KR960007836A - Manufacturing apparatus and method of high-purity polycrystalline silicon rod for semiconductor - Google Patents

Manufacturing apparatus and method of high-purity polycrystalline silicon rod for semiconductor

Info

Publication number
KR960007836A
KR960007836A KR1019950027370A KR19950027370A KR960007836A KR 960007836 A KR960007836 A KR 960007836A KR 1019950027370 A KR1019950027370 A KR 1019950027370A KR 19950027370 A KR19950027370 A KR 19950027370A KR 960007836 A KR960007836 A KR 960007836A
Authority
KR
South Korea
Prior art keywords
semiconductor
manufacturing apparatus
polycrystalline silicon
silicon rod
purity polycrystalline
Prior art date
Application number
KR1019950027370A
Other languages
Korean (ko)
Other versions
KR100406389B1 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/296,964 external-priority patent/US5478396A/en
Application filed filed Critical
Publication of KR960007836A publication Critical patent/KR960007836A/en
Application granted granted Critical
Publication of KR100406389B1 publication Critical patent/KR100406389B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1019950027370A 1994-08-26 1995-08-26 Apparatus and Method for Manufacturing High Purity Polycrystalline Silicon Rod for Semiconductor Application KR100406389B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US296964 1989-01-13
US08/296,964 US5478396A (en) 1992-09-28 1994-08-26 Production of high-purity polycrystalline silicon rod for semiconductor applications

Publications (2)

Publication Number Publication Date
KR960007836A true KR960007836A (en) 1996-03-22
KR100406389B1 KR100406389B1 (en) 2004-03-06

Family

ID=23144295

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950027370A KR100406389B1 (en) 1994-08-26 1995-08-26 Apparatus and Method for Manufacturing High Purity Polycrystalline Silicon Rod for Semiconductor Application

Country Status (2)

Country Link
JP (2) JPH08169797A (en)
KR (1) KR100406389B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100768148B1 (en) * 2006-05-22 2007-10-17 한국화학연구원 Methods for preparation of high-purity poly-silicon rods using metallic core means

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5976481A (en) * 1996-05-21 1999-11-02 Tokuyama Corporation Polycrystal silicon rod and production process therefor
WO2005123583A1 (en) 2004-06-22 2005-12-29 Shin-Etsu Film Co., Ltd. Method for producing polycrystalline silicon and polycrystalline silicon for solar cell produced by the method
DE102009003368B3 (en) * 2009-01-22 2010-03-25 G+R Polysilicon Gmbh Reactor for the production of polycrystalline silicon after the monosilane process
CN102190305B (en) * 2010-03-15 2014-10-29 三菱综合材料株式会社 Apparatus for producing trichlorosilane
DE102010040093A1 (en) * 2010-09-01 2012-03-01 Wacker Chemie Ag Process for producing polycrystalline silicon
KR20120073658A (en) * 2010-12-27 2012-07-05 (주)세미머티리얼즈 Device for manufacturing polysilicon
KR101583721B1 (en) 2014-04-29 2016-01-08 주식회사 밸리스오토파츠 Apparatus for operating automobile spray chain
CN116854096B (en) * 2023-07-18 2024-05-07 上海韵申新能源科技有限公司 Reactor for producing high-purity polysilicon by silane method and process thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100768148B1 (en) * 2006-05-22 2007-10-17 한국화학연구원 Methods for preparation of high-purity poly-silicon rods using metallic core means

Also Published As

Publication number Publication date
KR100406389B1 (en) 2004-03-06
JPH08169797A (en) 1996-07-02
JP2006069888A (en) 2006-03-16

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