KR960005584B1 - Method for metallizing on ceramic board - Google Patents
Method for metallizing on ceramic board Download PDFInfo
- Publication number
- KR960005584B1 KR960005584B1 KR1019920024414A KR920024414A KR960005584B1 KR 960005584 B1 KR960005584 B1 KR 960005584B1 KR 1019920024414 A KR1019920024414 A KR 1019920024414A KR 920024414 A KR920024414 A KR 920024414A KR 960005584 B1 KR960005584 B1 KR 960005584B1
- Authority
- KR
- South Korea
- Prior art keywords
- ceramic substrate
- copper compound
- metallizing
- layer
- copper
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
Abstract
Description
제1도는 본 발명의 공정도.1 is a process diagram of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 세라믹 기판 2 : 동화합물1: ceramic substrate 2: copper compound
3 : 순동층 4 : 금속층3: pure copper layer 4: metal layer
본 발명은 세라믹 기판 표면에 동화합물을 이용하여 메탈라이징하는 방법에 관한 것이다.The present invention relates to a method of metallizing a surface of a ceramic substrate using a copper compound.
종래에는 세라믹 기판 표면에 메탈라이징하는 방법으로 Mo, Mo-Mn계의 페이스트(paste)를 세라믹 기판 표면에 도포하고 수증기를 포함한 수소 분위기 또는 수소/질소 분위기 중에서 1300∼1700℃로 가열하여 세라믹 기판 표면에 Mo를 포함한 금속층을 형성하는 Mo-Mn법이 있으나, 이것은 수증기를 포함한 수소 분위기 또는 수소/질소 분위기 조성에 경비가 많이 소요되고, 수소 분위기로 인해 위험요소가 상존하며, 소성온도가 1300∼1700℃의 고온이기 때문에 소요 열량이 커져 그에 따른 경비가 많이 소요될 뿐 아니라 세라믹 기판 표면에 도전성 회로를 도금할 필요가 있을 경우에는 Mo-Mn 금속표면층에 다시 도전성 금속을 도금해야 하기 때문에 공정이 복잡해지는 등의 문제점이 있었다.Conventionally, Mo and Mo-Mn pastes are applied to the surface of the ceramic substrate by metallizing the surface of the ceramic substrate, and heated to 1300-1700 ° C. in a hydrogen atmosphere including water vapor or a hydrogen / nitrogen atmosphere. There is a Mo-Mn method for forming a metal layer containing Mo, but this requires a lot of expense in the hydrogen atmosphere or hydrogen / nitrogen atmosphere composition including water vapor, risk factors exist due to the hydrogen atmosphere, the firing temperature is 1300 ~ 1700 Due to the high temperature of ℃, the required heat is increased and the cost is high, and when it is necessary to plate the conductive circuit on the surface of the ceramic substrate, the process is complicated because the conductive metal must be plated on the Mo-Mn metal surface layer again. There was a problem.
본 발명은 이와같은 점을 감안하여 동화합물을 이용하고 소성분위기가 대기중이며 알콜증기 분위기 중에서 환원반응을 일으켜 순동층을 표면에 노출시킬 수 있기 때문에 분위기 조성에 많은 경비가 필요하지 않으며 위험 요소가 없을 뿐만 아니라 도전성 피막을 직접 형성시킬 수 있어 공정이 용이해지는 것으로 공정에 따라 상세히 설명하면 다음과 같다.In view of the above, the present invention does not require much expense in the composition of the atmosphere because the copper compound is exposed to the surface of the copper layer by using a copper compound, a small component atmosphere in the atmosphere, and a reduction reaction in an alcohol vapor atmosphere. In addition, since the conductive film can be directly formed, the process will be described in detail according to the process as follows.
제1공정 : 동화합물(Cu2O) 또는 Cu2S)분말과 카오린 분말을 중량비 90 : 10으로 섞어 유기 바인더에 의해 페이스트(paste) 상태로 만들어진 동화합물(2)을 알루미나(Al2O3), 지르코니아(ZrO2), 질화 실리콘(Si3N4)으로된 세라믹 기판(1)에 표면에 도포한다.Step 1: Copper compound (Cu 2 O) or Cu 2 S) powder and kaolin powder are mixed in a weight ratio of 90: 10 to obtain a copper compound (2) made into a paste by an organic binder to alumina (Al 2 O 3 ), Zirconia (ZrO 2 ), and silicon nitride (Si 3 N 4 ) on the ceramic substrate 1 is applied to the surface.
제2공정 : 동화합물(2)이 도포된 세라믹 기판(1)을 전기로에 넣어 1000∼1200℃의 온도로 10∼30분간 대기중에서 소성처리한다.Second step: The ceramic substrate 1 coated with the copper compound 2 is placed in an electric furnace and calcined for 10 to 30 minutes in the air at a temperature of 1000 to 1200 ° C.
제3공정 : 소정이 끝나면 대기중에서 400∼500℃까지 냉각하여 알콜증기중에 넣어 표면층만 환원시킨다.Third step: After the predetermined time, it is cooled to 400 ~ 500 ℃ in the air and put into alcohol vapor to reduce only the surface layer.
이렇게 알콜증기 중에서 환원된 세라믹 기판의 표면에는 순동층(3)이 형성되고 순동층(3)의 표면에 Ni, Au, Ag 등의 금속도금을 실시함으로써 완전한 금속층(4)을 형성하여 IC회로기판, 금속과 세라믹의 접합에 이용할 수 있게 되는 것이다.Thus, the copper layer 3 is formed on the surface of the reduced ceramic substrate in alcohol vapor, and the complete metal layer 4 is formed on the surface of the copper layer 3 by plating metal such as Ni, Au, Ag or the like to form an IC circuit board. It can be used for joining metals and ceramics.
이와같이 본 발명은 동화합물(Cu2O 또는 Cu2S)분말과 카오린 분말을 중량비 90 : 10으로 섞어 유기바인더에 의해 페이스트 상태로 만들어진 동화합물(2)을 세라믹기판(1) 표면에 도포하고, 전기로에 넣어 1000∼1200℃의 온도로 10∼30분간 대기중에서 소성처리한 후 400∼500℃로 냉각하여 알콜증기 중에 넣어 표면층만 환원시킴으로서 세라믹 기판(1)의 표면에 손동층(3)을 형성하여, Ni, Au, Ag등의 금속도금을 실시하여 완전한 금속층(4)을 형성함으로써 IC회로기판, 금속과 세라믹의 접합에 이용할 수 있게 한 메탈라이징 방법에 관한 것이다.As described above, the present invention mixes the copper compound (Cu 2 O or Cu 2 S) powder and the kaolin powder in a weight ratio of 90: 10 to apply a copper compound (2) made in the paste state by the organic binder to the surface of the ceramic substrate (1), The copper layer was formed on the surface of the ceramic substrate 1 by putting it in an electric furnace and calcining it for 10 to 30 minutes in the air at a temperature of 1000 to 1200 ° C, and then cooling it to 400 to 500 ° C to reduce the surface layer only. The present invention relates to a metallizing method which can be used for joining an IC circuit board, a metal and a ceramic by forming a complete metal layer 4 by performing metal plating such as Ni, Au, Ag, or the like.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920024414A KR960005584B1 (en) | 1992-12-16 | 1992-12-16 | Method for metallizing on ceramic board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920024414A KR960005584B1 (en) | 1992-12-16 | 1992-12-16 | Method for metallizing on ceramic board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR940017971A KR940017971A (en) | 1994-07-27 |
| KR960005584B1 true KR960005584B1 (en) | 1996-04-26 |
Family
ID=19345698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019920024414A KR960005584B1 (en) | 1992-12-16 | 1992-12-16 | Method for metallizing on ceramic board |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR960005584B1 (en) |
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1992
- 1992-12-16 KR KR1019920024414A patent/KR960005584B1/en not_active IP Right Cessation
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| Publication number | Publication date |
|---|---|
| KR940017971A (en) | 1994-07-27 |
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