthalate.
5. 폴리스티렌5. Polystyrene
전형적인 가소제는, 메틸 아비에테이트, 수소화 메틸 아비에테이트, 벤질옥틸 아디페이트, 다수의 알킬 아디페이트(부틸 내지 데실 및 혼합 에스테르) ; 디-(2-에틸헥실) 아젤레이트 등의 아젤라산 에스테르 ; 디에틸렌 글리콜 디벤조에이트 등의 일부 벤조산 에스테르 ; 트리-n-부틸 시트레이트 등의 시트르산 유도체 ; 메틸 올레에이트 등의 올레산 에스테르 ; 염소화 파라핀 ; 트리부틸 포스페이트, 트리클레실 포스페이트 등의 알킬 및 아릴 포스페이트 ; 디메틸, 디프로필, 디부틸 또는 디옥틸 프탈레이트, 부틸 벤질 프탈레이트 및 기타 혼합 알킬 및 아릴 프탈레이트 등의 각종 프탈레이트 에스테르; 리시놀레산 및 세바신산 에스테르 ; n-부틸 스테아레이트 등의 일부 스테아레이트 에스테르 ; 폴리 알파 메틸스티렌 ; 및 디옥틸 테레프탈레이트이다.Typical plasticizers include methyl abietate, hydrogenated methyl abietate, benzyloctyl adipate, a plurality of alkyl adipates (butyl to decyl and mixed esters); Azelaic acid esters such as di- (2-ethylhexyl) azelate; Some benzoic acid esters such as diethylene glycol dibenzoate; Citric acid derivatives such as tri-n-butyl citrate; Oleic acid esters such as methyl oleate; Chlorinated paraffin; Alkyl and aryl phosphates such as tributyl phosphate and tricleyl phosphate; Various phthalate esters such as dimethyl, dipropyl, dibutyl or dioctyl phthalate, butyl benzyl phthalate and other mixed alkyl and aryl phthalates; Ricinoleic acid and sebacic acid ester; some stearate esters such as n-butyl stearate; Poly alpha methyl styrene; And dioctyl terephthalate.
6. 폴리(비닐 아세테이트)6. Poly (vinyl acetate)
가소제는, o-및 p-톨루엔 술폰아미드 등의 술폰산 유도체 ; 슈크로스 옥토아세테이트 등의 슈크로스 유도체 ; 글리세롤 트리아세톡시 스테아레이트 등의 일부 스테아레이트; 디벤질 세바케이트; 리시놀레산 에스테르; 폴리에스테르; 디부틸 및 부틸 벤질 프탈레이트 등의 일부 프탈레이트 에스테르; 트리부틸 또는 트리페닐포스페이트 등의 대부분의 인산 에스테르; 대부분의 염소화 파라핀; 글리세릴 모노올레이트; 디-n-부틸 말레에이트; 폴리에틸렌 글리콜, 디-(2-에틸헥소에이트) 등의 일부 글리콜 유도체 및 트리에틸 또는 트리-n-부틸 시트레이트 등의 시트르산 에스테르이다.Plasticizers include sulfonic acid derivatives such as o- and p-toluene sulfonamides; Sucrose derivatives such as sucrose octoacetate; Some stearates such as glycerol triacetoxy stearate; Dibenzyl sebacate; Ricinoleic acid ester; Polyester; Some phthalate esters such as dibutyl and butyl benzyl phthalate; Most phosphoric acid esters such as tributyl or triphenylphosphate; Most chlorinated paraffins; Glyceryl monooleate; Di-n-butyl maleate; Some glycol derivatives such as polyethylene glycol, di- (2-ethylhexate) and citric acid esters such as triethyl or tri-n-butyl citrate.
7. 폴리(비닐 부틸랄)7. Poly (vinyl Butyral)
메틸 아비에테이트, 쿰페닐 아세테이트, 디부틸 아디페이트, 디-(2-에틸헥실) 아디페이트; 또한, 트리데실 아디페이트, 디에틸렌 글리콜 디아디페이트, 폴리에틸렌 글리콜(200) 디벤조에이트, 수소화 테르페닐; 트리에틸 시트레이트, 트리-n-부틸 시트레이트, 트리에틸 시트레이트 등의 시트르산 알킬 에스테르; 에폭시화 대두유; 에폭시화 탈레이트 에스테르; 쿰페틸 벤질 에테르; 디프로필렌 글리콜 디카프릴레이트; 트리에틸렌 글리콜 트리펠라르고네이트; 소수의 탄화수소형 가소제; 디이소옥틸 이소프탈레이트; 글리세롤 모노라우레이트; 트리이소노닐 멜리테이트; n-프로필 올레에이트; 글리세롤 모노올레에이트; 다수의 염소화 파라핀; 펜타 에리트리톨 테트라이소펜타노에이트헵타노에이트; 알킬 포스페이트(트리부틸, 트리-2-에틸헥실, 트리페닐등), 트리스(클로로프로필)포스페이트, 디페닐 옥틸 포스페이트, 디페닐 크실레닐 포스페이트, 페닐 이소프로필 페닐 포스페이트 등의 다수의 포스페이트 에스테르; 또한, 디메틸, 디에틸, 디프로필, 디부틸, 부틸 벤질, 디옥틸 또는 디카프릴 프탈레이트, 혼합 프탈레이트, 디트리데실 프탈레이트 등의 다수의 프탈레이트 에스테르; 또한, 일부 메틸 아세틸 리시놀레에이트 등의 리시놀레산 에스테르, 글리세롤 트리-아세톡시 스테아레이트 등의 스테아르산 에스테르와 같은 폴리에스테르; 또한, o-및 p-톨루엔-에틸술폰아미드이다.Methyl abietate, cumphenyl acetate, dibutyl adipate, di- (2-ethylhexyl) adipate; Tridecyl adipate, diethylene glycol diadipate, polyethylene glycol (200) dibenzoate, hydrogenated terphenyl; Citric acid alkyl esters such as triethyl citrate, tri-n-butyl citrate and triethyl citrate; Epoxidized soybean oil; Epoxidized delate esters; Cumfetyl benzyl ether; Dipropylene glycol dicaprylate; Triethylene glycol tripellagonate; Few hydrocarbon type plasticizers; Diisooctyl isophthalate; Glycerol monolaurate; Triisononyl melittate; n-propyl oleate; Glycerol monooleate; Multiple chlorinated paraffins; Pentaerythritol tetraisopentanoateheptanoate; Many phosphate esters such as alkyl phosphate (tributyl, tri-2-ethylhexyl, triphenyl and the like), tris (chloropropyl) phosphate, diphenyl octyl phosphate, diphenyl xenyl phosphate, phenyl isopropyl phenyl phosphate; Furthermore, many phthalate esters, such as dimethyl, diethyl, dipropyl, dibutyl, butyl benzyl, dioctyl or dicapryl phthalate, mixed phthalate, ditridecyl phthalate; Furthermore, polyester, such as a ricinoleic acid ester, such as some methyl acetyl ricinoleate, and a stearic acid ester, such as glycerol tri-acetoxy stearate; And o- and p-toluene-ethylsulfonamides.
8. 폴리(비닐 클로라이드)8. Poly (vinyl chloride)
메틸 아비에테이트, 쿰페닐 아세테이트, 디부틸 아디페이트, 디-(2-에틸헥실)아디페이트; 또한, 트리데실 아디페이트; 디에틸렌 글리콜 디아디페이트; 폴리에틸렌 글리콜(200) 디벤조에이트; 수소화 테르페닐; 트리에틸 시트레이트, 트리-n-부틸 시트레이트, 트리에틸 시트레이트 등의 시트르산 알킬 에스테르, 에폭시화 대두유; 에폭시화 탈레이트 에스테르; 쿰페닐 벤질 에테르; 디프로필렌 글리콜 디카프릴레이트; 트리에틸렌 글리콜 트리펠라르고네이트; 소수의 탄화수소형 가소제; 디이소옥틸 이소프탈레이트; 글리세롤 모노라우레이트; 트리이소노닐 멜리테이트; n-프로필 올레에이트; 글리세롤 모노올레에이트; 다수의 염소화 파라핀; 펜타에리트리톨 테트라이소펜타노에이트헵타노에이트; 알킬 포스페이트(트리부틸, 트리-2-에틸헥실, 트리페닐 등), 트리스(클로로프로필) 포스페이트, 디페닐 옥틸 포스페이트, 디페닐-크실레닐 포스페이트, 페닐 이소프로필 페닐 포스페이트 등의 다수의 포스페이트 에스테르; 또한, 디메틸, 디에틸, 디프로필, 디부틸, 부틸 벤질, 디옥틸 또는 디카르릴 프탈레이트, 혼합된 프탈레이트, 디트리데실 프탈레이트 등의 다수의 프탈레이트 에스테르; 또한, 폴리에스테르; 메틸 아세틸 리시놀레에이트 등의 일부 리시놀레산 에스테르; 글리세롤 트리-아세톡시 스테아레이트 등의 스테아르산 에스테르; 또한, 그 밖의 많은 에폭시형 가소제; 또한, 폴리에틸렌 글리콜디-(2-에틸헥소에이트); 디부틸 세바케이트; 디옥틸-및 디노닐세바케이트; 및 디옥틸테레프탈레이트도 적합한 가소제이다.Methyl abietate, cumphenyl acetate, dibutyl adipate, di- (2-ethylhexyl) adipate; Tridecyl adipate; Diethylene glycol diadipate; Polyethylene glycol (200) dibenzoate; Hydrogenated terphenyl; Citric acid alkyl esters such as triethyl citrate, tri-n-butyl citrate and triethyl citrate, epoxidized soybean oil; Epoxidized delate esters; Cumphenyl benzyl ether; Dipropylene glycol dicaprylate; Triethylene glycol tripellagonate; Few hydrocarbon type plasticizers; Diisooctyl isophthalate; Glycerol monolaurate; Triisononyl melittate; n-propyl oleate; Glycerol monooleate; Multiple chlorinated paraffins; Pentaerythritol tetraisopentanoateheptanoate; Many phosphate esters such as alkyl phosphate (tributyl, tri-2-ethylhexyl, triphenyl, etc.), tris (chloropropyl) phosphate, diphenyl octyl phosphate, diphenyl-xylenyl phosphate, phenyl isopropyl phenyl phosphate; In addition, many phthalate esters such as dimethyl, diethyl, dipropyl, dibutyl, butyl benzyl, dioctyl or dicaryl phthalate, mixed phthalate, ditridecyl phthalate; In addition, polyester; Some ricinoleic acid esters such as methyl acetyl ricinoleate; Stearic acid esters such as glycerol tri-acetoxy stearate; In addition, many other epoxy plasticizers; Also, polyethylene glycol di- (2-ethylhexate); Dibutyl sebacate; Dioctyl- and dinonyl sebacate; And dioctyl terephthalate are also suitable plasticizers.
9. 비닐 클로라이드/비닐 아세테이트 공중합체9. Vinyl Chloride / Vinyl Acetate Copolymer
메틸 아비에테이트, 쿰페닐 아세테이트, 디부틸 아디페이트, 디-(2-에틸헥실) 아디페이트; 또한, 트리데실 아디페이트; 디에틸렌 글리콜 디아디페이트; 폴리에틸렌 글리콜(200) 디벤조에이트; 수소화 테르페닐; 트리에틸 시트레이트, 트리-n-부틸 시트레이트, 트리에틸 시트레이트 등의 시트르산 알킬 에스테르; 에폭시화 대두유; 에폭시화 탈레이트 에스테르; 쿰페닐 벤질 에테르; 디프로필렌 글리콜 디카프릴레이트; 트리에틸렌 글리콜 트리펠라르고네이트; 소수의 탄화수소형 가소제; 디이소옥틸 이소프탈레이트; 글리세롤 모노라우레이트; 트리이소노닐 멜리테이트; n-프로필 올레에이트; 글리세롤 모노올레에이트; 다수의 염소화 파라핀; 펜타 에디트리톨 테트라이소펜타노에이트헵타노에이트; 알킬 포스페이트(트리부틸, 트리-2-에틸헥실, 트리페닐등), 트리스(클로로프로필) 포스페이트, 디페놀 옥틸 포스페이트, 디페닐-크실레닐 포스페이트, 페닐 이소프로필 페닐 포스페이트 등의 다수의 포스페이트 에스테르, 또한, 디메틸, 디에틸, 디프로필, 디부틸, 부틸 벤질, 디옥틸 또는 디카프릴 프탈레이트, 혼합된 프탈레이트, 디트리데실 프탈레이트 등의 다수의 프탈레이트 에스테르; 또한, 폴리에스테르; 메틸 아세틸 리시놀레에이트 등의 일부 리시놀레산 에스테르; 글리세롤 트리-아세톡시 스테아레이트 등의 스테아르산 에스테르; 또한, 그 밖의 많은 에폭시형 가소제; 또한, 폴리에틸렌 글리콜 디-(2-에틸헥소에이트); 디부틸 세바케이트; 디옥틸-및 디노닐세바케이트; 및 디옥틸테레프탈레이트도 적합한 가소제이다.Methyl abietate, cumphenyl acetate, dibutyl adipate, di- (2-ethylhexyl) adipate; Tridecyl adipate; Diethylene glycol diadipate; Polyethylene glycol (200) dibenzoate; Hydrogenated terphenyl; Citric acid alkyl esters such as triethyl citrate, tri-n-butyl citrate and triethyl citrate; Epoxidized soybean oil; Epoxidized delate esters; Cumphenyl benzyl ether; Dipropylene glycol dicaprylate; Triethylene glycol tripellagonate; Few hydrocarbon type plasticizers; Diisooctyl isophthalate; Glycerol monolaurate; Triisononyl melittate; n-propyl oleate; Glycerol monooleate; Multiple chlorinated paraffins; Penta editoritol tetraisopentanoateheptanoate; Many phosphate esters such as alkyl phosphates (tributyl, tri-2-ethylhexyl, triphenyl, etc.), tris (chloropropyl) phosphate, diphenol octyl phosphate, diphenyl-xylenyl phosphate, phenyl isopropyl phenyl phosphate, In addition, many phthalate esters such as dimethyl, diethyl, dipropyl, dibutyl, butyl benzyl, dioctyl or dicapryl phthalate, mixed phthalate, ditridecyl phthalate; In addition, polyester; Some ricinoleic acid esters such as methyl acetyl ricinoleate; Stearic acid esters such as glycerol tri-acetoxy stearate; In addition, many other epoxy plasticizers; Also, polyethylene glycol di- (2-ethylhexate); Dibutyl sebacate; Dioctyl- and dinonyl sebacate; And dioctyl terephthalate are also suitable plasticizers.
10. 폴리메틸메타크릴레이트10. Polymethylmethacrylate
상용성 가소제는 메틸 아비에테이트, 캄포르, 쿰페닐 아세테이트, 옥틸 및 노닐 아디페이트, 디프로필렌 글리콜 디벤조에이트, 폴리에틸렌 글리콜(200) 디벤조에이트, 펜타에리트리톨 테트라벤조에이트, 디- 및 트리에틸렌 글리콜 에스테르, 일부 탄화수소형 가소제; 트리이소노닐 트리멜리테이트 등의 멜리트산 에스테르; 이소프로필 미리스테이트; 이소프로필 올레에이트; 에틸렌 글리콜 모노부틸 에테르 올레에이트; 염소화 파라핀; 트리에틸 및 트리부틸 포스페이트, t-부틸 디페닐 포스페이트, 트리크레실 포스페이트, 알킬 아릴 포스페이트 등의 인산 에스테르; 디부틸, 디프로필 또는 디헥실 프탈레이트 등의 다수의 프탈산 에스테르; 또한, 부틸 벤질 프탈레이트; 디옥틸 프탈레이트; 도데실 프탈레이트, 또는 도데실헥실 프탈레이트; 또한, 디부틸 또는 디옥틸 세바케이트; 기타 세바신산 에스테르; 슈크로스 벤조에이트; 및 디옥틸 테레프탈레이트 등의 테레프탈산 에스테르이다. 캄포르가 또한 유용한 가소제이다.Compatible plasticizers include methyl abietate, camphor, cumphenyl acetate, octyl and nonyl adipate, dipropylene glycol dibenzoate, polyethylene glycol (200) dibenzoate, pentaerythritol tetrabenzoate, di- and triethylene Glycol esters, some hydrocarbon type plasticizers; Melitric acid esters such as triisononyl trimellitate; Isopropyl myristate; Isopropyl oleate; Ethylene glycol monobutyl ether oleate; Chlorinated paraffins; Phosphoric acid esters such as triethyl and tributyl phosphate, t-butyl diphenyl phosphate, tricresyl phosphate and alkyl aryl phosphate; Many phthalic acid esters such as dibutyl, dipropyl or dihexyl phthalate; Butyl benzyl phthalate; Dioctyl phthalate; Dodecyl phthalate, or dodecylhexyl phthalate; In addition, dibutyl or dioctyl sebacate; Other sebacic acid esters; Sucrose benzoate; And terephthalic acid esters such as dioctyl terephthalate. Camphor is also a useful plasticizer.
E. 확산 패턴화를 위한 용매/비용매계E. Solvent / Non-solvent System for Diffusion Patterning
1. 셀룰로오스 아세테이트1. Cellulose Acetate
용매 :Solvent:
메틸렌 클로라이트/메탄올, 클로로포롬/메탄올, 벤질 알코올, 페놀, 에틸렌 글리콜 에테르, 디옥산, 디에탄올아민, 피리딘, 아닐린, 아세톤, 시클로헥사논, 포름산, 아세트산, 메틸 아세테이트, 에틸 아세테이트/니트로벤젠, 글리콜 모노에틸 에테르 아세테이트, 니트로메탄.Methylene chlorite / methanol, chloroformol / methanol, benzyl alcohol, phenol, ethylene glycol ether, dioxane, diethanolamine, pyridine, aniline, acetone, cyclohexanone, formic acid, acetic acid, methyl acetate, ethyl acetate / nitrobenzene, Glycol monoethyl ether acetate, nitromethane.
비용매 :Non-sold:
탄화수소, 지방족 에테르, 약 무기산.Hydrocarbons, aliphatic ethers, weak inorganic acids.
2. 셀룰로오스 아세테이트 부티레이트2. Cellulose Acetate Butyrate
용매 :Solvent:
벤젠, 톨루엔(고온), 클로로포름, 카본 테트라클로라이트, 테트라클로로에탄, 메탄올(고온), 아세톤, 시클로헥사논, 디옥산, 지방족 에스테르, 니트로에탄.Benzene, toluene (high temperature), chloroform, carbon tetrachlorite, tetrachloroethane, methanol (high temperature), acetone, cyclohexanone, dioxane, aliphatic ester, nitroethane.
비용매 :Non-sold:
지방족 탄화수소, 메탄올(냉온), 에탄올, 디에틸 에테르.Aliphatic hydrocarbons, methanol (cold), ethanol, diethyl ether.
3. 셀룰로오스 니트레이트3. Cellulose Nitrate
용매 : (N은 질소 함량을 나타냄)Solvent: (N represents nitrogen content)
N>10.5 및 <12% :N> 10.5 and <12%:
알콜(저급), 알콜/디에틸 에테르, 아세톤, 아밀 아세테이트, 에틸렌 글리콜 에테르, 아세트산(빙초산).Alcohol (lower), alcohol / diethyl ether, acetone, amyl acetate, ethylene glycol ether, acetic acid (glacial acetic acid).
N≥12% :N≥12%:
수소화 탄화수소, 에탄올/디에틸 에테르, 아세톤, 메틸 아밀 케톤, 시클로헥사논, 메틸 아세테이트, 에틸 아세테이트, 에틸 부티레이트, 에틸 락테이트, 에틸렌 글리콜 에테르 아세테이트, 에틸렌 카보네이트, 푸란 유도체, 니트로벤젠.Hydrogenated hydrocarbons, ethanol / diethyl ether, acetone, methyl amyl ketone, cyclohexanone, methyl acetate, ethyl acetate, ethyl butyrate, ethyl lactate, ethylene glycol ether acetate, ethylene carbonate, furan derivatives, nitrobenzene.
비용매 :Non-sold:
N>10.5 및 <12% :N> 10.5 and <12%:
고급 알콜, 고급 카르복실산, 고급 케톤, 트리크레실 포스페이트.Higher alcohols, higher carboxylic acids, higher ketones, tricresyl phosphate.
N≥12% :N≥12%:
지방족 탄화수소, 방향족 탄화수소, 저급 알콜, 고급 알콜(팽윤(sw)), 에틸렌 글리콜, 디에틸 에테르, 묽은 카르복실산, 물.Aliphatic hydrocarbons, aromatic hydrocarbons, lower alcohols, higher alcohols (swelling), ethylene glycol, diethyl ether, dilute carboxylic acid, water.
4. 에틸 셀룰로오스4. Ethyl Cellulose
용매 : (D.S.는 에톡실기에 의한 치환도를 나타냄)Solvent: (D.S. represents the degree of substitution by ethoxyl group)
D.S.=1.0 내지 1.5 :D.S. = 1.0 to 1.5:
피리딘, 포름산, 아세트산, 물(냉온).Pyridine, formic acid, acetic acid, water (cold temperature).
D.S.=2D.S. = 2
메틸렌 클로라이트, 클로로포름, 디클로로에틸렌, 클로로히드린, 에탄올, THF.Methylene chlorite, chloroform, dichloroethylene, chlorohydrin, ethanol, THF.
D.S.=2.3D.S. = 2.3
벤젠, 톨루엔, 알킬 할라이드, 알콜, 푸란 유도체, 케톤, 아세트산 에스테르, 카본 디술파이드, 니트로메탄.Benzene, toluene, alkyl halides, alcohols, furan derivatives, ketones, acetic esters, carbon disulfides, nitromethane.
D.S.=3.0D.S. = 3.0
벤젠, 톨루엔, 메틸렌 클로라이드, 알콜, 에스테르.Benzene, toluene, methylene chloride, alcohols, esters.
비용매 :Non-sold:
D.S.=1.0 내지 1.5 :D.S. = 1.0 to 1.5:
에탄올.ethanol.
D.S.=2.0D.S. = 2.0
탄화수소, 카본 테트라클로라이트, 트리클로로에틸렌, 알콜, 디에틸 에테르, 케톤, 에스테르, 물.Hydrocarbons, carbon tetrachlorite, trichloroethylene, alcohols, diethyl ether, ketones, esters, water.
D.S.=2.3D.S. = 2.3
에틸렌 글리콜, 아세톤(냉온).Ethylene glycol, acetone (cold temperature).
D.S.=3.0D.S. = 3.0
탄화수소, 데칼린, 크실렌, 카본 테트라클로라이드, 테트라히드로푸르푸릴 알콜, 디올, n-프로필 에테르.Hydrocarbons, decalin, xylene, carbon tetrachloride, tetrahydrofurfuryl alcohol, diols, n-propyl ethers.
5. 폴리스티렌5. Polystyrene
용매 :Solvent:
시클로헥산(>35℃), 시클로헥산/아세톤, 메틸시클로헥산/아세톤, 데카히드로나프탈렌/디에틸 옥살레이트, 벤젠, 톨루엔, 에틸벤젠, 스티렌, 저급 염소화 지방족 탄화수소, 페놀/아세톤, THF, 디메틸 테트라히드로푸란, 디옥산, 메틸 에틸 케톤, 디이소프로필 케톤, 시클로헥사논, 글리콜 포르말, 에틸 아세테이트, 부틸 아세테이트, 메틸-, 에틸-, n-부틸 프탈레이트, 1-니트로프로판, 카본 디술파이드, 트리부틸 포스페이트, 포스포러스 트리클로라이드.Cyclohexane (> 35 ° C), cyclohexane / acetone, methylcyclohexane / acetone, decahydronaphthalene / diethyl oxalate, benzene, toluene, ethylbenzene, styrene, lower chlorinated aliphatic hydrocarbons, phenol / acetone, THF, dimethyl tetra Hydrofuran, dioxane, methyl ethyl ketone, diisopropyl ketone, cyclohexanone, glycol formal, ethyl acetate, butyl acetate, methyl-, ethyl-, n-butyl phthalate, 1-nitropropane, carbon disulfide, tri Butyl phosphate, phosphorus trichloride.
비용매 :Non-sold:
포화 탄화수소, 알콜, 페놀, 디올, 에틸렌 클로로히드린, 퍼플루오로벤젠, 1,2,3, 4-테트라플루오로벤젠(<10℃), 디에틸 에테르, 글리콜 에테르, 아세톤, 아세트산, 이소부틸 프탈레이트, 메틸헥실 프탈레이트, 트리(클로로에틸) 포스페이트, 트리크레실 포스페이트.Saturated hydrocarbon, alcohol, phenol, diol, ethylene chlorohydrin, perfluorobenzene, 1,2,3,4-tetrafluorobenzene (<10 ° C), diethyl ether, glycol ether, acetone, acetic acid, isobutyl Phthalate, methylhexyl phthalate, tri (chloroethyl) phosphate, tricresyl phosphate.
6. 폴리(비닐 아세테이트)6. Poly (vinyl acetate)
용매 :Solvent:
벤젠, 톨루엔, 클로로포름, 카본 테트라클로라이드/에탄올, 디클로로에틸렌, 에탄올(20:80), 클로로벤젠, 메탄올, 에탄올/물, n-부탄올/물, 알릴 알콜, 2,4-디메틸-3-펜탄올, 벤질 알콜, 테트라히드로푸르푸릴 알콜, THF, 디메틸테트라히드로푸란, 디옥산, 글리콜 에테르, 글리콜 에테르 에스테르, 아세톤, 메틸 에틸 케톤, 아세트산, 저급 지방족 에스테르, 비닐 아세테이트, 아세탈, 아세토니트릴, 니트로메탄, DMF, DMSO, 클로로포름, 켈로벤젠.Benzene, toluene, chloroform, carbon tetrachloride / ethanol, dichloroethylene, ethanol (20:80), chlorobenzene, methanol, ethanol / water, n-butanol / water, allyl alcohol, 2,4-dimethyl-3-pentanol Benzyl alcohol, tetrahydrofurfuryl alcohol, THF, dimethyltetrahydrofuran, dioxane, glycol ether, glycol ether ester, acetone, methyl ethyl ketone, acetic acid, lower aliphatic ester, vinyl acetate, acetal, acetonitrile, nitromethane, DMF, DMSO, Chloroform, Kellobenzene.
비용매 : (sw는 팽윤을 나타냄)Non-solvent: (sw represents swelling)
포화 탄화수소, 크실렌(sw), 메시틸렌, 카본 테트라클로라이드(sw), 에탄올(무수, sw), 무수 알콜 C>1, 에틸렌 글리콜, 시클로헥산올, 메틸시클로헥산올, 디에틸 에테르(무수, 무알콜), 고급 에스테르 C>5, 카본 디술파이드, 물(sw), 묽은 산, 묽은 알칼리.Saturated hydrocarbon, xylene (sw), mesitylene, carbon tetrachloride (sw), ethanol (anhydrous, sw), anhydrous alcohol C> 1, ethylene glycol, cyclohexanol, methylcyclohexanol, diethyl ether (anhydrous, alcohol free ), Higher ester C> 5, carbon disulfide, water (sw), dilute acid, dilute alkali.
7. 폴리(비닐 부티랄)7. Poly (vinyl butyral)
용매 :Solvent:
아세탈화 70% :Acetalization 70%:
알콜, 시클로헥사논, 에틸 락테이트, 에틸렌 글리콜 아세테이트.Alcohols, cyclohexanone, ethyl lactate, ethylene glycol acetate.
아세탈화 77% :Acetalization 77%:
메틸렌 클로라이드, 알콜, 아세톤, 메틸 에틸 케톤, 시클로헥사논, 저급 에스테르, 메틸렌 클로라이드, 알콜, 케톤, 저급 에스테르.Methylene chloride, alcohol, acetone, methyl ethyl ketone, cyclohexanone, lower ester, methylene chloride, alcohol, ketone, lower ester.
아세탈화 83% :Acetalization 83%:
메틸렌 클로라이드, 알콜, 케톤, 저급 에스테르.Methylene chloride, alcohols, ketones, lower esters.
비용매 :Non-sold:
아세탈화 70% :Acetalization 70%:
지방족, 지환족 및 방향족 탄화수소(sw), 메틸렌 클로라이드, 지방족 케톤, 대부분의 에스테르, 물.Aliphatic, cycloaliphatic and aromatic hydrocarbons (sw), methylene chloride, aliphatic ketones, most esters, water.
아세탈화 77% :Acetalization 77%:
지방족, 지환족 및 방향족 탄화수소(sw), 메틸 이소부틸 케톤, 고급 에스테르.Aliphatic, cycloaliphatic and aromatic hydrocarbons (sw), methyl isobutyl ketone, higher esters.
아세탈화 83% :Acetalization 83%:
지방족, 지환족 및 방향족 탄화수소(sw), 메탄올, 고급 에스테르.Aliphatic, cycloaliphatic and aromatic hydrocarbons (sw), methanol, higher esters.
8. 폴리(비닐 클로라이드)8. Poly (vinyl chloride)
용매 :Solvent:
고분자량 :High molecular weight:
THF, 아세톤/카본 디술파이드, 메틸 에틸 케톤, 시클로펜타논, 시클로헥사논, DMF, 니트로벤젠, DMSO.THF, acetone / carbon disulfide, methyl ethyl ketone, cyclopentanone, cyclohexanone, DMF, nitrobenzene, DMSO.
저분자량 :Low molecular weight:
톨루엔, 크실렌, 메틸렌 클로라이드, 에틸렌 클로라이드, 퍼클로로 에틸렌/아세톤, 1,2-디클로로벤젠, 디옥산, 아세톤/카본 디술파이드, 시클로펜타논, 시클로헥사논, 디이소프로필케톤, 메시틸 옥사이드, 이소포론, DMF, 니트로벤젠, HMPT, 트리크레실 포스페이트.Toluene, xylene, methylene chloride, ethylene chloride, perchloro ethylene / acetone, 1,2-dichlorobenzene, dioxane, acetone / carbon disulfide, cyclopentanone, cyclohexanone, diisopropylketone, mesityl oxide, iso Poron, DMF, nitrobenzene, HMPT, tricresyl phosphate.
염소화, 63% Cl :Chlorination, 63% Cl:
방향족 탄화수소, 클로로포름, 클로로벤젠, THF, 디옥산, 아세톤, 시클로헥사논, 부틸 아세테이트, 니트로 벤젠, DMF, DMSO.Aromatic hydrocarbons, chloroform, chlorobenzene, THF, dioxane, acetone, cyclohexanone, butyl acetate, nitrobenzene, DMF, DMSO.
비용매 :Non-sold:
모든 분자량 :All molecular weights:
지방족 탄화수소, 광유, 방향족 탄화수소(sw), 비닐 클로라이드, 알콜, 글리콜, 아닐린(sw), 아세톤(sw), 카르복실산, 아세트산 무수물(sw), 에스테르, 니트로파라핀(sw), 카본 디술파이드, 비산화성 산, 알칼리.Aliphatic hydrocarbon, mineral oil, aromatic hydrocarbon (sw), vinyl chloride, alcohol, glycol, aniline (sw), acetone (sw), carboxylic acid, acetic anhydride (sw), ester, nitroparaffin (sw), carbon disulfide, Non-oxidizing acid, alkali.
염소화, 63% :Chlorination, 63%:
지방족 및 지환족 탄화수소, 카본 테트라클로라이드, 메틸 아세테이트, 니트로메탄, 유기 및 무기산.Aliphatic and cycloaliphatic hydrocarbons, carbon tetrachloride, methyl acetate, nitromethane, organic and inorganic acids.
9. 비닐 클로라이드/비닐 아세테이트 공중합체9. Vinyl Chloride / Vinyl Acetate Copolymer
용매 :Solvent:
클로로포름, 클로로벤젠, 피리딘, 디옥산, 시클로헥사논, 에틸 아세테이트.Chloroform, chlorobenzene, pyridine, dioxane, cyclohexanone, ethyl acetate.
비용매 :Non-sold:
벤젠, 알콜, 디에틸 에테르, 물.Benzene, alcohol, diethyl ether, water.
10. 폴리메틸메타크릴레이트10. Polymethylmethacrylate
용매 :Solvent:
디메틸 포름아미드, 메틸렌 클로라이드, 클로로포름, 에틸렌 디클로라이드, 트리클로로에틸렌, 클로로벤젠, 메틸 포르메이트, 에틸 아세테이트, 이소프로필 아세테이트, n-부틸 아세테이트, 부틸 락테이트, 셀로솔브 아세테이트, 1,4-디옥산, 테트라히드로푸란, 벤젠, 아세톤, 메틸 에틸 케톤, 아세토니트릴, 니트로메탄, 니트로에탄, 2-니트로프로판, 톨루엔, 디아세톤 알콜.Dimethyl formamide, methylene chloride, chloroform, ethylene dichloride, trichloroethylene, chlorobenzene, methyl formate, ethyl acetate, isopropyl acetate, n-butyl acetate, butyl lactate, cellosolve acetate, 1,4-dioxane , Tetrahydrofuran, benzene, acetone, methyl ethyl ketone, acetonitrile, nitromethane, nitroethane, 2-nitropropane, toluene, diacetone alcohol.
비용매 :Non-sold:
메틸, 에틸, 프로필, 아밀 알콜; 시클로헥산올; 에탄올 글리콜; 글리세롤; 또한, 포름아미드, 카본 테트라클로라이드; 디에틸 및 디이소프로필 에테르; FREON MF 및 TF; 헥산, 시클로헥산, 미네랄 스피리트; 투르펜틴; 디이소부틸 케톤; 시클로헥사논, 이소포론; 피마자유; 아마인유; 트리클로로에탄.Methyl, ethyl, propyl, amyl alcohol; Cyclohexanol; Ethanol glycol; Glycerol; In addition, formamide, carbon tetrachloride; Diethyl and diisopropyl ethers; FREON MF and TF; Hexane, cyclohexane, mineral spirits; Turpentin; Diisobutyl ketone; Cyclohexanone, isophorone; Castor oil; Linseed oil; Trichloroethane.
실시예 1Example 1
하나는 유전체 페이스트이고, 다른 하나는 패턴 형성용 페이스트인 2종의 페이스트를 다음과 같이 배합하여 생성하였다.Two kinds of pastes, one of which is a dielectric paste and the other of which is a pattern forming paste, are combined and produced as follows.
유리 A는 약 4 내지 4.5미크론의 D50을 가지며, 이를 밀링하고, 조립자 및 미립자 분획물은 분류하여 제거한다. 유리 A의 D10은 약 1.6미크론이고, 그의 D90은 10∼12미크론이다. 표면적은 1.5 내지 1.8㎡/g이다.Glass A has a D 50 of about 4 to 4.5 microns, which is milled and the coarse particles and particulate fractions are sorted out. D 10 of glass A is about 1.6 microns and its D 90 is 10 to 12 microns. The surface area is 1.5 to 1.8 m 2 / g.
유리 B는 유리 A의 큰 입경으로 인한 유전성 복합체의 하소 온도를 낮추는데 사용된 바륨 보로실리케이트 유리이다. 유리 B의 배합은 다음과 같다.Glass B is a barium borosilicate glass used to lower the calcination temperature of the dielectric composite due to the large particle diameter of glass A. The compounding of the glass B is as follows.
알루미나 A는 D10, D50및 D90이 각각 0.5, 1.1 및 2.7미크론인 좁은 입경 분포를 갖는 1미크론 분말이다.Alumina A is a 1 micron powder having a narrow particle size distribution in which D 10 , D 50 and D 90 are 0.5, 1.1 and 2.7 microns, respectively.
이를 침강에 의해 조립자 및 미립자를 분류하여 제거한다. 표면적은 약 2.7∼2.8㎡/g이다.This is sorted out and removed by sedimentation. The surface area is about 2.7-2.8 m 2 / g.
알루미나 B는 약 5㎡/g의 표면적을 갖는 평균 0.4미크론 입경의 분말이다.Alumina B is a powder of average 0.4 micron particle size with a surface area of about 5 m 2 / g.
상기 페이스트 조성물은 후막 재료의 배합에 있어서의 숙련자에게 공지된 방법으로 제조하였으며, 다음과 같은 프린팅을 위해 준비하였다.The paste composition was prepared by a method known to those skilled in the art of blending thick film materials, and prepared for printing as follows.
유전성 재료를 프린트하여 1,2 또는 3개의 프린트물을 만들고, 각각의 프린트물을 80∼90℃에서 10∼15분동안 건조 처리하였다. 이어서, 패턴 형성용 층을 몇몇 크기의 비아 개구부를 갖는 비아 필 스크린(via fill screen)을 사용해서 프린트하였다. 그런 다음, 패턴 형성용 페이스트를 80∼90℃에서 5∼10분간 건조하였다.The dielectric material was printed to make 1,2 or 3 prints and each print was dried at 80-90 ° C. for 10-15 minutes. The pattern forming layer was then printed using a via fill screen with via openings of some size. Then, the pattern forming paste was dried at 80 to 90 ° C. for 5 to 10 minutes.
이어서, 초음파 교반과 함께, 오버프린트 영역이 제거되고 오버프린트된 패턴 형성용 페이스트 아래의 영역이 용해되어 없어질 때까지 오버프린트 층을 1,1,1-트리클로로에탄 중에 함침시켜서 유전체에 패턴을 형성하였다.Subsequently, with ultrasonic agitation, the overprint layer is impregnated in 1,1,1-trichloroethane until the overprint region is removed and the region under the overprinted pattern forming paste is dissolved away. Formed.
약 0.013∼약 0.018cm(5∼7mil) 만큼의 작은 비아가 85미크론 만큼의 두꺼운 유전체 필름 중에서 양호한 연부 선명도로 해상되었다. 이는 스크린 프린트법에 의한 단일 패턴화 단계로 달성할 수 있는 것보다도 해상도 및 두께 면에서 훨씬 우수하다.Vias as small as about 0.013 to about 0.018 cm (5 to 7 mils) were resolved with good edge clarity in 85 micron thick dielectric films. This is much better in terms of resolution and thickness than can be achieved with a single patterning step by screen printing.
실시예 2Example 2
DP 조성물에서 가소제 수준의 조절Control of Plasticizer Levels in DP Compositions
보다 두꺼운 층을 패턴화시키고자 하는 경우에는 패턴화시키고자 하는 저부층에 가소제를 첨가하는 것이 종종 유리하다. 최적의 수준을 결정하기 위한 편리한 방법은 패턴화시키고자 하는 조성물에 서로 다른 농도의 가소제를 사용하여 농도 래더(ladder)를 만드는 것이다.In the case where a thicker layer is to be patterned, it is often advantageous to add a plasticizer to the bottom layer to be patterned. A convenient way to determine the optimal level is to create a concentration ladder using different concentrations of plasticizer in the composition to be patterned.
유전체 페이스트는 가소제를 사용하지 않고 실시예 1의 방법에서와 같이 배합하여 제조하였다. 이어서, 가소제 수준의 래더를 조정하여 배합을 최적화하였다. 결과는 다음과 같다.The dielectric paste was prepared by blending as in the method of Example 1 without using a plasticizer. The ladder at the plasticizer level was then adjusted to optimize formulation. The result is as follows.
[표 1]TABLE 1
페이스트를 실시예 1에서처럼 프린트하고 가공하여 최상의 조작 영역을 측정하였다. 최상의 영역은 2,5 내지 3.5%인 것으로 관측되었다. 그 배합 영역 내에서 두께 40∼50미크론의 필름이 충분히 가공처리될 수 있는 것으로 밝혀졌다. 조작 가능한 영역에서 비교적 고수준의 가소제는 현상 시간을 낮추고, 처리 능력을 증가시킨다.The paste was printed and processed as in Example 1 to determine the best operating area. The best area was observed to be 2,5 to 3.5%. It has been found that a film of 40-50 microns in thickness can be sufficiently processed in the compounding region. In the operable areas, relatively high levels of plasticizers lower development time and increase processing capacity.
실시예 3Example 3
도체 페이스트를 구리와 함께 다음과 같이 배합하여 생성하였다.The conductor paste was produced by combining with copper as follows.
구리 분말, (3∼4미크론)75.0그람Copper Powder, (3-4 Microns) 75.0 Grams
유리 분말 C5.0Glass powder C5.0
폴리메틸메타크릴레이트 엘바사이트 20106.1Polymethylmethacrylate Elbasite 20106.1
t-부틸안트라퀴논0.6t-butylanthraquinone0.6
쉘 이오놀0.1Shell Ionol0.1
부틸 카르비톨 아세테이트13.2Butyl Carbitol Acetate13.2
구리 페이스트를 상기 성분들로부터 후막 페이스트 배합에 있어서의 숙련자에게 공지된 방법으로 제조하고, 프린팅을 위해 준비하였다.Copper pastes were prepared from the above components by methods known to those skilled in the art of thick film paste formulation and prepared for printing.
도체 조성물의 피막을 325메쉬 스크린을 통하여 알루미나 기판상에 프린트하고, 네가티브형 스크린 프린트 도체 패턴을 실시예 1의 패턴 형성용 페이스트를 사용해서 구리 프린트의 상부에 프린트하였다. 모든 프린트를 85∼95℃에서 건조하였다. 이어서, 건조 부분을 클로로에탄 중에 함침시키고 15∼25초 간의 초음파 교반으로 목적한 패턴을 형성하였다. 그런 다음, 그 부분을 소성하여, 정밀한 약 0.010cm(4mil) 선/공간 패턴을 형성하였다. |소성|부분은|두께가 10∼12|미크론이었고, 비정항이|약 3mΩ/|이었다. 약 0.010cm(4mil) 선/공간 해상도는 3mΩ/ |를|갖는|패턴을|달성하기가|불가능하지는|않지만|어려웠다. 또한, 약 0.010cm(4mil) 선의 구조는 스크린 프린트 부분에 비해 더욱 정밀한 연부 선명도를 가졌으며, 도체 핑거(finger)의 상부의 표면을 편평하게 하였다. 약 0.007cm(3mil) 선은 언더프린트가 400메쉬 스크린을 통해서 도포되어 어느 정도 얇은 언더코우트(undercoat)를 수득할 때 해상되었다.The film of the conductor composition was printed on the alumina substrate through the 325 mesh screen, and the negative screen print conductor pattern was printed on the upper portion of the copper print using the pattern forming paste of Example 1. All prints were dried at 85-95 ° C. The dried portion was then impregnated in chloroethane and formed the desired pattern by ultrasonic agitation for 15-25 seconds. The part was then fired to form a precise about 0.010 cm (4 mil) line / space pattern. The | plastic | part was | thickness was 10-12 | micron, and the irregularity | about 3mPa / |. The about 0.010 cm (4 mil) line / space resolution was difficult to achieve, although not impossible, to achieve a pattern with 3 m 3 / Ω |. In addition, the structure of about 0.010 cm (4 mil) lines had more precise edge clarity than the screen print portion and flattened the upper surface of the conductor finger. About 0.007 cm (3 mil) lines were resolved when the underprint was applied through a 400 mesh screen to yield a somewhat thin undercoat.
실시예 4Example 4
상기 구리 도체와 유사한 도전성 및 두께를 갖는 금 도체 조성물을 다음과 같이 배합하여 생성하였다.A gold conductor composition having conductivity and thickness similar to that of the copper conductor was produced by combining as follows.
금 분말75.0그람Gold Powder75.0 Grams
구리 비스무테이트1.5Copper Bisate1.5
폴리메틸메타크릴레이트3.1Polymethylmethacrylate3.1
t-부틸안트라퀴논0.3t-butylanthraquinone0.3
부틸 카르비톨 아세테이트7.2Butyl Carbitol Acetate7.2
쉘 이오놀0.05Shell Ionol0.05
상기 성분들을 후막법에 있어서의 숙련자에게 공지된 통상의 방법으로 배합하여 금 도체 조성물을 제조하였다. 금 조성물을 32메쉬 스크린을 통해서 알루미나 기판상에 1회 도포로 프린트하고, 85∼95℃에서 건조시켰다. 이어서, 패턴 형성용 페이스트를 네가티브형 후막 도체 패턴으로 오버프린트하고, 다시 85∼95℃에서 건조시켰다.The above components were combined by conventional methods known to those skilled in the thick film method to prepare a gold conductor composition. The gold composition was printed by one application on an alumina substrate through a 32 mesh screen and dried at 85-95 ° C. Subsequently, the pattern forming paste was overprinted with a negative thick film conductor pattern and dried at 85 to 95 ° C.
실시예 5Example 5
포지티브 작용성 도체 페이스트계를 구리 중에서 다음과 같이 배합하여 생성하였다.A positive functional conductor paste system was produced by combining in copper as follows.
구리 페이스트를 상기 성분들로부터 후막 페이스트 배합에 있어서의 숙련자에게 공지된 방법으로 제조하고, 프린트를 준비하였다.Copper pastes were prepared from the above components by methods known to those skilled in the art of thick film paste formulation, and prints were prepared.
도체 조성물의 하나의 피막을 325메쉬 스크린을 통해 알루미나 기판상에 프린트하고, 이어서 네가티브형 스크린 프린트 도체 패턴을 이 실시예의 패턴 형성용 페이스트를 사용해서 구리 프린트의 상부에 프린트하였다. 모든 프린트는 85∼95℃에서 건조시켰다. 이어서, 건조 부분을 1% 탄산칼륨 수용액 중에 함침시키고, 5∼15초간 초음파 교반하여 목적한 패턴을 형성하였다. 정밀한 약 0.010cm(4mil) 선/공간 패턴이 형성되었다. 건조부분은 두께가 49미크론이었다. 또한, 약 0.010cm(4mil) 선은 스크린 프린트 부분보다도 정밀한 연부 선명도를 가졌다.One film of the conductor composition was printed on an alumina substrate through a 325 mesh screen, and then a negative screen print conductor pattern was printed on top of the copper print using the pattern forming paste of this example. All prints were dried at 85-95 ° C. The dried portion was then impregnated in a 1% potassium carbonate aqueous solution and ultrasonically stirred for 5 to 15 seconds to form the desired pattern. A precise approximately 0.010 cm (4 mil) line / space pattern was formed. The dry portion was 49 microns thick. In addition, about 0.010 cm (4 mil) lines had more precise edge clarity than the screen print portion.
실시예 6Example 6
플렉서 프린트법에 의한 확산 패턴화Diffusion Patterning by Flexure Printing
플렉서 프린트판 상에 선명하게 해상된 프린트 패턴을 다음과 같이 DP 유전성 배합물에 전달하였다.The clear resolved print pattern on the flexure plate was transferred to the DP dielectric blend as follows.
부틸 벤질 프탈레이트 가소제의 박막을 시험 패턴으로 상(image) 처리한 플렉서 프린트판 상에 분무하였다. 이어서 이 판을 건조 유전성 조성물로 피복한 세라믹 부분의 표면 상에 고르게 밀어서 폈다(실시예 1참조). 이 판으로부터 유전체에 이전된 가소제를 95℃의 오븐에서 5분간 건조시켜 유전체 내로 확산시켰다. 유전체의 상은 1,1, 1-트리클로로에탄 클로로텐을 함유하는 초음파조에서의 함침에 의해 현상되었다. 판으로부터의 패턴은 유전체에서 선명하게 드러났으며, 따라서 확산 패턴화 상을 형성하기 위한 가소제 석출의 다른 방법의 가능성을 입증하였다.A thin film of butyl benzyl phthalate plasticizer was sprayed onto the flexure print plate imaged in a test pattern. This plate was then pressed evenly on the surface of the ceramic portion coated with the dry dielectric composition (see Example 1). The plasticizer transferred from the plate to the dielectric was dried in an oven at 95 ° C. for 5 minutes to diffuse into the dielectric. The phase of the dielectric was developed by impregnation in an ultrasonic bath containing 1,1, 1-trichloroethane chlorotene. The pattern from the plate was clearly visible in the dielectric, thus demonstrating the possibility of other methods of plasticizer precipitation to form diffusion patterned images.
또한, 잉크 제트 레이저 프린터를 사용한 프린트법 또는 플로터 상의 펜에 의한 패턴 석출법과 같은 다른 상 형성법도 사용할 수 있다. 또한, 윤전 그라비아 또는 옵셋 인쇄법도 사용할 수 있다.In addition, other image forming methods such as a printing method using an ink jet laser printer or a pattern deposition method using a pen on a plotter can also be used. Rotogravure or offset printing may also be used.
선택 자재의 재료계Material system of the selected material
선택적 가용화 원리를 이용하여 후막 패턴을 형성하는 방법에는 여러가지가 있다. 이 패턴은 포지티브 또는 네가티브 작용을 할 수 있다. 즉, 오버프린트 아래의 영역이 실시예 1∼4에서 처럼 용해될 수 있거나 또는, 일례로 수용액으로 현상가능한 중합체를 불화합성 가소제로 오버프린트하여 바로 아래의 영역을 보호하고 이어서 가소화되지 않은 재료를 수용성 가용화에 의해 제거함으로써, 불용화될 수 있다.There are several ways to form the thick film pattern using the selective solubilization principle. This pattern can be positive or negative. That is, the area under the overprint may be dissolved as in Examples 1-4, or, for example, the polymer developable with an aqueous solution may be overprinted with an incompatible plasticizer to protect the area immediately below and subsequently to remove the unplasticized material. By removal by water solubilization, it can be insolubilized.
이하의 표는 본 발명의 방법에서 사용할 수 있다고 입증된 다수의 아크릴 중합체/가소제/용매계를 나타낸다.The table below shows a number of acrylic polymer / plasticizer / solvent systems that have been proven to be usable in the process of the present invention.
[표 2]TABLE 2
상기 수지들은 조합할 수 있다. 예를 들면, 메틸 및 에틸 메타크릴레이트를 조합하여 포지티브 또는 네가티브 작용성 레지스트를 생성할 수 있다. 메틸 메타크릴레이트/ 에틸 메타크릴레이트 조합의 경우에 있어서, 트리에틸렌 글리콜과 같은 가소제는 에탄올 패턴 형성용 용매 중에서 네가티브 작용성 레지스트를 생성한다.The resins can be combined. For example, methyl and ethyl methacrylate can be combined to produce a positive or negative functional resist. In the case of the methyl methacrylate / ethyl methacrylate combination, a plasticizer such as triethylene glycol produces a negative functional resist in a solvent for ethanol pattern formation.
폴리에스테르와 같이 과도하게 가교되지 않는 다른 수지계를 유사한 방법으로 패턴화시킬 수 있다. 다만, 가용화제 또는 불용화제 및 적합한 패턴 형성용 용매를 결정하는 일은 필요하다.Other resin systems that are not excessively crosslinked, such as polyester, can be patterned in a similar manner. However, it is necessary to determine the solubilizer or insolubilizer and a suitable solvent for pattern formation.
용해도 포락선이 고도로 가교화된 중합체에 전혀 존재하지 않으면, 그 중합체는 공정에 사용할 수 없다.If no solubility envelope is present in the highly crosslinked polymer, the polymer cannot be used in the process.
에폭시 수지 :Epoxy resin:
에폭시 수지를 갖는 포지티브 작용성 확산 패턴화계는 다음과 같이 만들 수 있다 : 프리폴리머를 예컨대, 비스페놀 A의 나트륨염과 에피클로로히드린의 축합 중합에 의해서 패턴화시키고자 하는 스크린 프린트된 인더프린트 피막 중의 수지로서 형성한다. 이 프리폴리머의 중합도는 약 12단위 이상이어야 한다.A positive functional diffusion patterning system with an epoxy resin can be made as follows: Resin in a screen printed inprint film to be prepatterned, for example by condensation polymerization of the sodium salt of bisphenol A with epichlorohydrin. To form. The degree of polymerization of this prepolymer should be at least about 12 units.
디에틸렌트리아민 또는 에틸렌디아민 또는 숙신산 이무수물 등의 가교용 아민 또는 다염기성 무수물을 오버프린트 페이스트에 첨가한다. 이어서, 오버프린트 페이스트를 언더프린트 상에 프린트한다. 그런 다음, 복합체를 경화시켜서 오버프린트된 아민 함유 페이스트 아래의 영역을 가교시켜서 불용화시키고, 잔류 물질은 트리클로로에탄과 같은 적합한 용매 중에서 세척해낸다.Crosslinking amines or polybasic anhydrides such as diethylenetriamine or ethylenediamine or succinic dianhydride are added to the overprint paste. The overprint paste is then printed on the underprint. The composite is then cured to insolubilize the area under the overprinted amine containing paste by insolubilization and the residual material is washed in a suitable solvent such as trichloroethane.
폴리이미드 :Polyimide:
네가티브 작용성 폴리이미드 확산 패턴화계는 예컨대, 피로멜리트산 이무수물(PMDA) 및 옥시디아닐린(ODA)를 함유하는 불완전 경화형계를 사용하여 제조할 수 있다. 불완전 경화형 중합체는 언더프린트로서 사용하며, 트리에탄올아민 또는 미립자상 탄산칼륨과 같은 염기를 함유하는 페이스트는 패턴화용 프린트로서 오버프린트한다. 이어서, 물 또는 약 염기 중에서 재료를 세척하여 오버프린트 아래의 영역을 제거한다.Negative functional polyimide diffusion patterning systems can be prepared using, for example, incompletely curable systems containing pyromellitic dianhydride (PMDA) and oxydianiline (ODA). Incompletely curable polymers are used as underprints, and pastes containing bases such as triethanolamine or particulate potassium carbonate are overprinted as prints for patterning. The material is then washed in water or about base to remove the area under the overprint.
다른 사용가능한 재료에는 히드록시에틸메타크릴레이트와 반응시킨 벤조페논 테트라카르복실산 이무수물이 있으며, 또한 시판되는 비페릴 이무수물/파라페닐렌디아민계도 적합하다. 미경화 상태에서 이들은 네가티브 작용 현상에 민감하다.Other usable materials include benzophenone tetracarboxylic dianhydride reacted with hydroxyethyl methacrylate, and commercially available biferyl dianhydride / paraphenylenediamine systems are also suitable. In the uncured state they are sensitive to negative action phenomena.
실시예 7Example 7
접촉 분해에 의한 확산 패턴화Diffusion Patterning by Contact Decomposition
유기 매질의 결합제 성분으로서 폴리메틸 메타크릴레이트를 사용하여 제1유전성 후막 페이스트를 배합하고, 결합제 성분으로서의 에틸 셀룰로오스 및 분해 촉매로서 작용하는 소량의 백금 아세틸 아세토네이트를 함유하는 상부(上敷) 후막 페이스트를 배합하였다. 이 제1페이스트를 80메쉬 스크린을 통해서 몇개의 알루미나 기판상에 프린트하여 두께 22미크론의 필름(소성 후)을 형성하고, 약 0.013 내지 약 0.076cm(5 내지 30mil) 범위의 비아 패턴을 갖는 시험 스크린으로 제1페이스트 상에 제2페이스트를 프린트하였다. 그런 다음, 프린트 층 어셈브리지를 240∼360℃ 범위의 다양한 온도에서 20분간 가열한 후 냉각시키고 각각의 어셈브리지를 수용성 스프레이로 세척하였다. 약 0.018cm(7mil) 비아가 해상되었다. 280 내지 320℃ 범위의 가열 처리로 필름 표면이 부식됨이 없이 가장 균일한 비아를 생성함을 발견하였다. 이 페이스트의 조성은 다음과 같다.The first dielectric thick film paste is blended using polymethyl methacrylate as the binder component of the organic medium, and the upper thick film paste containing ethyl cellulose as the binder component and a small amount of platinum acetyl acetonate acting as a decomposition catalyst is prepared. Blended. This first paste was printed on several alumina substrates through an 80 mesh screen to form a 22 micron thick film (after firing) and a test screen having a via pattern ranging from about 0.013 to about 0.076 cm (5 to 30 mil). The second paste was printed on the first paste. The print layer assembly was then heated for 20 minutes at various temperatures ranging from 240 to 360 ° C., then cooled and each assembly was washed with an aqueous spray. Approximately 0.018 cm (7 mil) vias were resolved. Heat treatments ranging from 280 to 320 ° C. have found that the film surface produces the most uniform vias without corrosion. The composition of this paste is as follows.
[표 3]TABLE 3
실시예 8 및 9Examples 8 and 9
수성 확산 패턴화Aqueous diffusion patterning
칼슘 아연 실리케이트 유리를 셀룰로오스계 비히클 및 3% 부틸 벤질 프탈레이트와 함께 배합하였다. 각각의 페이스트 필름을 알루미나 기판상에 프린트하고 95∼100℃에서 건조시켰다. 알루미나 7g, 테르지톨 TMN-6 3.5g, 테르핀올 이성질체 3.15g 및 에틸 셀룰로오스 0.35g을 함유하는 패턴 형성용 페이스트를 건조 유전성 페이스트 층 상에 프린트하고, 95∼100℃에서 가열하여 오버프린트 페이스트를 건조하고 테르지톨 세제를 하부 유전층에 확산시켰다. 건조층을 수돗물로 세척하였을 때 약 0.15cm(6mil) 비아가 선명하게 해상되었다. 일련의 시험에서 하부 중합체층에 대한 부가 가소제의 사용으로 해상도가 현저히 개선됨을 발견하였다.Calcium zinc silicate glass was combined with cellulosic vehicle and 3% butyl benzyl phthalate. Each paste film was printed on an alumina substrate and dried at 95-100 ° C. A pattern forming paste containing 7 g of alumina, 3.5 g of tergitol TMN-6, 3.15 g of terpinol isomers and 0.35 g of ethyl cellulose was printed on a dry dielectric paste layer and heated at 95 to 100 ° C. to dry the overprint paste. Tergitol detergent was then diffused into the lower dielectric layer. When the dry layer was washed with tap water, approximately 0.15 cm (6 mil) vias were clearly resolved. A series of tests found that the use of additive plasticizers for the lower polymer layer significantly improved the resolution.
실시예 10Example 10
이 실시예에서는 2개의 유전성 페이스트를 제조하고, 각각을 동일한 패턴 형성용 페이스트를 사용하는 알루미나 기판상에 일련의 패턴 형성용계를 제조하는데 사용하였다. 3개의 유전성 페이스트의 조성물은 상이하였는데, 유전성 페이스트 B는 부틸 벤질 프탈레이트를 함유하였고, 유전성 페이스트는 A는 휘발성이 강한 딥(dip)프탈레이트 가소제를 함유하였다.In this example, two dielectric pastes were prepared and each was used to produce a series of pattern forming systems on an alumina substrate using the same pattern forming paste. The compositions of the three dielectric pastes were different, dielectric paste B contained butyl benzyl phthalate and dielectric paste A containing a highly volatile dip phthalate plasticizer.
유전성 페이스트 A의 조성은 상기 실시예 7와 동일하였고, 유전성 페이스트 B의 조성은 가소제로서 휘발성이 더욱 강한 디프로필 프탈레이트를 디부틸 벤졸 프탈레이트 대신 사용한 것을 제외하고는 동일하였다. 패턴 형성용 페이스트의 조성은 백금 아세틸아세테이트를 함유시키지 않는 것을 제외하고는 실시예 7와 동일하였다.The composition of dielectric paste A was the same as that of Example 7, except that dipropyl phthalate, which is more volatile as a plasticizer, was used instead of dibutyl benzol phthalate. The composition of the pattern forming paste was the same as that in Example 7, except that platinum acetylacetate was not contained.
유전성 페이스트 모두를 약 0.015∼약 0.028cm(6∼11mil)의 개구부를 갖는 스크린을 통해서 프린트하고, 80∼85℃에서 12분 동안 건조시켰다. 그런 다음, 패턴 형성용 페이스트를 건조 유전층 상에 프린트하고, 95∼100℃로 10분 동안 가열하여 층을 건조시키고 가소제를 하부 유전층 내로 확산시켰다. 이어서, 어셈브리지를 클로로텐 스프레이로 10∼15초간 현상하고, 물로 세척한 다음, 에어 나이프(air knife)로 건조시켰다. 각각의 어셈브리지에 생성된 비아의 측정시, 휘발성이 더 강한 가소제를 함유하는 유전층으로부터의 비아는 균일하게 패턴 형성용층을 도포하는데 사용된 프리트용 스크린의 개구부와 거의 비슷한 크기임을 확인하였다.All of the dielectric paste was printed through a screen with openings of about 0.015 to about 0.028 cm (6 to 11 mils) and dried at 80 to 85 ° C. for 12 minutes. The pattern forming paste was then printed on the dry dielectric layer, heated to 95-100 ° C. for 10 minutes to dry the layer and to spread the plasticizer into the lower dielectric layer. The assembly was then developed for 10-15 seconds with a chlorotene spray, washed with water and then dried with an air knife. In measuring the vias created in each assembly, the vias from the dielectric layer containing the more volatile plasticizer were found to be approximately the same size as the openings of the frit screen used to apply the pattern forming layer uniformly.
[표 4]TABLE 4
용어 풀이Term Solving
카르비톨(Carbitol)Carbitol
유니온 카바이드 코포레이션(Union Carbide Corporation)사 제품(코넥티커트주 댄버리 소재)의 디에틸렌 글리콜 에틸 에테르에 대한 상표.Trademark for diethylene glycol ethyl ether from Union Carbide Corporation (Danbury, Connecticut).
카르보세트(Carboset)Carboset
비. 에프. 굳리치 앤드 캄파니(B. F. Goodrich Co.)사 제품(오하이오주 클리블랜드 소재)의 메틸메타크릴레이트 공중합체에 대한 상표.ratio. F. Trademark for methylmethacrylate copolymers from B. F. Goodrich Co., Cleveland, Ohio.
엘바사이트 2010(Elvacite 2010)Elvacite 2010
이. 아이. 듀우판 드 네모아 앤드 캄파니(E. I. du Pont de Nemours and Co.)사 제품(델라웨어주 윌밍톤 소재)의 메타크릴레이트 수지에 대한 상표.this. children. Trademark for methacrylate resins of E. I. du Pont de Nemours and Co., Wilmington, Delaware.
프레인 MF 및 TF(Freeon MF, TF)Plane MF and TF (Freeon MF, TF)
이. 아이. 듀우판 드 네모아 앤드 캄파니사 제품(델라웨어주 윌밍톤 소재)의 트리클로로플루오로메탄 및 트리클로로플루오로에탄에 대한 각각의 상표.this. children. Respective trademarks of Trichlorofluoromethane and Trichlorofluoroethane from Duupan de Nemoa & Company, Wilmington, Delaware.
이오놀(Ionol)Ionol
쉘 케미컬 코포레이션(Shell Chemical Co.)사 제품(텍사스주 휴스톤 소재)의 장해형 페놀 산화방지제에 대한 상표.Trademark for Hazardous Type Phenolic Antioxidants from Shell Chemical Co., Houston, Texas.
산티사이저(Santicizer)Santicizer
몬산토 케미컬 코포레이션(Monsanto Chemical Co.)사 제품(미조리주 세인트 루이스 소재)의 N-알킬-파라-톨루엔 술폰아미드 가소제에 대한 상표.Trademark for N-alkyl-para-toluene sulfonamide plasticizers from Monsanto Chemical Co. (St. Louis, MO).
T-200T-200
허큘레스, 인크. (Hercules, Inc)사 제품(델라웨어주 윌밍톤 소재)의 에틸셀룰로오스에 대한 상표.Hercules, Inc. Trademark for ethylcellulose from Hercules, Inc., Wilmington, Delaware.
테르지톨(Tergitol)Tergitol
유니온 카바이트 코포레이션사 제품(뉴욕주 뉴욕 소재)의 비이온성 계면활성제에 대한 상표.Trademark for nonionic surfactants from Union Carbide Corporation, New York, NY.
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US42538789A | 1989-10-20 | 1989-10-20 | |
US425,387 | 1989-10-20 | ||
US07/573,075 US5032216A (en) | 1989-10-20 | 1990-08-29 | Non-photographic method for patterning organic polymer films |
US573,075 | 1990-08-29 | ||
PCT/US1990/005664 WO1991006118A1 (en) | 1989-10-20 | 1990-10-11 | Non-photographic method for patterning organic polymer films |
US425387 | 1999-10-22 |
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US20040202955A1 (en) * | 2003-02-13 | 2004-10-14 | Goodin Jonathan W. | Method for making printing plate by inkjet deposition of coalescing agent |
EP2102144A4 (en) | 2006-09-13 | 2011-03-23 | Univ Rutgers | Active agents and their oligomers and polymers |
US9615463B2 (en) * | 2006-09-22 | 2017-04-04 | Oscar Khaselev | Method for producing a high-aspect ratio conductive pattern on a substrate |
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US10023521B2 (en) | 2014-06-13 | 2018-07-17 | Rutgers, The State University Of New Jersey | Process and intermediates for preparing poly(anhydride-esters) |
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DE2253944C2 (en) * | 1972-11-03 | 1983-02-24 | Agfa-Gevaert Ag, 5090 Leverkusen | Method for producing a relief image |
JPS5915394B2 (en) * | 1978-08-31 | 1984-04-09 | 富士通株式会社 | Thick film fine pattern generation method |
US4394211A (en) * | 1982-09-08 | 1983-07-19 | Fujitsu Limited | Method of manufacturing a semiconductor device having a layer of polymide resin |
GB8412606D0 (en) * | 1984-05-17 | 1984-06-20 | Murray J | Printed circuit boards |
IT1228144B (en) * | 1985-05-22 | 1991-05-28 | Face Standard Ind | PROCEDURE FOR THE MANUFACTURE OF MICROWAVE CIRCUITS IN J-BAND WITH MICROSTRUCTURE STRUCTURE IN THICK FILM AND RELATED PRODUCT |
US4751170A (en) * | 1985-07-26 | 1988-06-14 | Nippon Telegraph And Telephone Corporation | Silylation method onto surface of polymer membrane and pattern formation process by the utilization of silylation method |
US4808511A (en) * | 1987-05-19 | 1989-02-28 | International Business Machines Corporation | Vapor phase photoresist silylation process |
US4968552A (en) * | 1989-10-13 | 1990-11-06 | International Business Machines Corp. | Versatile reactive ion etch barriers from polyamic acid salts |
-
1990
- 1990-08-29 US US07/573,075 patent/US5032216A/en not_active Expired - Lifetime
- 1990-10-11 EP EP90917075A patent/EP0497896B1/en not_active Expired - Lifetime
- 1990-10-11 DE DE69030261T patent/DE69030261T2/en not_active Expired - Fee Related
- 1990-10-11 CA CA002069306A patent/CA2069306A1/en not_active Abandoned
- 1990-10-11 WO PCT/US1990/005664 patent/WO1991006118A1/en active IP Right Grant
- 1990-10-11 JP JP2515844A patent/JP2592548B2/en not_active Expired - Fee Related
- 1990-10-11 KR KR1019920700903A patent/KR960010009B1/en not_active IP Right Cessation
- 1990-10-19 MX MX022928A patent/MX167928B/en unknown
- 1990-10-19 MY MYPI90001831A patent/MY106618A/en unknown
- 1990-10-20 CN CN90109505A patent/CN1024980C/en not_active Expired - Fee Related
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JP2592548B2 (en) | 1997-03-19 |
CN1024980C (en) | 1994-06-08 |
MY106618A (en) | 1995-06-30 |
CA2069306A1 (en) | 1991-04-21 |
EP0497896B1 (en) | 1997-03-19 |
JPH05502140A (en) | 1993-04-15 |
MX167928B (en) | 1993-04-22 |
KR920702547A (en) | 1992-09-04 |
DE69030261D1 (en) | 1997-04-24 |
DE69030261T2 (en) | 1997-08-07 |
US5032216A (en) | 1991-07-16 |
WO1991006118A1 (en) | 1991-05-02 |
EP0497896A1 (en) | 1992-08-12 |
CN1053769A (en) | 1991-08-14 |
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