KR930015225A - Manufacturing method of laser diode - Google Patents

Manufacturing method of laser diode Download PDF

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Publication number
KR930015225A
KR930015225A KR1019910024137A KR910024137A KR930015225A KR 930015225 A KR930015225 A KR 930015225A KR 1019910024137 A KR1019910024137 A KR 1019910024137A KR 910024137 A KR910024137 A KR 910024137A KR 930015225 A KR930015225 A KR 930015225A
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South Korea
Prior art keywords
layer
etching
current blocking
melt
manufacturing
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KR1019910024137A
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Korean (ko)
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KR950000962B1 (en
Inventor
이성재
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김광호
삼성전자 주식회사
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Priority to KR1019910024137A priority Critical patent/KR950000962B1/en
Priority to JP4344230A priority patent/JPH05267781A/en
Priority to US07/995,750 priority patent/US5362675A/en
Publication of KR930015225A publication Critical patent/KR930015225A/en
Application granted granted Critical
Publication of KR950000962B1 publication Critical patent/KR950000962B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

역메사를 가지는 반도체 기판상에 LPE방법으로 전류 차단층을 형성하면 성장특성에 의해 상기 메사의 표면에는 거의 성장되지 않으므로 불포화 상태인 용융된 시료를 용융에칭할때 AlGaAs보아 GaAs가 빠르게 에칭되는 것을 이용하여 채널을 형성하고, 계속해서 제1클래드층을 비롯한 에피택셜층들을 순차적으로 형성한다. 상기에서 전류차단층들과 제1클래드층의 Al의 몰농도를 조절하여 동작모드를 제어할 수 있다. 따라서, 반도체 기판의 역메사 표면에 전류 차단층이 얇게 형성되므로 용융에칭에 의해 채널을 쉽게 형성할 수 있고, 용융에칭을 하기 위한 용융된 시료의 불포화 상태를 온도구배에 의해 쉽고 정확하게 조절할 수 있으므로 용융에칭의 신뢰성을 향상시킬 수 있다. 또한, 전류 차단층의 Al 몰농도를 임의로 조절하여 원하는 동작모드를 갖도록 할 수 있다.When the current blocking layer is formed on the semiconductor substrate having an inverted mesa by the LPE method, since the growth characteristic hardly grows on the surface of the mesa, GaAs is etched faster than AlGaAs when melt-etching an unsaturated molten sample. To form a channel, and subsequently form epitaxial layers including the first cladding layer. The operating mode may be controlled by adjusting the molar concentrations of Al in the current blocking layers and the first cladding layer. Therefore, since the current blocking layer is thinly formed on the reverse mesa surface of the semiconductor substrate, the channel can be easily formed by melt etching, and the unsaturation state of the molten sample for melt etching can be easily and accurately controlled by the temperature gradient. The reliability of the etching can be improved. In addition, the Al molar concentration of the current blocking layer may be arbitrarily adjusted to have a desired operation mode.

Description

레이저 다이오드 제조방법Laser diode manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2(A)~(D)도는 이 발명에 따른 레이저 다이오드의 제조공정도,2 (A) to (D) is a manufacturing process diagram of a laser diode according to the present invention,

제3도는 이 발명에 따른 레이저 디이오드의 제조공정에서 에피택셜층들 성장시에 온도 구배를 나타내는 그래프,3 is a graph showing a temperature gradient upon growth of epitaxial layers in the manufacturing process of a laser diode according to the present invention;

제4(A)~(D)도는 이 발명에 따른 레이저 다이오드의 제조에 이용되는 LPE장치의 작동순서도이다.4 (A) to (D) are operation flowcharts of the LPE apparatus used for manufacturing the laser diode according to the present invention.

Claims (9)

레이저다이오드의 제조방법에 있어서, 역 메사를 가지는 제1도전형의 반도체기판 표면에 제2도전형의 전류차단층을 형성하는 제1공정과, 상기 역메사 상부에 형성된 전류차단층과 이 역메사를 용융에칭하여 채널을 형성하는 제2공정과, 상기 남아있는 전류 차단층들의 상부에 상기 채널을 메꾸도록 제1도전형의 제1클래드층을 형성하고 이 제1클래드층의 상부에 활성층, 제2도전형의 제2클래드층 및 제2도전형의 캡층을 순차적으로 적층하는 제3공정과, 상기 반도체 기판의 하부표면과 캡층의 상부에 제1 및 제2도전형의 전극들을 형성하는 제4공정을 이루어지는 레이저 다이오드의 제조방법.1. A method of manufacturing a laser diode, the method comprising: forming a current blocking layer of a second conductive type on a surface of a semiconductor substrate of a first conductive type having a reverse mesa; a current blocking layer formed on an upper portion of the reverse mesa; Forming a channel by melt-etching and forming a first cladding layer of a first conductivity type to fill the channel on top of the remaining current blocking layers, and forming an active layer and a top layer of the first cladding layer. A third step of sequentially stacking the second cladding layer of the second conductivity type and the cap layer of the second conductivity type; and a fourth step of forming electrodes of the first and second conductivity types on the lower surface of the semiconductor substrate and on the cap layer. The manufacturing method of the laser diode which processes. 제1항에 있어서, 상기 제1공정에서 제3공정까지는 일단계의 액상에피택시 공정으로 형성하는 레이저 다이오드의 제조방법.The method of claim 1, wherein the first to third processes are formed by a liquid phase epitaxy process in one step. 제1항에 있어서, 상기 반도체 기판이 GaAs인 레이저 다이오드의 제조방법.The method of claim 1, wherein the semiconductor substrate is GaAs. 제1항에 있어서, 상기 전류제한층을 AlxGa1-xAs로, 클래드층을 AlyGa1-yAs로 형성하는 레이저 다이오드의 제조방법.The method of claim 1, wherein the current limiting layer is formed of Al x Ga 1- x As and the cladding layer is formed of AlyGa 1- y As. 제4항에 있어서, 상기 전류제한층 및 클래드층의 Al몰농도의 조절에 의해 동작모드를 제어할 수 있는 레이저다이오드의 제조방법.The method of manufacturing a laser diode according to claim 4, wherein an operation mode can be controlled by adjusting an Al molar concentration of the current limiting layer and the cladding layer. 제5항에 있어서, 상기 x가 y보다 크도록 형성하는 레이저 다이오드의 제조방법.The method of manufacturing a laser diode according to claim 5, wherein x is formed to be larger than y. 제5항에 있어서, 상기 x가 y가 같도록 형성하는 레이저 다이오드의 제조방법.The method of claim 5, wherein x is formed such that y is the same. 제5항에 있어서, 상기 x가 y가 작도록 형성하는 레이저 다이오드의 제조방법.The method of claim 5, wherein x is formed such that y is small. 제1항에 있어서, 상기 용융에칭은 용융에칭에 이용되는 용융된 시료를 균질화할때 보다 높은 온도에 하는 레이저 다이오드의 제조방법.The method of claim 1, wherein the melt etching is performed at a higher temperature when the molten sample used for the melt etching is homogenized. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910024137A 1991-12-24 1991-12-24 Manufacturing method of laser diode KR950000962B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019910024137A KR950000962B1 (en) 1991-12-24 1991-12-24 Manufacturing method of laser diode
JP4344230A JPH05267781A (en) 1991-12-24 1992-12-24 Laser diode and method of manufacturing laser diode array
US07/995,750 US5362675A (en) 1991-12-24 1992-12-24 Manufacturing method of laser diode and laser diode array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910024137A KR950000962B1 (en) 1991-12-24 1991-12-24 Manufacturing method of laser diode

Publications (2)

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KR930015225A true KR930015225A (en) 1993-07-24
KR950000962B1 KR950000962B1 (en) 1995-02-06

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KR1019910024137A KR950000962B1 (en) 1991-12-24 1991-12-24 Manufacturing method of laser diode

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100357787B1 (en) * 1994-01-31 2003-01-24 가부시끼가이샤 히다치 세이사꾸쇼 Manufacturing method of waveguide fluorescent element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100357787B1 (en) * 1994-01-31 2003-01-24 가부시끼가이샤 히다치 세이사꾸쇼 Manufacturing method of waveguide fluorescent element

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KR950000962B1 (en) 1995-02-06

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