KR950020876A - Exposure method of E-beam - Google Patents

Exposure method of E-beam Download PDF

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Publication number
KR950020876A
KR950020876A KR1019930031841A KR930031841A KR950020876A KR 950020876 A KR950020876 A KR 950020876A KR 1019930031841 A KR1019930031841 A KR 1019930031841A KR 930031841 A KR930031841 A KR 930031841A KR 950020876 A KR950020876 A KR 950020876A
Authority
KR
South Korea
Prior art keywords
exposure
spot
data processing
photosensitive film
making
Prior art date
Application number
KR1019930031841A
Other languages
Korean (ko)
Other versions
KR0133830B1 (en
Inventor
함영목
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930031841A priority Critical patent/KR0133830B1/en
Publication of KR950020876A publication Critical patent/KR950020876A/en
Application granted granted Critical
Publication of KR0133830B1 publication Critical patent/KR0133830B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Abstract

본 발명은 이빔장치의 노광방법에 관한 것으로, 크롬막 위에 감광막을 도포하고 전자빔으로 노광한 후 현상하여 감광막 패턴을 만들어 크롬막을 식각하는 이빔장치에서 노광시 1차 데이타 처리영역을 만들어 스팟을 크게하여 노광을 실시하고, 2차로 데이타 처리영역을 만들어 스팟을 작게하여 노광을 실시함으로써 노광시간을 단축시키고 패턴의 질을 향상 시키는 방법에 관한 것이다.The present invention relates to an exposure method of an e-beam device, wherein a photosensitive film is coated on a chromium film, exposed with an electron beam, and then developed to form a photosensitive film pattern, thereby forming a primary data processing region during exposure in an e-beam device that etches a chromium film, thereby increasing the spot. The present invention relates to a method of shortening the exposure time and improving the quality of a pattern by performing exposure, and forming a data processing area in a secondary manner, and performing exposure by reducing a spot.

Description

이-빔(E-beam)의 노광방법Exposure method of E-beam

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 의한 이빔장치에서의 스팟을 도시한 단면도,2 is a cross-sectional view showing a spot in the e-beam apparatus according to the present invention;

제3도는 본 발명에 의한 이빔의 노광 순서도.3 is an exposure flowchart of an e-beam according to the present invention.

Claims (1)

크롬막 위에 감광막을 도포하고 전자빔으로 노광한 후 현상하여 감광막 패턴을 만들어 크롬막을 식각하는 이빔장치에 있어서, 전자빔에 의한 노광시 1차 데이타 처리영역을 만들어 스팟을 가능한 크게 하여 노광을 실시하고, 다시 2차 데이타 처리영역을 만들어 스팟을 가능한 작게하여 노광을 실시하는 이빔의 이단계 노광을 특징으로 하는 이빔의 노광방법.In an e-beam apparatus in which a photosensitive film is coated on a chromium film, exposed with an electron beam, and then developed to form a photosensitive film pattern to etch the chromium film, an exposure is made by forming a primary data processing region during exposure by an electron beam and making the spot as large as possible. An e-beam exposure method characterized by two-step exposure of an e-beam which performs exposure by making a secondary data processing area and making the spot as small as possible. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930031841A 1993-12-31 1993-12-31 Photo lithography by e-beam KR0133830B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930031841A KR0133830B1 (en) 1993-12-31 1993-12-31 Photo lithography by e-beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930031841A KR0133830B1 (en) 1993-12-31 1993-12-31 Photo lithography by e-beam

Publications (2)

Publication Number Publication Date
KR950020876A true KR950020876A (en) 1995-07-26
KR0133830B1 KR0133830B1 (en) 1998-04-23

Family

ID=19374774

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930031841A KR0133830B1 (en) 1993-12-31 1993-12-31 Photo lithography by e-beam

Country Status (1)

Country Link
KR (1) KR0133830B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100762228B1 (en) * 2001-12-27 2007-10-01 주식회사 하이닉스반도체 Method for writing image by multi-exposure to E-beam

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100762228B1 (en) * 2001-12-27 2007-10-01 주식회사 하이닉스반도체 Method for writing image by multi-exposure to E-beam

Also Published As

Publication number Publication date
KR0133830B1 (en) 1998-04-23

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