KR950025915A - Method for forming conductive film of semiconductor device - Google Patents
Method for forming conductive film of semiconductor device Download PDFInfo
- Publication number
- KR950025915A KR950025915A KR1019940002268A KR19940002268A KR950025915A KR 950025915 A KR950025915 A KR 950025915A KR 1019940002268 A KR1019940002268 A KR 1019940002268A KR 19940002268 A KR19940002268 A KR 19940002268A KR 950025915 A KR950025915 A KR 950025915A
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- KR
- South Korea
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- conductive film
- forming
- film
- semiconductor device
- polymer
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 반도체 소자의 제조공정 중 전도막 형성방법에 관한 것으로, 예정된 전도막 형성부위에 전도막(2)을 형성한 다음, 상기 전도막(2) 상부에 감광막(3) 패턴을 형성하는 단계; 상기 감광막(3)을 차단막으로 전도막(2)을 소정정도 식각하되 상기 감광막(3) 및 전도막(2) 측벽에 폴리머(4)를 형성하는 단계;상기 감광막(3) 및 폴리머(4)를 식각장벽으로 잔류하는 전도막을 계단형으로 식각하는 단계; 및 상기 계단형 전도막(2')을 소정 각도로 다시 경사식각하는 단계를 포함하여 이루어지는 것을 특징으로 함으로써 본 발명은 고단차비를 갖는 전도막 상부의 평탄화시 종래 빈번히 발생되던 커스프(cusp)의 형성을 방지하여 평탄화 공정이 용이한 효과를 얻을 수 있다.The present invention relates to a method of forming a conductive film during a manufacturing process of a semiconductor device. ; Etching the conductive film 2 to a predetermined degree using the photosensitive film 3 as a blocking film, and forming a polymer 4 on sidewalls of the photosensitive film 3 and the conductive film 2; Etching the conductive film remaining as an etch barrier in a stepped manner; And inclining the stepped conductive film 2 'at a predetermined angle again. It is possible to prevent the formation and obtain the effect that the planarization process is easy.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2A도 내지 제2E도는 본 발명에 따른 전도막 형성 공정 단면도,2A to 2E are cross-sectional views of the conductive film forming process according to the present invention,
제3도는 본 발명의 방법에 따라 전도막을 형성하고 평탄화 공정을 진행한 후의 단면도.3 is a cross-sectional view after the conductive film is formed and the planarization process is performed in accordance with the method of the present invention.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940002268A KR950025915A (en) | 1994-02-07 | 1994-02-07 | Method for forming conductive film of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940002268A KR950025915A (en) | 1994-02-07 | 1994-02-07 | Method for forming conductive film of semiconductor device |
Publications (1)
Publication Number | Publication Date |
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KR950025915A true KR950025915A (en) | 1995-09-18 |
Family
ID=66663532
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940002268A KR950025915A (en) | 1994-02-07 | 1994-02-07 | Method for forming conductive film of semiconductor device |
Country Status (1)
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KR (1) | KR950025915A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160010280A (en) * | 2014-07-18 | 2016-01-27 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Method of semiconductor arrangement formation |
-
1994
- 1994-02-07 KR KR1019940002268A patent/KR950025915A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160010280A (en) * | 2014-07-18 | 2016-01-27 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Method of semiconductor arrangement formation |
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