KR950021210A - Oxide film formation method of semiconductor device - Google Patents

Oxide film formation method of semiconductor device Download PDF

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Publication number
KR950021210A
KR950021210A KR1019930030791A KR930030791A KR950021210A KR 950021210 A KR950021210 A KR 950021210A KR 1019930030791 A KR1019930030791 A KR 1019930030791A KR 930030791 A KR930030791 A KR 930030791A KR 950021210 A KR950021210 A KR 950021210A
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KR
South Korea
Prior art keywords
oxide film
semiconductor device
film formation
temperature
oxidation process
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Application number
KR1019930030791A
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Korean (ko)
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KR100296135B1 (en
Inventor
엄금용
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019930030791A priority Critical patent/KR100296135B1/en
Publication of KR950021210A publication Critical patent/KR950021210A/en
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Publication of KR100296135B1 publication Critical patent/KR100296135B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Abstract

본 발명은 산화막 형성방법에 관한 것으로, 특히 공정챔버에 웨이퍼를 장착하고 소정온도하에서 소정의 산화제를 첨가하여 산화공정을 진행하는 반도체 소자의 산화막 형성방법에 있어서, 상기 산화공정시 산화제로 O2에 DCE적정비율로 첨가하여, 650 내지 750℃의 온도하에서 산화공정을 진행하는 것을 특징으로 함으로써 본 발명은 낮은 산화온도에서 공정이 진행되므로 소자의 누설전류를 감소시킬 수 있으며, DCE를 첨가로 생성되는 Cl로 산화제의 침전을 막아 균질한 산화막을 성장시킴으로써 산화제 및 금속성 물질의 침전 및 침투로 인한 결함을 막을 수 있다. 또한, 산화막 형성 이전 또는 이후에 형성되는 전도막 사이의 금속성 불순물을 제거함으로써 산화막과 전도막 사이의 접촉면 특성이 개선되는 등의 효과를 얻을 수 있다.The present invention relates to the oxide film formation method of a semiconductor device that relates to the oxide film-forming method, in particular mounting the wafer in the process chamber and progress of the oxidation process by adding a predetermined oxidizing agent under a predetermined temperature, the O 2 in the during the oxidation process oxidizing agent By adding the DCE at a proper ratio, the oxidation process is performed at a temperature of 650 to 750 ° C., and thus the present invention can reduce the leakage current of the device because the process is performed at a low oxidation temperature. By preventing the precipitation of the oxidant with Cl and growing a homogeneous oxide film, defects due to precipitation and penetration of the oxidant and the metallic material can be prevented. In addition, by removing the metallic impurities between the conductive film formed before or after the oxide film formation, the contact surface characteristics between the oxide film and the conductive film can be improved.

Description

반도체 소자의 산화막 형성방법Oxide film formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 따른 산화막 형성시 공정조건표.2 is a process condition table for forming an oxide film according to the present invention.

Claims (3)

공정챔버에 웨이퍼를 장착하고 소정온도하에서 소정의 산화제를 첨가하여 산화공정을 진행하는 반도체 소자의 산화막 형성방법에 있어서, 상기 산화공정시 산화제로 O2에 DEC적정비율로 첨가하여, 650 내지 750℃의 온도하에서 산화공정을 진행하는 것을 특징으로 하는 반도체 소자의 산화막 형성방법.In mounting the wafer in the process chamber, and the oxide film formation method of a semiconductor device to proceed with the oxidation process by adding a predetermined oxidizing agent under certain temperature, is added to the DEC appropriate ratio to O 2 in the oxidation process when an oxidizing agent, 650 to 750 ℃ The oxide film forming method of a semiconductor device, characterized in that for performing an oxidation process at a temperature of. 제1항에 있어서, 상기 O2와 DEC의 혼합비는 3 내지 8/0.43 내지 0.72(SLPM)인 것을 특징으로 하는 반도체 소자의 산화막 형성방법.The method of claim 1, wherein the mixing ratio of O 2 and DEC is 3 to 8 / 0.43 to 0.72 (SLPM). 제1항에 있어서, 상기 웨이퍼 장착시 온도는 500 내지 600℃인 것을 특징으로 하는 반도체 소자의 산화막 형성방법.The method of claim 1, wherein the wafer is mounted at a temperature of 500 ° C. to 600 ° C. 3. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930030791A 1993-12-29 1993-12-29 Method for forming oxide layer of semiconductor device KR100296135B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930030791A KR100296135B1 (en) 1993-12-29 1993-12-29 Method for forming oxide layer of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930030791A KR100296135B1 (en) 1993-12-29 1993-12-29 Method for forming oxide layer of semiconductor device

Publications (2)

Publication Number Publication Date
KR950021210A true KR950021210A (en) 1995-07-26
KR100296135B1 KR100296135B1 (en) 2001-10-24

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Application Number Title Priority Date Filing Date
KR1019930030791A KR100296135B1 (en) 1993-12-29 1993-12-29 Method for forming oxide layer of semiconductor device

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100399907B1 (en) * 1996-12-28 2003-12-24 주식회사 하이닉스반도체 Method for forming oxide layer of semiconductor device
KR101565525B1 (en) 2014-02-20 2015-11-13 주식회사 마유텍 Thermal surface treatment method by dry process
CN108198909B (en) * 2018-01-15 2020-04-14 浙江晶科能源有限公司 Silicon wafer processing method and solar cell manufacturing method

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Publication number Publication date
KR100296135B1 (en) 2001-10-24

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