KR960006176A

KR960006176A - Semiconductor laser diode and manufacturing method thereof

Info

Publication number: KR960006176A
Application number: KR1019940018925A
Authority: KR
Inventors: 택 김
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1994-07-30
Filing date: 1994-07-30
Publication date: 1996-02-23
Also published as: KR100284765B1

Abstract

본 발명은 Ⅲ-Ⅴ족 화합물 반도체 레이저다이오드 및 그 제조방법에 관한 것으로, 특히 InGaP/InGaAlP로 구성된 단파장 반도체 레이저다이오드 및 그 제조방법에 관한 것이다.The present invention relates to a III-V compound semiconductor laser diode and a method for manufacturing the same, and more particularly, to a short wavelength semiconductor laser diode composed of InGaP / InGaAlP and a method for manufacturing the same.

즉, 본 발명에 따른 반도체 레이저다이오드는 GaAs기판을 식각하여 리지를 형성하고, 이 리지의 양측에 GaAs전류 차단층을 적층하므로, 재성장시 산화의 염려가 없어 소자의 안정성이 확보되고, 또한 2차 에피택시 성장으로 소자가 완성되므로 성장 공정이 간단하며, 실효 굴절율 광 도파를 하므로 기본 모드 레이저 발진에 유리하여 비점수차가 작은 레이저빔을 얻을 수 있는 장점이 있다.That is, the semiconductor laser diode according to the present invention forms a ridge by etching a GaAs substrate, and a GaAs current blocking layer is laminated on both sides of the ridge, so that there is no fear of oxidation during regrowth, thereby ensuring stability of the device and further improving the secondary structure. Since the device is completed by epitaxy growth, the growth process is simple, and since the effective refractive index optical waveguide is advantageous, the laser beam having a small astigmatism can be obtained in favor of the basic mode laser oscillation.

Description

Semiconductor laser diode and manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 내지 제7도는 본 발명에 따른 반도체 레이저 다이오드의 제조단계별 수직 단면도로서,2 to 7 are vertical cross-sectional views of manufacturing steps of the semiconductor laser diode according to the present invention.

제2도는 기판 상면에 SiO₂층을 형성한 후의 수직 단면도이고,2 is a vertical cross-sectional view after forming a SiO ₂ layer on the upper surface of the substrate,

제3도는 SiO₂층을 식각하여 마스크를 형성하고, 이 마스크를 이용하여 기판을 식각한 후의 수직 단면도이고,3 is a vertical cross-sectional view after etching the SiO ₂ layer to form a mask, and etching the substrate using the mask,

제4도는 기판의 식각된 부분에 전류 차단층을 선택적으로 성장시킨 후의 수직 단면도이고,4 is a vertical cross-sectional view after selectively growing a current blocking layer in the etched portion of the substrate,

제5도는 SiO₂마스크를 제거한 후의 수직 단면도이고,5 is a vertical cross-sectional view after removing the SiO ₂ mask,

제6도는 전류 차단층 및 기판 상면에 통전 용이층, 하부 크래드층, 활성층, 하부 크래드층 및 캡층을 순차로 2차 성장시킨 후의 수직단면도이고,FIG. 6 is a vertical cross-sectional view after secondary growth of the current carrying layer, the lower cladding layer, the active layer, the lower cladding layer, and the cap layer sequentially on the current blocking layer and the upper surface of the substrate;

제7도는 금속 전극을 증착시켜 소자를 완성한 후의 수직 단면도이다.7 is a vertical cross-sectional view after depositing a metal electrode to complete the device.

Claims

A p-GaAs substrate having an inverse mesa-type ridge formed on its central upper surface, an n-GaAs current blocking layer laminated on both sides of the ridge of the substrate in the shape of a hairpin, the current blocking layer on both sides and a flat bottom surface on the ridge top surface of the substrate, respectively P-InGaP conducting easy layer laminated to have a bent portion having a, p-InGaAlP lower clad layer laminated to have a bent portion of the same shape as the easy conducting layer on the upper surface of the easy conduction layer, the upper surface of the lower clad layer An undoped-InGaP active layer formed to have a bent portion like the lower cladding layer, an n-InGaAlP upper clad layer formed to have a bent portion shaped like the active layer on an upper surface of the active layer, and an upper surface of the upper clad layer A semiconductor laser diode comprising a p-GaAs cap layer stacked on the top thereof.

The semiconductor laser diode of claim 1, wherein a strip direction of the ridge structure of the substrate is in a [110] direction.

growing a SiO ₂ film on an upper surface of a p-GaAs substrate, a first etching step of etching both sides such that a central portion of the SiO ₂ film is formed into a strip shape having a predetermined width, and using the stripped SiO ₂ film as a mask A second etching step of etching both sides of the substrate to form a reverse mesa-shaped ridge on the upper surface of the substrate, the first growth to selectively grow the n-GaAs current blocking layer on both sides of the rich of the substrate using the SiO ₂ mask A third etching step of removing the SiO ₂ mask, a p-InGaP passivation layer, a p-InGaAlP lower clad layer, an undoped-InGaP active layer, and an n-InGaAlP upper part on the current blocking layer and the rich upper surface of the substrate; A method of manufacturing a semiconductor laser diode comprising a second growth step of sequentially growing a clad layer and a p-GaAs cap layer.

The method of claim 3, wherein the first etching step and the second etching step are performed by a photolithography process.

4. The semiconductor laser diode of claim 3, wherein the SiO ₂ strip direction and the strip direction of the ridge structure of the substrate are formed in a [110] direction.

※ Note: The disclosure is based on the initial application.