KR950007601A - Close Image Sensor - Google Patents
Close Image Sensor Download PDFInfo
- Publication number
- KR950007601A KR950007601A KR1019930017302A KR930017302A KR950007601A KR 950007601 A KR950007601 A KR 950007601A KR 1019930017302 A KR1019930017302 A KR 1019930017302A KR 930017302 A KR930017302 A KR 930017302A KR 950007601 A KR950007601 A KR 950007601A
- Authority
- KR
- South Korea
- Prior art keywords
- photoelectric conversion
- thin film
- conversion layer
- film transistor
- film transistors
- Prior art date
Links
Abstract
본 발명은 밀착형 이미지 센서에 관한 것으로, 플레너 구조의 전극으로 구성된 m개의 광전변환소자를 한 단위로 한 n개의 블록으로 이루어진 제 1광전 변환층(11)과, 상기 제 1광전변환층(11)과 동일하게 구성된 제 2광전변환층(21)과, m개의 박막트랜지스터를 한 단위로 하여 n개의 블록으로 상기 제 1 및 제 2광전변환층(11, 21)을 차례로 스위칭하는 1열의 박막트랜지스터부(30)와 상기 제 1 및 제 2광전변환층(11, 21)에 광전변환소자 구동펄스를 인가하는 광전변환소자 구동회로(60)와 상기 박막트랜지스터 m개를 한 단위로 한 n개의 게이트 어드레스 라인(38)에 게이트 구동펄스를 인가하는 게이트 구동회로(70)와, 상기 제 1 및 제 2광전변환층(11, 21)에서 축적된 캐리어를 상기 박막트랜지스터와 데이터 독출라인(41)을 통해 순차적으로 처리하는 데이터 독출부(80)를 구비하여 제 1열의 아날로그 스위치인 박막 트랜지스터로 2열의 광전변환소자열을 구동함으로써 스캔 속도를 향상시키고 독출회로를 1개만 사용함으로써 제조비용을 절감시키는 효과가 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a close-type image sensor, comprising: a first photoelectric conversion layer (11) composed of n blocks including m photoelectric conversion elements composed of a planar structure electrode, and the first photoelectric conversion layer (11) ) And a single thin film transistor for sequentially switching the first and second photoelectric conversion layers 11 and 21 with n blocks by using m thin film transistors as a unit and m thin film transistors as a unit. A photoelectric conversion element driving circuit 60 for applying photoelectric conversion element driving pulses to the section 30, the first and second photoelectric conversion layers 11 and 21, and n gates each of m thin film transistors. A gate driving circuit 70 applying a gate driving pulse to an address line 38 and carriers accumulated in the first and second photoelectric conversion layers 11 and 21 may be formed using the thin film transistor and the data read line 41. Through the data reader 80 to process sequentially through In addition, by driving two rows of photoelectric conversion element columns with a thin film transistor which is an analog switch of the first row, it is possible to improve the scanning speed and to reduce the manufacturing cost by using only one read circuit.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제 5도는 본 발명에 의한 밀착형 이미지 센서의 레이아웃도,5 is a layout diagram of a close-type image sensor according to the present invention,
제 6도는 BB'선을 기준으로 자른 제 5도의 단면도,6 is a cross-sectional view of FIG. 5 taken along line BB ',
제 7도는 제 5도의 등가회로도,7 is an equivalent circuit diagram of FIG.
제 8도는 제 7도의 파형도.8 is a waveform diagram of FIG.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930017302A KR950007601A (en) | 1993-08-31 | 1993-08-31 | Close Image Sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930017302A KR950007601A (en) | 1993-08-31 | 1993-08-31 | Close Image Sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
KR950007601A true KR950007601A (en) | 1995-03-21 |
Family
ID=66817885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930017302A KR950007601A (en) | 1993-08-31 | 1993-08-31 | Close Image Sensor |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR950007601A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100965176B1 (en) * | 2003-04-07 | 2010-06-24 | 삼성전자주식회사 | Array panel for digital x-ray detector and method for manufacturing the same |
-
1993
- 1993-08-31 KR KR1019930017302A patent/KR950007601A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100965176B1 (en) * | 2003-04-07 | 2010-06-24 | 삼성전자주식회사 | Array panel for digital x-ray detector and method for manufacturing the same |
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Legal Events
Date | Code | Title | Description |
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WITN | Withdrawal due to no request for examination |