KR960003647B1 - Method of taper etching - Google Patents
Method of taper etching Download PDFInfo
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- KR960003647B1 KR960003647B1 KR1019930004705A KR930004705A KR960003647B1 KR 960003647 B1 KR960003647 B1 KR 960003647B1 KR 1019930004705 A KR1019930004705 A KR 1019930004705A KR 930004705 A KR930004705 A KR 930004705A KR 960003647 B1 KR960003647 B1 KR 960003647B1
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- film
- etching
- layer
- base
- forming
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
Abstract
Description
제1도는 종래 박막 형성을 설명하기 위한 공정 단면도.1 is a cross-sectional view for explaining a conventional thin film formation.
제2도는 본 발명 박막 형성을 설명하기 위한 공정 단면도.2 is a cross-sectional view for explaining the formation of a thin film of the present invention.
제3도는 제2도의 경사 식각된 부분을 확대하여 나타낸 단면도.3 is an enlarged cross-sectional view of an obliquely etched portion of FIG.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 기판 2 : 베이스막1 substrate 2 base film
5 : 대미지층 6 : 감광막5: damage layer 6: photosensitive film
7 : 박막7: thin film
본 발명은 경사 식각(Taper Etching)에 관한 것으로, 특히, 스텝 커버리지(Step Coverage) 및 콘택(Contact) 특성을 향상하기에 적당하도록 한 경사 식각 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to taper etching, and more particularly, to an inclined etching method that is suitable for improving step coverage and contact characteristics.
종래 기술은 제1도a와 같이 기판(1) 위에 베이스막(Base Layer)을 형성하고, 제1b도와 같이 베이스막(2) 위에 감광막(Photo Resist)(3)을 형성한 후 패터닝(Patterning)된 감광원판(상기 제1도중에 도시하지 않음)을 이용하여 식각할 영역의 감광막(3)을 자외선에 노출시키므로써 그 노출된 감광막(3)을 제거한다.In the prior art, a base layer is formed on a substrate 1 as shown in FIG. 1A, and a photoresist 3 is formed on the base layer 2 as shown in FIG. 1B, followed by patterning. The exposed photosensitive film 3 is removed by exposing the photosensitive film 3 of the region to be etched to ultraviolet rays using the photosensitive disc (not shown in FIG. 1).
다음, 제1c도와 같이 습식화학(Wet Chemistry) 방법 또는 RIE(Reactive Ion Etching) 또는 스퍼터 식각(Sputter Etching)법을 이용하여 상기 감광막(3)영역을 제외한 베이스막(2)을 제거한 후 감광막(3)을 전부 제거한다.Next, as shown in FIG. 1c, the base film 2 except for the photoresist 3 region is removed by using wet chemistry, reactive ion etching, or sputter etching, and then the photoresist 3 Remove all)
이어서, 제1b도와 같이 원하는 소자 형성을 위해 드러난 전 표면에 박막(4)을 형성한다.Subsequently, a thin film 4 is formed on the entire surface exposed to form a desired device as shown in FIG.
단, 상기 감광막(3)으로는 포지티브형(Positive Type)과 네가티브형(Negative Type)이 있는데, 해상도(Resolution)가 뛰어난 포지티브형을 많이 사용한다.However, the photosensitive film 3 includes a positive type and a negative type, and many positive types having excellent resolution are used.
그러나, 이와 같은 종래의 기술에 있어서는 다음과 같은 결점이 있다.However, this conventional technique has the following drawbacks.
첫째, 베이스막(2) 제거시 “F”와 같이 가장자리가 거의 직각으로 제거되므로써 박막(4)을 형성할 경우 “F”와 같은 부위의 스탭 커버리지가 불량하므로 “F”와 같은 부위에서 박리현상이 발생한다.First, when the base film 2 is removed, the edges are removed at almost right angles, such as “F”, so that when the thin film 4 is formed, the step coverage of the portion such as “F” is poor. This happens.
둘째, 상기와 같은 박리현상을 방지하기 위해 박막(4)을 베이스막(2)보다 훨씬 두껍게 형성해야 하므로써 “F”와 같은 부위의 스탭 커버리지가 불량하므로 제품의 질이 저하하는 원인을 초래한다.Second, since the thin film 4 is formed to be much thicker than the base film 2 in order to prevent the peeling phenomenon as described above, the step coverage of a portion such as “F” is poor, resulting in a deterioration of product quality.
셋째, 베이스막(2)의 패턴이 좁을 경우 “G”와 같은 빈 공간이 발생하므로써 그 빈 공간에 공기 등이 잔류하다가 후 공정시 빠져나오면서 박리현상을 일으키므로 제품의 신뢰성을 저하한다.Third, when the pattern of the base film 2 is narrow, an empty space such as “G” is generated, so that air or the like remains in the empty space and is released during the post-process, thereby causing a peeling phenomenon, thereby lowering the reliability of the product.
본 발명은 이와 같은 종래의 결점을 감안하여 안출한 것으로, 베이스막 표면을 Ar 플라즈마(Plasma) 처리하여 베이스막의 모서리 부분을 경사지게 하므로써 소자의 질을 향상하므로 제품의 신뢰성을 증대할 수 있는 경사 식각 방법을 제공하는데 그 목적이 있다.The present invention has been devised in view of the above-mentioned drawbacks, and the inclined etching method which can improve the reliability of the product by improving the quality of the device by inclining the edge portion of the base film by treating the base film with Ar plasma (Plasma) The purpose is to provide.
이하에서 이와 같은 목적을 달성하기 위한 본 발명의 실시예를 첨부된 도면에 의하여 상세히 설명하면 다음과 같다.Hereinafter, an embodiment of the present invention for achieving such an object will be described in detail with reference to the accompanying drawings.
제2a도는 본 발명의 공정 단면도로, 제2a도와 같이 기판(1) 위에 베이스막(2)을 형성한 후 베이스막(2) 표면을 베이스막(2)이 식각되거나 손상되지 않을 정도로 Ar 플라즈마 처리하여 베이스막(2) 위에 대미지층(Damage Layer)(5)을 형성한다.FIG. 2A is a cross sectional view of the present invention. After forming the base film 2 on the substrate 1 as shown in FIG. 2A, the surface of the base film 2 is treated with an Ar plasma so that the base film 2 is not etched or damaged. A damage layer 5 is formed on the base film 2.
다음, 제2b도와 같이 대미지층(5) 위에 감광막(6)을 선택적으로 형성한 후 감광막(6)을 포스트베이킹(Post Baking)(또는 Hard Baking)에 사용하는 온도 이상에서 베이킹하여 감광막(6)의 양측면이 흘러내려 경사지도록 한다.Next, as shown in FIG. 2B, the photoresist film 6 is selectively formed on the damage layer 5, and then the photoresist film 6 is baked at or above a temperature used for post baking (or hard baking). Let both sides of the side run down and incline.
이어서, 제2c도와 같이 식각 가스에 O2가스를 적당량 첨가하여 RIE법으로 식각하므로써 감광막(6)이 애싱(Ashing)되며 대미지층(5)은 빠르게 제거되는 동시에 패턴의 가장자리 부분의 식각이 더욱 활발하게 이루어지므로 결국, 제2d도와 같이 베이스막(2)을 경사 식각한다.Subsequently, as shown in FIG. 2C, an appropriate amount of O 2 gas is added to the etching gas, and the photoresist film 6 is ashed by the RIE method, and the damage layer 5 is quickly removed, and the edge portion of the pattern is more actively etched. As a result, the base film 2 is obliquely etched as shown in FIG. 2D.
그리고, 제2e도와 같이 드러난 전 표면에 박막(7)을 형성한다.Then, the thin film 7 is formed on the entire surface exposed as shown in FIG. 2E.
이와같은 본 발명을 보면, 먼저, 베이스막(2) 위에 Ar 플라즈마를 스퍼터링 처리시 Ar +이온이 전기장에 의해 베이스막(2) 표면에 충돌하는 동시에 베이스막(2)이 식각되는데, 그 스퍼터링 강도를 조절하면 베이스막(2)의 식각은 이루어지지 않으면서 베이스막(2) 위에 500Å-700Å 정도의 두께만큼 본딩(Bonding) 고리가 깨어져 결합상태가 약하며 식각비가 큰 대미지층(5)이 형성된다.According to the present invention, first, when the Ar plasma is sputtered on the base film 2, the Ar + ions collide with the surface of the base film 2 by an electric field, and the base film 2 is etched. By adjusting, the bonding ring is broken by the thickness of about 500Å-700Å on the base layer 2 without etching, thereby forming a damage layer 5 having a weak bonding state and a large etching ratio. .
또한, 감광막(6) 베이킹시 특히, Az1518 포지티브 감광막 베이킹의 경우 140℃ 정도의 온도에서 15분 이상 베이킹한다.In addition, in the case of baking the photosensitive film 6, in particular, in the case of Az1518 positive photosensitive film baking, it bakes for 15 minutes or more at the temperature of about 140 degreeC.
그리고, RIE 식각시 a-Si : H의 경우 CCI2F2가스+O2가스 10% 또는 CF4가스+O2가스 10%, Cr 등 금속의 경우 Cl2가스+O2가스 15% 또는 BCl3가스+O2가스 10%의 가스를 사용한다.In case of a-Si: H, CCI 2 F 2 gas + O 2 gas 10% or CF 4 gas + O 2 gas 10% for RIE etching, Cl 2 gas + O 2 gas 15% or BCl for metals such as Cr 3 gas + O 2 gas 10% gas is used.
이상에서 설명한 바와 같이 본 발명은 베이스막(2) 패턴의 모서리 부분이 10°미만으로 경사지므로써 이후 공정의 스텝 커버리지가 양호하고, 콘택 저항이 적은 콘택을 실현하므로 전기적 특성이 개선되어 결국, 제품의 신뢰성이 증대된다.As described above, according to the present invention, since the edge portion of the pattern of the base film 2 is inclined to less than 10 °, the step coverage of the subsequent process is good and the contact resistance with low contact resistance is realized. Reliability is increased.
즉, 셈(SEM)과 간은 장비를 이용하여 제3a도의 “H”와 같은 부분을 더 확대하여 보면, 제3b도와 같이 베이스막(2)이 매우 완만한 경사를 이루고 있음을 알 수 있다.That is, when the SEM and the liver are further enlarged to the portion such as “H” in FIG. 3a by using the equipment, it can be seen that the base film 2 is inclined very gently as in FIG. 3b.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930004705A KR960003647B1 (en) | 1993-03-25 | 1993-03-25 | Method of taper etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930004705A KR960003647B1 (en) | 1993-03-25 | 1993-03-25 | Method of taper etching |
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| Publication Number | Publication Date |
|---|---|
| KR940022187A KR940022187A (en) | 1994-10-20 |
| KR960003647B1 true KR960003647B1 (en) | 1996-03-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1019930004705A KR960003647B1 (en) | 1993-03-25 | 1993-03-25 | Method of taper etching |
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| KR (1) | KR960003647B1 (en) |
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| KR940022187A (en) | 1994-10-20 |
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