KR960007508A

KR960007508A - Manufacturing method of Cd (S, Se) photoconductive cell by sintering method

Info

Publication number: KR960007508A
Application number: KR1019940019822A
Authority: KR
Inventors: 신영진
Original assignee: 신영진
Priority date: 1994-08-11
Filing date: 1994-08-11
Publication date: 1996-03-22

Abstract

본 발명은 광전도 센서 소재로 사용되는 광전도 셀의 제조 방법에 관한 것으로, 특히 광전도 셀의 주요한 특성인 감도, 광전류 대 암전류의 비, 스펙트럼 응답, 최대허용소비전력 및 응답시간 특성을 높인 Cd(S, Se)(또는 CdS_xSe_1-x, 0≤x≤1)광전도 셀 제조방법에 관한 것이다.The present invention relates to a method for manufacturing a photoconductive cell used as a photoconductive sensor material. In particular, the Cd has improved the sensitivity, photocurrent to dark current, spectral response, maximum allowable power consumption, and response time, which are the main characteristics of the photoconductive cell. (S, Se) (or CdS _x Se _1-x , 0 ≦ _x ≦ ₁ ) relates to a photoconductive cell manufacturing method.

이를 위하여 유기용제(30cc)+CdCl₂(0.02-0.14mg)을 교반기로 충분히 섞어 혼합 용액을 제조하고, 입자의 크기가 ~300 mesh이고 순도가 5N인 CdS와 CdSe를 9:1, 8:2, 7:3, 6:4, 5:5의 무게비로 정량한 후, 혼합용액 0.25cc와 Cd(S, Se) 1g을 아개이트를 사용하여 균일하게 혼합된 페이스트를 제작하고, 세라믹 기판을 트리클로로에칠렌, 아세톤, 메탄올, 증류수 순으로 세척한 후 균일하게 혼합된 페이스트를 스크린 프린터를 사용하여 인쇄하고 드라이 오븐 속에서 120℃로 24시간 동안 건조하고, 상기와 같이 하여 건조된 막을 속의 석영관 안에 질소를 주입하면서 600℃에서 20~60분 동안 소결하여 소결막을 제작하고, 소결막 위에 인듐으로 전극을 진공증착하여 제작한다.To this end, an organic solvent (30 cc) + CdCl ₂ (0.02-0.14 mg) is sufficiently mixed with a stirrer to prepare a mixed solution, and CdS and CdSe having particles of ˜300 mesh and 5N purity of 9: 1, 8: 2 , 7: 3, 6: 4, 5: 5 and quantified in a weight ratio, 0.25cc mixed solution and 1g of Cd (S, Se) using agite to prepare a uniformly mixed paste, and to prepare a ceramic substrate After washing with trichloroethylene, acetone, methanol, and distilled water, the homogeneously mixed paste is printed using a screen printer and dried in a dry oven at 120 ° C. for 24 hours. Sintering film was prepared by sintering at 600 ° C. for 20 to 60 minutes while injecting nitrogen into it, and then vacuum depositing the electrode with indium on the sintered film.

Description

Cd (S, Se) photoconductive cell by sintering method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims

Mixed solution was prepared by thoroughly mixing the organic solvent (30cc) + CdCl ₂ (0.02-0.14mg) with a stirrer, and CdS and CdSe having particles of ˜300 mesh and 5N purity were 9: 1, 8: 2, 7 After weighing at a weight ratio of 3: 3, 6: 4, 5: 5, 0.25 cc of a mixed solution and 1 g of Cd (S, Se) were uniformly mixed using an agite to prepare a paste. After washing in the order of ethylene, acetone, methanol and distilled water, the uniformly mixed paste is printed using a screen printer, dried in a dry oven at 120 ° C. for 24 hours, and the dried film is dried in a quartz tube. A method of manufacturing a Cd (S, Se) photoconductive cell by a sintering method which is manufactured by sintering at 600 ° C. for 20 to 60 minutes while injecting, and vacuum depositing an electrode with indium on the sintering film.

※ Note: The disclosure is based on the initial application.