KR950009908A - Sputtering Deposition Method - Google Patents

Sputtering Deposition Method Download PDF

Info

Publication number
KR950009908A
KR950009908A KR1019930019529A KR930019529A KR950009908A KR 950009908 A KR950009908 A KR 950009908A KR 1019930019529 A KR1019930019529 A KR 1019930019529A KR 930019529 A KR930019529 A KR 930019529A KR 950009908 A KR950009908 A KR 950009908A
Authority
KR
South Korea
Prior art keywords
source target
plasma
composite
sputtering
deposition method
Prior art date
Application number
KR1019930019529A
Other languages
Korean (ko)
Inventor
안희복
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930019529A priority Critical patent/KR950009908A/en
Publication of KR950009908A publication Critical patent/KR950009908A/en

Links

Landscapes

  • Physical Vapour Deposition (AREA)

Abstract

본 발명은 증착하고자 하는 물질을 소오스 타겟트(1) 및 상기 소오스 타겟트(1) 주위에 형성된 플라즈마(3)의 합성물로 형성하는 스퍼터링 증착 방법에 있어서, 상기 스퍼터링으로 임의의 웨이퍼상에 소오스 타겟트(1)와 플라즈마(3)의 합성물을 증착하는 단계와, 상기 합성물을 또 다른 임의의 웨이퍼상에 증착하기전에 상기 소오스타켓트(1)표면의 합성물(4)을 소정가스의 플라즈마로 스퍼터링하여 제거하는 단계를 포함하여 이루어지는 것을 특징으로 하는 스퍼터링 증착 방법에 관한 것으로, 소오스 타겟트 표면을 세정하여 주므로써 각각의 웨이퍼에 대한 증착낙의 토포러지와 균일도 및 증착율을 향상시켜 소자의 특성 및 수율을 향상시키는 효과가 있다.The present invention provides a sputtering deposition method in which a material to be deposited is formed of a composite of a source target 1 and a plasma 3 formed around the source target 1, wherein the sputtering causes a source target on an arbitrary wafer. Depositing a composite of the substrate 1 and the plasma 3 and sputtering the composite 4 on the surface of the source target 1 with a plasma of a predetermined gas before depositing the composite on another arbitrary wafer. A sputtering deposition method comprising a step of removing the same, and cleaning the source target surface to improve the topography and uniformity and deposition rate of the deposition drop for each wafer to improve the characteristics and yield of the device Has the effect of improving.

Description

스퍼터링 증착 방법Sputtering Deposition Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 일실시예의 따라 티타늄타겟트 표면의 티타늄 잘화막이 제거도는 상태를 나타내는 단면도.2 is a cross-sectional view showing a state in which the titanium fine film is removed in the titanium target surface according to an embodiment of the present invention.

Claims (1)

증착하고자 하는 물질을 소오스 타겟트(1) 및 상기 소오스 타겟트(1)주위에 형성된 플라즈마(3)의 합성물로 생성하는 스퍼터링 증착 방법에 있어서, 상기 스퍼터링으로 임의의 웨이퍼상에 소오스 타겟트(1)와 플라즈마(3)의 합성물을 중착하는 단계와, 상기 합성물을 또다른 임의의 웨이퍼상에 증착하기 전에 상기 소오스 타겟트(10표면과 플라즈마(3)의 반응도로 형성된 소오스 타겟트(1) 표면의 합성물(4)을 소정가스의 플라즈마로 스퍼터링하여 제거하는 단계를 포함하는 이루어지는 것을 특징으로 하는 스퍼터링 증착 방법.In the sputtering deposition method of generating a material to be deposited into a composite of a source target (1) and a plasma (3) formed around the source target (1), the source target (1) on any wafer by the sputtering ) And a source target (1) formed by reacting the source target (10 surface with the plasma 3) prior to depositing the composite of the plasma and the plasma 3 and depositing the composite on another arbitrary wafer. Sputtering deposition method comprising the step of sputtering and removing the compound (4) of the surface with a plasma of a predetermined gas. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930019529A 1993-09-23 1993-09-23 Sputtering Deposition Method KR950009908A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930019529A KR950009908A (en) 1993-09-23 1993-09-23 Sputtering Deposition Method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930019529A KR950009908A (en) 1993-09-23 1993-09-23 Sputtering Deposition Method

Publications (1)

Publication Number Publication Date
KR950009908A true KR950009908A (en) 1995-04-26

Family

ID=66824000

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930019529A KR950009908A (en) 1993-09-23 1993-09-23 Sputtering Deposition Method

Country Status (1)

Country Link
KR (1) KR950009908A (en)

Similar Documents

Publication Publication Date Title
KR930005110A (en) Improved method of depositing materials in integrated circuit fabrication
WO2002043124A3 (en) Method for making a substrate in particular for optics, electronics or optoelectronics and resulting substrate
KR950000931A (en) How to restrict objects from sticking to receivers during deposition
DE69736969D1 (en) Method of treating the surface of semiconductive substrates
ES2043826T3 (en) METHOD FOR DEPOSITION OF INCREASED SILICON OXIDE IN PLASMA.
KR960026267A (en) Formation method of high melting point metal thin film
ES2098728T3 (en) PROCEDURE FOR COATING A SUBSTRATE WITH A MATERIAL WHICH CAUSES A BRIGHTNESS EFFECT.
DK1198609T3 (en) Process for manufacturing a cemented carbide component
AU2003290815A1 (en) Atomic layer deposition methods
KR970030381A (en) Improved method for forming aluminum contacts
DE69610365D1 (en) Adhesive layer for the deposition of tungsten
EP0401035A3 (en) Film forming apparatus and film forming method
TW430882B (en) Plasma film forming method
KR960019584A (en) Improved titanium nitride layer deposited by chemical vapor deposition and method of manufacturing the same
TW200514145A (en) Method and apparatus for depositing materials with tunable optical properties and etching characteristics
FR2708626A1 (en) Ultra-thin transparent and conductive film and process for its production.
ES2071055T3 (en) FINE LAYER DEPOSIT PROCEDURE.
BR0208601A (en) Method and device for depositing a layer of at least partially crystalline silicon on a substrate
KR950009908A (en) Sputtering Deposition Method
BR0003014A (en) Method for depositing film of piezoelectric material
KR960030315A (en) Wet-phase epitaxial growth method
MY142434A (en) Component in film forming equipment and method of cleaning the same
WO2003073480A3 (en) Emission layer formed by rapid thermal formation process
KR960039126A (en) Semiconductor device manufacturing method and apparatus
JPS55124244A (en) Method of fabricating chip component

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination