KR950021755A - Thin film transistor - Google Patents
Thin film transistor Download PDFInfo
- Publication number
- KR950021755A KR950021755A KR1019930031517A KR930031517A KR950021755A KR 950021755 A KR950021755 A KR 950021755A KR 1019930031517 A KR1019930031517 A KR 1019930031517A KR 930031517 A KR930031517 A KR 930031517A KR 950021755 A KR950021755 A KR 950021755A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- film transistor
- insulating film
- tft
- sequentially stacked
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract 12
- 239000010408 film Substances 0.000 claims abstract 9
- 230000001681 protective effect Effects 0.000 claims abstract 7
- 239000004065 semiconductor Substances 0.000 claims abstract 6
- 239000000758 substrate Substances 0.000 claims abstract 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 230000009977 dual effect Effects 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78642—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
본 발명은 박막트랜지스터 제조방법에 관한 것으로, 종래기술에 의한 박막트랜지스터 제조에 있어서 TFT의 면적감소가 어려워 전체 LCD어레이에서 TFT가 차지하는 면적으로 인해 개구율이 감소하게 되고 제조시의 수율이 떨어지는 문제를 해결하기 위해 기판(1)과, 상기 기판(1)상부에 순차적층된 드레인전극(6)과 채널보호절연막(7)및 소오스전극(5), 상기 드레인전극(6)과 채널보호절연막(7)및 소오스전극(5)이 순차적층되어 이루어진 적층구조의 적어도 일측 경사면을 포함하는 영역에 순차적층되어 형성된 반도체층(4)과 게이트절연막(3)및 게이트전극(2)을 포함하여 이루어지는 것을 특징으로 하는 박막트랜지스터를 제공한다.The present invention relates to a method for manufacturing a thin film transistor, and in the manufacturing of the thin film transistor according to the prior art, it is difficult to reduce the area of the TFT, thereby reducing the aperture ratio due to the area occupied by the TFT in the entire LCD array and solving the problem of low yield during manufacturing The substrate 1, the drain electrode 6 and the channel protective insulating film 7 and the source electrode 5, and the drain electrode 6 and the channel protective insulating film 7 sequentially stacked on the substrate 1 And a semiconductor layer 4, a gate insulating film 3, and a gate electrode 2 that are sequentially stacked in a region including at least one inclined surface of the stacked structure in which the source electrodes 5 are sequentially stacked. It provides a thin film transistor.
본 발명에 의하면, 2장의 마스크를 이용한 사진식각오정에 의해 TFT를 제조할 수 있기 때문에 공정단순화를 통한 수율의 증가를 도모할 수 있으며, 채널을 1㎛~10㎛까지 경사면의 각도에 따라 자유롭게 조정할 수 있으며, 이중 TFT를 구현할 수 있으므로 여유도 향상으로 수율이 향상되고 LCD의 개구율 향상으로 화질도 개선시킬 수 있게 됨에 따라 대면적, 고정세화에 따라 요구되는 높은 수율 및 우수한 화질을 제공할 수 있게 된다.According to the present invention, since the TFT can be manufactured by photolithography using two masks, the yield can be increased through process simplification, and the channel can be freely adjusted according to the angle of the inclined plane from 1 μm to 10 μm. As the dual TFT can be implemented, the yield can be improved by increasing margin and the image quality can be improved by improving the aperture ratio of LCD. Therefore, it is possible to provide high yield and excellent image quality required by large area and high definition. .
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본 발명의 제1실시예에 의한 TFT단면구조도.2 is a TFT cross-sectional structure diagram according to the first embodiment of the present invention.
제3도는 본 발명의 제1실시예에 의한 TFT제조방법을 도시한 공정순서도.3 is a process flowchart showing a TFT manufacturing method according to the first embodiment of the present invention.
제4도는 본 발명의 제2실시예에 의한 TFT단면구조도.4 is a TFT cross-sectional structure diagram according to a second embodiment of the present invention.
제5도는 본 발명의 제2실시예에 의한 TFT제조방법을 도시한 공정순서도.5 is a process flowchart showing a TFT manufacturing method according to a second embodiment of the present invention.
제6도는 본 발명의 제2실시예에 의한 TFT평면구조도.6 is a TFT planar structure diagram according to a second embodiment of the present invention.
제7도는 본 발명의 제3실시예에 의한 TFT단면구조.7 is a TFT cross-sectional structure according to a third embodiment of the present invention.
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930031517A KR970010688B1 (en) | 1993-12-30 | 1993-12-30 | Method for manufacturing thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930031517A KR970010688B1 (en) | 1993-12-30 | 1993-12-30 | Method for manufacturing thin film transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR950021755A true KR950021755A (en) | 1995-07-26 |
| KR970010688B1 KR970010688B1 (en) | 1997-06-30 |
Family
ID=19374495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019930031517A KR970010688B1 (en) | 1993-12-30 | 1993-12-30 | Method for manufacturing thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970010688B1 (en) |
-
1993
- 1993-12-30 KR KR1019930031517A patent/KR970010688B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR970010688B1 (en) | 1997-06-30 |
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