KR960006174A - Semiconductor laser diode manufacturing method - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor laser diode, and to fabricate a laser diode structure that simultaneously generates light having a vibration mode and light having a single mode and high power in one laser diode. The present invention provides a method of forming a current limiting layer on a substrate, and selectively etching the current limiting layer to form first and second grooves having different widths and depths on both sides of the substrate and having upper portions narrower than lower portions. Forming a double heterostructure on the current confined layer in which the first and second trenches are formed, selectively etching the double heterostructure, and two spaced apart at regular intervals in a direction perpendicular to the first and second trenches. Providing a method of manufacturing a semiconductor laser diode comprising forming a third trench, forming reflective films on both sides between the two third trenches, and forming electrodes on the upper surface of the double heterostructure and the rear surface of the substrate, respectively. A laser diode structure having different characteristics on one chip is used to perform playback and recording with a single laser diode. This allows the system to be reduced in size and improved in efficiency, and to allow light to travel in a direction perpendicular to the substrate surface to facilitate integration with other devices.

Description

Semiconductor laser diode manufacturing method

As this is a public information case, the full text was not included.

1 is a process flowchart showing a conventional method of manufacturing a laser diode.

2 is a process flowchart showing a method for manufacturing a semiconductor laser diode according to the present invention.

Claims (4)

Forming a current limiting layer on the substrate, and selectively etching the current limiting layer to form first and second grooves having different widths and depths on both sides of the substrate and having upper portions narrower than lower portions, respectively; Forming a double heterostructure on the current limiting layer in which the first and second trenches are formed, and selectively etching the double heterostructure to form two third trenches spaced at regular intervals in a direction perpendicular to the first and second trenches Forming a reflective film on both side surfaces between the two third trenches, and forming electrodes on the upper surface of the double heterostructure and the rear surface of the substrate, respectively. According to claim 1, wherein the first groove is about 4㎛ the width of the upper portion and the depth of about 1.2㎛, the second groove is about 6㎛ and the depth of about 1.1㎛ the upper portion of the first groove A method of manufacturing a semiconductor laser diode, wherein a portion of the current limiting layer between the second trench and the second trench is formed to remain about 15 µm. The method of claim 1, wherein the double heterostructure is formed by sequentially stacking a P-type cladding layer, a P-type active layer, an n-type cladding layer, and an n-type cap layer. The method of claim 1, wherein the third trench is formed so that a gap between two trenches is located above a portion of an unetched current limiting layer between the first and second trenches. ※ Note: The disclosure is based on the initial application.