KR960009120A - Metal wiring formation method of semiconductor device - Google Patents
Metal wiring formation method of semiconductor device Download PDFInfo
- Publication number
- KR960009120A KR960009120A KR1019940019535A KR19940019535A KR960009120A KR 960009120 A KR960009120 A KR 960009120A KR 1019940019535 A KR1019940019535 A KR 1019940019535A KR 19940019535 A KR19940019535 A KR 19940019535A KR 960009120 A KR960009120 A KR 960009120A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- forming
- metal wiring
- titanium
- semiconductor device
- Prior art date
Links
Abstract
본 발명은 장벽그속막 형성후 금속배선을 형성하는 장벽금속막을 포함하는 반도체 소자의 금속배선 형성방법에 관한 것으로, 장벽금속막 형성부위에 타타늄/질화티타늄막(23)을 리엑티브 스퍼터 기법으로 형성하는 단계; 0기를 갖는 기체 분위기 하에서 열처리 함으로써 티타늄-니트로젠-옥시젠막(TiNox막, 24)을 형성하는 단계; 티타늄-니트로젠-옥시젠막(24) 상부에 알루미늄 금속배선(5)을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 한다.The present invention relates to a method for forming a metal wiring of a semiconductor device including a barrier metal film to form a metal wiring after the formation of the barrier film. The titanium / titanium nitride film 23 is formed on the barrier metal film by a reactive sputtering technique. Forming; Forming a titanium-nitrogen-oxygen film (TiNox film, 24) by heat treatment under a gas atmosphere having 0 groups; It characterized in that it comprises the step of forming an aluminum metal wiring (5) on the titanium-nitrogen-oxygen film (24).
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1A도 내지 제1C도는 본 발명에 따른 일실시예의 금속배선 형성 공정 단면도.1A to 1C are cross-sectional views of a metallization process of an embodiment according to the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940019535A KR960009120A (en) | 1994-08-08 | 1994-08-08 | Metal wiring formation method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940019535A KR960009120A (en) | 1994-08-08 | 1994-08-08 | Metal wiring formation method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960009120A true KR960009120A (en) | 1996-03-22 |
Family
ID=66698113
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940019535A KR960009120A (en) | 1994-08-08 | 1994-08-08 | Metal wiring formation method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960009120A (en) |
-
1994
- 1994-08-08 KR KR1019940019535A patent/KR960009120A/en not_active Application Discontinuation
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