KR960009120A - Metal wiring formation method of semiconductor device - Google Patents

Metal wiring formation method of semiconductor device Download PDF

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Publication number
KR960009120A
KR960009120A KR1019940019535A KR19940019535A KR960009120A KR 960009120 A KR960009120 A KR 960009120A KR 1019940019535 A KR1019940019535 A KR 1019940019535A KR 19940019535 A KR19940019535 A KR 19940019535A KR 960009120 A KR960009120 A KR 960009120A
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KR
South Korea
Prior art keywords
film
forming
metal wiring
titanium
semiconductor device
Prior art date
Application number
KR1019940019535A
Other languages
Korean (ko)
Inventor
진성곤
김상용
신찬수
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940019535A priority Critical patent/KR960009120A/en
Publication of KR960009120A publication Critical patent/KR960009120A/en

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Abstract

본 발명은 장벽그속막 형성후 금속배선을 형성하는 장벽금속막을 포함하는 반도체 소자의 금속배선 형성방법에 관한 것으로, 장벽금속막 형성부위에 타타늄/질화티타늄막(23)을 리엑티브 스퍼터 기법으로 형성하는 단계; 0기를 갖는 기체 분위기 하에서 열처리 함으로써 티타늄-니트로젠-옥시젠막(TiNox막, 24)을 형성하는 단계; 티타늄-니트로젠-옥시젠막(24) 상부에 알루미늄 금속배선(5)을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 한다.The present invention relates to a method for forming a metal wiring of a semiconductor device including a barrier metal film to form a metal wiring after the formation of the barrier film. The titanium / titanium nitride film 23 is formed on the barrier metal film by a reactive sputtering technique. Forming; Forming a titanium-nitrogen-oxygen film (TiNox film, 24) by heat treatment under a gas atmosphere having 0 groups; It characterized in that it comprises the step of forming an aluminum metal wiring (5) on the titanium-nitrogen-oxygen film (24).

Description

반도체 소자의 금속배선 형성방법Metal wiring formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1A도 내지 제1C도는 본 발명에 따른 일실시예의 금속배선 형성 공정 단면도.1A to 1C are cross-sectional views of a metallization process of an embodiment according to the present invention.

Claims (2)

장벽금속막 형성후 금속배선을 형성하는 장벽금속막을 포함하는 반도체 소자의 금속배선 형성방법에 있어서, 장벽금속막 형성부위에 타타늄/질화티타늄막(23)을 리엑티브 스퍼터 기법으로 형성하는 단계; 0기를 갖는 기체 분위기 하에서 열처리 함으로써 티타늄-니트로젠-옥시젠막(TiNOx막, 24)을 형성하는 단계; 타타늄-니트로젠-옥시젠막(24) 상부에 알루미늄 금속배선(5)을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 금속배선 형성방법.A method of forming a metal wiring in a semiconductor device including a barrier metal film for forming metal wiring after the formation of the barrier metal film, the method comprising: forming a titanium / titanium nitride film (23) on the barrier metal film forming portion by a reactive sputtering technique; Forming a titanium-nitrogen-oxygen film (TiNOx film, 24) by heat treatment under a gas atmosphere having zero groups; Forming an aluminum metal wiring (5) on the titanium-nitrogen-oxygen film (24). 제1항에 있어서, 상기 열처리 단계는 450 내지 500℃ 온도범위의 O2또는 O3분위기에 하에에서 25 내지 40분간 이루어지는 것을 특징으로 하는 반도체 소자의 금속배선 형성방법.The method of claim 1, wherein the heat treatment is performed for 25 to 40 minutes under an O 2 or O 3 atmosphere in a temperature range of 450 to 500 ° C. 7. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940019535A 1994-08-08 1994-08-08 Metal wiring formation method of semiconductor device KR960009120A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940019535A KR960009120A (en) 1994-08-08 1994-08-08 Metal wiring formation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940019535A KR960009120A (en) 1994-08-08 1994-08-08 Metal wiring formation method of semiconductor device

Publications (1)

Publication Number Publication Date
KR960009120A true KR960009120A (en) 1996-03-22

Family

ID=66698113

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940019535A KR960009120A (en) 1994-08-08 1994-08-08 Metal wiring formation method of semiconductor device

Country Status (1)

Country Link
KR (1) KR960009120A (en)

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