KR950025915A - Method for forming conductive film of semiconductor device - Google Patents

Method for forming conductive film of semiconductor device Download PDF

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Publication number
KR950025915A
KR950025915A KR1019940002268A KR19940002268A KR950025915A KR 950025915 A KR950025915 A KR 950025915A KR 1019940002268 A KR1019940002268 A KR 1019940002268A KR 19940002268 A KR19940002268 A KR 19940002268A KR 950025915 A KR950025915 A KR 950025915A
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KR
South Korea
Prior art keywords
conductive film
forming
film
semiconductor device
polymer
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Application number
KR1019940002268A
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Korean (ko)
Inventor
최양규
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940002268A priority Critical patent/KR950025915A/en
Publication of KR950025915A publication Critical patent/KR950025915A/en

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Abstract

본 발명은 반도체 소자의 제조공정 중 전도막 형성방법에 관한 것으로, 예정된 전도막 형성부위에 전도막(2)을 형성한 다음, 상기 전도막(2) 상부에 감광막(3) 패턴을 형성하는 단계; 상기 감광막(3)을 차단막으로 전도막(2)을 소정정도 식각하되 상기 감광막(3) 및 전도막(2) 측벽에 폴리머(4)를 형성하는 단계;상기 감광막(3) 및 폴리머(4)를 식각장벽으로 잔류하는 전도막을 계단형으로 식각하는 단계; 및 상기 계단형 전도막(2')을 소정 각도로 다시 경사식각하는 단계를 포함하여 이루어지는 것을 특징으로 함으로써 본 발명은 고단차비를 갖는 전도막 상부의 평탄화시 종래 빈번히 발생되던 커스프(cusp)의 형성을 방지하여 평탄화 공정이 용이한 효과를 얻을 수 있다.The present invention relates to a method of forming a conductive film during a manufacturing process of a semiconductor device. ; Etching the conductive film 2 to a predetermined degree using the photosensitive film 3 as a blocking film, and forming a polymer 4 on sidewalls of the photosensitive film 3 and the conductive film 2; Etching the conductive film remaining as an etch barrier in a stepped manner; And inclining the stepped conductive film 2 'at a predetermined angle again. It is possible to prevent the formation and obtain the effect that the planarization process is easy.

Description

반도체 소자의 전도막 형성방법Method for forming conductive film of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도 내지 제2E도는 본 발명에 따른 전도막 형성 공정 단면도,2A to 2E are cross-sectional views of the conductive film forming process according to the present invention,

제3도는 본 발명의 방법에 따라 전도막을 형성하고 평탄화 공정을 진행한 후의 단면도.3 is a cross-sectional view after the conductive film is formed and the planarization process is performed in accordance with the method of the present invention.

Claims (6)

반도체 소자의 전도막 형성방법에 있어서, 예정된 전도막 형성부위에 전도막(2)을 형성한 다음, 상기 전도막(2)상부에 감광막(3) 패턴을 형성하는 단계; 상기 감광막(3)을 차단막으로 전도막(2)을 소정정도 식각하되 상기 감광막(3) 및 전도막(2)측벽에 폴리머(4)를 형성하는 단계 ; 상기 감광막(3) 및 폴리머(4)를 식각장벽으로 잔류하는 전도막을 계단형으로 식각하는 단계 ; 및 상기 계단형 전도막(2')을 소정 각도로 다시 경사식각하는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 전도막 형성방법.A method for forming a conductive film of a semiconductor device, comprising: forming a conductive film (2) on a predetermined conductive film forming portion, and then forming a photosensitive film (3) pattern on the conductive film (2); Forming a polymer (4) on the sidewalls of the photosensitive film (3) and the conductive film (2) by etching the conductive film (2) to a predetermined extent using the photosensitive film (3) as a blocking film; Etching the conductive film remaining in the photoresist film 3 and the polymer 4 as an etch barrier in a stepped manner; And inclining the stepped conductive film 2 'at a predetermined angle again. 제1항에 있어서, 전도막(2)은 다결정실리콘막인 것을 특징으로 하는 반도체 소자의 전도막 형성방법.The method for forming a conductive film of a semiconductor device according to claim 1, wherein the conductive film (2) is a polycrystalline silicon film. 제2항에 있어서, 상기 전도막 측벽에 폴리머(4) 형성시 사용 가스는 HBr인 것을 특징으로 하는 반도체 소자의 전도막 형성방법.3. The method of forming a conductive film of a semiconductor device according to claim 2, wherein the gas used for forming the polymer (4) on the sidewall of the conductive film is HBr. 제1항에 있어서, 상기 전도막(2)은 금속막인 것을 특징으로 하는 반도체 소자의 전도막 형성방법.The method of forming a conductive film of a semiconductor device according to claim 1, wherein the conductive film (2) is a metal film. 제4항에 있어서, 상기 전도막 측벽에 폴리머(4) 형성시 사용 가스는 BCl3, Cl2등의 염소계 가스 중 어느 하나인 것을 특징으로 하는 반도체 소자의 전도막 형성방법.The method of forming a conductive film of a semiconductor device according to claim 4, wherein the gas used for forming the polymer (4) on the sidewall of the conductive film is any one of chlorine-based gases such as BCl 3 and Cl 2 . 제1항에 있어서, 상기 게단형 전도막(2')을 소정 각도로 다시 경사식각시 경사각은 40 내지 50° 범위인 것을 특징으로 하는 반도체 소자의 전도막 형성방법.The method according to claim 1, wherein the inclination angle is in the range of 40 to 50 ° when the incidence-type conductive film (2 ') is inclined again at a predetermined angle. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940002268A 1994-02-07 1994-02-07 Method for forming conductive film of semiconductor device KR950025915A (en)

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Application Number Priority Date Filing Date Title
KR1019940002268A KR950025915A (en) 1994-02-07 1994-02-07 Method for forming conductive film of semiconductor device

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Application Number Priority Date Filing Date Title
KR1019940002268A KR950025915A (en) 1994-02-07 1994-02-07 Method for forming conductive film of semiconductor device

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KR950025915A true KR950025915A (en) 1995-09-18

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160010280A (en) * 2014-07-18 2016-01-27 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 Method of semiconductor arrangement formation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160010280A (en) * 2014-07-18 2016-01-27 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 Method of semiconductor arrangement formation

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