KR950010198A - Manufacturing method of semiconductor laser device - Google Patents

Manufacturing method of semiconductor laser device Download PDF

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Publication number
KR950010198A
KR950010198A KR1019930019769A KR930019769A KR950010198A KR 950010198 A KR950010198 A KR 950010198A KR 1019930019769 A KR1019930019769 A KR 1019930019769A KR 930019769 A KR930019769 A KR 930019769A KR 950010198 A KR950010198 A KR 950010198A
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KR
South Korea
Prior art keywords
layer
buffer layer
algaas
forming
gaas
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KR1019930019769A
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Korean (ko)
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KR100259006B1 (en
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김종렬
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김광호
삼성전자 주식회사
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Publication of KR950010198A publication Critical patent/KR950010198A/en
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Publication of KR100259006B1 publication Critical patent/KR100259006B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/02—MBE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

계면특성이 우수한 소자를 용이하게 제작할 수 있는 반도체 레이저 소자의 제조방법이 개시된다.Disclosed is a method for manufacturing a semiconductor laser device capable of easily manufacturing a device having excellent interfacial properties.

n형 GaAs기판상에 GaAs 버퍼층, AlGaAs 하부 클래드층, AlGaAs 활성층, AlGaAs 상부 클래드층, p형 GaAs 버퍼층, 및 n형 GaAs 전류차단층을 순차적으로 형성하는 단계; 전류차단층의 중앙 일부를 식각마스크를 이용하여 개구부를 형성하는 단계; 개구부 아래의 노출된 버퍼층을 제거하여 상부 클래드층을 노출시키는 단계; 노출된 상부 클래드층을 재성장시키는 단계; 식각마스크를 제거하는 단계; 및 결과물 전면에 p형 GaAs 콘택트층을 형성하는 단계를 구비한다. 릿지부의 높이 조절이 양호하게 되며, 릿지 상부면의 계면특성이 크게 향상된다.sequentially forming a GaAs buffer layer, an AlGaAs lower clad layer, an AlGaAs active layer, an AlGaAs upper clad layer, a p-type GaAs buffer layer, and an n-type GaAs current blocking layer on the n-type GaAs substrate; Forming an opening in a central portion of the current blocking layer by using an etching mask; Removing the exposed buffer layer below the opening to expose the top clad layer; Regrown the exposed upper clad layer; Removing the etching mask; And forming a p-type GaAs contact layer on the entire surface of the resultant. The height control of the ridge portion is improved, and the interface characteristics of the ridge upper surface are greatly improved.

Description

반도체 레이저 소자의 제조방법Manufacturing method of semiconductor laser device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도 내지 제6도는 본 발명에 의한 반도체 레이저 다이오드의 제조 방법의 일례를 나타내는 각 공정별 단면도.2-6 is sectional drawing for each process which shows an example of the manufacturing method of the semiconductor laser diode by this invention.

Claims (5)

제1도전형의 GaAs기판상에 제1도전형의 GaAs 버퍼층, AlGaAs 하부 클래드층, AlGaAs 활성층, AlGaAs 상부 클래드층, 제2도전형의 GaAs 버퍼층, 및 제1도전형의 GaAs 전류차단층을 순차적으로 형성하는 단계; 상기 전류차단층의 중앙 일부를 식각마스크를 이용하여 식각하여 전류가 흐를 수 있는 통로를 위한 개구부를 형성하는 단계; 상기 개구부 아래의 노출된 제2도전형의 버퍼층을 제거하여 상기 상부 클래드층을 노출시키는 단계; 상기 노출된 상기 클래드층을 소정의 높이가 되도록 재성장시키는 단계; 상기 식각마스크를 제거하는 단계; 및 상기 결과물 전면에 제2도전형 GaAs 콘택트층을 형성하는 단계를 구비하여 이루어지는 것을 특징으로 하는 반도체 레이저 소자의 제조방법.The GaAs buffer layer of the first conductivity type, the AlGaAs lower cladding layer, the AlGaAs active layer, the AlGaAs upper cladding layer, the GaAs buffer layer of the second conductivity type, and the GaAs current blocking layer of the first conductivity type are sequentially formed on the GaAs substrate of the first conductivity type. Forming to; Forming an opening for a passage through which a current flows by etching a central portion of the current blocking layer using an etching mask; Removing the exposed second conductive buffer layer below the opening to expose the upper clad layer; Regrowing the exposed clad layer to a predetermined height; Removing the etching mask; And forming a second conductive GaAs contact layer on the entire surface of the resultant. 제1항에 있어서, 상기 식각마스크는 산화실리콘을 사용하여 형성하는 것을 특징으로 하는 반도체 레이저 소자의 제조방법.The method of claim 1, wherein the etching mask is formed using silicon oxide. 제1항에 있어서, 상기 제2도전형 버퍼층을 제거하는 단계는 유기금속 기상성장 공정의 염산 가스를 사용하여 선택적 기상 식각방법에 의해 수행하는 것을 특징으로 하는 반도체 레이저 소자의 제조방법.The method of claim 1, wherein the removing of the second conductive buffer layer is performed by a selective vapor phase etching method using hydrochloric acid gas of an organometallic vapor phase growth process. 제1항에 있어서, 상기 제2도전형 버퍼층을 제거하는 단계는 분자선 에피택시법의 As4플럭스를 사용한 선택적 열 식각 방법에 의해 수행하는 것을 특징으로 하는 반도체 레이저 소자의 제조방법.The method of claim 1, wherein the removing of the second conductive buffer layer is performed by a selective thermal etching method using As 4 flux of molecular beam epitaxy. 제1항에 있어서, 상기 활성층은 조성비가 Al0.14Ga0.86As 이고, 상기 상, 하부 클래드층의 조성비가 Al0.45Ga0.55As인 것을 특징으로 하는 반도체 레이저 소자의 제조방법.The method of claim 1, wherein the active layer has a composition ratio of Al 0.14 Ga 0.86 As and the composition ratio of the upper and lower clad layers is Al 0.45 Ga 0.55 As. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930019769A 1993-09-25 1993-09-25 Manufacturing method of semiconductor laser device KR100259006B1 (en)

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Application Number Priority Date Filing Date Title
KR1019930019769A KR100259006B1 (en) 1993-09-25 1993-09-25 Manufacturing method of semiconductor laser device

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Application Number Priority Date Filing Date Title
KR1019930019769A KR100259006B1 (en) 1993-09-25 1993-09-25 Manufacturing method of semiconductor laser device

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KR950010198A true KR950010198A (en) 1995-04-26
KR100259006B1 KR100259006B1 (en) 2000-06-15

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