KR950021608A - Manufacturing method of thick film capacitor - Google Patents
Manufacturing method of thick film capacitor Download PDFInfo
- Publication number
- KR950021608A KR950021608A KR1019930026457A KR930026457A KR950021608A KR 950021608 A KR950021608 A KR 950021608A KR 1019930026457 A KR1019930026457 A KR 1019930026457A KR 930026457 A KR930026457 A KR 930026457A KR 950021608 A KR950021608 A KR 950021608A
- Authority
- KR
- South Korea
- Prior art keywords
- electrode layer
- forming
- insulating layer
- manufacturing
- film capacitor
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000010409 thin film Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract 11
- 239000000919 ceramic Substances 0.000 claims abstract 7
- 239000000758 substrate Substances 0.000 claims abstract 7
- 238000007650 screen-printing Methods 0.000 claims abstract 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 3
- 239000010931 gold Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 229920000642 polymer Polymers 0.000 claims 2
- 239000000843 powder Substances 0.000 claims 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000004898 kneading Methods 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 238000007639 printing Methods 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 238000009966 trimming Methods 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
본 발명은 박막캐패시터의 제조방법, 특히 간단한 공정으로 세라믹기판위에 박막캐패시터를 제조하기 위한 박막캐패시터 제조방법에 관한 것이다. 일반적으로 캐패시터는 1쌍의 도전성 제 1및 제2전극과, 이 제1및 제2전극사이에 삽입된 유전체로 구성된다. 본 발명은 세라믹 기판위에 매쉬마스크를 이용한 실크스크린 인쇄방법으로 도전성 페이스트 패턴을 형성하고, 상기 도전성 페이스트 패턴을 경화시켜 제1전극층을 형성하는 제1단계; 매쉬마스크를 이용한 실크스크린 인쇄방법으로 절연성 페이스트 패턴을 일축단이 상기 제1전극층 위에 위치하고 타측단이 상기 제1전극층의 일측단을 덮어 세라믹기판위에 연장형성하고 경화시켜 제1절연층을 형성하는 제2단계; 상기 제1전극층 형성과 동일한 방법으로 일측단에 상기 제1절연층의 일측단으로부터 소정 거리를 두고 위치하고 타측단이 노출되 제1절연층을 덮어 세라믹 기판위에 연장되도록 제2전극층을 형성하는 제3단계; 상기 제1절연층 형성과 동일한 방법으로 일측단이 상기 제1절연층의 일측단과 연결되고 타측단이 상기 제2전극층 위로 연장형성된 제2절연층을 형성하는 제4단계; 및 상기 제1전극층 형성과 동일한 방법으로 노출된 제2절연층을 둘러싸아 일측단이 상기 제1전극층과 연결되는 제3전극층을 형성하는 제5단계로 구성된다.The present invention relates to a method for manufacturing a thin film capacitor, in particular a method for manufacturing a thin film capacitor for manufacturing a thin film capacitor on a ceramic substrate in a simple process. Generally, a capacitor consists of a pair of conductive first and second electrodes and a dielectric inserted between the first and second electrodes. The present invention comprises a first step of forming a conductive paste pattern by a silk screen printing method using a mesh mask on a ceramic substrate, and curing the conductive paste pattern to form a first electrode layer; A silk screen printing method using a mesh mask is used to form an insulating paste pattern on one side of the first electrode layer and the other end of the first electrode layer to cover one end of the first electrode layer and to be formed on the ceramic substrate to form a first insulating layer. Step 2; A third electrode formed at a distance from one end of the first insulating layer at a side end in the same manner as the first electrode layer formation, and forming a second electrode layer to extend on the ceramic substrate by covering the first insulating layer with the other end exposed; step; Forming a second insulating layer having one end connected to one end of the first insulating layer and the other end extending over the second electrode layer in the same manner as forming the first insulating layer; And a fifth step of forming a third electrode layer having one end connected to the first electrode layer by surrounding the exposed second insulating layer in the same manner as forming the first electrode layer.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도(A)내지 (H)는 본 발명에 따른 박막 캐패시터의 제조공정도를 나타내는 단면도,2 (A) to (H) is a cross-sectional view showing a manufacturing process diagram of a thin film capacitor according to the present invention,
제3도는 본 발명에 따라 제조된 박막캐패시터의 평면도.3 is a plan view of a thin film capacitor manufactured according to the present invention.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930026457A KR950021608A (en) | 1993-12-04 | 1993-12-04 | Manufacturing method of thick film capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930026457A KR950021608A (en) | 1993-12-04 | 1993-12-04 | Manufacturing method of thick film capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR950021608A true KR950021608A (en) | 1995-07-26 |
Family
ID=66825706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019930026457A KR950021608A (en) | 1993-12-04 | 1993-12-04 | Manufacturing method of thick film capacitor |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR950021608A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100244515B1 (en) * | 1996-10-29 | 2000-02-01 | 전주범 | Capacitor for integrated circuit and method of manufacturing thereof |
-
1993
- 1993-12-04 KR KR1019930026457A patent/KR950021608A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100244515B1 (en) * | 1996-10-29 | 2000-02-01 | 전주범 | Capacitor for integrated circuit and method of manufacturing thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |