KR960007835A - Manufacturing method of blue luminescent gallium nitride laminated film - Google Patents

Manufacturing method of blue luminescent gallium nitride laminated film Download PDF

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KR960007835A
KR960007835A KR1019940020711A KR19940020711A KR960007835A KR 960007835 A KR960007835 A KR 960007835A KR 1019940020711 A KR1019940020711 A KR 1019940020711A KR 19940020711 A KR19940020711 A KR 19940020711A KR 960007835 A KR960007835 A KR 960007835A
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gallium nitride
laser beam
substrate
nitride
gallium
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KR1019940020711A
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이선숙
황진수
정필조
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강박광
재단법인 한국화학연구소
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Priority to KR1019940020711A priority Critical patent/KR960007835A/en
Priority to AU80380/94A priority patent/AU679277B2/en
Priority to DE4447177A priority patent/DE4447177A1/en
Priority to JP7015496A priority patent/JPH0878728A/en
Publication of KR960007835A publication Critical patent/KR960007835A/en

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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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Abstract

본 발명은 질화칼륨(Gallium Nitride, GaN)을 집광성 레이저광 여기(coherent laser aided vapour phase epitaxy, LVPE)방법에 의해 육방정계의 부루자이트(Wurtzite) 단결정 격자구조로 피복성장시키는 방법에 관한 것으로서 더욱 상세하게는 기판위에 질화알루미늄(Aluminum nitride, AIN)완충막을 인시츄(in-situ)방법에 의해 도입하고 갈륨 함유 반응물과 질소함유 반응물을 약 800℃의 낮은 온도와 0.1~3.8torr의 낮은 증기압하에서 공명적 에너지 광분해 증착법에 의해 단결정 두께 2~20μm를 갖는 청색 발광성 질화갈륨 적층막(epitaxial film)을 제조하는 방법에 관한 것이다.The present invention relates to a method of coating and growing potassium nitride (Gallium Nitride, GaN) into a hexagonal wurtzite single crystal lattice structure by a coherent laser aided vapor phase epitaxy (LVPE) method. More specifically, an aluminum nitride (AIN) buffer film is introduced on a substrate by an in-situ method, and gallium-containing reactants and nitrogen-containing reactants are introduced at a low temperature of about 800 ° C. and a low vapor pressure of 0.1 to 3.8 torr. The present invention relates to a method for producing a blue luminescent gallium nitride (Epitaxial film) having a single crystal thickness of 2 ~ 20μm by resonance energy photolysis deposition method.

Description

청색 발광성 질화갈륨 적층막의 제조방법Manufacturing method of blue luminescent gallium nitride laminated film

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 레이저 빔 조사방식의 개요도.1 is a schematic diagram of a laser beam irradiation method.

제2도는 본 발명에서 사용된 집광성 레이저 유도증측 실험장치의 개략도이다.2 is a schematic diagram of a light concentrating laser induced test apparatus used in the present invention.

Claims (13)

이종의 기판상에서 집광성 레이저 여기(LVPE)에 의해 Ⅲ족 갈륨과 Ⅴ족 질소로 구성된 질화갈륨을 적층막으로 성장시키는 방법에 있어서 사파이어 기판위에 질화알루미늄 완충막을 인시츄(in-situ)로 증착시키고 그 위에 반응물과 파장공명적 광화학 반응을 일으키는 레이저 빔을 조사하여 질화 갈륨 적층을 증착시키는 것을 특징으로 하는 질화갈륨 적층막의 제조방법.In a method of growing a gallium nitride composed of group III gallium and group V nitrogen in a laminated film by light-collecting laser excitation (LVPE) on a heterogeneous substrate, an aluminum nitride buffer film is deposited in-situ on a sapphire substrate. A method for producing a gallium nitride laminate film, characterized in that to deposit a gallium nitride layer by irradiating a laser beam causing a reactant and a wavelength resonance photochemical reaction thereon. 제1항에 있어서 상기 질화알루미늄은 200~300Å 두께로 증착시키는 것을 특징으로 하는 질화갈륨 적층막의 제조방법.The method of claim 1, wherein the aluminum nitride is deposited to a thickness of 200 to 300 kPa. 제1항에 있어서 상기 광화학 반응은 0.1~3.8torr, 800±100℃에서 15~60분동안 진행되는 것을 특징으로 하는 질화갈륨 적층막의 제조방법.The method of claim 1, wherein the photochemical reaction is performed at 0.1 to 3.8 torr for 15 to 60 minutes at 800 ± 100 ° C. 제1항에 있어서 상기 레이저 빔으로 193nmArF, 248nmKrF 또는 308nmXeCl 집광성 엑시머 레이저를 사용하는 것을 특징으로 하는 질화갈륨 적층막의 제조방법.The method of claim 1, wherein a 193nm ArF, 248nmKrF or 308nmXeCl light-concentrating excimer laser is used as the laser beam. 제1항에 있어서 상기 반응물은 삼메틸갈륨과 암모니아를 사용하는 것을 특징으로 하는 질화갈륨 적층막의 제조방법.The method of claim 1, wherein the reactant comprises trimethylgallium and ammonia. 제1항에 있어서 상기 사파이어 기판은 a(1120)이면 m(1110)면, c(001)면 R(1012)면 또는 이들면에 대해 3~10° 기울어진 단결정을 사용하는 것을 특징으로 하는 질화갈륨 적층막의 제조방법.The sapphire substrate according to claim 1, wherein the sapphire substrate is a (1120) nitride (m) (1110), c (001) plane R (1012) plane or a nitride characterized in that the inclined 3 to 10 ° with respect to these surfaces Method for producing a gallium laminated film. 제1항에 있어서 상기 질화알루미늄 완충막은 1100~1850℃ 온도에서 암모니아를 사용하며 제조되는 것을 특징으로 하는 질화갈륨 적층막의 제조방법.The method of claim 1, wherein the aluminum nitride buffer film is produced using ammonia at a temperature of 1100 ~ 1850 ℃. 제1항에 있어서 상기 레이저 빔은 기판표면에 평행하게 조사하는 것을 특징으로 하는 질화갈륨 적층막의 제조방법.The method of claim 1, wherein the laser beam is irradiated parallel to the substrate surface. 제1항에 있어서 상기 레이저 빔은 기판표면에 비스듬하게 조사하는 것을 특징으로 하는 질화갈륨 적층막의 제조방법.The method of claim 1, wherein the laser beam is irradiated obliquely to the surface of the substrate. 제1항에 있어서 상기 레이저 빔은 기판표면에 수직하게 조사하는 것을 특징으로 하는 질화갈륨 적층막의 제조방법.The method of claim 1, wherein the laser beam is irradiated perpendicularly to the substrate surface. 제1항에 있어서 상기 레이저 빔은 기판표면에 평행 그리고 수직하게 조사하는 것을 특징으로 하는 질화갈륨 적층막의 제조방법.The method of claim 1, wherein the laser beam is irradiated parallel and perpendicular to the surface of the substrate. 제1항의 조사방법에 따른 2~3μm 두께의 육각형 결정구조를 갖는 청색발광성 질화갈륨 적층막.A blue-emitting gallium nitride layered film having a hexagonal crystal structure of 2 to 3μm thickness according to the irradiation method of claim 1. 제12항에 있어서 상기 질화갈륨 적층막의 조성은 GamAlnNm(1-x)이고, 광증착된 표면층은 GamAlnNm(1-x)(이때, 0≤n≤m이고, 0≤x〈0.07)임.The composition of claim 12, wherein the gallium nitride layer has a composition of Ga m Al n N m (1-x) , and the photodeposited surface layer is Ga m Al n N m (1-x) , where 0≤n≤m , 0 ≦ x <0.07). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940020711A 1994-08-22 1994-08-22 Manufacturing method of blue luminescent gallium nitride laminated film KR960007835A (en)

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KR1019940020711A KR960007835A (en) 1994-08-22 1994-08-22 Manufacturing method of blue luminescent gallium nitride laminated film
AU80380/94A AU679277B2 (en) 1994-08-22 1994-12-13 A process for growth of gallium nitride
DE4447177A DE4447177A1 (en) 1994-08-22 1994-12-30 Blue-emitting gallium nitride epitaxial layer growth
JP7015496A JPH0878728A (en) 1994-08-22 1995-01-05 Growth of heteroepitaxial blue light-emitting gallium nitride

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KR100287362B1 (en) * 1997-11-21 2001-05-02 박호군 Pretreatment of single crystal ceramic surface by reactive ion irradiation and thin film growth on modified substrate

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JP3347002B2 (en) * 1996-11-08 2002-11-20 株式会社東芝 Method for manufacturing semiconductor light emitting device
JP2002374003A (en) * 2001-06-14 2002-12-26 Ngk Insulators Ltd Semiconductor device, and substrate for the same

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JP2631285B2 (en) * 1987-01-31 1997-07-16 豊田合成 株式会社 Gas phase growth method of gallium nitride based compound semiconductor
JP2829319B2 (en) * 1988-09-16 1998-11-25 豊田合成株式会社 Gallium nitride based compound semiconductor light emitting device
JP2704181B2 (en) * 1989-02-13 1998-01-26 日本電信電話株式会社 Method for growing compound semiconductor single crystal thin film
JP3026087B2 (en) * 1989-03-01 2000-03-27 豊田合成株式会社 Gas phase growth method of gallium nitride based compound semiconductor
JPH03183173A (en) * 1989-12-13 1991-08-09 Canon Inc Optical element
JPH04187597A (en) * 1990-11-22 1992-07-06 Matsushita Electric Ind Co Ltd Production of thin film of gallium nitride
JPH088217B2 (en) * 1991-01-31 1996-01-29 日亜化学工業株式会社 Crystal growth method for gallium nitride-based compound semiconductor

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KR100287362B1 (en) * 1997-11-21 2001-05-02 박호군 Pretreatment of single crystal ceramic surface by reactive ion irradiation and thin film growth on modified substrate

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