KR19990034461A - Flat panel display element - Google Patents
Flat panel display element Download PDFInfo
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- KR19990034461A KR19990034461A KR1019970056069A KR19970056069A KR19990034461A KR 19990034461 A KR19990034461 A KR 19990034461A KR 1019970056069 A KR1019970056069 A KR 1019970056069A KR 19970056069 A KR19970056069 A KR 19970056069A KR 19990034461 A KR19990034461 A KR 19990034461A
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- 239000000758 substrate Substances 0.000 claims description 27
- 239000010410 layer Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- 239000011159 matrix material Substances 0.000 claims description 6
- 239000000049 pigment Substances 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 4
- 230000005284 excitation Effects 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 239000012530 fluid Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000002346 layers by function Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004040 coloring Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 238000005304 joining Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
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- 239000011593 sulfur Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
본 발명은 신규한 구성의 평판표시소자를 개시한다.The present invention discloses a flat panel display device having a novel configuration.
LCD는 소비전력이 작으나 비발광형이며 PDP는 소비전력이 커 휴대장치 구성이 불가능하고, FED등을 포함하여 모두 유체분위기를 요구하여 취급이 곤란하였다. LED는 소비전력이 작고 발광휘도가 높으며 유체분위기가 불필요하나 공간효율이 불량하여 고해상도 표시장치 구성이 불가능하였다.LCD has low power consumption but non-light emitting type, and PDP has high power consumption, making it impossible to configure portable devices, and it is difficult to handle because it requires fluid atmosphere including FED. LED has low power consumption, high luminous intensity, and no need for fluid atmosphere.
본 발명에서는 LED와 같은 원리의 발광 pn 접합을 행열상으로 배열하여 매트릭스형의 2군으로 선택전극으로 선택발광시키도록 하거나, 전면적인 pn 접합을 선택발광시켜 형광층을 통해 발광색을 재현하도록 함으로써 저구동전압 및 저 소비전력으로 휴대가 가능하며 고휘도를 달성하고 취급이 용이한 평판표시소자를 제공한다.In the present invention, the light emitting pn junction of the same principle as the LED is arranged in a row so as to selectively emit light to the selection electrode in a matrix-type 2 group, or to selectively emit light of the entire pn junction to reproduce the emission color through the fluorescent layer. The present invention provides a flat panel display device that is portable with a driving voltage and low power consumption, achieves high brightness, and is easy to handle.
Description
본 발명은 신규한 구성의 평판표시소자(FPD: Flat Panel Display)에 관한 것이다.The present invention relates to a flat panel display (FPD) having a novel configuration.
전자기기의 경박단소화에 따라 최근 각광을 받고 있는 평판표시소자는 여러 가지 종류가 있는 바, 가장 널리 사용되고 있는 것은 도 1(A)에 도시된 LCD이다.There are various types of flat panel display devices that have recently been in the spotlight according to the light and short size of electronic devices, and the most widely used are the LCDs shown in FIG.
도 1(A)에서 LCD의 두 기판(P1, P2)에는 전극(E1, E2)이 교차대향 배열되고, 그 사이에 배향막(A1, A2)으로 정렬된 액정(Q)이 주입되어 전극(E1, E2)의 선택에 따라 광투과 특성이 변화되는데, 기판(P1, P2)의 외측에 부착한 편광판(Z1, Z2)을 통해 투과광을 투과 또는 차단함으로써 화상이 표시된다.In FIG. 1A, the electrodes E1 and E2 are arranged to face each other on the two substrates P1 and P2 of the LCD, and the liquid crystals Q aligned with the alignment layers A1 and A2 are injected therebetween, thereby injecting the electrodes E1. , E2) changes light transmission characteristics, and the image is displayed by transmitting or blocking the transmitted light through the polarizing plates Z1 and Z2 attached to the outside of the substrates P1 and P2.
이러한 LCD는 구동전압과 소비전력이 극히 낮고 제조가 비교적 용이한 장점이 있어 가장 널리 사용되고 있으나, 비발광소자이므로 별도의 조명이 필요하고 시야각이 매우 좁으며 속동성(速動性)이 낮아 고해상도 동화상의 표시가 어려운등의 문제가 있다.These LCDs are the most widely used because of their extremely low driving voltage, low power consumption, and relatively easy manufacturing.However, since they are non-light-emitting devices, they require additional illumination, have a very narrow viewing angle, and low dynamics. There is problem such as difficulty of indication.
한편 도 1(B)에 도시된 것은 기체방전현상을 이용하는 PDP인바, 이것은 두 기판(P1, P2)간에 방전기체를 주입하고 전극(E1, E2)의 선택에 의해 플라즈마방전을 일으킴으로써 화상을 표시하는 장치이다(나머지부호 B는 격벽임).1B shows a PDP using a gas discharge phenomenon, which displays an image by injecting a discharge gas between two substrates P1 and P2 and causing plasma discharge by selecting the electrodes E1 and E2. (Remainder B is a partition).
PDP의 특성은 개략적으로 보아 LCD의 장단점과 반대라고 할수 있는 바, 벽걸이 TV나 대형 표시장치를 구현할 차세대 표시장치로서 활발히 실용화단계에 진입하고 있다.The characteristics of the PDP are roughly opposite to the advantages and disadvantages of LCDs, and they are actively entering the commercialization stage as next-generation display devices to implement wall-mounted TVs or large display devices.
이외에도 FED등이 사용되고 있는 바 PDP나 FED는 소비전력이 커서 LCD와 같이 휴대장치의 구성이 불가능하고, 이들은 모두 진공이나 기체분위기 또는 액정등 유체분위기의 유지를 필요로 하므로 취급에 주의를 요하는 문제가 있다.In addition, since FED is used, PDP and FED have high power consumption, which makes it impossible to configure portable devices such as LCDs. All of them require the maintenance of vacuum, gas atmosphere, or liquid atmosphere such as liquid crystal. There is.
한편 세그먼트(segment) 방식의 표시장치와 멀티스크린(multi screen)장치 등 대형 표시장치에서는 아직도 LED(Light Emitting Diode: 발광 다이오드)가 널리 사용되고 있는 바, LED에 의한 멀티스크린장치는 도 2(A)에 도시된 바와 같이 프레임(F)에 복수의 LED를 매트릭스형으로 배열하여 구성된다.Meanwhile, LEDs (Light Emitting Diodes) are still widely used in large display devices such as segment-type display devices and multi-screen devices, and the multi-screen devices using LEDs are illustrated in FIG. As shown in the drawing, a plurality of LEDs are arranged in a matrix in the frame F.
여기서 LED의 구성을 살펴보면 도 2(B)에 도시된 바와 같이 수지 케이싱(epooxy casing; K)내에 LED칩(C)을 내장하여 리이드전극(L1, L2)을 외부로 인출한 비교적 단순한 구성이다. 여기서 수지 케이싱(K)은 발생광의 집속렌즈 역할을 수행하며 안료의 착색에 의해 발생광이 색순도를 향상시키는 역할도 하게 된다. (이러한 구성은 수지매입형 LED에 관한 것이나 메탈헤더(metal header)형 LED는 측부 케이싱이 금속일뿐 상하부의 구조는 이와 대동소이하다.Referring to the configuration of the LED, as shown in FIG. 2 (B), the LED chip C is embedded in the resin casing K, and the lead electrodes L1 and L2 are drawn out to the outside. Here, the resin casing K serves as a focusing lens of the generated light, and the generated light also serves to improve color purity by coloring the pigment. (This configuration is related to resin-embedded LEDs, but metal header LEDs have metal side casings, but the upper and lower structures are similar.
도 2(C)에는 이러한 LED칩(C)내에 구비된 np 접합의 구조와 작동원리를 도시하고 있는 바, GaAs나 GaP등 발광하기 용이한 반도체 재료로 pn 접합을 구성하여 순방향으로 전류를 흘리면 캐리어(carrier)인 전자(흑색원)와 정공(백색원)이 재결합하여 발광하게 된다. 이것은 소위 재결합 발광 현상을 이용한 것으로 본원에서는 이 칩(C)을 발광 pn 접합으로 총칭하기로 한다.FIG. 2 (C) shows the structure and operation principle of the np junction included in the LED chip C. The pn junction is made of a semiconductor material which is easy to emit light such as GaAs or GaP, and the carrier is applied when current flows in the forward direction. Carrier electrons (black circles) and holes (white circles) recombine to emit light. This uses a so-called recombination luminescence phenomenon, and this chip (C) will be collectively referred to as a luminescent pn junction.
이때 발광색은 반도체 재료에 선택에 따라 좌우되는 바, 종래에는 적, 녹, 황 재료만이 선택가능하여 표시장치로서의 색재현성에 한계가 있었으나, 최근 상당히 고가이기는 하지만 청색 발광재료의 개발로 청색 발광 LED가 출현하여 다시 한번 LED 표시장치가 주목받고 있다.At this time, the emission color depends on the selection of the semiconductor material. In the past, only red, green, and sulfur materials could be selected, so that the color reproducibility of the display device was limited. Has appeared and once again the LED display is attracting attention.
이러한 LED는 LCD처럼 소비전력이 작으면서도 PDP등과 같이 자체발광에 의한 고휘도를 구현하여 발광소자로서는 매우 장점이 많으나, 그 자체가 화상표시소자로 구성된 것이 아니어서, LED로 화상표시장치를 구성한다는 것은 실제적으로는 복수의 발광소자를 배열하여 연결하는 것이므로 공간효율의 낭비가 크며, 이에 따라 피치(pitch)가 큰 멀티스크린장치의 단위패널로는 사용될 수 있지만 고해상도의 독립적인 화상표시소자로는 사용될 수 없다.These LEDs have low power consumption like LCD and high brightness by self-emission like PDP. However, LED has many advantages as a light emitting device, but it is not composed of an image display device. In practice, since a plurality of light emitting devices are connected in an arrangement, waste of space efficiency is large, and thus, a unit panel of a multi-screen device having a large pitch can be used, but a high resolution independent image display device can be used. none.
뿐만아니라 멀티스크린장치를 구성하는 경우에는 도 2(A)에 도시된 바와 같이 프레임(F)에 일일이 LED를 기계적으로 조립해야 하므로 양산용의 소자 제작은 불가능한 실정이다.In addition, in the case of configuring a multi-screen device, as shown in FIG. 2 (A), since LEDs must be mechanically assembled in the frame F, production of devices for mass production is impossible.
이와 같은 종래의 문제점을 감안하여 본 발명의 목적은 LED의 장점을 그대로 발휘할 수 있는 신규한 구성의 평판표시소자를 제공하는 것이다.In view of such a conventional problem, an object of the present invention is to provide a flat panel display device having a novel configuration that can exhibit the advantages of the LED as it is.
도 1(A)는 LCD, (B)는 PDP의 구성을 보이는 단면도.1 (A) is a cross-sectional view showing the configuration of the LCD, (B) PDP.
도 2(A) 내지 (C)는 LED 표시장치의 구성과, LED의 구조, 그리고 그 동작원리를 보이는 단면도.2 (A) to (C) are sectional views showing the structure of the LED display device, the structure of the LED, and the operation principle thereof;
도 3(A) 및 (B)는 본 발명 소자의 한 구성을 도시한 분해사시도 및 단면도,3 (A) and (B) are exploded perspective views and cross-sectional views showing one configuration of the device of the present invention;
도 4 내지 도 6은 본 발명의 다른 실시예들을 보이는 단면도들이다.4 to 6 are cross-sectional views showing other embodiments of the present invention.
<도면의 주요부분에 사용된 부호의 설명><Description of the code used in the main part of the drawing>
1a, 1b: 전면 및 배면기판1a, 1b: front and back substrates
2, 2': 발광 pn 접합2, 2 ': luminescent pn junction
3a, 3b: 선택전극3a, 3b: selection electrode
4: 형광층4: fluorescent layer
5: 블랙매트릭스(black matrix)5: black matrix
6: 집속(集束) 렌즈부6: focus lens unit
상술한 목적의 달성을 위해 본 발명에 의한 평판표시소자는 적어도 한 기판상에 복수의 발광 pn 접합을 행열(array) 형태로 배열하고, 이 발광 pn 접합의 양면에 서로 교차 대향하는 2군(郡)의 선택전극을 격자형으로 접속 배열하는 것을 특징으로 한다.In order to achieve the above object, a flat panel display device according to the present invention comprises a plurality of light emitting pn junctions arranged in an array on at least one substrate, and having two groups intersecting with each other on both sides of the light emitting pn junction. It is characterized in that the select electrodes of the array) are connected in a lattice form.
그러면 두 선택전극의 전압인가에 의한 선택에 의한 선택위치의 발광 pn 접합이 재결합 발광을 하게 되므로 화상의 표시가 가능하게 된다.Then, the light emitting pn junction at the selected position by the voltage application of the two selection electrodes is subjected to recombination light emission, so that image display is possible.
그 결과 저소비전력으로 고휘도를 구현하며 진공이나 유체분위기의 유지가 불필요한 우수한 특성의 평판표시소자가 제공될 수 있다.As a result, a flat display device having excellent characteristics, which realizes high brightness with low power consumption and does not need to maintain a vacuum or a fluid atmosphere, can be provided.
[실시예]EXAMPLE
이하 첨부된 도면을 참조하여 본 발명의 한 바람직한 실시예를 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 3(A) 및 (B)에서, 적어도 한 기판(1a 또는 1b)상에는 복수의 발광 pn 접합(2)이 행열 형태로 배열되고, 그 상하면에 교차대향하는 두 군의 선택전극(3a, 3b)들이 격자상으로 배열되어 각 발광 pn 접합(2)의 상하면에 접속된다.3 (A) and (B), a plurality of light emitting pn junctions 2 are arranged in an array form on at least one substrate 1a or 1b, and two groups of selection electrodes 3a and 3b that cross and face each other on the upper and lower surfaces thereof. Are arranged in a lattice shape and connected to the upper and lower surfaces of each light emitting pn junction 2.
이에 따라 선택전극(3a, 3b)에 대한 구동전압의 선택전 인가에 따라 발광 pn 접합(2)을 선택적으로 발광시켜 도트 매트릭스(dot matrix) 방식으로 화상으로 표시할 수 있게 되는 바, 그 발광원리는 전술한 바와 같은 재결합 발광이다.As a result, the light emitting pn junction 2 can be selectively emitted in accordance with the application of the driving voltage to the selection electrodes 3a and 3b prior to selection, thereby displaying an image in a dot matrix manner. Is recombination light emission as described above.
도시된 실시예에서 각 발광 pn 접합(2)은 별도로 분리된 칩 형태로 도시되어 있으나 이는 구분의 편의를 위한 도시형태이며, 실제적으로는 동일한 층내에서 적절한 절연층의 삽입으로 분리 구성하는 것이 바람직하다.In the illustrated embodiment, each of the light emitting pn junctions 2 is shown as a separate chip, but this is for the sake of convenience of classification, and it is preferable that the light emitting pn junction 2 is separated by inserting an appropriate insulating layer in the same layer. .
이러한 발광 pn 접합(2)의 구체적 구성과 실제 제조방법은 향후 실용화 연구과정에서 더욱 구체적으로 결정될 것이나, 현 단계에서는 분리된 칩 형으로 구성되는 경우 기능적으로는 충분히 작동할 수 있으리라 예측되며, 단일층으로 구성하는 경우의 대략적인 제조과정은 다음과 같다.The specific configuration and actual manufacturing method of the light emitting pn junction 2 will be determined in more detail in the future practical research process, but at this stage, it is predicted that it can function sufficiently if it is composed of a separate chip type. Approximate manufacturing process in the case of configuration as follows.
먼저 매트릭스형의 절연층으로 구획되는 Ga층을 전면적으로 형성한 뒤, 이 Ga층을 감광막등으로 마스킹하여 선별적으로 그리고 순차적으로 P, As, O등을 주입함으로써, 적, 녹, 청 발광의 발광 pn 접합(2)을 분리형성하는 것이다.First, the Ga layer divided by the matrix-type insulating layer is formed on the entire surface, and then the Ga layer is masked with a photoresist film or the like and selectively and sequentially injected with P, As, O, and the like. It is to separate the light emitting pn junction (2).
도시된 발광 발광 pn 접합(2)들은 도트형으로 배열되어 적, 녹, 청 화소의 배열은 "밭전(田)"형태를 취할 것이나, 스트라이프(stripe)형의 배열, 즉 적, 녹, 청 발광의 발광 pn 접합(2)들이 각각 스트라이프형으로 교호적으로 배열되는 구성도 물론 가능하다.The emissive light emitting pn junctions 2 shown are arranged in a dot shape so that the red, green and blue pixel arrays will take the form of “field”, but a stripe arrangement, ie red, green and blue light emission. Of course, a configuration in which the light emitting pn junctions 2 are alternately arranged in a stripe shape is also possible.
한편 바람직하기로는 이 발광 pn 접합(2) 배열의 상,하면 모두에 기판(1a, 1b)이 배열된다. 그러면 한 기판, 예를들어 배면기판(1b)상에 일군의 선택전극(3b)과 발광 pn 접합(2) 행열을 형성하고 전면기판(1a)에 다른 일군의 선택전극(3a)을 형성하여 양 기판(1a, 1b)을 접합함으로써 소자를 완성할 수 있다.On the other hand, preferably, the substrates 1a and 1b are arranged on both the upper and lower surfaces of the light emitting pn junction 2 array. Then, a group of selection electrodes 3b and a light emitting pn junction 2 are formed on one substrate, for example, a rear substrate 1b, and another group of selection electrodes 3a is formed on the front substrate 1a. An element can be completed by joining the board | substrates 1a and 1b.
그 결과 완성된 소자는 도 3(B)와 같은 단면을 가지는 바, 이때 기능층들 사이에 발생되는 공간(V)은 진공으로 형성할 필요는 없으나 경우에 따라서는 불활성가스를 충전할 수도 있다.As a result, the completed device has a cross section as shown in FIG. 3 (B). In this case, the space V generated between the functional layers does not need to be vacuumed, but in some cases, the inert gas may be filled.
여기서 기판(1a, 1b)의 역할은 단순히 기능층들을 보호 유지하는 역할을 하는 바, 양 기판(1a, 1b)은 에폭시등의 수지로 구성될 수도 있다. 이 경우 모든 기능층들을 배면기판(1b)상에 순차적으로 적층형성한 뒤 전면기판(1a)은 수지의 성형으로 구성할 수도 있다. 그러면 전면기판(1a)은 보호층의 역할, 또는 후술하는 집속렌즈의 역할을 수행하게 되며 이 경우 기능층간의 공간(V)이 발생되지 않는 이점이 있다.Here, the role of the substrates 1a and 1b simply serves to protect and maintain the functional layers. Both of the substrates 1a and 1b may be made of a resin such as epoxy. In this case, after stacking all functional layers sequentially on the back substrate 1b, the front substrate 1a may be formed by molding a resin. Then, the front substrate 1a serves as a protective layer or a focusing lens to be described later. In this case, the space V between the functional layers does not occur.
그런데 LED의 재결합 발광은 가시광선뿐아니라 오히려 더 많은 양의 자외선을 방출하는 바, 종래의 LED는 이 자외선을 화상표시에 전혀 이용하지 않았으며 기껏해야 수지케이싱(K)의 착색으로 색 재현을 보조할 뿐이었다.However, the recombination light emission of the LED emits not only visible light but also a large amount of ultraviolet light. Conventional LEDs do not use this ultraviolet light for image display at all, and at best, color reproduction is assisted by coloring of the resin casing (K). I just did.
이에 따라 본 발명에서는 도 4에 도시된 바와 같이, 각 발광 pn 접합(2)의 전면에 형광층(4)을 구비하였다. 이 형광층(4)은 적, 녹, 청 각색의 자외선 여기 형광체와 필요에 따라 해당색의 안료를 포함하여 종래 LED에서 낭비되던 다량의 자외선을 가시광선으로 전환하여 색재현성과 발광휘도를 향상시키도록 하고 있다. 물론 형광층(4)은 해당색의 안료만을 포함하여 칼라필터로 구성될 수도 있다.Accordingly, in the present invention, as shown in FIG. 4, the fluorescent layer 4 is provided on the entire surface of each light emitting pn junction 2. The fluorescent layer 4 includes red, green, and blue ultraviolet excitation phosphors and, if necessary, pigments of a corresponding color to convert a large amount of ultraviolet rays, which are wasted in conventional LEDs, into visible light to improve color reproducibility and luminance. I'm trying to. Of course, the fluorescent layer 4 may be composed of a color filter including only the pigment of the corresponding color.
한편 각 발광 pn 접합(2) 사이의 전면기판(1a)에는 표시화상의 컨트라스트 향상을 위해 흑색재질에 의한 블랙매트릭스(black matrix; 5)가 형성될 수 있다.On the other hand, a black matrix 5 made of a black material may be formed on the front substrate 1a between the light emitting pn junctions 2 to improve the contrast of the display image.
그런데 도 3의 설명에서 논한 바와 같이 단일층내에서 적, 녹, 청 발광의 발광 pn 접합(2)을 구분형성하는 것은 반복적인 마스킹과 주입등으로 매우 번잡한 바, 형광층(4)을 사용한다면 이러한 번거로운 공정을 단순화할 수 있다.However, as described in the description of FIG. 3, the red, green, and blue light emitting pn junctions 2 are formed in a single layer, which is very complicated by repetitive masking and injection, if the fluorescent layer 4 is used. This cumbersome process can be simplified.
즉 도 5의 실시예에서 발광 pn 접합(2')은 백색광을 발광하는 단일층으로 구성되어 선택전극(3a, 3b)에 국부적 발광이 일어나고, 발광색은 그 전면의 형광층(4)에 의해 선택된다. 이 형광층(4)은 해당색의 안료만을 포함하는 칼라 필터나, 자외선 여기 형광체를 포함하는 구성 또는 양자 모두의 구성을 취할 수 있다.That is, in the embodiment of Fig. 5, the light emitting pn junction 2 'is composed of a single layer that emits white light so that local light emission occurs on the selection electrodes 3a and 3b, and the light emission color is selected by the fluorescent layer 4 on its front surface. do. This fluorescent layer 4 can take the form of the color filter containing only the pigment of the said color, the structure containing an ultraviolet-excitation fluorescent substance, or both.
이러한 도 5의 구성을 발광 pn 접합(2')이 마스킹없이 단일한 성막 및 주입과정만으로 이루어질 수 있어 그 제조가 극히 용이하게 되며, 고정밀 고청정의 반도체 제조설비가 아니라 증착설비등 일반적인 평판표시소자 제조설비에서도 제조될 수 있어서 매우 큰 장점을 가진다.In the configuration of FIG. 5, the light emitting pn junction 2 ′ may be formed by a single film forming and implanting process without masking, and thus, the manufacturing thereof may be extremely easy, and a general flat panel display device such as a deposition facility may be used instead of a high-precision high-clean semiconductor manufacturing facility. It can also be manufactured in a manufacturing facility has a very big advantage.
한편 전술한 바와 같이 전면기판(1a)을 사출에 의해 성형되는 경우에는 도 6에 도시된 바와 같이, 각 발광 pn 접합(2)의 볼록한 반구형(半球形)으로 형성되는데 발광 pn 접합(2) 및/또는 형광층(4)에 발생된 빛을 전방으로 집광시켜 표시화상의 휘도와 인식성을 크게 향상시킬 수 있게 된다.On the other hand, when the front substrate 1a is molded by injection as described above, as shown in FIG. 6, each of the light emitting pn junctions 2 is formed as a convex hemispherical shape, and the light emitting pn junctions 2 and And / or condensing the light generated in the fluorescent layer 4 forward, it is possible to greatly improve the brightness and recognition of the display image.
이상과 같이 본 발명에 의하면 LED와 같이 낮은 구동전압과 저소비전력을 구현하여 휴대장치의 구성이 용이한 동시에 PDP나 LCD와 같이 고해상도를 구현할 수 있으며, 진공이나 유체분위기의 유지를 요구하지 않아 취급도 용이한 신규한 구성의 평판표시소자가 제공된다.As described above, according to the present invention, a low driving voltage and a low power consumption, such as LED, are easy to configure a portable device, and high resolution, such as a PDP or LCD, can be implemented, and does not require maintenance of a vacuum or fluid atmosphere. A flat panel display device having a novel novel structure is provided.
본 발명 소자는 멀티스크린장치 뿐아니라 PDP나 LCD 또는 FED등 종래 다른 방식의 소자들이 차지하던 고해상도 화상표시장치의 영역에도 널리 사용될 수 있을 것이다.The device of the present invention may be widely used not only in a multi-screen device but also in a region of a high resolution image display device occupied by other devices such as a PDP, an LCD, or an FED.
Claims (17)
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019970056069A KR19990034461A (en) | 1997-10-29 | 1997-10-29 | Flat panel display element |
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| KR1019970056069A KR19990034461A (en) | 1997-10-29 | 1997-10-29 | Flat panel display element |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100708717B1 (en) * | 2005-10-11 | 2007-04-17 | 삼성에스디아이 주식회사 | Light emitting device using electron emission and flat display apparatus using the same |
| WO2012148234A2 (en) * | 2011-04-29 | 2012-11-01 | 국민대학교 산학협력단 | Full-color led display apparatus and method for manufacturing same |
| KR20210001489U (en) | 2019-12-23 | 2021-07-01 | 주식회사 한국가스기술공사 | Disconnecting jig for cooler of air compressor |
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| KR100708717B1 (en) * | 2005-10-11 | 2007-04-17 | 삼성에스디아이 주식회사 | Light emitting device using electron emission and flat display apparatus using the same |
| WO2012148234A2 (en) * | 2011-04-29 | 2012-11-01 | 국민대학교 산학협력단 | Full-color led display apparatus and method for manufacturing same |
| WO2012148234A3 (en) * | 2011-04-29 | 2012-12-20 | 국민대학교 산학협력단 | Full-color led display apparatus and method for manufacturing same |
| KR20210001489U (en) | 2019-12-23 | 2021-07-01 | 주식회사 한국가스기술공사 | Disconnecting jig for cooler of air compressor |
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