KR960002994A - Semiconductor laser diode and manufacturing method thereof - Google Patents

Abstract

The present invention relates to a semiconductor laser diode and a method for manufacturing the same, and more particularly, to a compound semiconductor laser diode having an improved structure using a group III-V element and a method for manufacturing the same.

That is, in the semiconductor laser diode according to the present invention, the center portion of the current blocking layer is etched in the shape of a pigeon tail, and the second clad layer is formed in the shape of a V-shaped valley having a flat bottom surface by organometallic chemical vapor deposition and has the same shape. By forming the active layer, by narrowing the gap between the shoulder of the current blocking layer and the valley slope of the active layer as much as possible, the leakage path of the current is narrowed to minimize the leakage current and the driving current value of the device is lowered and the efficiency is reduced. This has the advantage that high output operation is possible.

In addition, by absorbing the lateral mode of the beam in the shoulder portion of the current blocking layer is improved beam characteristics and there is an advantage in the basic mode.

Description

Semiconductor laser diode and manufacturing method thereof

As this is a public information case, the full text was not included.

2 to 5 are process steps for manufacturing a semiconductor laser diode according to the present invention, and FIG. 2 is a vertical sectional view after the current blocking layer is grown on the upper surface of the substrate.

3 is a vertical sectional view after selectively etching the central portion of the current blocking layer.

4 is a vertical cross-sectional view after growing the laser oscillation layer and the cap layer on the top surface of the selectively etched current blocking layer.

5 is a complete vertical cross-sectional view of the semiconductor laser diode according to the present invention, which is a vertical cross-sectional view after depositing an electrode metal.

Claims (7)

A semiconductor laser diode comprising a current oscillation layer, a laser oscillation layer and a cap layer formed by sequentially stacking a current blocking layer, a first cladding layer, an active layer, and a second cladding layer on a substrate, wherein the current blocking layer is formed at the center thereof. And a conductive channel etched in a strip shape having a trapezoidal cross section of light, wherein the first cladding layer is grown to fill the upper surface of the current blocking layer and the conductive channel, and the upper surface is formed in a V shape of a flat bottom corresponding to the conductive channel. And the active layer is grown on an upper surface of the first clad layer, and a center portion thereof is formed in a V shape of the flat bottom portion. 2. The semiconductor laser diode of claim 1, wherein a strip direction of a conduction channel etched in a strip shape having a trapezoidal structure of phase-neutral light of the current blocking layer is [110]. The semiconductor laser diode according to claim 1, wherein the first cladding layer has a thickness of 1 μm or less. 4. The semiconductor laser diode of claim 3, wherein a shortest distance between the inclined surface of the active layer and the shoulder portion of the current blocking layer is 0.2 μm or less. The first growth step of epitaxially growing a current blocking layer on the upper surface of the substrate, and the central portion of the current blocking layer grown in the first growth step is etched by photolithography to open the conduction channel of the upper and lower quadrangular structure. A second growth step of growing the first cladding layer and the active layer, the second cladding layer and the cap layer are sequentially grown while the etching step of etching into a strip shape and the openings etched in the etching step are filled by the vapor phase growth method. Method for producing a semiconductor laser diode comprising a. The method of manufacturing a semiconductor laser diode according to claim 5, wherein the vapor phase growth method is an organometallic vapor phase growth method. The method of claim 5, wherein in the etching step, the central portion of the current blocking layer is etched into a strip in a direction [110]. ※ Note: The disclosure is based on the original application.