KR960005735A - Display device using semiconductor light emitting device - Google Patents

Display device using semiconductor light emitting device Download PDF

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Publication number
KR960005735A
KR960005735A KR1019940018091A KR19940018091A KR960005735A KR 960005735 A KR960005735 A KR 960005735A KR 1019940018091 A KR1019940018091 A KR 1019940018091A KR 19940018091 A KR19940018091 A KR 19940018091A KR 960005735 A KR960005735 A KR 960005735A
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KR
South Korea
Prior art keywords
light emitting
zns
display device
semiconductor light
phosphor
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KR1019940018091A
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Korean (ko)
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KR100291911B1 (en
Inventor
박창원
정좌영
유용찬
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윤종용
삼성전관 주식회사
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Priority to KR1019940018091A priority Critical patent/KR100291911B1/en
Publication of KR960005735A publication Critical patent/KR960005735A/en
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Publication of KR100291911B1 publication Critical patent/KR100291911B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)

Abstract

신규한 구조의 표시소자가 개시되어 있다. 본 발명에 의한 표시소자는, 자외선 내지 심청색 영역의 광을 방사하며, p형 및 n형 전극이 매트릭스 형태로 형성되어 있는 반도체 발광소자와, 자외선 내지 심청색의 광에 의해 여기되는 형광체를 함유하는 형광막이 구비된 것으로, 원하는 부위의 p-n접합에 순방향의 전압을 인가하여 자외선 내지 심청색의 광이 방사되고 이에 따라 형광체가 여기됨으로써 영상을 표시하게 된다. 기존의 평탄 표시소자에비해 고해상도의 영상 정보를 표시할 수 있다.A display device having a novel structure is disclosed. The display device according to the present invention includes a semiconductor light emitting device that emits light in an ultraviolet to deep blue region, in which p-type and n-type electrodes are formed in a matrix form, and a phosphor excited by ultraviolet-to-deep blue light. A fluorescent film is provided, and a forward voltage is applied to a pn junction of a desired portion to emit ultraviolet to deep blue light, thereby exciting the phosphor to display an image. Higher resolution image information can be displayed than conventional flat display devices.

Description

반도체 발광소자를 이용한 표시소자Display device using semiconductor light emitting device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명에 의한 표시소자의 개략적인 사시도이다.1 is a schematic perspective view of a display device according to the present invention.

Claims (8)

자외선 내지 심청색 영역의 광을 방사하며, p형 및 n형 전극이 매트릭스 형태로 형성되어 있는 반도체 발광소자; 및 자외선 내지 심청색의 광에 의해 여기되는 형광체를 함유하는 형광막이 구비된 표시소자.A semiconductor light emitting device that emits light in an ultraviolet to deep blue region and has p-type and n-type electrodes formed in a matrix form; And a fluorescent film containing a phosphor excited by ultraviolet to deep blue light. 제1항에 있어서, 상기 반도체 발광소자가 발광 다이오드 또는 레이저 다이오드인 것을 특징으로 하는 표시소자.The display device of claim 1, wherein the semiconductor light emitting device is a light emitting diode or a laser diode. 제1항에 있어서, 상기 자외선 내지 심청색 영역의 광은 주 피크(peak)가 254~420㎚의 영역에 있는 광인 것을 특징으로 하는The light of the ultraviolet to deep blue region is characterized in that the main peak (peak) in the region of 254 ~ 420nm 제1항에 있어서, 상기 형광체가, 적색으로는 Y2O2S : Eu,Y2O3: Eu,Zn, SrSㆍSrSO4 ㆍCaF2: Sm, (ZnㆍCd)S : Ag, YVO4: Eu, Zn3(PO4)2: Mn및 MgO ㆍMgF2ㆍGeO2 :Mn의 군에서 선택된 어느 하나를 사용하고, 청색으로는 ZnS : Ag,Cl,ZnS : Ag,Al,Zn(SㆍSe) : Ag, Al, ZnS : Zn, LaOBr : Cl, CaS ㆍNa2SO4 :CaF, SrSiO3 :Eu, BaMg2Al16O27: Eu, SrMgAl10O17: Eu, Sr10(PO4)6Cl2: Eu, Sr2P2O7: Eu 및 Ba3MgSi2O8: Eu 의 군에서 선택된 어느 하나를 사용하며, 녹색으로는 ZnS : Cu,ZnS : Cu,Al,ZnS :Cu, Al, ZnS : Cu, Au, Al, (ZnㆍCd)S : Ag,(ZnㆍCd)S :Cu, Al, Sr(S ㆍSe)SrSO4: Ca, La2O2S:Tb, Y2O2S : Tb, Y3Al5O12: Tb, LaOCl :Tb, Zn2SiO4: Mn, MgS : Sb,및 (SrㆍCa ㆍBa)10(PO4)6Cl2:Eu 의 군에서 선택된 어느 하나를 사용하는 것을 특징으로 하는 표시소자.The method of claim 1, wherein the phosphor is Y 2 O 2 S: Eu, Y 2 O 3 : Eu, Zn, SrS.SrSO 4 .CaF 2 : Sm, (Zn.Cd) S: Ag, YVO. 4: Eu, Zn 3 (PO 4) 2: Mn , and MgO and MgF 2 and GeO 2: using any one selected from the group of Mn, and the blue are ZnS: Ag, Cl, ZnS: Ag, Al, Zn ( S.Se): Ag, Al, ZnS: Zn, LaOBr: Cl, CaSNa 2 SO 4: CaF, SrSiO 3: Eu, BaMg 2 Al 16 O 27 : Eu, SrMgAl 10 O 17 : Eu, Sr 10 ( PO 4 ) 6 Cl 2 : Eu, Sr 2 P 2 O 7 : Eu and Ba 3 MgSi 2 O 8 : Any one selected from the group of Eu is used, green is ZnS: Cu , ZnS: Cu, Al, ZnS : Cu, Al, ZnS: Cu, Au, Al, (ZnCd) S: Ag, (ZnCd) S: Cu, Al, Sr (SSe) SrSO 4 : Ca, La 2 O 2 S: Tb, Y 2 O 2 S: Tb, Y 3 Al 5 O 12 : Tb, LaOCl: Tb, Zn 2 SiO 4 : Mn, MgS: Sb, and (SrCaBa) 10 (PO 4 ) 6 Cl 2 : Display element characterized by using any one selected from the group of Eu. 제1항에 있어서, 상기 형광체는 안료 부착형 형광체인 것을 특징으로 하는 표시소자.The display device according to claim 1, wherein the phosphor is a pigment attached phosphor. 제1항에 있어서, 상기 형광막에 형성된 1개의 형광체 도트나 스트라이프에 일치하도록 상기 반도체 발광소자의 발광지역수를 조절하는 것을 특징으로 하는 표시소자.The display device according to claim 1, wherein the number of light emitting regions of the semiconductor light emitting element is adjusted to match one phosphor dot or stripe formed on the fluorescent film. 제1항에 있어서, 상기 형광막에 형성된 도트 또는 스트라이프의 폭이 상기 반도체 발광소자의 수개 내지 수십개의 발광지역에 일치하도록 조절하는 것을 특징으로 하는 표시소자.The display device of claim 1, wherein the width of the dot or stripe formed in the fluorescent film is adjusted to correspond to several to several tens of light emitting regions of the semiconductor light emitting device. 제1항에 있어서, 상기 반도체 발광소자의 각 발광지역이 분리된 것을 특징으로 하는 표시소자.The display device of claim 1, wherein each of the light emitting regions of the semiconductor light emitting device is separated. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940018091A 1994-07-26 1994-07-26 Display using semiconductor light emitting device KR100291911B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940018091A KR100291911B1 (en) 1994-07-26 1994-07-26 Display using semiconductor light emitting device

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KR1019940018091A KR100291911B1 (en) 1994-07-26 1994-07-26 Display using semiconductor light emitting device

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KR960005735A true KR960005735A (en) 1996-02-23
KR100291911B1 KR100291911B1 (en) 2001-09-17

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990034461A (en) * 1997-10-29 1999-05-15 엄길용 Flat panel display element
KR100467670B1 (en) * 1997-03-31 2005-06-17 삼성에스디아이 주식회사 Green phosphor
JP2005252293A (en) * 1996-06-26 2005-09-15 Siemens Ag Semiconductor light emitting element
DE19655445B3 (en) * 1996-09-20 2016-09-22 Osram Gmbh White light-emitting semiconductor component with luminescence conversion layer and use of such semiconductor components

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19638667C2 (en) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mixed-color light-emitting semiconductor component with luminescence conversion element

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4830469A (en) * 1987-02-13 1989-05-16 U.S. Philips Corporation Liquid crystalline color display cell having a phosphorescent substrate and U.V.-absorbing dichroic dye
KR910006705B1 (en) * 1988-11-17 1991-08-31 삼성전자 주식회사 Light emitted diode array and its manufacturing method
JPH0770757B2 (en) * 1989-10-17 1995-07-31 株式会社東芝 Semiconductor light emitting element
JPH0512988A (en) * 1990-10-13 1993-01-22 Canon Inc Semiconductor electron emitting element
US5453386A (en) * 1994-05-09 1995-09-26 Motorola, Inc. Method of fabrication of implanted LED array

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005252293A (en) * 1996-06-26 2005-09-15 Siemens Ag Semiconductor light emitting element
DE19655445B3 (en) * 1996-09-20 2016-09-22 Osram Gmbh White light-emitting semiconductor component with luminescence conversion layer and use of such semiconductor components
KR100467670B1 (en) * 1997-03-31 2005-06-17 삼성에스디아이 주식회사 Green phosphor
KR19990034461A (en) * 1997-10-29 1999-05-15 엄길용 Flat panel display element

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