KR950034620A - Insulated Gate Bipolar Transistor with Split Buffer Layer - Google Patents

Insulated Gate Bipolar Transistor with Split Buffer Layer Download PDF

Info

Publication number
KR950034620A
KR950034620A KR1019940011291A KR19940011291A KR950034620A KR 950034620 A KR950034620 A KR 950034620A KR 1019940011291 A KR1019940011291 A KR 1019940011291A KR 19940011291 A KR19940011291 A KR 19940011291A KR 950034620 A KR950034620 A KR 950034620A
Authority
KR
South Korea
Prior art keywords
diffusion region
bipolar transistor
gate bipolar
impurity concentration
semiconductor substrate
Prior art date
Application number
KR1019940011291A
Other languages
Korean (ko)
Other versions
KR0133639B1 (en
Inventor
한민구
이병훈
최연익
김두영
Original Assignee
한민구
이병훈
최연익
김두영
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한민구, 이병훈, 최연익, 김두영 filed Critical 한민구
Priority to KR1019940011291A priority Critical patent/KR0133639B1/en
Publication of KR950034620A publication Critical patent/KR950034620A/en
Application granted granted Critical
Publication of KR0133639B1 publication Critical patent/KR0133639B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

본 발명은 절연게이트 바이폴라 트랜지스터에 관한 것으로, 주입되는 소수캐리어에 따른 전압강하에 의해 래치업이 발생하는 문제점을 해결하기 위하여, 동작전류가 공급되는 전극에 접속된 반도체기판과 IGBT가 집접되어진 에피층 사이에 버피층을 가지며, 상기 버피층은 그 상부의 구조에 따라 주입되어질 정공들이 분산주입을 유도할 수 있도록 각각 저농도 및 고농도의 불순물농도를 갖도록 분할된 버피층으로 형성되도록 하여, 상기 분할버피층에 의해 래치업을 유발하는 정공들의 수는 감소되고 반대로 래치업을 유발하지 않는 영역들도 주입되는 정공들의 수는 상대적으로 증가되도록 하여, 래치업이 발생되는 임계치전류가 높아지는 절연게이트 바이폴라 트랜지스터를 제공한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an insulated gate bipolar transistor, and has an epitaxial layer on which a semiconductor substrate connected to an electrode to which an operating current is supplied and an IGBT are bonded to solve a problem of latch-up caused by a voltage drop caused by a minority carrier being injected. Between the buried layer, and the buried layer is to be formed according to the structure of the upper buried layer to be formed into a buried layer divided to each have a low concentration and a high concentration of impurity concentration to induce dispersion injection, As a result, the number of holes causing the latchup is reduced, and conversely, the number of holes injected into the regions that do not cause the latchup is relatively increased, thereby providing an insulated gate bipolar transistor in which the threshold current at which the latchup occurs is increased. do.

Description

분할 버퍼층을 갖는 절연게이트 바이폴라 트랜지스터Insulated Gate Bipolar Transistor with Split Buffer Layer

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래의 일반적인 IGBT의 구조를 보이는 단면구조도.1 is a cross-sectional view showing the structure of a conventional general IGBT.

Claims (3)

반도체기판상에 집적되는 절연게이트 바이폴라 트랜지스터에 있어서, 동작전류가 공급되는 에노오드전극에 접속되는 제1도전형의 반도체기판(10)과, 상기 반도체기판(10)상에 형성된 제1도전형 반도체 에피층(12)과, 상기 에피층(12)의 주표면상에 형성된 제1도전형의 제1확산영역(14)과, 상기 제1확산영역(14)내에 형성된는 제2도전형의 제2확산영역(16)과, 상기 에피층(12)과 제2확산영역(16)의 상부에걸쳐 형성되며 제1확산영역(14)의 일부표면과 게이트절연막을 게재하는 게이트전극(20)과, 상기 게이트전극(20)과 절연되게 형성되며 상기 제1확산영역(14)의 일부표면과 게이트절연막을 개재하는 게이트전극(20)과, 절연되게 형성되며 상기 제1확산영역(14) 및 상기 제2확산영역(16)과 공통접속되는 캐소오드전극(22)과, 그 상부에 상기 제1확산영역(14) 미치 상기 제2확산영역(16)과 공통접속되는 캐소오드전극(22)과, 그 상부에 상기 제1확산영역(14)의 적어도 일부가 형성되어 있는 에피층(12)의 하부에서 제1불순물농도를 가지고 여타의 부분에서는 제1불순물농도 보다 낮은 제2불순물농도를 가지며 상기 반도체기판(10)과 에피층(12) 사이에 형성되는 제2도전형의 분할버피층(28)을 구비함을 특징으로 하는 절연게이트 바이폴라 트랜지스터.In an insulated gate bipolar transistor integrated on a semiconductor substrate, a first conductive semiconductor substrate 10 connected to an anode electrode supplied with an operating current, and a first conductive semiconductor formed on the semiconductor substrate 10. An epitaxial layer 12, a first diffusion region 14 of the first conductive type formed on the main surface of the epitaxial layer 12, and a second conductive type second formed in the first diffusion region 14 A gate electrode 20 formed over the diffusion region 16, the epitaxial layer 12 and the second diffusion region 16, and having a portion of the surface of the first diffusion region 14 and a gate insulating film; The gate electrode 20 is formed to be insulated from the gate electrode 20, and is insulated from the gate electrode 20 interposed between a portion of the first diffusion region 14 and a gate insulating film. A cathode electrode 22 commonly connected to the second diffusion region 16, and the first diffusion region 14 disposed thereon; A first impurity concentration at the lower portion of the epitaxial layer 12 having the cathode electrode 22 commonly connected to the acid region 16 and at least a portion of the first diffusion region 14 formed thereon. In the portion of the insulating impurity having a second impurity concentration lower than the first impurity concentration is characterized in that it comprises a second buffer type divided buffer layer 28 formed between the semiconductor substrate 10 and the epi layer 12 Gate bipolar transistor. 제1항에 있어서, 상기 캐소오드전극(22)에 접속되고 상기 제1 및 제2확산영역(14,16)과 면접되며 상기 제1확산영역(14)보다 고농도의 제2도전형 불순물농도를 갖는 제3확산영역(18)을 더 구비함을 특징으로 하는 절연게이트 바이폴라 트랜지스터.2. The impurity concentration according to claim 1, which is connected to the cathode electrode 22 and is interviewed with the first and second diffusion regions 14 and 16 and has a higher concentration of the second conductivity type impurity concentration than the first diffusion region 14. And a third diffusion region (18) having an insulating gate bipolar transistor. 제2항에 있어서, 상기 분할버퍼층(28)은 상기 제3확산영역(18)의 하부의 적어도 일부에서 제2농도를 가짐을 특징으로 하는 절연게이트 바이폴라 트랜지스터.3. The insulated gate bipolar transistor according to claim 2, wherein the split buffer layer has a second concentration in at least a portion of the lower portion of the third diffusion region. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940011291A 1994-05-24 1994-05-24 Insulated gate bipolar transistor KR0133639B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940011291A KR0133639B1 (en) 1994-05-24 1994-05-24 Insulated gate bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940011291A KR0133639B1 (en) 1994-05-24 1994-05-24 Insulated gate bipolar transistor

Publications (2)

Publication Number Publication Date
KR950034620A true KR950034620A (en) 1995-12-28
KR0133639B1 KR0133639B1 (en) 1998-04-23

Family

ID=19383664

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940011291A KR0133639B1 (en) 1994-05-24 1994-05-24 Insulated gate bipolar transistor

Country Status (1)

Country Link
KR (1) KR0133639B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100397858B1 (en) * 1996-12-27 2003-12-18 페어차일드코리아반도체 주식회사 Insulated gate bipolar transistor
KR100486346B1 (en) * 1997-08-20 2006-04-21 페어차일드코리아반도체 주식회사 Power semiconductor device and fabricating method therefor

Also Published As

Publication number Publication date
KR0133639B1 (en) 1998-04-23

Similar Documents

Publication Publication Date Title
US5801420A (en) Lateral semiconductor arrangement for power ICS
US5089864A (en) Insulated gate type semiconductor device
US20020053717A1 (en) Semiconductor apparatus
JPH0357614B2 (en)
US7250639B1 (en) Insulated gate bipolar transistor
KR970067928A (en) Bipolar transistor short-circuit anodized horizontal insulated gate
JPS61154155A (en) Semiconductor device having combined lateral mos/bipolar transistor with increased conductivity
JPS62131580A (en) High speed switching lateral insulated gate transistor
KR100278526B1 (en) Semiconductor device
KR0152345B1 (en) Hybrid schottky injection field effect transistor
JPH10294461A (en) Insulation gate type semiconductor element
JPH03194974A (en) Mos type semiconductor device
JPH0560263B2 (en)
EP0115098B1 (en) Lateral dmos transistor device having an injector region
US4935799A (en) Composite semiconductor device
US4584593A (en) Insulated-gate field-effect transistor (IGFET) with charge carrier injection
KR950034620A (en) Insulated Gate Bipolar Transistor with Split Buffer Layer
US4641163A (en) MIS-field effect transistor with charge carrier injection
KR970004841B1 (en) Lateral resurfed mosfet
KR950034827A (en) Structure of Insulated Gate Bipolar Transistor and Manufacturing Method Thereof
JP3217552B2 (en) Horizontal high voltage semiconductor device
KR20000013509A (en) Insulation gate bipolar transistor with multi-layer buffer structure and the manufacturing method
KR100241055B1 (en) Trench gate laterl insulated gate bipolar transistor
KR100510436B1 (en) Horizontal Insulated Gate Bipolar Transistor
JPH0281476A (en) Mos type semiconductor device

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20121224

Year of fee payment: 16

FPAY Annual fee payment

Payment date: 20131223

Year of fee payment: 17

EXPY Expiration of term