KR950015551A - Manufacturing method and apparatus for manufacturing semiconductor integrated circuit device - Google Patents

Abstract

TECHNICAL FIELD The present invention relates to a manufacturing technology of a semiconductor integrated circuit device, wherein when determining the film thickness, refractive index, and absorption coefficient of a thin film to be measured, the incident angle dependence characteristic of the reflectance required for measurement can be accurately obtained, and the parameters of the exposure and development processes are determined according to this characteristic value. In order to be able to control the photolithography equipment of resist coating, baking, exposure and development processes, a thin film characteristic value measuring unit, a light source, a collimating lens, a polarizing plate, an optical element for wavelength limitation, an illumination lens, and a detection side A lens, a reflected light intensity detector, a resist film or reference wafer, and a storage unit for storing reflected light intensity measurement results, a resist film reflectance or characteristic value calculating unit, and converging light from the illumination side lens is irradiated onto the resist film or reference wafer surface on the semiconductor wafer. The reflected light intensity corresponding to a wide range of incidence angles is simultaneously measured and the resist film Has a structure the incident angle dependence of the reflectivity is measured.

By using such an apparatus and method, variations in the film thickness, refractive index, and absorption coefficient of the characteristic value of the thin film on the sample can be accurately obtained, and greatly contribute to stabilization of dimensional accuracy and improvement of manufacturing efficiency of LIS.

Description

Manufacturing method and apparatus for manufacturing semiconductor integrated circuit device

Since this is an open matter, no full text was included.

1 is a block diagram showing a photolithographic installation in the apparatus for manufacturing a semiconductor integrated circuit device according to Embodiment 1 of the present invention.

FIG. 2 is a configuration diagram showing a thin film characteristic value measuring unit in the photolithographic equipment according to Example 1. FIG.

FIG. 3 is an explanatory diagram showing condensing on a back focal plane by a detection side lens in Example 1. FIG.

4 is an explanatory diagram showing multi-interference in a thin film in Example 1;

FIG. 5 is an explanatory diagram showing a method of exchanging a measurement target thin film and a reference sample in Example 1. FIG.

FIG. 6 is an explanatory diagram showing a procedure for measuring a change in reflectance according to a change in incident angle of a measurement target thin film in Example 1. FIG.

FIG. 7 is a configuration diagram showing a thin film characteristic value measuring section for executing a light quantity monitor of a light source in order to improve the characteristic value measuring accuracy of the thin film in Example 1. FIG.

FIG. 8 is a block diagram showing a thin film characteristic value measuring section for performing two or more detections of the reflected light intensity for improving the characteristic value measuring accuracy of the thin film in Example 1. FIG.

9 is an explanatory diagram showing multiple reflections on the lens surface in Example 1. FIG.

10 is an explanatory diagram showing another multi-reflection at the lens surface in Example 1. FIG.

FIG. 11 is an explanatory diagram showing a vertical illumination vertical detection method in which light is shielded near the optical axis in the embodiment; FIG.

FIG. 12 is an explanatory view showing a vertical illumination vertical detection method shielded for improving the S / N ratio in Example 1; FIG.

Claims (19)

A method for manufacturing a semiconductor integrated circuit device which transfers a pattern on a mask onto a thin film on a sample by using ultraviolet light emitted from a light source as exposed light, and is substantially the same as the exposed light without actually exposing and developing the thin film on the sample. A method for manufacturing a semiconductor integrated circuit device which irradiates light of a wavelength to the thin film, detects characteristics of the thin film from transmitted light or reflected light by the irradiation, and controls parameters of the exposure and development processes in accordance with the detection result. A method of manufacturing a semiconductor integrated circuit device in which a circuit pattern on a mask is transferred onto a photosensitive resist film on a semiconductor wafer by a reduction projection exposure method by using a reduction projection exposure apparatus using ultraviolet light as an exposure light, which actually exposes a resist film on the semiconductor wafer. And irradiating the resist film with light having a wavelength substantially the same as that of the exposed light without developing, detecting the characteristic value of the resist film from the transmitted light or the reflected light by the irradiation, and applying the resist coating according to the detection result, A method for manufacturing a semiconductor integrated circuit device for controlling each parameter of a baking exposure and developing process. The method according to claim 2, wherein the characteristic value of the resist film on said semiconductor wafer is made into the film thickness, refractive index, and absorption coefficient of said resist film, and the change of the characteristic value of said resist film is detected at a predetermined frequency. A manufacturing method of a semiconductor integrated circuit device in which the change of the detected characteristic value is reflected in the control of the process after the process or the process of the process being performed. 4. The method according to claim 3, wherein when the characteristic value of the resist film on the semiconductor wafer is detected, the semiconductor wafer is illuminated with convergent light and from the back focal plane intensity distribution of the lens for detecting divergent light reflected from the semiconductor wafer. The characteristic value of the resist film on the semiconductor wafer was measured, and the refractive index and absorption coefficient of the semiconductor wafer were measured using a theoretically calculated value of the postfocal plane intensity distribution of the known reference wafer and the incident angle dependency characteristic of the reflectance of the reference wafer. And converting the focal plane intensity distribution into the incident angle dependent characteristic of the reflectance, and then calculating the film thickness, refractive index, and absorption coefficient of the resist film on the semiconductor wafer. The method for manufacturing a semiconductor integrated circuit device according to claim 4, wherein the incident angle dependence characteristic of the reflectance of the semiconductor wafer is calculated using a post-focal plane intensity distribution detected by evacuating and detecting the semiconductor wafer. The method for manufacturing a semiconductor integrated circuit device according to claim 4, wherein the incident angle dependency characteristic of the reflectance of the semiconductor wafer is calculated using the intensity detection value of the convergent light. The method for manufacturing a semiconductor integrated circuit device according to claim 4, wherein the average value of two or more post focal plane measurement results is measured. 5. The method according to claim 4, wherein the incident angle dependent characteristic of the reflectance obtained by converting the rear focal plane intensity distribution of the semiconductor wafer is compared with the incident angle dependent characteristic of the reflectance calculated by substituting a combination of an arbitrary film thickness, refractive index and absorption coefficient. A method for manufacturing a semiconductor integrated circuit device for calculating a set of a film thickness, a refractive index, and an absorption coefficient when the two most match. The semiconductor integrated circuit according to claim 4, wherein the film thickness is obtained at a wavelength having a small absorption coefficient of the resist film on the semiconductor wafer, and the refractive index and absorption coefficient at a wavelength having a large absorption coefficient of the resist film are calculated using this film thickness value. Method of manufacturing the device. 5. The method according to claim 4, wherein two or more postfocal plane intensity distributions are detected and stored while the resist film on the semiconductor wafer is exposed, and the film thickness, refractive index, and absorption at each detection point are detected from the stored postfocal plane intensity distribution. A method for manufacturing a semiconductor integrated circuit device for calculating a coefficient to measure a change in a characteristic value of the resist film under exposure. The film thickness is calculated from the postfocal plane intensity distribution when the absorption coefficient of the resist film on the semiconductor wafer decreases, and the refractive index, from the postfocal plane intensity distribution at the time of each detection, A method for manufacturing a semiconductor integrated circuit device for calculating a coefficient of absorption and measuring a change in a characteristic value of the resist film during photosensitive exposure. A method of manufacturing a semiconductor integrated circuit device in which a circuit pattern on a mask is transferred onto a photosensitive resist film on a semiconductor wafer by a reduction projection exposure method by using a reduction projection exposure apparatus using ultraviolet light as an exposure light. In order to control each parameter of the process, the resist film is irradiated with light having a wavelength substantially the same as that of the exposed light without actually exposing and developing the resist film on the semiconductor wafer, and from the transmitted or reflected light by this irradiation, An apparatus for manufacturing a semiconductor integrated circuit device having a detecting means for detecting a characteristic value. 13. The apparatus according to claim 12, wherein the detection means for detecting a characteristic value of the resist film on the semiconductor wafer includes a light source, a lens for illuminating the semiconductor wafer with convergent light, a lens for detecting divergent light reflected from the bandote wafer, and A device for detecting the back focal plane intensity distribution of a lens, the incidence angle dependence characteristic of the reflectance of the reference wafer, the semiconductor wafer, and the semiconductor wafer whose refraction and absorption coefficient are known, and the incident angle dependence characteristic of the reflectance of the semiconductor wafer And an associating device for calculating the film thickness, refractive index and absorption coefficient of the resist film from the semiconductor integrated circuit device manufacturing apparatus. The apparatus for manufacturing a semiconductor integrated circuit device according to claim 13, wherein the semiconductor wafer and the reference wafer are simultaneously mounted on a mounting table. The lens according to claim 13, wherein the lens for illuminating the semiconductor wafer with convergent light is used in combination with a lens that detects divergent light reflected from the semiconductor wafer whose optical axis is perpendicular to the semiconductor wafer. The apparatus for manufacturing a semiconductor integrated circuit device which does not pass illumination light other than the converging light in the vicinity of the optical axis. 14. The lens of claim 13, wherein the lens for illuminating the semiconductor wafer with convergent light is used in combination with a lens that detects divergent light reflected from the semiconductor wafer whose optical axis is perpendicular to the semiconductor wafer. A device for manufacturing a semiconductor integrated circuit device in which a lens transmission position of illumination by the converging light and reflection light by the field scattered light is different without passing illumination light in the vicinity. 14. The apparatus of claim 13, further comprising: an apparatus for extracting different wavelength light from said light source, an apparatus for storing a detection value of a back focal plane intensity distribution at each wavelength, and a back focal plane intensity at a wavelength with a small absorption coefficient of a resist film on said semiconductor wafer An apparatus for manufacturing a semiconductor integrated circuit device having a computing device for calculating a film thickness from the distribution and calculating a refractive index and an absorption coefficient from the film thickness value and the postfocal plane intensity distribution at each other wavelength. The apparatus according to claim 13, wherein the device for continuously detecting and storing the detected values of the postfocal plane intensity distribution, and calculating the film thickness, refractive index, and absorption coefficient at each detection point from the stored postfocal plane intensity distribution. An apparatus for manufacturing a semiconductor integrated circuit device having a device. 14. The film thickness of claim 13, wherein the film thickness is obtained from an apparatus for continuously detecting and storing the detected value of the post focal plane intensity distribution, and the postfocal plane intensity distribution when the absorption coefficient of the resist film on the semiconductor wafer is reduced. An apparatus for manufacturing a semiconductor integrated circuit device having a computing device for calculating a refractive index and an absorption coefficient from a film thickness value and a post focal plane intensity distribution at the time of angle detection. ※ Note: The disclosure is based on the initial application.