KR950034815A - Charge coupled device - Google Patents

Charge coupled device Download PDF

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Publication number
KR950034815A
KR950034815A KR1019940011921A KR19940011921A KR950034815A KR 950034815 A KR950034815 A KR 950034815A KR 1019940011921 A KR1019940011921 A KR 1019940011921A KR 19940011921 A KR19940011921 A KR 19940011921A KR 950034815 A KR950034815 A KR 950034815A
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KR
South Korea
Prior art keywords
gate electrodes
impurity layer
gate electrode
buried impurity
length
Prior art date
Application number
KR1019940011921A
Other languages
Korean (ko)
Inventor
남정현
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019940011921A priority Critical patent/KR950034815A/en
Priority to JP7130373A priority patent/JPH07326735A/en
Publication of KR950034815A publication Critical patent/KR950034815A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76858—Four-Phase CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

고집적 및 고속에 유리한 4-상 전하결합소자에 대해 기재되어 있다.A four-phase charge coupled device that is advantageous for high integration and high speed has been described.

이는, 서로 이웃하는 게이트전극이 길이가 서로 다른 네 개의 게이트전극이 같은 순서로 반복적으로 형성되어 있고, 그 중 상대적으로 그 길이가 긴 게이트전극의 하부에 부분적으로 매몰 불순층이 형성되어 있는 것을 특징으로 한다. 이 전하결합소자는, 특히 CCD형 고체촬상장치에 적용함이 좋다. 매몰 불순층에 의한 전위장벽에 의해 신호전하의 전송효율을 높인다.This is characterized in that four gate electrodes having different lengths of neighboring gate electrodes are repeatedly formed in the same order, and a partially buried impurity layer is formed below the relatively long gate electrode. It is done. This charge coupling element is particularly applicable to CCD solid-state imaging devices. Due to the potential barrier caused by the buried impurity layer, the transmission efficiency of signal charges is increased.

Description

전하결합소자Charge coupled device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제5도는 본 발명의 일 실시예에 의한 4-상 CCD 구조를 도시한 단면도이다, 제7도는 상기 제6도의 클럭펄스가 인가되었을 때의 전위분포도이다.5 is a cross-sectional view showing a four-phase CCD structure according to an embodiment of the present invention. FIG. 7 is a potential distribution diagram when the clock pulse of FIG. 6 is applied.

Claims (5)

서로 이웃하는 게이트전극의 길이가 서로 다른 네 개의 게이트전극이 같은 순서로 반복적으로 형성되어 있고, 그 중 상대적으로 그 길이가 긴 게이트전극의 하부에 부분적으로 매몰 불순층이 형성되어 있는 것을 특징으로 하는 전하결합소자.Four gate electrodes having different lengths of neighboring gate electrodes are repeatedly formed in the same order, and a partially buried impurity layer is formed below the relatively long gate electrode. Charge coupled device. 제1항에 있어서, 상기 상대적으로 그 길이가 긴 게이트전극의 길이는 상대적으로 그 길이가 짧은 게이트 전극 길이의 두 배인 것을 특징으로 하는 전하결합소자.The charge coupling device of claim 1, wherein the length of the relatively long gate electrode is twice the length of the relatively short gate electrode. 제1항에 있어서, 상기 매몰 불순층의 길이는 상기 상대적으로 그 길이가 긴 게이트전극 길이의 1/2인 것을 특징으로 하는 전하결합소자.The charge coupling device of claim 1, wherein a length of the buried impurity layer is one half of a length of the relatively long gate electrode. 제1항에 있어서, 상기 매몰 불순층은 상기 게이트전극들에 펄스가 가해진 후 생기는 전위우물의 깊이보다 작은 전위를 형성하도록 그 불순물의 양이 조절되는 것을 특징으로 하는 전하결합소자.The charge coupling device of claim 1, wherein the buried impurity layer is controlled to have an amount of impurities smaller than a depth of a potential well generated after a pulse is applied to the gate electrodes. 제1항에 있어서, 상기 네 개의 게이트전극에는 각각 다른 상(phase)의 펄스가 인가되는 것을 특징으로 하는 전하결합소자.The charge coupling device of claim 1, wherein pulses of different phases are respectively applied to the four gate electrodes. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940011921A 1994-05-30 1994-05-30 Charge coupled device KR950034815A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019940011921A KR950034815A (en) 1994-05-30 1994-05-30 Charge coupled device
JP7130373A JPH07326735A (en) 1994-05-30 1995-05-29 Charge-coupled element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940011921A KR950034815A (en) 1994-05-30 1994-05-30 Charge coupled device

Publications (1)

Publication Number Publication Date
KR950034815A true KR950034815A (en) 1995-12-28

Family

ID=19384162

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940011921A KR950034815A (en) 1994-05-30 1994-05-30 Charge coupled device

Country Status (2)

Country Link
JP (1) JPH07326735A (en)
KR (1) KR950034815A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100339294B1 (en) * 1998-02-18 2002-06-03 가네꼬 히사시 Solid-State Image Sensing Device and Method of Driving the Same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100339294B1 (en) * 1998-02-18 2002-06-03 가네꼬 히사시 Solid-State Image Sensing Device and Method of Driving the Same

Also Published As

Publication number Publication date
JPH07326735A (en) 1995-12-12

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