KR960036223A - Semiconductor laser - Google Patents

Semiconductor laser Download PDF

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Publication number
KR960036223A
KR960036223A KR1019950005637A KR19950005637A KR960036223A KR 960036223 A KR960036223 A KR 960036223A KR 1019950005637 A KR1019950005637 A KR 1019950005637A KR 19950005637 A KR19950005637 A KR 19950005637A KR 960036223 A KR960036223 A KR 960036223A
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KR
South Korea
Prior art keywords
gain region
conductive type
semiconductor laser
linear gain
active layer
Prior art date
Application number
KR1019950005637A
Other languages
Korean (ko)
Other versions
KR100364772B1 (en
Inventor
최성천
Original Assignee
구자홍
엘지전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 구자홍, 엘지전자 주식회사 filed Critical 구자홍
Priority to KR1019950005637A priority Critical patent/KR100364772B1/en
Publication of KR960036223A publication Critical patent/KR960036223A/en
Application granted granted Critical
Publication of KR100364772B1 publication Critical patent/KR100364772B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08018—Mode suppression
    • H01S3/08022—Longitudinal modes
    • H01S3/08027—Longitudinal modes by a filter, e.g. a Fabry-Perot filter is used for wavelength setting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)

Abstract

본 발명은 반도체 레이저에 관한 것으로, 페이브리-페롯 레이저에 원형의 이득 영역을 추가함으로써 고출력 단일모드동작이 가능하도록 한 것이다.TECHNICAL FIELD The present invention relates to a semiconductor laser, in which high power single mode operation is enabled by adding a circular gain region to a Fabry-Perot laser.

본 발명은 제1도전형의 기판과; 상기 제1도전형의 기판상에 형성된 제1도전형의 클래드층; 상기 제1도전형의 클래드층상에 형성된 직선형 이득영역과 적어도 1개 이상의 원형 이득영역으로 이루어진 활성층; 및 상기 제1도전형의 클래드층 및 상기 활성층 상부에 형성된 제2도전형의 클래드층을 포함하여 이루어진 반도체 레이저를 제공한다.The present invention provides a substrate of a first conductivity type; A cladding layer of a first conductive type formed on said first conductive type substrate; An active layer comprising a linear gain region and at least one circular gain region formed on the clad layer of the first conductive type; And a clad layer of the second conductive type formed on the clad layer of the first conductive type and the active layer.

Description

반도체 레이저Semiconductor laser

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명에 의한 반도체 레이저의 이득영역을 나타낸 평면도, 제4도는 본 발명에 의한 반도체 레이저의 이득영역 및 전극영역을 나타낸 평면도, 제5도는 본 발명의 일실시예에 의한 반도체 레이저 제조방법에 도시한 공정순서도.3 is a plan view showing a gain region of a semiconductor laser according to the present invention, FIG. 4 is a plan view showing a gain region and an electrode region of a semiconductor laser according to the present invention, and FIG. 5 is a method of manufacturing a semiconductor laser according to an embodiment of the present invention. The process flow chart shown in.

Claims (5)

제1도전형의 기판과; 상기 제1도전형의 기판상에 형성된 제1도전형의 클래드층; 상기 제1도전형의 클래드층상에 형성된 직선형 이득영역과 적어도 1개 이상의 원형 이득영역으로 이루어진 활성층; 및 상기 제1도전형의 클래드층 및 상기 활성층 상부에 형성된 제2도전형의 클래드층을 포함하여 이루어진 것을 특징으로 하는 반도체 레이저.A first conductive type substrate; A cladding layer of a first conductive type formed on said first conductive type substrate; An active layer comprising a linear gain region and at least one circular gain region formed on the clad layer of the first conductive type; And a clad layer of the second conductive type formed on the clad layer of the first conductive type and the active layer. 제1항에 있어서, 상기 활성층은 직선형 이득영역과 직선형 이득영역의 중심 부분에서 직선형 이득영역과 중첩되는 하나의 원형 이득영역으로 이루어진 구조로 된 것을 특징으로 하는 반도체 레이저.The semiconductor laser according to claim 1, wherein the active layer has a structure comprising a linear gain region and a circular gain region overlapping the linear gain region at a center portion of the linear gain region. 제1항에 있어서, 상기 활성층은 직선형 이득영역과 직선형 이득영역의 중심 부분에서 직선형 이득영역과 중첩되는 직선형 이득영역 양쪽에 각각 형성된 원형 이득영역으로 이루어진 구조로 된 것을 특징으로 하는 반도체 레이저.The semiconductor laser according to claim 1, wherein the active layer has a structure comprising a circular gain region formed in both of the linear gain region and the linear gain region overlapping the linear gain region at the center of the linear gain region. 제3항에 있어서, 상기 직선형 이득영역 양쪽의 원형 이득영역이 서로 비대칭 또는 대칭을 이루는 것을 특징으로 하는 반도체 레이저.4. The semiconductor laser according to claim 3, wherein circular gain regions of both linear gain regions are asymmetrical or symmetrical to each other. 제1항에 있어서, 상기 활성층은 양자우물로 구성됨을 특징으로 하는 반도체 레이저.The semiconductor laser according to claim 1, wherein the active layer is composed of a quantum well. ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is to be disclosed based on the initial application.
KR1019950005637A 1995-03-17 1995-03-17 Semiconductor laser KR100364772B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950005637A KR100364772B1 (en) 1995-03-17 1995-03-17 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950005637A KR100364772B1 (en) 1995-03-17 1995-03-17 Semiconductor laser

Publications (2)

Publication Number Publication Date
KR960036223A true KR960036223A (en) 1996-10-28
KR100364772B1 KR100364772B1 (en) 2003-03-03

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950005637A KR100364772B1 (en) 1995-03-17 1995-03-17 Semiconductor laser

Country Status (1)

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Publication number Publication date
KR100364772B1 (en) 2003-03-03

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