KR950012685A

KR950012685A - Device Separation Method of Semiconductor Device

Info

Publication number: KR950012685A
Application number: KR1019930022684A
Authority: KR
Inventors: 김승준
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1993-10-29
Filing date: 1993-10-29
Publication date: 1995-05-16

Abstract

본 발명은 반도체소자의 소자분리막(field oxide layer) 제조방법에 관한 것으로, 실리콘기판 상부에 산화막, 다결정실리콘, 질화막을 증착하는 피비엘(PBL poly buffered LOCOS)구조의 상부에 감광막패턴을 형성한 후, 패턴을 마스크로 하여 상부로 부터 다결정실리콘까지 제거하고, 산화막 및 실리콘기판에 패턴의 크기보다 적은 폭의 얇은 트렌치 (trench)를 형성하고, 실리콘기판을 산화시켜 제거하고, 완충작용용 산화막을 형성하고. 다결정실리콘을 증착하고, 필드산화막을 형성한 다음, 평면에치백(etch back)하여 상부를 평탄화시킴으로써, 체적비를 크게하고 후속공정을 용이하게 하여 신뢰성을 확보하는 기술에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for fabricating a field oxide layer of a semiconductor device, wherein a photoresist pattern is formed on a PBL poly buffered LOCOS structure in which an oxide film, a polysilicon layer, and a nitride film are deposited on a silicon substrate. Using a pattern as a mask, the polysilicon is removed from the top, and a thin trench having a width smaller than the size of the pattern is formed on the oxide film and the silicon substrate, and the silicon substrate is oxidized and removed to form a buffer oxide film. and. By depositing polysilicon, forming a field oxide film, and then etching back the plane to planarize the upper portion, the present invention relates to a technique for increasing the volume ratio and facilitating subsequent processes to secure reliability.

Description

Device Separation Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도 내지 제10도는 본 발명의 실시예에 의해 반도체소자의 소자분리막 제조공정을 도시한 단면도.1 to 10 are cross-sectional views showing a device isolation film manufacturing process of a semiconductor device according to an embodiment of the present invention.

Claims

A method of manufacturing a device isolation film for a semiconductor device, comprising: laminating an oxide film, a first polycrystalline silicon film, a nitride film, and a photosensitive film on top of a silicon substrate, and forming a field oxide film using a photoresist pattern, and using the photoresist pattern as a mask Forming a trench by etching the lower silicon substrate from the nitride film, oxidizing and removing the damaged layer on the surface of the trench, and depositing a thin oxide film that buffers the removed portion. Depositing a second polycrystalline silicon film on the entire upper structure, and subjecting the second polycrystalline silicon film to field oxidation; Depositing a BPSG on top of the field oxide film, etching the upper surface of the BPSG film and the field oxide film until the nitride film is exposed, exposing the exposed nitride film to the BPSG film and the field oxide film, and exposing the second polycrystalline silicon film. A method of manufacturing a device isolation film for a semiconductor device comprising the step of making a back to the plane until the surface, and removing the first polycrystalline silicon film.

2. The SOG and TEOS of claim 1, wherein the flow is good instead of the BPSG. A device isolation film manufacturing method for a semiconductor device, comprising using a photosensitive film.

The method of claim 1, wherein the etch rate of the well-flowing material and the field oxide layer is about 1: 1 in the plane.

※ Note: The disclosure is based on the initial application.